SiJ438DP Datasheet

SiJ438DP
www.vishay.com
Vishay Siliconix
N-Channel 40 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
40
RDS(on) () Max.
ID (A) a, g
0.00135 at VGS = 10 V
80
0.00175 at VGS = 4.5 V
80
Qg (Typ.)
58 nC
• TrenchFET® Gen IV power MOSFET
• Tuned for the lowest RDS-Qoss FOM
• 100 % Rg and UIS tested
• Qgd / Qgs ratio < 1 optimizes switching
characteristics
PowerPAK® SO-8L Single
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
D
APPLICATIONS
6.
15
m
m
m
1
13
m
4
G
5.
Top View
3
S
2
S
1
S
D
• Synchronous rectification
• ORing
• High power density DC/DC
G
• VRMs and embedded DC/DC
Bottom View
• DC/AC inverters
Ordering Information: 
SiJ438DP-T1-GE3 (lead (Pb)-free and halogen-free)
N-Channel MOSFET
• Load switch
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
40
Gate-Source Voltage
VGS
+20, -16
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
80 g
TC = 70 °C
80 g
TA = 25 °C
ID
Continuous Source-Drain Diode Current
36.2 b, c
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
IDM
TC = 25 °C
TA = 25 °C
L = 0.1 mH
TC = 70 °C
TA = 25 °C
63
IS
4.5 b, c
IAS
50
EAS
125
mJ
69.4
44.4
PD
W
5 b, c
3.2 b, c
TA = 70 °C
Operating Junction and Storage Temperature Range
A
200
TC = 25 °C
Maximum Power Dissipation
V
45.3 b, c
TA = 70 °C
Pulsed Drain Current (t = 100 μs)
Unit
TJ, Tstg
-55 to +150
Soldering Recommendations (Peak Temperature) d, e
°C
260
THERMAL RESISTANCE RATINGS
Parameter
Maximum
Junction-to-Ambient b, f
Maximum Junction-to-Case (Drain)
Symbol
Typical
Maximum
t  10 s
RthJA
20
25
Steady State
RthJC
1.3
1.8
Unit
°C/W
Notes
a. TC = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8L is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 65 °C/W.
g. Package limited.
S16-0750-Rev. A, 25-Apr-16
Document Number: 69684
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiJ438DP
www.vishay.com
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
VDS
VGS = 0 V, ID = 250 μA
40
-
-
-
V
22
-
-
-5.6
-
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VDS/TJ
VGS(th) Temperature Coefficient
VGS(th)/TJ
Gate-Source Threshold Voltage
ID = 250 μA
mV/°C
VGS(th)
VDS = VGS, ID = 250 μA
1.1
-
2.4
V
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = +20 V, -16 V
-
-
± 100
nA
Zero Gate Voltage Drain Current
IDSS
On-State Drain Current a
ID(on)
Drain-Source On-State Resistance a
Forward Transconductance a
RDS(on)
gfs
VDS = 40 V, VGS = 0 V
-
-
1
VDS = 40 V, VGS = 0 V, TJ = 55 °C
-
-
10
VDS  5 V, VGS = 10 V
30
-
-
VGS = 10 V, ID = 20 A
-
0.00110 0.00135
VGS = 4.5 V, ID = 10 A
-
0.00145 0.00175
VDS = 10 V, ID = 20 A
-
9400
-
VDS = 20 V, VGS = 0 V, f = 1 MHz
-
1340
-
-
215
-
-
121
182
-
58
87
-
22.6
-
-
13.5
-
149
-
μA
A

S
Dynamic b
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Output Charge
Qoss
VDS = 20 V, VGS = 0 V
-
62.5
94
Rg
f = 1 MHz
0.4
1.1
2.0
-
16
32
-
19
38
-
54
108
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
VDS = 20 V,VGS = 10 V, ID = 10 A
VDS = 20 V,VGS = 4.5 V, ID = 10 A
td(on)
tr
td(off)
VDD = 20 V, RL = 2 
ID  10 A, VGEN = 10 V, Rg = 1 
tf
-
9
18
td(on)
-
55
110
-
98
196
-
47
94
-
17
34
tr
td(off)
VDD = 20 V, RL = 2 
ID  10 A, VGEN = 4.5 V, Rg = 1 
tf
pF
nC

ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulse Diode Forward Current (t = 100 μs)
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
TC = 25 °C
IS = 5 A
IF = 10 A, dI/dt = 100 A/μs, TJ = 25 °C
-
-
63
-
-
200
-
0.7
1.1
V
-
60
120
ns
-
95
190
nC
-
33
-
-
27
-
A
ns
Notes
a. Pulse test; pulse width  300 μs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.




Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S16-0750-Rev. A, 25-Apr-16
Document Number: 69684
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiJ438DP
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
Axis Title
200
200
10000
10000
VGS = 10 V thru 4 V
80
100
VGS = 3 V
40
1000
120
1st line
2nd line
1000
120
2nd line
ID - Drain Current (A)
160
1st line
2nd line
2nd line
ID - Drain Current (A)
160
TC = 25 °C
80
100
40
TC = -55 °C
TC = 125 °C
VGS = 2 V
0
0
10
0.5
1
1.5
2
2.5
10
0
1
2
VGS - Gate-to-Source Voltage (V)
2nd line
Output Characteristics
Transfer Characteristics
Axis Title
10000
12000
Ciss
1000
1st line
2nd line
0.0012
100
VGS = 10 V
2nd line
C - Capacitance (pF)
VGS = 4.5 V
0.0018
0.0006
1000
8000
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Ω)
10000
0.0024
6000
Coss
4000
2000
0
40
60
80
100
Crss
0
10
20
100
10
0
8
16
32
VDS - Drain-to-Source Voltage (V)
2nd line
On-Resistance vs. Drain Current
Capacitance
2.0
ID = 20 A
8
1000
1st line
2nd line
VDS = 30 V
VDS = 10 V
4
100
2
0
10
25
50
75
100
125
2nd line
RDS(on) - On-Resistance (Normalized)
10000
VDS = 20 V
40
Axis Title
Axis Title
10
2nd line
VGS - Gate-to-Source Voltage (V)
24
ID - Drain Current (A)
2nd line
6
5
Axis Title
10000
0
4
VDS - Drain-to-Source Voltage (V)
2nd line
0.003
0
3
10000
ID = 20 A
1.7
VGS = 10 V
1000
1.4
VGS = 4.5 V
1.1
100
0.8
0.5
10
-50
-25
0
25
50
75
100 125 150
Qg - Total Gate Charge (nC)
2nd line
TJ - Junction Temperature (°C)
2nd line
Gate Charge
On-Resistance vs. Junction Temperature
S16-0750-Rev. A, 25-Apr-16
1st line
2nd line
0
Document Number: 69684
3
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiJ438DP
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
Axis Title
100
0.01
10000
10000
1000
1
TJ = 25 °C
0.1
100
0.01
0.001
0.008
1000
0.006
TJ = 125 °C
0.004
100
0.002
TJ = 25 °C
0
10
0
0.2
0.4
0.6
0.8
1.0
1.2
10
0
2
4
6
8
10
VSD - Source-to-Drain Voltage (V)
2nd line
VGS - Gate-to-Source Voltage (V)
2nd line
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Axis Title
Axis Title
0.5
200
10000
0.2
10000
160
1000
2nd line
Power (W)
1000
ID = 5 mA
-0.4
120
1st line
2nd line
-0.1
1st line
2nd line
2nd line
VGS(th) - Variance (V)
1st line
2nd line
TJ = 150 °C
1st line
2nd line
2nd line
IS - Source Current (A)
2nd line
RDS(on) - On-Resistance (Ω)
ID = 20 A
10
80
100
ID = 250 μA
100
-0.7
40
-1.0
0
0.001
10
-50
-25
0
25
50
75
100 125 150
10
0.01
0.1
1
10
TJ - Temperature (°C)
2nd line
Time (s)
2nd line
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
Axis Title
1000
10000
IDM limited
ID limited
100 1000
μs
10
1 ms
10 ms
Limited by RDS(on) (1)
1
1st line
2nd line
2nd line
ID - Drain Current (A)
100
100 ms
100
1s
0.1
10 s
Ta = 25 °C
Single pulse
0.01
0.01
(1)
0.1
DC
BVDSS limited
1
10
10
100
VDS - Drain-to-Source Voltage (V)
VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
S16-0750-Rev. A, 25-Apr-16
Document Number: 69684
4
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiJ438DP
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
200
10000
1000
120
1st line
2nd line
2nd line
ID - Drain Current (A)
160
80
100
Package Limited
40
0
10
0
25
50
75
100
125
150
TC - Case Temperature (°C)
2nd line
Current Derating a
Axis Title
Axis Title
100
10000
2.5
80
10000
2.0
1.5
1st line
2nd line
40
2nd line
Power (W)
1000
1st line
2nd line
2nd line
Power (W)
1000
60
1.0
100
20
100
0.5
0
10
0
25
50
75
100
125
150
0
10
0
25
50
75
100
125
TC - Case Temperature (°C)
2nd line
TA - Ambient Temperature (°C)
2nd line
Power, Junction-to-Case
Power, Junction-to-Ambient
150
Note
a. The power dissipation PD is based on TJ (max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
S16-0750-Rev. A, 25-Apr-16
Document Number: 69684
5
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiJ438DP
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
10000
Duty Cycle = 0.5
Notes:
0.2
1000
1st line
2nd line
Normalized Effective Transient
Thermal Impedance
1
PDM
0.1
0.1
t1
t2
t
1. Duty cycle, D = t1
2
2. Per unit base = RthJA = 70 °C/W
0.05
0.02
3. TJM - TA = PDMZthJA
Single pulse
100
(t)
4. Surface mounted
0.01
0.0001
0.001
0.01
0.1
1
10
100
10
1000
Square Wave Pulse Duration (s)
2nd line
Normalized Thermal Transient Impedance, Junction-to-Ambient
Axis Title
1
10000
0.2
0.1
1000
0.05
0.1
1st line
2nd line
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.02
100
Single pulse
0.01
0.0001
10
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
2nd line
Normalized Thermal Transient Impedance, Junction-to-Case






















Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?69684.
S16-0750-Rev. A, 25-Apr-16
Document Number: 69684
6
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
PowerPAK® SO-8L Case Outline
for Non-Al Parts
W
E1
E
E2
W2
W3
W1
b2
D2
b
b1
L
L1
L1
A1
e
θ
D1
D
b3
b4
0.25 gauge line
Topside view
Backside view (single)
E2
W2
C
A
W3
W1
F
K
D3
D3
D2
b3
b4
Backside view (dual)
Revision: 16-May-16
Document Number: 69003
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
DIM.
Vishay Siliconix
MILLIMETERS
INCHES
MIN.
NOM.
MAX.
MIN.
NOM.
MAX.
A
1.00
1.07
1.14
0.039
0.042
0.045
A1
0.00
-
0.127
0.00
-
0.005
b
0.33
0.41
0.48
0.013
0.016
0.019
b1
0.44
0.51
0.58
0.017
0.020
0.023
b2
4.80
4.90
5.00
0.189
0.193
0.197
b3
0.094
b4
0.004
0.47
0.019
c
0.20
0.25
0.30
0.008
0.010
0.012
D
5.00
5.13
5.25
0.197
0.202
0.207
D1
4.80
4.90
5.00
0.189
0.193
0.197
D2
3.86
3.96
4.06
0.152
0.156
0.160
D3
1.63
1.73
1.83
0.064
0.068
0.072
e
1.27 BSC
0.050 BSC
E
6.05
6.15
6.25
0.238
0.242
0.246
E1
4.27
4.37
4.47
0.168
0.172
0.176
E2
3.18
3.28
3.38
0.125
0.129
0.133
F
-
-
0.15
-
-
0.006
L
0.62
0.72
0.82
0.024
0.028
0.032
L1
0.92
1.07
1.22
0.036
0.042
0.048
K
0.51
0.020
W
0.23
0.009
W1
0.41
0.016
W2
2.82
0.111
W3
2.96
0.117

0°
-
10°
0°
-
10°
ECN: T16-0221-Rev. D, 16-May-16
DWG: 5976
Note
• Millimeters will gover
Revision: 16-May-16
Document Number: 69003
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PAD Pattern
www.vishay.com
Vishay Siliconix
RECOMMENDED MINIMUM PAD FOR PowerPAK® SO-8L SINGLE
5.000
(0.197)
0.510
(0.020)
2.310
(0.091)
4.061
(0.160)
0.595
(0.023)
6.250
(0.246)
8.250
(0.325)
3.630
(0.143)
0.610
(0.024)
0.410
(0.016)
2.715
(0.107)
0.860
(0.034)
1.291
(0.051)
0.710
(0.028)
0.820
(0.032)
1.905
(0.075)
1.270
(0.050)
7.250
(0.285)
Recommended Minimum Pads
Dimensions in mm (inches)
Revision: 07-Feb-12
1
Document Number: 63818
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
1
Document Number: 91000