SiJA52DP

SiJA52DP
www.vishay.com
Vishay Siliconix
N-Channel 40 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
40
RDS(on) () Max.
ID (A) a, g
0.0017 at VGS = 10 V
60
0.0023 at VGS = 4.5 V
60
Qg (Typ.)
47.5 nC
• TrenchFET® Gen IV power MOSFET
• Tuned for the lowest RDS-Qoss FOM
• 100 % Rg and UIS tested
• Qgd / Qgs ratio < 1 optimizes switching
characteristics
PowerPAK® SO-8L Single
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
D
APPLICATIONS
6.
15
m
m
m
1
13
m
4
G
5.
Top View
3
S
2
S
1
S
D
• Synchronous rectification
• ORing
• High power density DC/DC
G
• VRMs and embedded DC/DC
Bottom View
• DC/AC inverters
Ordering Information: 
SiJA52DP-T1-GE3 (lead (Pb)-free and halogen-free)
N-Channel MOSFET
• Load switch
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
40
Gate-Source Voltage
VGS
+20, -16
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
60 g
TC = 70 °C
60 g
TA = 25 °C
ID
Continuous Source-Drain Diode Current
31.3 b, c
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
IDM
TC = 25 °C
TA = 25 °C
L = 0.1 mH
TC = 70 °C
TA = 25 °C
56.8
IS
4.3 b, c
IAS
35
EAS
61
mJ
48
30.7
PD
W
4.8 b, c
3 b, c
TA = 70 °C
Operating Junction and Storage Temperature Range
A
150
TC = 25 °C
Maximum Power Dissipation
V
39.6 b, c
TA = 70 °C
Pulsed Drain Current (t = 100 μs)
Unit
TJ, Tstg
-55 to +150
Soldering Recommendations (Peak Temperature) d, e
°C
260
THERMAL RESISTANCE RATINGS
Parameter
Maximum
Junction-to-Ambient b, f
Maximum Junction-to-Case (Drain)
Symbol
Typical
Maximum
t  10 s
RthJA
22
26
Steady State
RthJC
1.7
2.6
Unit
°C/W
Notes
a. TC = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8L is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 65 °C/W.
g. Package limited.
S16-0749-Rev. A, 25-Apr-16
Document Number: 67387
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiJA52DP
www.vishay.com
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
VDS
VGS = 0 V, ID = 250 μA
40
-
-
-
V
22
-
-
-5.3
-
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VDS/TJ
VGS(th) Temperature Coefficient
VGS(th)/TJ
Gate-Source Threshold Voltage
ID = 250 μA
mV/°C
VGS(th)
VDS = VGS, ID = 250 μA
1.1
-
2.4
V
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = +20 V, -16 V
-
-
± 100
nA
Zero Gate Voltage Drain Current
IDSS
On-State Drain Current a
ID(on)
Drain-Source On-State Resistance a
Forward Transconductance a
RDS(on)
gfs
VDS = 40 V, VGS = 0 V
-
-
1
VDS = 40 V, VGS = 0 V, TJ = 55 °C
-
-
10
VDS  5 V, VGS = 10 V
30
-
-
VGS = 10 V, ID = 15 A
-
0.0014
0.0017
VGS = 4.5 V, ID = 10 A
-
0.0019
0.0023
VDS = 10 V, ID = 15 A
-
114
-
-
7150
-
-
1325
-
-
230
-
μA
A

S
Dynamic b
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
VDS = 20 V, VGS = 0 V, f = 1 MHz
VDS = 20 V,VGS = 10 V, ID = 10 A
-
97.5
150
-
47.5
72
VDS = 20 V,VGS = 4.5 V, ID = 10 A
-
19.6
-
Gate-Drain Charge
Qgd
-
12.5
-
Output Charge
Qoss
VDS = 20 V, VGS = 0 V
-
50
75
Rg
f = 1 MHz
0.4
1.1
2.0
-
10
20
-
9
18
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
td(on)
tr
td(off)
VDD = 20 V, RL = 2 
ID  10 A, VGEN = 10 V, Rg = 1 
pF
nC

-
38
76
tf
-
9
18
td(on)
-
30
60
-
77
154
-
28
56
-
16
32
-
-
56.8
-
-
150
-
0.71
1.1
V
-
53
106
ns
-
76
152
nC
-
31
-
-
22
-
tr
td(off)
VDD = 20 V, RL = 2 
ID  10 A, VGEN = 4.5 V, Rg = 1 
tf
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulse Diode Forward Current (t = 100 μs)
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
TC = 25 °C
IS = 5 A
IF = 10 A, dI/dt = 100 A/μs, TJ = 25 °C
A
ns
Notes
a. Pulse test; pulse width  300 μs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.




Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S16-0749-Rev. A, 25-Apr-16
Document Number: 67387
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiJA52DP
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
Axis Title
150
200
10000
10000
VGS = 10 V thru 4 V
VGS = 3 V
60
100
30
1000
120
1st line
2nd line
1000
90
2nd line
ID - Drain Current (A)
160
1st line
2nd line
2nd line
ID - Drain Current (A)
120
TC = 25 °C
80
100
40
TC = -55 °C
TC = 125 °C
VGS = 2 V
0
0
10
0
0.5
1
1.5
2
2.5
10
0
1
2
3
4
VDS - Drain-to-Source Voltage (V)
2nd line
VGS - Gate-to-Source Voltage (V)
2nd line
Output Characteristics
Transfer Characteristics
Axis Title
Axis Title
0.003
10000
10000
2nd line
RDS(on) - On-Resistance (Ω)
5
Ciss
8000
1000
1st line
2nd line
0.0018
0.0012
100
VGS = 10 V
0.0006
1000
6000
1st line
2nd line
VGS = 4.5 V
2nd line
C - Capacitance (pF)
0.0024
10000
4000
Coss
100
2000
Crss
0
0
10
20
40
60
80
100
10
0
8
16
VDS - Drain-to-Source Voltage (V)
2nd line
On-Resistance vs. Drain Current
Capacitance
2.0
ID = 10 A
8
VDS = 30 V
1000
1st line
2nd line
VDS = 20 V
VDS = 10 V
4
100
2
0
10
20
40
60
80
100
2nd line
RDS(on) - On-Resistance (Normalized)
10000
6
40
Axis Title
Axis Title
2nd line
VGS - Gate-to-Source Voltage (V)
32
ID - Drain Current (A)
2nd line
10
0
24
10000
ID = 15 A
1.7
VGS = 10 V
1000
1.4
VGS = 4.5 V
1.1
100
0.8
0.5
10
-50
-25
0
25
50
75
100 125 150
Qg - Total Gate Charge (nC)
2nd line
TJ - Junction Temperature (°C)
2nd line
Gate Charge
On-Resistance vs. Junction Temperature
S16-0749-Rev. A, 25-Apr-16
1st line
2nd line
0
Document Number: 67387
3
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiJA52DP
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
Axis Title
100
0.005
10000
10000
1000
1
TJ = 25 °C
0.1
100
0.01
0.001
0.004
1000
0.003
TJ = 125 °C
0.002
100
0.2
0.4
0.6
0.8
1.0
TJ = 25 °C
0.001
0
10
0
10
0
1.2
2
4
6
8
10
VSD - Source-to-Drain Voltage (V)
2nd line
VGS - Gate-to-Source Voltage (V)
2nd line
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Axis Title
Axis Title
0.5
200
10000
0.2
10000
160
1000
2nd line
Power (W)
1000
ID = 5 mA
-0.4
120
1st line
2nd line
-0.1
1st line
2nd line
2nd line
VGS(th) - Variance (V)
1st line
2nd line
TJ = 150 °C
1st line
2nd line
2nd line
IS - Source Current (A)
2nd line
RDS(on) - On-Resistance (Ω)
ID = 15 A
10
80
100
ID = 250 μA
100
-0.7
40
-1.0
0
0.001
10
-50
-25
0
25
50
75
100 125 150
10
0.01
0.1
1
10
TJ - Temperature (°C)
2nd line
Time (s)
2nd line
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
Axis Title
1000
10000
IDM limited
ID limited
100 μs
1000
10
1 ms
10 ms
Limited by RDS(on) (1)
1
100 ms
1st line
2nd line
2nd line
ID - Drain Current (A)
100
100
1 Sec
0.1
10 Sec
Ta = 25 °C
Single pulse
0.01
0.01
(1)
0.1
DC
BVDSS limited
1
10
10
100
VDS - Drain-to-Source Voltage (V)
VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
S16-0749-Rev. A, 25-Apr-16
Document Number: 67387
4
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiJA52DP
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
180
10000
1000
108
1st line
2nd line
2nd line
ID - Drain Current (A)
144
Package Limited
72
100
36
0
10
0
25
50
75
100
125
150
TC - Case Temperature (°C)
2nd line
Current Derating a
Axis Title
Axis Title
60
10000
2.5
48
10000
2.0
1.5
1st line
2nd line
24
2nd line
Power (W)
1000
1st line
2nd line
2nd line
Power (W)
1000
36
1.0
100
12
100
0.5
0
10
0
25
50
75
100
125
150
0
10
0
25
50
75
100
125
TC - Case Temperature (°C)
2nd line
TA - Ambient Temperature (°C)
2nd line
Power, Junction-to-Case
Power, Junction-to-Ambient
150
Note
a. The power dissipation PD is based on TJ (max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
S16-0749-Rev. A, 25-Apr-16
Document Number: 67387
5
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiJA52DP
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
10000
Duty Cycle = 0.5
Notes:
0.2
1000
1st line
2nd line
Normalized Effective Transient
Thermal Impedance
1
PDM
0.1
0.1
t1
t2
t
1. Duty cycle, D = t1
2
2. Per unit base = RthJA = 70 °C/W
0.05
0.02
3. TJM - TA = PDMZthJA
Single pulse
100
(t)
4. Surface mounted
0.01
0.0001
0.001
0.01
0.1
1
10
100
10
1000
Square Wave Pulse Duration (s)
2nd line
Normalized Thermal Transient Impedance, Junction-to-Ambient
Axis Title
10000
Duty Cycle = 0.5
0.2
1000
0.1
1st line
2nd line
Normalized Effective Transient
Thermal Impedance
1
0.05
0.1
0.02
Single pulse
0.01
0.0001
100
10
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
2nd line
Normalized Thermal Transient Impedance, Junction-to-Case






















Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?67387.
S16-0749-Rev. A, 25-Apr-16
Document Number: 67387
6
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
PowerPAK® SO-8L Case Outline
for Non-Al Parts
W
E1
E
E2
W2
W3
W1
b2
D2
b
b1
L
L1
L1
A1
e
θ
D1
D
b3
b4
0.25 gauge line
Topside view
Backside view (single)
E2
W2
C
A
W3
W1
F
K
D3
D3
D2
b3
b4
Backside view (dual)
Revision: 16-May-16
Document Number: 69003
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
DIM.
Vishay Siliconix
MILLIMETERS
INCHES
MIN.
NOM.
MAX.
MIN.
NOM.
MAX.
A
1.00
1.07
1.14
0.039
0.042
0.045
A1
0.00
-
0.127
0.00
-
0.005
b
0.33
0.41
0.48
0.013
0.016
0.019
b1
0.44
0.51
0.58
0.017
0.020
0.023
b2
4.80
4.90
5.00
0.189
0.193
0.197
b3
0.094
b4
0.004
0.47
0.019
c
0.20
0.25
0.30
0.008
0.010
0.012
D
5.00
5.13
5.25
0.197
0.202
0.207
D1
4.80
4.90
5.00
0.189
0.193
0.197
D2
3.86
3.96
4.06
0.152
0.156
0.160
D3
1.63
1.73
1.83
0.064
0.068
0.072
e
1.27 BSC
0.050 BSC
E
6.05
6.15
6.25
0.238
0.242
0.246
E1
4.27
4.37
4.47
0.168
0.172
0.176
E2
3.18
3.28
3.38
0.125
0.129
0.133
F
-
-
0.15
-
-
0.006
L
0.62
0.72
0.82
0.024
0.028
0.032
L1
0.92
1.07
1.22
0.036
0.042
0.048
K
0.51
0.020
W
0.23
0.009
W1
0.41
0.016
W2
2.82
0.111
W3
2.96
0.117

0°
-
10°
0°
-
10°
ECN: T16-0221-Rev. D, 16-May-16
DWG: 5976
Note
• Millimeters will gover
Revision: 16-May-16
Document Number: 69003
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PAD Pattern
www.vishay.com
Vishay Siliconix
RECOMMENDED MINIMUM PAD FOR PowerPAK® SO-8L SINGLE
5.000
(0.197)
0.510
(0.020)
2.310
(0.091)
4.061
(0.160)
0.595
(0.023)
6.250
(0.246)
8.250
(0.325)
3.630
(0.143)
0.610
(0.024)
0.410
(0.016)
2.715
(0.107)
0.860
(0.034)
1.291
(0.051)
0.710
(0.028)
0.820
(0.032)
1.905
(0.075)
1.270
(0.050)
7.250
(0.285)
Recommended Minimum Pads
Dimensions in mm (inches)
Revision: 07-Feb-12
1
Document Number: 63818
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
1
Document Number: 91000