New Product Si5418DU Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0145 at VGS = 10 V 12 0.0185 at VGS = 4.5 V 12 VDS (V) 30 Qg (Typ.) 9.5 nC PowerPAK ChipFET Single • Halogen-free • TrenchFET® Power MOSFET RoHS • New Thermally Enhanced PowerPAK® ChipFET® Package - Small Footprint Area - Low On-Resistance - Thin 0.8 mm Profile COMPLIANT 1 2 Marking Code D 3 D D D 7 Lot Traceability and Date Code 4 G APPLICATIONS XXX D D 8 AI Part # Code D • Load Switch, PA Switch, and Battery Switch for Portable Applications • DC-DC Synchronous Rectification S 6 G S 5 Bottom View S N-Channel MOSFET Ordering Information: Si5418DU-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) TA = 25 °C 12a ID 11.6b, c 9.3b, c 40 TA = 70 °C IDM Pulsed Drain Current Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C TC = 70 °C TA = 25 °C 2.6b, c 31 20 PD W 3.1b, c TA = 70 °C 2b, c - 55 to 150 TJ, Tstg Operating Junction and Storage Temperature Range A 12a IS TC = 25 °C Maximum Power Dissipation V 12a TC = 25 °C TC = 70 °C Unit Soldering Recommendations (Peak Temperature)d, e °C 260 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, f Maximum Junction-to-Case (Drain) Symbol Typical Maximum t≤5s RthJA 34 40 Steady State RthJC 3 4 Unit °C/W Notes: a. Package limited. b. Surface Mounted on 1" x 1" FR4 board. c. t = 5 s. d. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 90 °C/W. Document Number: 69822 S-81448-Rev. B, 23-Jun-08 www.vishay.com 1 New Product Si5418DU Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 250 µA 30 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS/TJ VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage ID = 250 µA VGS(th) VDS = VGS, ID = 250 µA Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea RDS(on) gfs V 40 mV/°C -7 1.2 3 V ± 100 nA VDS = 30 V, VGS = 0 V 1 VDS = 30 V, VGS = 0 V, TJ = 55 °C 10 VDS ≥ 5 V, VGS = 10 V 20 µA A VGS = 10 V, ID = 7.7 A 0.012 0.0145 VGS = 4.5 V, ID = 6.9 A 0.015 0.0185 VDS = 15 V, ID = 7.7 A 31 Ω S b Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Rg 1350 VDS = 15 V, VGS = 0 V, f = 1 MHz 80 VDS = 15 V, VGS = 10 V, ID = 11.6 A VDS = 15 V, VGS = 4.5 V, ID = 11.6 A td(off) 20 30 9.5 15 4.5 f = 1 MHz VDD = 15 V, RL = 1.6 Ω ID ≅ 9.3 A, VGEN = 4.5 V, Rg = 1 Ω Ω 3.5 20 30 10 15 20 30 tf 10 15 td(on) 10 15 10 15 20 30 10 15 tr td(off) nC 2.7 td(on) tr pF 190 VDD = 15 V, RL = 1.6 Ω ID ≅ 9.3 A, VGEN = 10 V, Rg = 1 Ω tf ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Current ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb TC = 25 °C 12 40 IS = 9.3 A, VGS = 0 V IF = 9.3 A, dI/dt = 100 A/µs, TJ = 25 °C A 0.8 1.2 V 25 40 ns 19 30 nC 14 11 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 69822 S-81448-Rev. B, 23-Jun-08 New Product Si5418DU Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 40 10 VGS = 10 thru 5 V VGS = 4 V 8 ID - Drain Current (A) I D - Drain Current (A) 32 24 16 8 TC = - 55 °C 6 4 TC = 25 °C 2 TC = 125 °C VGS = 3 V 0 0.0 0.5 1.0 1.5 2.0 2.5 0 0.0 3.0 0.5 VDS - Drain-to-Source Voltage (V) 1.0 2.5 3.0 3.5 Transfer Characteristics 1800 0.020 1500 0.018 0.016 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 2.0 VGS - Gate-to-Source Voltage (V) Output Characteristics VGS = 4.5 V 0.014 VGS = 10 V Ciss 1200 900 600 0.012 Coss 300 Crss 0 0.010 0 8 16 24 32 0 40 5 ID - Drain Current (A) 10 15 20 25 30 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 10 1.6 ID = 11.6 A ID = 8 A 8 VGS = 10 V VDS = 15 V 6 VDS = 24 V 4 2 (Normalized) 1.4 RDS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 1.5 1.2 1.0 0.8 0 0 5 10 15 Qg - Total Gate Charge(nC) Gate Charge Document Number: 69822 S-81448-Rev. B, 23-Jun-08 20 25 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 3 New Product Si5418DU Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.035 100 TJ = 150 °C R DS(on) - On-Resistance (Ω) I S - Source Current (A) ID = 7.7 A TJ = 25 °C 10 1 0.0 0.030 0.025 TA = 125 °C 0.020 0.015 TA = 25 °C 0.010 0.2 0.4 0.6 0.8 1.0 1.2 0 1.4 2 VSD - Source-to-DrainVoltage(V) 4 6 8 10 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 2.8 50 2.6 40 Power (W) VGS(th) (V) 2.4 2.2 ID = 250 µA 2.0 30 20 1.8 10 1.6 1.4 - 50 - 25 0 25 50 75 100 125 0 150 0.001 0.01 TJ - Temperature (°C) 0.1 1 10 100 1000 Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 100 Limited by RDS(on)* 100 µs I D - Drain Current (A) 10 1 ms 1 10 ms 100 ms 1s 10 s 0.1 TA = 25 °C Single Pulse 0.01 0.1 BVDSS Limited DC 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which R DS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 69822 S-81448-Rev. B, 23-Jun-08 New Product Si5418DU Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 35 50 30 Power Dissipation (W) ID - Drain Current (A) 40 30 20 Package Limited 25 20 15 10 10 5 0 0 0 25 50 75 100 TC - Case Temperature (°C) Current Derating* 125 150 25 50 75 100 125 150 TC - Case Temperature (°C) Power Derating * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 69822 S-81448-Rev. B, 23-Jun-08 www.vishay.com 5 New Product Si5418DU Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 75 °C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.02 0.1 10-4 Single Pulse 10-3 10-2 Square Wave Pulse Duration (s) 10-1 1 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?69822. www.vishay.com 6 Document Number: 69822 S-81448-Rev. B, 23-Jun-08 Package Information www.vishay.com Vishay Siliconix PowerPAK® ChipFET® Case Outline D (7) (6) (5) (1) (2) (3) (4) E (8) Pin #1 indicator Side view of single e b H D1 D(2) D2 K D(3) L G(4) K1 D2 SI(1) GI(2) S2(3) D1(8) D1(7) D2(6) Detail Z G2(4) K2 L D(1) A1 C A Z Side view of dual E1 E2 E3 H D3 D(8) D(7) D(6) S(5) K3 Backside view of dual pad Backside view of single pad DIM. D2(5) MILLIMETERS INCHES MIN. NOM. MAX. MIN. NOM. MAX. A 0.70 0.75 0.85 0.028 0.030 0.033 A1 0 - 0.05 0 - 0.002 b 0.25 0.30 0.35 0.010 0.012 0.014 C 0.15 0.20 0.25 0.006 0.008 0.010 D 2.92 3.00 3.08 0.115 0.118 0.121 D1 1.75 1.87 2.00 0.069 0.074 0.079 D2 1.07 1.20 1.32 0.042 0.047 0.052 D3 0.20 0.25 0.30 0.008 0.010 0.012 E 1.82 1.90 1.98 0.072 0.075 0.078 E1 1.38 1.50 1.63 0.054 0.059 0.064 E2 0.92 1.05 1.17 0.036 0.041 0.046 E3 0.45 0.50 0.55 0.018 0.020 0.022 e 0.65 BSC 0.026 BSC H 0.15 0.20 0.25 0.006 0.008 0.010 K 0.25 - - 0.010 - - K1 0.30 - - 0.012 - - K2 0.20 - - 0.008 - - K3 0.20 - - 0.008 - - L 0.30 0.35 0.40 0.012 0.014 0.016 C14-0630-Rev. E, 21-Jul-14 DWG: 5940 Note • Millimeters will govern Document Number: 73203 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Revision: 21-Jul-14 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR PowerPAK® ChipFET® Single 0.225 (0.009) 0.350 (0.014) 0.650 (0.026) 0.200 (0.008) 0.300 (0.012) 0.300 (0.012) 0.100 (0.004) 1.500 (0.059) 1.900 (0.075) 0.250 (0.010) 0.500 (0.020) 0.350 (0.014) 0.350 (0.014) 1.870 (0.074) 0.305 (0.012) 2.575 (0.101) Recommended Minimum Pads Dimensions in mm/(Inches) Return to Index APPLICATION NOTE Document Number: 69948 Revision: 21-Jan-08 www.vishay.com 9 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000