Si4010DY www.vishay.com Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () (Max.) ID (A)a 0.0034 at VGS = 10 V 31.3 0.0044 at VGS = 4.5 V 27.5 • TrenchFET® Power MOSFET Qg (Typ.) • 100 % Rg and UIS Tested 22.5 nC • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 SO-8 APPLICATIONS S 1 8 D S 2 7 D S 3 6 D • Telecom/Server G 4 5 D • Industrial D • Synchronous Rectification • DC/DC Conversion G Top View S Ordering Information: Si4010DY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage VDS 30 Gate-Source Voltage VGS + 20, - 16 TC = 25 °C 24.9 ID TA = 25 °C 20.2b, c 16.1b, c TA = 70 °C Pulsed Drain Current (t = 300 μs) IDM TC = 25 °C Continuous Source-Drain Diode Current Single Pulse Avalanche Current L = 0.1 mH 5.4 2.2b, c IAS 20 EAS 20 TC = 25 °C 3.8 PD TA = 25 °C W 2.5b, c 1.6b, c TA = 70 °C Operating Junction and Storage Temperature Range mJ 6 TC = 70 °C Maximum Power Dissipation A 100 IS TA = 25 °C Single Pulse Avalanche Energy V 31.3 TC = 70 °C Continuous Drain Current (TJ = 150 °C) Unit TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Maximum Junction-to-Ambientb, d t 10 s RthJA 37 50 Maximum Junction-to-Foot (Drain) Steady State RthJF 17 21 Unit °C/W Notes a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under steady state conditions is 85 °C/W. S13-2179-Rev. A, 14-Oct-13 Document Number: 62915 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si4010DY www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 250 μA 30 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VDS/TJ ID = 250 μA VGS(th) Temperature Coefficient VGS(th)/TJ Gate-Source Threshold Voltage VGS(th) VDS = VGS , ID = 250 μA IGSS Gate-Source Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea RDS(on) gfs V 14 mV/°C - 5.5 2.3 V VDS = 0 V, VGS = + 20 V, - 16 V ± 100 nA VDS = 30 V, VGS = 0 V 1 VDS = 30 V, VGS = 0 V, TJ = 55 °C 10 VDS 5 V, VGS = 10 V 1 40 μA A VGS = 10 V, ID = 15 A 0.0028 0.0034 VGS = 4.5 V, ID = 10 A 0.0035 0.0044 VDS = 15 V, ID = 15 A 105 VDS = 15 V, VGS = 0 V, f = 1 MHz 1040 S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Output Charge Qoss VDS = 15 V, VGS = 0 V Rg f = 1 MHz Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time 3595 VDS = 15 V, VGS = 10 V, ID = 10 A VDS = 15 V, VGS = 4.5 V, ID = 10 A 51 77 22.5 34 nC 8.6 4 td(on) tr pF 79 VDD = 15 V, RL = 1.5 ID 10 A, VGEN = 4.5 V, Rg = 1 30.5 0.5 1.25 2 24 48 17 34 25 50 tf 12 24 td(on) 12 24 td(off) tr td(off) VDD = 15 V, RL = 1.5 ID 10 A, VGEN = 1.5 V, Rg = 1 tf 10 20 30 60 9 18 ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Current ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb TC = 25 °C 5.4 100 IS = 5 A, IF = 10 A, dI/dt = 100 A/μs, TJ = 25 °C A 0.73 1.1 V 36 70 ns 24 48 nC 16 20 ns Notes a. Pulse test; pulse width 300 μs, duty cycle 2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S13-2179-Rev. A, 14-Oct-13 Document Number: 62915 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si4010DY www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 100 VGS = 10 V thru 4 V 80 ID - Drain Current (A) ID - Drain Current (A) 80 60 VGS = 3 V 40 20 60 TC = 25 °C 40 TC = 125 °C 20 TC = - 55 °C VGS = 2 V 0 0 0.0 0.5 1.0 1.5 2.0 2.5 0.0 1.0 2.0 3.0 4.0 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Transfer Characteristics 0.0045 4000 0.0040 3200 Ciss VGS = 4.5 V C - Capacitance (pF) RDS(on) - On-Resistance (Ω) Output Characteristics 0.0035 0.0030 VGS = 10 V 2400 Coss 1600 0.0025 800 0.0020 0 0 16 32 48 ID - Drain Current (A) 64 80 Crss 0 5 10 15 20 25 VDS - Drain-to-Source Voltage (V) 30 Capacitance On-Resistance vs. Drain Current 1.7 10 ID = 10 A ID = 15 A VGS = 10 V 1.5 8 RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 5.0 VDS = 15 V 6 VDS = 10 V VDS = 20 V 4 1.3 VGS = 4.5 V 1.1 0.9 2 0.7 0 0 11 22 33 44 Qg - Total Gate Charge (nC) Gate Charge S13-2179-Rev. A, 14-Oct-13 55 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature Document Number: 62915 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si4010DY www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 0.015 RDS(on) - On-Resistance (Ω) IS - Source Current (A) 10 TJ = 150 °C TJ = 25 °C 1 0.1 0.01 0.012 0.009 TJ = 125 °C 0.006 0.003 0.001 TJ = 25 °C 0.000 0.0 0.2 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) 1.2 0 Source-Drain Diode Forward Voltage 2 4 6 8 VGS - Gate-to-Source Voltage (V) 10 On-Resistance vs. Gate-to-Source Voltage 0.4 200 0.2 160 0 Power (W) VGS(th) Variance (V) ID = 15 A ID = 5 mA - 0.2 120 80 - 0.4 ID = 250 μA 40 - 0.6 - 0.8 - 50 - 25 0 25 50 75 TJ - Temperature (°C) 100 125 150 Threshold Voltage 0 0.001 0.01 0.1 Time (s) 1 10 Single Pulse Power, Junction-to-Ambient 100 IDM Limited ID Limited 1 ms ID - Drain Current (A) 10 10 ms Limited by RDS(on)* 1 100 ms 1s 10 s 0.1 DC TA = 25 °C Single Pulse 0.01 0.01 BVDSS Limited 0.1 1 10 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified 100 Safe Operating Area, Junction-to-Ambient S13-2179-Rev. A, 14-Oct-13 Document Number: 62915 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si4010DY www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 35 ID - Drain Current (A) 28 21 14 7 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) 8.0 2.0 6.4 1.6 Power (W) Power (W) Current Derating* 4.8 1.2 3.2 0.8 1.6 0.4 0.0 0.0 0 25 50 75 100 TC - Case Temperature (°C) Power, Junction-to-Foot 125 150 0 25 50 75 100 TA - Ambient Temperature (°C) 125 150 Power, Junction-to-Ambient * The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. S13-2179-Rev. A, 14-Oct-13 Document Number: 62915 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si4010DY www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 85 °C/W 3. T JM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 0.0001 0.001 0.01 0.1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?62915. S13-2179-Rev. A, 14-Oct-13 Document Number: 62915 6 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 8 6 7 5 E 1 3 2 H 4 S h x 45 D C 0.25 mm (Gage Plane) A e B All Leads q A1 L 0.004" MILLIMETERS INCHES DIM Min Max Min Max A 1.35 1.75 0.053 0.069 A1 0.10 0.20 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 e 0.101 mm 1.27 BSC 0.157 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0° 8° 0° 8° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 Document Number: 71192 11-Sep-06 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-8 0.172 (4.369) 0.028 0.022 0.050 (0.559) (1.270) 0.152 (3.861) 0.047 (1.194) 0.246 (6.248) (0.711) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index www.vishay.com 22 Document Number: 72606 Revision: 21-Jan-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000