Si4062DY Vishay Siliconix N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) () Max. 60 0.0042 at VGS = 10 V 32.1 0.0054 at VGS = 6 V 28.3 0.0069 at VGS = 4.5 V 25 • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 Qg (Typ.) 18.8 nC APPLICATIONS SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D • • • • • • D DC/DC Primary Side Switch Industrial Synchronous Rectification Load Switch DC/DC Converters DC/AC Inverters G Top View S Ordering Information: Si4062DY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage VDS 60 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C 32.1 TC = 70 °C 25.7 ID TA = 25 °C 17b, c IDM Continuous Source-Drain Diode Current Single Pulse Avalanche Current Avalanche Energy TC = 25 °C 7 3.1b, c IAS 25 EAS 31.2 TC = 25 °C Maximum Power Dissipation mJ 7.8 TC = 70 °C 5 PD TA = 25 °C W 3.5b, c 2.2b, c TA = 70 °C Operating Junction and Storage Temperature Range A 150 IS TA = 25 °C L = 0.1 mH V 21.5b, c TA = 70 °C Pulsed Drain Current (t = 100 µs) Unit TJ, Tstg °C - 55 to 150 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d t 10 s Maximum Junction-to-Foot (Drain) Steady State Notes: a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under steady state conditions is 80 °C/W. Document Number: 62857 S13-1383-Rev. A, 17-Jun-13 Symbol Typical Maximum RthJA 29 35 RthJF 13 16 For technical questions, contact: [email protected] Unit °C/W www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si4062DY Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 250 µA 60 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS/TJ VDS Temperature Coefficient VGS(th) Temperature Coefficient VGS(th)/TJ Gate-Source Threshold Voltage V 96 ID = 250 µA mV/°C - 5.8 VGS(th) VDS = VGS , ID = 250 µA 2.6 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 60 V, VGS = 0 V 1 VDS = 60 V, VGS = 0 V, TJ = 55 °C 10 On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea RDS(on) gfs VDS 5 V, VGS = 10 V 1.4 30 µA A VGS 10 V, ID = 20 A 0.0035 0.0042 VGS 6 V, ID = 15 A 0.0043 0.0054 VGS 4.5 V, ID = 10 A 0.0055 0.0069 VDS = 15 V, ID = 20 A 80 S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 3175 VDS = 30 V, VGS = 0 V, f = 1 MHz 1265 VDS = 30 V, VGS = 10 V, ID = 10 A 40 60 18.8 29 95 Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Output Charge Qoss VDS = 30 V, VGS = 0 V Rg f = 1 MHz Gate Resistance tr Rise Time td(off) Turn-Off Delay Time Fall Time Turn-On Delay Time VDD = 30 V, RL = 3 ID 10 A, VGEN = 4.5 V, Rg = 1 51.5 80 2 3 52 100 105 200 26 50 20 td(on) 16 30 6 12 VDD = 30 V, RL = 3 ID 10 A, VGEN = 10 V, Rg = 1 tf Fall Time 0.5 10 td(off) Turn-Off Delay Time nC 3.8 tf tr Rise Time 8.9 VDS = 30 V, VGS = 4.5 V, ID = 10 A td(on) Turn-On Delay Time pF 34 70 8 16 ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Current (tp = 100 µs) ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb TC = 25 °C 7.1 150 IS = 5 A IF = 5 A, di/dt = 100 A/µs, TJ = 25 °C A 0.74 1.1 V 46 92 ns 44 88 nC 20 26 ns Notes: a. Pulse test; pulse width 300 µs, duty cycle 2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 For technical questions, contact: [email protected] Document Number: 62857 S13-1383-Rev. A, 17-Jun-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si4062DY Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 120 150 VGS = 10 V thru 5 V 100 VGS = 4 V ID - Drain Current (A) ID - Drain Current (A) 120 90 60 30 80 TC = 25 °C 60 40 20 VGS = 3 V VGS = 2 V 1 2 3 4 TC = - 55 °C 0 0 0 TC = 125 °C 0.0 5 1.0 2.0 3.0 4.0 5.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.0070 4000 0.0062 3200 6.0 VGS = 4.5 V C - Capacitance (pF) RDS(on) - On-Resistance (Ω) Ciss 0.0054 VGS = 6.0 V 0.0046 0.0038 2400 Coss 1600 800 VGS = 10 V Crss 0.0030 0 0 20 40 60 80 100 0 12 ID - Drain Current (A) 24 48 60 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 2.0 10 8 RDS(on) - On-Resistance (Normalized) ID = 10 A VGS - Gate-to-Source Voltage (V) 36 VDS = 30 V 6 VDS = 20 V 4 VDS = 40 V 2 ID = 20 A VGS = 10 V 1.7 1.4 VGS = 4.5 V 1.1 0.8 0.5 0 0 8 16 24 32 40 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature Document Number: 62857 S13-1383-Rev. A, 17-Jun-13 For technical questions, contact: [email protected] www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si4062DY Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 0.025 TJ = 25 °C 1 0.1 0.01 0.001 0.015 TJ = 125 °C 0.010 0.005 TJ = 25 °C 0.000 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 4 6 8 10 VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.5 500 0.2 400 - 0.1 300 ID = 5 mA - 0.4 - 0.7 - 1.0 - 25 0 25 50 200 100 ID = 250 μA - 50 2 VGS - Gate-to-Source Voltage (V) Power (W) VGS(th) - Variance (V) ID = 20 A 0.020 TJ = 150 °C RDS(on) - On-Resistance (Ω) IS - Source Current (A) 10 75 100 125 150 0 0.001 0.01 0.1 1 10 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 1000 IDM Limited ID - Drain Current (A) 100 ID Limited 100 μs 10 1 ms 10 ms 1 Limited by RDS(on)* 100 ms 1s 0.1 TA = 25 °C Single Pulse 0.01 0.01 10 s BVDSS Limited DC 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 For technical questions, contact: [email protected] Document Number: 62857 S13-1383-Rev. A, 17-Jun-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si4062DY Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 35 ID - Drain Current (A) 28 21 14 7 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) 10 2.0 8 1.6 Power (W) Power (W) Current Derating* 6 1.2 4 0.8 2 0.4 0 0.0 0 25 50 75 100 125 150 0 25 50 75 100 125 TC - Case Temperature (°C) TA - Ambient Temperature (°C) Power, Junction-to-Foot Power, Junction-to-Ambient 150 * The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 62857 S13-1383-Rev. A, 17-Jun-13 For technical questions, contact: [email protected] www.vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si4062DY Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM t1 0.05 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 80 °C/W 0.02 3. T JM - TA = PDMZthJA(t) Single Pulse 0.01 0.0001 0.001 4. Surface Mounted 0.01 0.1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 0.0001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?62857. www.vishay.com 6 For technical questions, contact: [email protected] Document Number: 62857 S13-1383-Rev. A, 17-Jun-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 8 6 7 5 E 1 3 2 H 4 S h x 45 D C 0.25 mm (Gage Plane) A e B All Leads q A1 L 0.004" MILLIMETERS INCHES DIM Min Max Min Max A 1.35 1.75 0.053 0.069 A1 0.10 0.20 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 e 0.101 mm 1.27 BSC 0.157 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0° 8° 0° 8° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 Document Number: 71192 11-Sep-06 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-8 0.172 (4.369) 0.028 0.022 0.050 (0.559) (1.270) 0.152 (3.861) 0.047 (1.194) 0.246 (6.248) (0.711) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index www.vishay.com 22 Document Number: 72606 Revision: 21-Jan-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000