New Product Si4491EDY Vishay Siliconix P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID a RDS(on) () Max. 0.0065 at VGS = - 10 V - 29 0.0082 at VGS = - 6 V - 23 0.0112 at VGS = - 4.5 V - 20 - 30 • Extended VGS range (± 25 V) for adaptor switch applications • Extremely low RDS(on) • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Typical ESD Performance: 4000 V (HBM) • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 Qg (Typ.) 66 nC SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D APPLICATIONS S • Adaptor Switch, Load Switch • Power Management • Notebook Computers and Portable Battery Packs G Top View Ordering Information: Si4491EDY-T1-GE3 (Lead (Pb)-free and Halogen-free) D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Drain-Source Voltage Parameter Symbol VDS Limit - 30 Gate-Source Voltage VGS ± 25 TC = 25 °C Continuous Drain Current (TJ = 150 °C) - 20.7 ID TA = 25 °C - 17.3 - 13.9b, c - 60 TA = 70 °C Single Pulse Avalanche Current Single Pulse Avalanche Energy IDM TC = 25 °C IAS - 2.6b, c - 40 EAS 80 TC = 25 °C Maximum Power Dissipation mJ 6.9 TC = 70 °C 4.4 PD TA = 25 °C W 3.1b, c 2b, c - 55 to 150 TA = 70 °C Operating Junction and Storage Temperature Range A - 5.8b, c IS TA = 25 °C L = 0.1 mH V - 25.8 TC = 70 °C Pulsed Drain Current (t = 300 µs) Continuous Source-Drain Diode Current Unit TJ, Tstg °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d Maximum Junction-to-Foot (Drain) Symbol Typical Maximum t 10 s RthJA 33 40 Steady State RthJF 15 17 Unit °C/W Notes: a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under steady state conditions is 90 °C/W. Document Number: 63866 S12-2337-Rev. B, 01-Oct-12 For technical questions, contact: [email protected] www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product Si4491EDY Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = - 250 µA - 30 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS/TJ VDS Temperature Coefficient VGS(th) Temperature Coefficient VGS(th)/TJ Gate-Source Threshold Voltage VGS(th) IGSS Gate-Source Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea RDS(on) Forward Transconductancea gfs Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg ID = - 250 µA VDS = VGS , ID = - 250 µA tr td(off) Turn-Off Delay Time Fall Time Turn-On Delay Time VDS = 0 V, VGS = ± 20 V ± 15 VDS = - 30 V, VGS = 0 V -1 VDS = - 30 V, VGS = 0 V, TJ = 55 °C VDS - 5 V, VGS = - 10 V V µA - 10 - 20 A VGS - 10 V, ID = - 13 A 0.0054 0.0065 VGS - 6 V, ID = - 10 A 0.0068 0.0082 VGS - 4.5 V, ID = - 8 A 0.0093 0.0112 VDS = - 15 V, ID = - 13 A 44 S 4620 VDS = - 15 V, VGS = 0 V, f = 1 MHz 880 pF 820 VDS = - 15 V, VGS = - 10 V, ID = - 17.3 A 102 153 66 80 VDS = - 15 V, VGS = - 5 V, ID = - 17.3 A 16 nC 28 f = 1 MHz VDD = 0 V, RL = 1.5 ID - 10 A, VGEN = - 4.5 V, Rg = 1 0.3 1.3 2.6 70 105 70 105 45 68 41 td(on) 18 30 VDD = - 15 V, RL = 1.5 ID - 10 A, VGEN = - 10 V, Rg = 1 tf Fall Time - 2.8 ± 150 27 td(off) Turn-Off Delay Time - 1.2 tf tr Rise Time mV/°C 6 VDS = 0 V, VGS = ± 25 V td(on) Turn-On Delay Time Rise Time V - 24 15 25 52 80 14 25 ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Current ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb TC = 25 °C - 5.8 - 60 IS = - 10 A, VGS = 0 V IF = - 10 A, dI/dt = 100 A/µs, TJ = 25 °C A - 0.78 - 1.2 V 35 53 ns 25 38 nC 19 16 ns Notes: a. Pulse test; pulse width 300 µs, duty cycle 2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 For technical questions, contact: [email protected] Document Number: 63866 S12-2337-Rev. B, 01-Oct-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product Si4491EDY Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 10-02 0.015 TJ = 25 °C 10-03 IGSS - Gate Current (A) IGSS - Gate Current (mA) 0.012 0.009 0.006 10-04 TJ = 150 °C 10-05 10-06 TJ = 25 °C 10-07 0.003 10-08 10-09 0.000 0 6 12 18 24 30 0 6 VGS - Gate-Source Voltage (V) 12 18 24 30 36 VGS - Gate-to-Source Voltage (V) Gate Current vs. Gate-Source Voltage Gate Current vs. Gate-Source Voltage 10 60 VGS = 10 V thru 5 V VGS = 4 V 8 ID - Drain Current (A) ID - Drain Current (A) 45 30 6 4 TC = 25 °C 15 2 TC = 125 °C VGS = 3 V TC = - 55 °C 0 0 0 0.5 1 1.5 2 VDS - Drain-to-Source Voltage (V) 0 1 2 3 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 4 7200 0.014 0.011 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 6000 VGS = 4.5 V 0.008 VGS = 6 V 0.005 VGS = 10 V Ciss 4800 3600 2400 Coss Crss 1200 0 0.002 0 15 30 ID - Drain Current (A) 45 On-Resistance vs. Drain Current Document Number: 63866 S12-2337-Rev. B, 01-Oct-12 60 0 6 12 18 24 VDS - Drain-to-Source Voltage (V) 30 Capacitance For technical questions, contact: [email protected] www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product Si4491EDY Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 10 1.60 ID = 13A RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) ID = 17.3 A 8 VDS = 15 V 6 VDS = 7.5 V 4 VDS = 24 V 2 0 30 60 90 1.35 VGS = 4.5 V 1.10 0.85 0.60 - 50 0 120 VGS = 10 V Qg - Total Gate Charge (nC) - 25 0 25 50 75 100 TJ - Junction Temperature (°C) 125 Gate Charge On-Resistance vs. Junction Temperature 150 0.020 100 RDS(on) - On-Resistance (Ω) IS - Source Current (A) ID = 13 A 10 TJ = 150 °C 1 0.015 0.010 TJ = 125 °C TJ = 25 °C 0.005 TJ = 25 °C 0.1 0.0 0.000 0.2 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) 2 1.2 Source-Drain Diode Forward Voltage 4 6 8 VGS - Gate-to-Source Voltage (V) 10 On-Resistance vs. Gate-to-Source Voltage 2.5 50 ID = 250 μA 40 Power (W) VGS(th) (V) 2.15 1.8 30 20 1.45 10 1.1 - 50 - 25 0 25 50 75 100 TJ - Temperature (°C) Threshold Voltage www.vishay.com 4 125 150 0 0.01 0.1 1 10 100 600 Time (s) Single Pulse Power, Junction-to-Ambient For technical questions, contact: [email protected] Document Number: 63866 S12-2337-Rev. B, 01-Oct-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product Si4491EDY Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 30 100 μs Limited by RDS(on)* 1 ms 24 10 ms 1 100 ms 1s 0.1 DC, 10 s ID - Drain Current (A) ID - Drain Current (A) 10 0.01 18 12 6 TA = 25 °C Single Pulse BVDSS Limited 0.001 0 0.1 1 10 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified 100 0 25 125 150 50 75 100 125 TA - Ambient Temperature (°C) 150 Current Derating* Safe Operating Area, Junction-to-Ambient 8.8 1.8 6.6 1.4 Power (W) Power (W) 50 75 100 TC - Case Temperature (°C) 4.4 2.2 0.9 0.5 0 0.0 0 25 50 75 100 TC - Case Temperature (°C) Power Junction-to-Foot 125 150 0 25 Power Junction-to-Ambient * The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 63866 S12-2337-Rev. B, 01-Oct-12 For technical questions, contact: [email protected] www.vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product Si4491EDY Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 90 °C/W 3. T JM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10-4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?63866. www.vishay.com 6 For technical questions, contact: [email protected] Document Number: 63866 S12-2337-Rev. B, 01-Oct-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 8 6 7 5 E 1 3 2 H 4 S h x 45 D C 0.25 mm (Gage Plane) A e B All Leads q A1 L 0.004" MILLIMETERS INCHES DIM Min Max Min Max A 1.35 1.75 0.053 0.069 A1 0.10 0.20 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 e 0.101 mm 1.27 BSC 0.157 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0° 8° 0° 8° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 Document Number: 71192 11-Sep-06 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-8 0.172 (4.369) 0.028 0.022 0.050 (0.559) (1.270) 0.152 (3.861) 0.047 (1.194) 0.246 (6.248) (0.711) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index www.vishay.com 22 Document Number: 72606 Revision: 21-Jan-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000