Si4491EDY Datasheet

New Product
Si4491EDY
Vishay Siliconix
P-Channel 30 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
ID a
RDS(on) () Max.
0.0065 at VGS = - 10 V
- 29
0.0082 at VGS = - 6 V
- 23
0.0112 at VGS = - 4.5 V
- 20
- 30
• Extended VGS range (± 25 V) for adaptor switch
applications
• Extremely low RDS(on)
• TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested
• Typical ESD Performance: 4000 V (HBM)
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
Qg (Typ.)
66 nC
SO-8
S
1
8
D
S
2
7
D
S
3
6
D
G
4
5
D
APPLICATIONS
S
• Adaptor Switch, Load Switch
• Power Management
• Notebook Computers and Portable
Battery Packs
G
Top View
Ordering Information:
Si4491EDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Drain-Source Voltage
Parameter
Symbol
VDS
Limit
- 30
Gate-Source Voltage
VGS
± 25
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
- 20.7
ID
TA = 25 °C
- 17.3
- 13.9b, c
- 60
TA = 70 °C
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
IDM
TC = 25 °C
IAS
- 2.6b, c
- 40
EAS
80
TC = 25 °C
Maximum Power Dissipation
mJ
6.9
TC = 70 °C
4.4
PD
TA = 25 °C
W
3.1b, c
2b, c
- 55 to 150
TA = 70 °C
Operating Junction and Storage Temperature Range
A
- 5.8b, c
IS
TA = 25 °C
L = 0.1 mH
V
- 25.8
TC = 70 °C
Pulsed Drain Current (t = 300 µs)
Continuous Source-Drain Diode Current
Unit
TJ, Tstg
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum
Junction-to-Ambientb, d
Maximum Junction-to-Foot (Drain)
Symbol
Typical
Maximum
t  10 s
RthJA
33
40
Steady State
RthJF
15
17
Unit
°C/W
Notes:
a. Based on TC = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under steady state conditions is 90 °C/W.
Document Number: 63866
S12-2337-Rev. B, 01-Oct-12
For technical questions, contact: [email protected]
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1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
Si4491EDY
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = - 250 µA
- 30
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS/TJ
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
VGS(th)/TJ
Gate-Source Threshold Voltage
VGS(th)
IGSS
Gate-Source Leakage
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
RDS(on)
Forward Transconductancea
gfs
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
ID = - 250 µA
VDS = VGS , ID = - 250 µA
tr
td(off)
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
VDS = 0 V, VGS = ± 20 V
± 15
VDS = - 30 V, VGS = 0 V
-1
VDS = - 30 V, VGS = 0 V, TJ = 55 °C
VDS - 5 V, VGS = - 10 V
V
µA
- 10
- 20
A
VGS - 10 V, ID = - 13 A
0.0054
0.0065
VGS - 6 V, ID = - 10 A
0.0068
0.0082
VGS - 4.5 V, ID = - 8 A
0.0093
0.0112
VDS = - 15 V, ID = - 13 A
44

S
4620
VDS = - 15 V, VGS = 0 V, f = 1 MHz
880
pF
820
VDS = - 15 V, VGS = - 10 V, ID = - 17.3 A
102
153
66
80
VDS = - 15 V, VGS = - 5 V, ID = - 17.3 A
16
nC
28
f = 1 MHz
VDD = 0 V, RL = 1.5 
ID  - 10 A, VGEN = - 4.5 V, Rg = 1 
0.3
1.3
2.6
70
105
70
105
45
68
41
td(on)
18
30
VDD = - 15 V, RL = 1.5 
ID  - 10 A, VGEN = - 10 V, Rg = 1 
tf
Fall Time
- 2.8
± 150
27
td(off)
Turn-Off Delay Time
- 1.2
tf
tr
Rise Time
mV/°C
6
VDS = 0 V, VGS = ± 25 V
td(on)
Turn-On Delay Time
Rise Time
V
- 24
15
25
52
80
14
25

ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
TC = 25 °C
- 5.8
- 60
IS = - 10 A, VGS = 0 V
IF = - 10 A, dI/dt = 100 A/µs, TJ = 25 °C
A
- 0.78
- 1.2
V
35
53
ns
25
38
nC
19
16
ns
Notes:
a. Pulse test; pulse width  300 µs, duty cycle  2 %
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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For technical questions, contact: [email protected]
Document Number: 63866
S12-2337-Rev. B, 01-Oct-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
Si4491EDY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
10-02
0.015
TJ = 25 °C
10-03
IGSS - Gate Current (A)
IGSS - Gate Current (mA)
0.012
0.009
0.006
10-04
TJ = 150 °C
10-05
10-06
TJ = 25 °C
10-07
0.003
10-08
10-09
0.000
0
6
12
18
24
30
0
6
VGS - Gate-Source Voltage (V)
12
18
24
30
36
VGS - Gate-to-Source Voltage (V)
Gate Current vs. Gate-Source Voltage
Gate Current vs. Gate-Source Voltage
10
60
VGS = 10 V thru 5 V
VGS = 4 V
8
ID - Drain Current (A)
ID - Drain Current (A)
45
30
6
4
TC = 25 °C
15
2
TC = 125 °C
VGS = 3 V
TC = - 55 °C
0
0
0
0.5
1
1.5
2
VDS - Drain-to-Source Voltage (V)
0
1
2
3
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
4
7200
0.014
0.011
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
6000
VGS = 4.5 V
0.008
VGS = 6 V
0.005
VGS = 10 V
Ciss
4800
3600
2400
Coss
Crss
1200
0
0.002
0
15
30
ID - Drain Current (A)
45
On-Resistance vs. Drain Current
Document Number: 63866
S12-2337-Rev. B, 01-Oct-12
60
0
6
12
18
24
VDS - Drain-to-Source Voltage (V)
30
Capacitance
For technical questions, contact: [email protected]
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
Si4491EDY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
10
1.60
ID = 13A
RDS(on) - On-Resistance (Normalized)
VGS - Gate-to-Source Voltage (V)
ID = 17.3 A
8
VDS = 15 V
6
VDS = 7.5 V
4
VDS = 24 V
2
0
30
60
90
1.35
VGS = 4.5 V
1.10
0.85
0.60
- 50
0
120
VGS = 10 V
Qg - Total Gate Charge (nC)
- 25
0
25
50
75
100
TJ - Junction Temperature (°C)
125
Gate Charge
On-Resistance vs. Junction Temperature
150
0.020
100
RDS(on) - On-Resistance (Ω)
IS - Source Current (A)
ID = 13 A
10
TJ = 150 °C
1
0.015
0.010
TJ = 125 °C
TJ = 25 °C
0.005
TJ = 25 °C
0.1
0.0
0.000
0.2
0.4
0.6
0.8
1.0
VSD - Source-to-Drain Voltage (V)
2
1.2
Source-Drain Diode Forward Voltage
4
6
8
VGS - Gate-to-Source Voltage (V)
10
On-Resistance vs. Gate-to-Source Voltage
2.5
50
ID = 250 μA
40
Power (W)
VGS(th) (V)
2.15
1.8
30
20
1.45
10
1.1
- 50
- 25
0
25
50
75
100
TJ - Temperature (°C)
Threshold Voltage
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4
125
150
0
0.01
0.1
1
10
100
600
Time (s)
Single Pulse Power, Junction-to-Ambient
For technical questions, contact: [email protected]
Document Number: 63866
S12-2337-Rev. B, 01-Oct-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
Si4491EDY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
30
100 μs
Limited by RDS(on)*
1 ms
24
10 ms
1
100 ms
1s
0.1
DC, 10 s
ID - Drain Current (A)
ID - Drain Current (A)
10
0.01
18
12
6
TA = 25 °C
Single Pulse
BVDSS Limited
0.001
0
0.1
1
10
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
100
0
25
125
150
50
75
100
125
TA - Ambient Temperature (°C)
150
Current Derating*
Safe Operating Area, Junction-to-Ambient
8.8
1.8
6.6
1.4
Power (W)
Power (W)
50
75
100
TC - Case Temperature (°C)
4.4
2.2
0.9
0.5
0
0.0
0
25
50
75
100
TC - Case Temperature (°C)
Power Junction-to-Foot
125
150
0
25
Power Junction-to-Ambient
* The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 63866
S12-2337-Rev. B, 01-Oct-12
For technical questions, contact: [email protected]
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
Si4491EDY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = R thJA = 90 °C/W
3. T JM - TA = PDMZthJA(t)
4. Surface Mounted
Single Pulse
0.01
10-4
10 -3
10 -2
10 -1
1
Square Wave Pulse Duration (s)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
Square Wave Pulse Duration (s)
1
10
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?63866.
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For technical questions, contact: [email protected]
Document Number: 63866
S12-2337-Rev. B, 01-Oct-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
Vishay Siliconix
SOIC (NARROW): 8-LEAD
JEDEC Part Number: MS-012
8
6
7
5
E
1
3
2
H
4
S
h x 45
D
C
0.25 mm (Gage Plane)
A
e
B
All Leads
q
A1
L
0.004"
MILLIMETERS
INCHES
DIM
Min
Max
Min
Max
A
1.35
1.75
0.053
0.069
A1
0.10
0.20
0.004
0.008
B
0.35
0.51
0.014
0.020
C
0.19
0.25
0.0075
0.010
D
4.80
5.00
0.189
0.196
E
3.80
4.00
0.150
e
0.101 mm
1.27 BSC
0.157
0.050 BSC
H
5.80
6.20
0.228
0.244
h
0.25
0.50
0.010
0.020
L
0.50
0.93
0.020
0.037
q
0°
8°
0°
8°
S
0.44
0.64
0.018
0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
Document Number: 71192
11-Sep-06
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Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR SO-8
0.172
(4.369)
0.028
0.022
0.050
(0.559)
(1.270)
0.152
(3.861)
0.047
(1.194)
0.246
(6.248)
(0.711)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
APPLICATION NOTE
Return to Index
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Document Number: 72606
Revision: 21-Jan-08
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definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
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requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
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Revision: 02-Oct-12
1
Document Number: 91000