New Product Si4190ADY Vishay Siliconix N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () Max. ID (A)a 0.0088 at VGS = 10 V 18.4 100 0.0094 at VGS = 7.5 V 17.8 0.0120 at VGS = 4.5 V 15.8 • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 Qg (Typ.) 20.7 nC APPLICATIONS SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D D • DC/DC Primary Side Switch • Telecom/Server • Industrial G Top View S Ordering Information: Si4190ADY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage VDS 100 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C 18.4 TC = 70 °C 14.6 ID TA = 25 °C 10.3b, c IDM Continuous Source-Drain Diode Current Single Pulse Avalanche Current Avalanche Energy Maximum Power Dissipation TC = 25 °C 5.4 2.7b, c IAS 30 EAS 45 TC = 25 °C 6 TC = 70 °C 3.8 PD TA = 25 °C mJ W 3b, c 1.9b, c TA = 70 °C Operating Junction and Storage Temperature Range A 70 IS TA = 25 °C L = 0.1 mH V 13b, c TA = 70 °C Pulsed Drain Current (t = 300 µs) Unit TJ, Tstg °C - 55 to 150 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d t 10 s Maximum Junction-to-Foot (Drain) Steady State Notes: a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under steady state conditions is 85 °C/W. Document Number: 63826 S12-0541-Rev. A, 12-Mar-12 Symbol Typical Maximum RthJA 33 42 RthJF 16 21 For technical support, please contact: [email protected] Unit °C/W www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product Si4190ADY Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 250 µA 100 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS/TJ VDS Temperature Coefficient VGS(th) Temperature Coefficient VGS(th)/TJ Gate-Source Threshold Voltage V 64 ID = 250 µA mV/°C - 5.8 VGS(th) VDS = VGS , ID = 250 µA 2.8 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 100 V, VGS = 0 V 1 VDS = 100 V, VGS = 0 V, TJ = 55 °C 10 On-State Drain Currenta ID(on) VDS 5 V, VGS = 10 V VGS 10 V, ID = 15 A 0.0073 0.0088 RDS(on) VGS 7.5 V, ID = 12 A 0.0078 0.0094 VGS 4.5 V, ID = 10 A 0.0096 0.0120 VDS = 15 V, ID = 15 A 54 Drain-Source On-State Resistancea Forward Transconductancea gfs 1.5 30 µA A S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 1970 VDS = 50 V, VGS = 0 V, f = 1 MHz 695 VDS = 50 V, VGS = 10 V, ID = 10 A 44.4 67 20.7 31 62 Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Output Charge Qoss VDS = 50 V, VGS = 0 V Rg f = 1 MHz Gate Resistance 6.1 VDS = 50 V, VGS = 4.5 V, ID = 10 A tr Rise Time td(off) Turn-Off Delay Time Fall Time Turn-On Delay Time 0.4 15 30 11 22 31 60 20 td(on) 12 24 10 20 VDD = 50 V, RL = 5 ID 10 A, VGEN = 10 V, Rg = 1 tf Fall Time 85 2.2 10 td(off) Turn-Off Delay Time VDD = 50 V, RL = 5 ID 10 A, VGEN = 7.5 V, Rg = 1 56 1.1 tf tr Rise Time nC 9.1 td(on) Turn-On Delay Time pF 34 65 10 20 ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Currenta IS TC = 25 °C 5.4 ISM VSD 70 IS = 5 A A 0.76 1.1 Body Diode Reverse Recovery Time trr 42 80 ns Body Diode Reverse Recovery Charge Qrr 40 80 nC Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb Body Diode Voltage IF = 10 A, di/dt = 100 A/µs, TJ = 25 °C 19 23 V ns Notes: a. Pulse test; pulse width 300 µs, duty cycle 2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 For technical support, please contact: [email protected] Document Number: 63826 S12-0541-Rev. A, 12-Mar-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product Si4190ADY Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 70 10 VGS = 10 V thru 4 V 8 ID - Drain Current (A) ID - Drain Current (A) 56 42 28 14 TC = 25 °C 4 TC = 125 °C 2 VGS = 3 V 0 0.0 6 TC = - 55 °C VGS = 2 V 1.0 2.0 3.0 4.0 0 0.0 5.0 1.0 2.0 3.0 4.0 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Transfer Characteristics 0.012 3000 0.011 2400 Ciss C - Capacitance (pF) RDS(on) - On-Resistance (Ω) Output Characteristics VGS = 4.5 V 0.010 0.009 VGS = 7.5 V 0.008 1800 Coss 1200 600 0.007 Crss VGS = 10 V 0.006 0 20 40 60 ID - Drain Current (A) 80 0 100 0 20 40 60 80 100 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 2.0 10 8 RDS(on) - On-Resistance (Normalized) ID = 10 A VGS - Gate-to-Source Voltage (V) 5.0 VDS = 50 V 6 VDS = 25 V VDS = 75 V 4 2 0 0 10 20 30 40 Qg - Total Gate Charge (nC) Gate Charge Document Number: 63826 S12-0541-Rev. A, 12-Mar-12 50 VGS = 10 V ID = 10 A 1.7 1.4 VGS = 4.5 V 1.1 0.8 0.5 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature For technical support, please contact: [email protected] www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product Si4190ADY Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 0.04 100 TJ = 25 °C 1 0.1 0.02 TJ = 125 °C 0.02 TJ = 25 °C 0.01 0.01 0.001 0.0 ID = 15 A 0.03 TJ = 150 °C RDS(on) - On-Resistance (Ω) IS - Source Current (A) 10 0.00 0.2 0.4 0.6 0.8 1.0 0 1.2 2 4 6 8 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 200 0.4 0.2 160 0 Power (W) VGS(th) Variance (V) 10 - 0.2 ID = 5 mA 120 80 - 0.4 - 0.8 - 50 40 ID = 250 μA - 0.6 - 25 0 25 50 75 100 TJ - Temperature (°C) 125 150 Threshold Voltage 0 0.001 0.01 0.1 Time (s) 1 10 Single Pulse Power, Junction-to-Ambient 100 IDM Limited ID Limited 100 μs ID - Drain Current (A) 10 1 ms 1 10 ms Limited by RDS(on)* 100 ms 0.1 1s TA = 25 °C Single Pulse 0.01 0.01 10 s BVDSS Limited 0.1 1 10 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified DC 100 Safe Operating Area, Junction-to-Ambient www.vishay.com 4 For technical support, please contact: [email protected] Document Number: 63826 S12-0541-Rev. A, 12-Mar-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product Si4190ADY Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 20 ID - Drain Current (A) 16 12 8 4 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) 7.5 2.0 6.0 1.6 4.5 1.2 Power (W) Power (W) Current Derating* 3.0 1.5 0.0 0.8 0.4 0 25 50 75 100 125 150 0.0 0 25 50 75 100 125 TC - Case Temperature (°C) TA - Ambient Temperature (°C) Power, Junction-to-Foot Power, Junction-to-Ambient 150 * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 63826 S12-0541-Rev. A, 12-Mar-12 For technical support, please contact: [email protected] www.vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product Si4190ADY Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 85 °C/W 0.02 3. T JM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 0.0001 0.001 0.01 0.1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.01 0.0001 0.05 0.02 Single Pulse 0.001 0.01 0.1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?63826. www.vishay.com 6 For technical support, please contact: [email protected] Document Number: 63826 S12-0541-Rev. A, 12-Mar-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 8 6 7 5 E 1 3 2 H 4 S h x 45 D C 0.25 mm (Gage Plane) A e B All Leads q A1 L 0.004" MILLIMETERS INCHES DIM Min Max Min Max A 1.35 1.75 0.053 0.069 A1 0.10 0.20 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 e 0.101 mm 1.27 BSC 0.157 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0° 8° 0° 8° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 Document Number: 71192 11-Sep-06 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-8 0.172 (4.369) 0.028 0.022 0.050 (0.559) (1.270) 0.152 (3.861) 0.047 (1.194) 0.246 (6.248) (0.711) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index www.vishay.com 22 Document Number: 72606 Revision: 21-Jan-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000