Si4904DY Vishay Siliconix Dual N-Channel 40-V MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 RDS(on) (Ω) ID (A) 0.016 at VGS = 10 V 8 0.019 at VGS = 4.5 V 8 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET • 100 % Rg Tested • UIS Tested Qg (Typ.) 56 APPLICATIONS • CCFL Inverter SO-8 D1 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 D2 G1 G2 Top View Ordering Information: Si4904DY-T1-E3 (Lead (Pb)-free) Si4904DY-T1-GE3 (Lead (Pb)-free and Halogen-free) S1 S2 N-Channel MOSFET N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Symbol VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C ID Pulsed Drain Current (10 µs Pulse Width) Source-Drain Current Diode Current Pulsed Source-Drain Current Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation Limit 40 ± 16 8 8 IS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C PD Operating Junction and Storage Temperature Range A 1.6b, c 20 20 20 3.25 2.10 ISM IAS EAS L = 0.1 mH V 8b, c 6.5b, c 20 2.7 IDM TC = 25 °C TA = 25 °C Unit W 2.0b, c 1.25b, c - 55 to 150 TJ, Tstg °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d Maximum Junction-to-Foot (Drain) t ≤ 10 s Steady-State Symbol RthJA RthJF Typ. 45 29 Max. 62.5 38 Unit °C/W Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under steady state conditions is 120 °C/W. Document Number: 73793 S09-0540-Rev. C, 06-Apr-09 www.vishay.com 1 Si4904DY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. 40 Typ. Max. Unit Static VDS VGS = 0 V, ID = 250 µA ΔVDS/TJ ID = 250 µA 40 ΔVGS(th)/TJ ID = 250 µA - 4.8 Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient VGS(th) VDS = VGS, ID= 250 µA Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 16 V Zero Gate Voltage Drain Current IDSS On-State Drain Currentb ID(on) Gate Threshold Voltage Drain-Source On-State Resistanceb Forward Transconductanceb RDS(on) gfs V 0.8 mV/°C 2.0 V 100 nA VDS = 40 V, VGS = 0 V 1 VDS = 40 V, VGS = 0 V, TJ = 55 °C 10 VDS = 5 V, VGS = 10 V 20 µA A VGS = 10 V, ID = 5 A 0.013 0.016 VGS = 4.5 V, ID = 4 A 0.015 0.019 VDS = 15 V, ID = 5 A 23 Ω S a Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg 2390 N-Channel VDS = 20 V, VGS = 0 V, ID = 1 MHz 165 VDS = 20 V, VGS = 10 V, ID = 5 A N-Channel VDS = 20 V, VGS = 4.5 V, ID = 5 A f = 1 MHz td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time Fall Time Turn-On Delay Time 5.5 nC 9.7 2.6 4.0 15 23 20 30 85 10 15 td(on) 88 135 117 180 N-Channel VDD = 20 V, RL =4 Ω ID ≅ 5 A, VGEN = 4.5 V, Rg = 1 Ω tf Fall Time 85 40 tf td(off) Turn-Off Delay Time N-Channel VDD = 20 V, RL = 4 Ω ID ≅ 5 A, VGEN = 4.5 V, Rg = 1 Ω 56 26 56 tr Rise Time pF 270 62 95 19 30 ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Currenta Body Diode Voltage IS TC = 25 °C 2.7 ISM VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb 20 IS = 1.5 A N-Channel IF = 2 A, dI/dt = 100 A/µs, TJ = 25 °C A 0.69 1.2 62 95 ns 62 95 nC 26 36 V nS Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 73793 S09-0540-Rev. C, 06-Apr-09 Si4904DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1.2 20 1.0 I D – Drain Current (A) I D – Drain Current (A) VGS = 10 thru 3 V 16 12 8 0.8 0.6 TC = 125 °C 0.4 25 °C 4 0.2 2V - 55 °C 0 0.0 0.6 1.2 1.8 2.4 0.0 0.0 3.0 0.6 VDS – Drain-to-Source Voltage (V) 2.4 3.0 Transfer Characteristics 0.020 3500 0.018 2800 C – Capacitance (pF) R DS(on) – On-Resistance (m ) 1.8 VGS – Gate-to-Source Voltage (V) Output Characteristics 0.016 1.2 VGS = 4.5 V 0.014 Ciss 2100 1400 VGS = 10 V 0.012 700 Coss 0.010 Crss 0 0 4 8 12 16 20 0 8 ID – Drain Current (A) 16 32 40 VDS – Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 10 1.8 ID = 5 A ID = 5 A VGS = 10 V 8 VDS = 10 V 6 R DS(on) – On-Resistance (Normalized) V GS – Gate-to-Source Voltage (V) 24 VDS = 20 V 4 VDS = 30 V 2 0 0 12 24 36 Qg – Total Gate Charge (nC) Gate Charge Document Number: 73793 S09-0540-Rev. C, 06-Apr-09 48 60 1.5 VGS = 4.5 V 1.2 0.9 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ – Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 3 Si4904DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted I S – Source Current (A) 20 R DS(on) – Drain-to-Source On-Resistance ( ) 100 TJ = 150 °C 10 TJ = 25 °C 1 0.1 0.10 ID = 5 A 0.08 0.06 0.04 TA = 125 °C 0.02 TA = 25 °C 0.01 0.0 0 0.2 0.4 0.6 0.8 1.0 0 1.2 1 2 VSD – Source-to-Drain Voltage (V) 0.4 5 6 7 8 9 10 50 ID = 250 µA 0.2 40 ID = 5 mA Power (W) VGS(th) Variance (V) 4 On-Resistance vs. Gate-to-Source Voltage Source-Drain Diode Forward Voltage 0 3 VGS – Gate-to-Source Voltage (V) - 0.2 30 20 - 0.4 10 - 0.6 - 0.8 - 50 - 25 0 25 50 75 100 125 0 0.001 150 0.01 0.1 1 10 Time (s) TJ – Temperature (°C) Single Pulse Power, Junction-to-Ambient Threshold Voltage 100 Limited by R DS(on)* I D – Drain Current (A) 10 1 ms 1 10 ms 100 ms 0.1 1s 10 s DC TA = 25 °C Single Pulse 0.01 0.1 * VGS 1 10 100 VDS – Drain-to-Source Voltage (V) minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 73793 S09-0540-Rev. C, 06-Apr-09 Si4904DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 12 ID – Drain Current (A) 10 8 Package Limited 6 4 2 0 0 25 50 75 100 125 150 TC – Case Temperature (°C) 4.0 1.5 3.2 1.2 Power Dissipation (W) Power Dissipation (W) Current Derating* 2.4 1.6 0.8 0.9 0.6 0.3 0.0 0.0 0 25 50 75 100 125 TC – Case Temperature (°C) Power Derating, Junction-to-Foot 150 0 25 50 75 100 125 150 TA – Ambient Temperature (°C) Power Derating, Junction-to-Ambient * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 73793 S09-0540-Rev. C, 06-Apr-09 www.vishay.com 5 Si4904DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 120 °C/W 3. TJM – TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 1 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?73793. www.vishay.com 6 Document Number: 73793 S09-0540-Rev. C, 06-Apr-09 Package Information Vishay Siliconix SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 8 6 7 5 E 1 3 2 H 4 S h x 45 D C 0.25 mm (Gage Plane) A e B All Leads q A1 L 0.004" MILLIMETERS INCHES DIM Min Max Min Max A 1.35 1.75 0.053 0.069 A1 0.10 0.20 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 e 0.101 mm 1.27 BSC 0.157 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0° 8° 0° 8° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 Document Number: 71192 11-Sep-06 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-8 0.172 (4.369) 0.028 0.022 0.050 (0.559) (1.270) 0.152 (3.861) 0.047 (1.194) 0.246 (6.248) (0.711) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index www.vishay.com 22 Document Number: 72606 Revision: 21-Jan-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000