VISHAY SI4497DY-T1-GE3

New Product
Si4497DY
Vishay Siliconix
P-Channel 30 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
RDS(on) (Ω)
ID (A)d
0.0033 at VGS = - 10 V
- 36
0.0046 at VGS = - 4.5 V
- 29
VDS (V)
- 30
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % Rg Tested
• 100 % UIS Tested
• Compliant to RoHS Directive 2002/95/EC
Qg (Typ.)
90 nC
APPLICATIONS
• Adaptor Switch
• High Current Load Switch
• Notebook
SO-8
S
1
8
D
S
2
7
D
S
3
6
D
G
4
5
D
S
G
Top View
D
Ordering Information: Si4497DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Symbol
VDS
VGS
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
ID
TC = 25 °C
TA = 25 °C
IS
Avalanche Current
Single-Pulse Avalanche Energy
L = 0.1 mH
IAS
EAS
Maximum Power Dissipation
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
PD
- 2.9a, b
- 30
45
7.8
5.0
3.5a, b
2.2a, b
- 55 to 150
TJ, Tstg
Operating Junction and Storage Temperature Range
Unit
V
- 36
- 29
- 24.8a, b
- 19.2a, b
- 70
- 6.5
IDM
Pulsed Drain Current
Continuous Source-Drain Diode Current
Limit
- 30
± 20
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta, c
Maximum Junction-to-Foot
t ≤ 10 s
Steady State
Symbol
RthJA
RthJF
Typical
29
13
Maximum
35
16
Unit
°C/W
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. Maximum under Steady State conditions is 80 °C/W.
d. Based on TC = 25 °C.
Document Number: 65748
S10-0639-Rev. A, 22-Mar-10
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New Product
Si4497DY
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = - 250 µA
- 30
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
ΔVDS/TJ
VGS(th) Temperature Coefficient
ΔVGS(th)/TJ
ID = - 250 µA
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = - 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
Forward Transconductancea
gfs
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
mV/°C
5.5
- 1.0
- 2.5
V
± 100
nA
VDS = - 30 V, VGS = 0 V
-1
VDS = - 30 V, VGS = 0 V, TJ = 55 °C
-5
VDS ≥ - 10 V, VGS = - 10 V
VGS = - 10 V, ID = - 20 A
RDS(on)
V
- 26
- 30
µA
A
0.0027
0.0033
VGS = - 4.5 V, ID = - 15 A
0.0038
0.0046
VDS = - 10 V, ID = - 20 A
75
Ω
S
9685
VDS = - 15 V, VGS = 0 V, f = 1 MHz
995
pF
995
VDS = - 15 V, VGS = - 10 V, ID = - 20 A
VDS = - 15 V, VGS = - 4.5 V, ID = - 20 A
190
285
90
135
27.5
nC
26.5
f = 1 MHz
td(on)
VDD = - 15 V, RL = 1.5 Ω
ID ≅ - 10 A, VGEN = - 10 V, Rg = 1 Ω
tr
td(off)
0.5
2.3
4.6
19
35
13
25
115
200
tf
25
50
td(on)
100
180
VDD = - 15 V, RL = 1.5 Ω
ID ≅ - 10 A, VGEN = - 4.5 V, Rg = 1 Ω
tr
td(off)
tf
75
150
100
180
42
80
Ω
ns
Drain-Source Body Diode Characteristics
Continous Source-Drain Diode Current
TC = 25 °C
IS
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
- 36
- 70
IS = - 3 A, VGS = 0 V
IF = - 10 A, dI/dt = 100 A/µs, TJ = 25 °C
A
- 0.70
- 1.2
V
31
60
ns
23
45
nC
13
18
ns
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 65748
S10-0639-Rev. A, 22-Mar-10
New Product
Si4497DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
10
70
V GS = 10 V thru 4 V
V GS = 3 V
8
I D - Drain Current (A)
I D - Drain Current (A)
56
42
28
6
4
T C = 25 °C
2
14
T C = 125 °C
0
0.0
T C = - 55 °C
0
0.5
1.0
1.5
2.0
0
2.5
1
2
3
4
5
V GS - Gate-to-Source Voltage (V)
V DS - Drain-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.0045
12 000
9600
V GS = 4.5 V
C - Capacitance (pF)
R DS(on) - On-Resistance (Ω)
Ciss
0.0040
0.0035
0.0030
V GS = 10 V
7200
4800
0.0025
2400
0.0020
0
Coss
Crss
0
16
32
48
64
80
0
12
18
24
ID - Drain Current (A)
V DS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
10
30
1.6
ID = 20 A
ID = 20 A
8
V GS = 10 V
V DS = 15 V
6
V DS = 10 V
V DS = 20 V
4
2
(Normalized)
1.4
R DS(on) - On-Resistance
VGS - Gate-to-Source Voltage (V)
6
1.2
V GS = 4.5 V
1.0
0.8
0
0
40
80
120
160
200
0.6
- 50
- 25
0
25
50
75
100
125
Qg - Total Gate Charge (nC)
T J - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 65748
S10-0639-Rev. A, 22-Mar-10
150
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New Product
Si4497DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.020
100
ID = 20 A
1
R DS(on) - On-Resistance (Ω)
I S - Source Current (A)
10
T J = 150 °C
T J = 25 °C
0.1
0.016
0.012
0.008
T J = 125 °C
0.004
0.01
T J = 25 °C
0.001
0.0
0.000
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
V SD - Source-to-Drain Voltage (V)
V GS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
10
200
0.8
160
ID = 250 μA
Power (W)
VGS(th) Variance (V)
0.5
ID = 5 mA
0.2
120
80
- 0.1
40
- 0.4
- 50
- 25
0
25
50
75
100
125
0
0.001
150
0.01
0.1
1
10
Time (s)
T J - Temperature (°C)
Single Pulse Power, Junction-to-Ambient
Threshold Voltage
100
Limited by R DS(on)*
1 ms
I D - Drain Current (A)
10
10 ms
1
100 ms
1s
10 s
0.1
DC
TA = 25 °C
Single Pulse
0.01
0.01
0.1
BVDSS Limited
1
10
100
V DS - Drain-to-Source Voltage (V)
* V GS > minimum VGS at which RDS(on) is specified
Safe Operating Area
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Document Number: 65748
S10-0639-Rev. A, 22-Mar-10
New Product
Si4497DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
40
I D - Drain Current (A)
32
24
16
8
0
0
25
50
75
100
125
150
T C - Case Temperature (°C)
10
2.0
8
1.6
6
1.2
Power (W)
Power (W)
Current Derating*
4
2
0.8
0.4
0
0.0
0
25
50
75
100
125
T C - Case Temperature (°C)
Power Derating, Junction-to-Foot
150
0
25
50
75
100
125
150
TA - Ambient Temperature (°C)
Power Derating, Junction-to-Ambient
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 65748
S10-0639-Rev. A, 22-Mar-10
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New Product
Si4497DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
PDM
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 80 °C/W
0.02
3. T JM - TA = PDMZthJA(t)
4. Surface Mounted
Single Pulse
0.01
10 -3
10 -2
10 -1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
10 -4
Single Pulse
10 -3
10 -2
10 -1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?65748.
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Document Number: 65748
S10-0639-Rev. A, 22-Mar-10
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
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information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
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document or by any conduct of Vishay.
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Document Number: 91000
Revision: 18-Jul-08
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