New Product Si4497DY Vishay Siliconix P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.0033 at VGS = - 10 V - 36 0.0046 at VGS = - 4.5 V - 29 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • 100 % UIS Tested • Compliant to RoHS Directive 2002/95/EC Qg (Typ.) 90 nC APPLICATIONS • Adaptor Switch • High Current Load Switch • Notebook SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D S G Top View D Ordering Information: Si4497DY-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Symbol VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C ID TC = 25 °C TA = 25 °C IS Avalanche Current Single-Pulse Avalanche Energy L = 0.1 mH IAS EAS Maximum Power Dissipation TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C PD - 2.9a, b - 30 45 7.8 5.0 3.5a, b 2.2a, b - 55 to 150 TJ, Tstg Operating Junction and Storage Temperature Range Unit V - 36 - 29 - 24.8a, b - 19.2a, b - 70 - 6.5 IDM Pulsed Drain Current Continuous Source-Drain Diode Current Limit - 30 ± 20 A mJ W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta, c Maximum Junction-to-Foot t ≤ 10 s Steady State Symbol RthJA RthJF Typical 29 13 Maximum 35 16 Unit °C/W Notes: a. Surface mounted on 1" x 1" FR4 board. b. t = 10 s. c. Maximum under Steady State conditions is 80 °C/W. d. Based on TC = 25 °C. Document Number: 65748 S10-0639-Rev. A, 22-Mar-10 www.vishay.com 1 New Product Si4497DY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = - 250 µA - 30 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS/TJ VGS(th) Temperature Coefficient ΔVGS(th)/TJ ID = - 250 µA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea gfs Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time mV/°C 5.5 - 1.0 - 2.5 V ± 100 nA VDS = - 30 V, VGS = 0 V -1 VDS = - 30 V, VGS = 0 V, TJ = 55 °C -5 VDS ≥ - 10 V, VGS = - 10 V VGS = - 10 V, ID = - 20 A RDS(on) V - 26 - 30 µA A 0.0027 0.0033 VGS = - 4.5 V, ID = - 15 A 0.0038 0.0046 VDS = - 10 V, ID = - 20 A 75 Ω S 9685 VDS = - 15 V, VGS = 0 V, f = 1 MHz 995 pF 995 VDS = - 15 V, VGS = - 10 V, ID = - 20 A VDS = - 15 V, VGS = - 4.5 V, ID = - 20 A 190 285 90 135 27.5 nC 26.5 f = 1 MHz td(on) VDD = - 15 V, RL = 1.5 Ω ID ≅ - 10 A, VGEN = - 10 V, Rg = 1 Ω tr td(off) 0.5 2.3 4.6 19 35 13 25 115 200 tf 25 50 td(on) 100 180 VDD = - 15 V, RL = 1.5 Ω ID ≅ - 10 A, VGEN = - 4.5 V, Rg = 1 Ω tr td(off) tf 75 150 100 180 42 80 Ω ns Drain-Source Body Diode Characteristics Continous Source-Drain Diode Current TC = 25 °C IS Pulse Diode Forward Current ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb - 36 - 70 IS = - 3 A, VGS = 0 V IF = - 10 A, dI/dt = 100 A/µs, TJ = 25 °C A - 0.70 - 1.2 V 31 60 ns 23 45 nC 13 18 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 65748 S10-0639-Rev. A, 22-Mar-10 New Product Si4497DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 10 70 V GS = 10 V thru 4 V V GS = 3 V 8 I D - Drain Current (A) I D - Drain Current (A) 56 42 28 6 4 T C = 25 °C 2 14 T C = 125 °C 0 0.0 T C = - 55 °C 0 0.5 1.0 1.5 2.0 0 2.5 1 2 3 4 5 V GS - Gate-to-Source Voltage (V) V DS - Drain-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.0045 12 000 9600 V GS = 4.5 V C - Capacitance (pF) R DS(on) - On-Resistance (Ω) Ciss 0.0040 0.0035 0.0030 V GS = 10 V 7200 4800 0.0025 2400 0.0020 0 Coss Crss 0 16 32 48 64 80 0 12 18 24 ID - Drain Current (A) V DS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 10 30 1.6 ID = 20 A ID = 20 A 8 V GS = 10 V V DS = 15 V 6 V DS = 10 V V DS = 20 V 4 2 (Normalized) 1.4 R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 6 1.2 V GS = 4.5 V 1.0 0.8 0 0 40 80 120 160 200 0.6 - 50 - 25 0 25 50 75 100 125 Qg - Total Gate Charge (nC) T J - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature Document Number: 65748 S10-0639-Rev. A, 22-Mar-10 150 www.vishay.com 3 New Product Si4497DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.020 100 ID = 20 A 1 R DS(on) - On-Resistance (Ω) I S - Source Current (A) 10 T J = 150 °C T J = 25 °C 0.1 0.016 0.012 0.008 T J = 125 °C 0.004 0.01 T J = 25 °C 0.001 0.0 0.000 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 V SD - Source-to-Drain Voltage (V) V GS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 10 200 0.8 160 ID = 250 μA Power (W) VGS(th) Variance (V) 0.5 ID = 5 mA 0.2 120 80 - 0.1 40 - 0.4 - 50 - 25 0 25 50 75 100 125 0 0.001 150 0.01 0.1 1 10 Time (s) T J - Temperature (°C) Single Pulse Power, Junction-to-Ambient Threshold Voltage 100 Limited by R DS(on)* 1 ms I D - Drain Current (A) 10 10 ms 1 100 ms 1s 10 s 0.1 DC TA = 25 °C Single Pulse 0.01 0.01 0.1 BVDSS Limited 1 10 100 V DS - Drain-to-Source Voltage (V) * V GS > minimum VGS at which RDS(on) is specified Safe Operating Area www.vishay.com 4 Document Number: 65748 S10-0639-Rev. A, 22-Mar-10 New Product Si4497DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 40 I D - Drain Current (A) 32 24 16 8 0 0 25 50 75 100 125 150 T C - Case Temperature (°C) 10 2.0 8 1.6 6 1.2 Power (W) Power (W) Current Derating* 4 2 0.8 0.4 0 0.0 0 25 50 75 100 125 T C - Case Temperature (°C) Power Derating, Junction-to-Foot 150 0 25 50 75 100 125 150 TA - Ambient Temperature (°C) Power Derating, Junction-to-Ambient * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 65748 S10-0639-Rev. A, 22-Mar-10 www.vishay.com 5 New Product Si4497DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 80 °C/W 0.02 3. T JM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10 -3 10 -2 10 -1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 10 -4 Single Pulse 10 -3 10 -2 10 -1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?65748. www.vishay.com 6 Document Number: 65748 S10-0639-Rev. A, 22-Mar-10 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1