Si4455DY Vishay Siliconix P-Channel 150-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 150 • TrenchFET® Power MOSFET RDS(on) () ID (A) 0.295 at VGS = - 10 V - 8.9c 0.315 at VGS = - 6 V 8.6c - Qg (Typ.) • 100% Rg and UIS Tested • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 23.2 nC SO-8 Available APPLICATIONS S 1 8 D S 2 7 D S 3 6 D G 4 5 D • Active Clamp in Intermediate DC/ S DC Power Supplies • H-Bridge High Side Switch for Lighting Application G Top View D Ordering Information: Si4455DY-T1-E3 (Lead (Pb)-free) Si4455DY-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Symbol VDS VGS Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Limit - 150 ± 20 - 2.8 - 2.3 ID IDM Pulsed Drain Current Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS Avalanche Current Single-Pulse Avalanche Energy L = 0.1 mH IAS EAS Maximum Power Dissipation TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C PD V - 2a, b - 1.6a, b - 15 - 4.9 A - 2.5a, b - 15 11.25 5.9 3.8 mJ 3.1a, b 2a, b - 55 to 150 TJ, Tstg Operating Junction and Storage Temperature Range Unit W °C Notes: a. Surface mounted on 1" x 1" FR4 board. b. t = 10 s. c. Based on TC = 25 °C. THERMAL RESISTANCE RATINGS Parameter t 10 s Steady State Maximum Junction-to-Ambienta, b Maximum Junction-to-Foot (Drain) Symbol RthJA RthJF Typical 33 17 Maximum 40 21 Unit °C/W Notes: a. Surface mounted on 1" x 1" FR4 board. b. Maximum under steady state conditions is 80 °C/W. Document Number: 68631 S13-1371-Rev. C, 24-Jun-13 For technical questions, contact: [email protected] www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si4455DY Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = - 250 µA - 150 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VDS/TJ VGS(th) Temperature Coefficient VGS(th)/TJ ID = - 250 µA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea RDS(on) Forward Transconductancea Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg gfs tr Rise Time td(off) Turn-Off DelayTime Fall Time Turn-On Delay Time V nA VDS = - 150 V, VGS = 0 V -1 - 10 VDS - 5 V, VGS = - 10 V VGS = - 10 V, ID = - 4 A -8 µA A 0.245 0.295 VGS = - 6 V, ID = - 3 A 0.260 0.315 VDS = - 15 V, ID = 4 A 12 S 1190 VDS = - 50 V, VGS = 0 V, f = 1 MHz 61 pF 42 VDS = - 75 V, VGS = - 10 V, ID = - 3 A 27.5 42 23.2 35 VDS = - 75 V, VGS = - 6 V, ID = - 3 A 5.4 f = 1 MHz 6.1 9.2 20 30 95 145 38 60 nC 8.4 VDD = - 75 V, RL = 25 ID - 3 A, VGEN = - 6 V, Rg = 1 51 td(on) 11 18 VDD = - 75 V, RL = 25 ID - 3 A, VGEN = - 10 V, Rg = 1 tf Fall Time -4 ± 100 34 td(off) Turn-Off DelayTime -2 tf tr Rise Time mV/°C - 6.6 VDS = - 150 V, VGS = 0 V, TJ = 55 °C td(on) Turn-On Delay Time V - 165 28 42 52 78 35 53 ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current a IS TC = 25 °C - 13 ISM Pulse Diode Forward Current Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb - 15 IS = - 3 A IF = - 4 A, dI/dt = 100 A/µs, TJ = 25 °C A - 0.8 - 1.2 V 65 90 ns 180 270 nC 45 20 ns Notes: a. Pulse test; pulse width 300 µs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 For technical questions, contact: [email protected] Document Number: 68631 S13-1371-Rev. C, 24-Jun-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si4455DY Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 20 2.0 VGS = 10 V thru 6 V VGS = 5 V 1.6 ID - Drain Current (A) ID - Drain Current (A) 16 12 8 4 1.2 0.8 TC = 125 °C 0.4 VGS = 4 V TC = 25 TC = - 55 °C 0 0.0 0 2 4 6 8 10 0 1 VDS - Drain-to-Source Voltage (V) 3 4 5 6 Transfer Characteristics 0.6 1700 0.5 1360 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) Output Characteristics 0.4 VGS = 6 V 0.3 2 VGS - Gate-to-Source Voltage (V) VGS = 10 V Ciss 1020 680 0.2 340 Coss 0.1 Crss 0 0 4 8 12 16 20 0 20 ID - DrainCurrent (A) 40 80 100 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 2.2 10 RDS(on) - On-Resistance (Normalized) VDS = 50 V ID = 3 A VGS - Gate-to-Source Voltage (V) 60 8 VDS = 75 V 6 VDS = 100 V 4 2 0 0 6 12 18 Qg - TotalGateCharge(nC) Gate Charge Document Number: 68631 S13-1371-Rev. C, 24-Jun-13 24 30 ID = 4 A 1.9 VGS = 10 V 1.6 1.3 VGS = 6 V 1.0 0.7 0.4 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature For technical questions, contact: [email protected] www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si4455DY Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 2.0 RDS(on) - On-Resistance (Ω) I S - Source Current (A) 100 10 TJ = 150 °C TJ = 25 °C 1 1.6 1.2 0.8 TJ = 125 °C 0.4 TJ = 25 °C 0.0 0.1 0.3 0.6 0.9 1.2 1.5 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-SourceVoltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 1.0 200 0.7 160 ID = 250 µA Power (W) V GS(th) Variance (V) 0.0 0.4 ID = 5 mA 0.1 - 0.2 - 0.5 - 50 120 80 40 0 - 25 0 25 50 75 100 125 150 0 .0 0 1 0.01 TJ - Temperature (°C) 0.1 1 10 Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient I D - Drain Current (A) 100 10 Limited by RDS(on)* 1 ms 1 10 ms 100 ms 0.1 1s 10 s TA = 25 °C Single Pulse 0.01 0.01 DC 0.1 1 10 100 1000 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 For technical questions, contact: [email protected] Document Number: 68631 S13-1371-Rev. C, 24-Jun-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si4455DY Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 4 ID - DrainCurrent (A) 3 2 1 0 0 25 50 75 100 125 150 0 25 TC - Case Temperature (°C) 8.0 2.0 6.4 1.6 Power (W) Power (W) Current Derating* 4.8 3.2 1.6 1.2 0.8 0.4 0.0 0.0 0 25 50 75 100 TC - Case Temperature (°C) Power, Junction-to-Foot 125 150 50 75 100 125 150 TA - Ambient Temperature (°C) Power, Junction-to-Ambient * The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 68631 S13-1371-Rev. C, 24-Jun-13 For technical questions, contact: [email protected] www.vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si4455DY Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 80 ° C/W 0.02 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 10-4 Single Pulse 10-3 10-2 10-1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?68631. www.vishay.com 6 For technical questions, contact: [email protected] Document Number: 68631 S13-1371-Rev. C, 24-Jun-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 8 6 7 5 E 1 3 2 H 4 S h x 45 D C 0.25 mm (Gage Plane) A e B All Leads q A1 L 0.004" MILLIMETERS INCHES DIM Min Max Min Max A 1.35 1.75 0.053 0.069 A1 0.10 0.20 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 e 0.101 mm 1.27 BSC 0.157 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0° 8° 0° 8° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 Document Number: 71192 11-Sep-06 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-8 0.172 (4.369) 0.028 0.022 0.050 (0.559) (1.270) 0.152 (3.861) 0.047 (1.194) 0.246 (6.248) (0.711) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index www.vishay.com 22 Document Number: 72606 Revision: 21-Jan-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000