SUP53P06-20 Vishay Siliconix P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 a RDS(on) () ID (A) 0.0195 at VGS = - 10 V - 53 0.0250 at VGS = - 4.5 V - 42 Qg (Typ.) 76 nC TO-220AB • TrenchFET® Power MOSFET • 100 % UIS Tested • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS S • Load Switch G DRAIN connected to TAB G D S D Top View P-Channel MOSFET Ordering Information: SUP53P06-20-E3 (Lead (Pb)-free) SUP53P06-20-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage VDS - 60 Gate-Source Voltage VGS ± 20 TC = 70 °C TA = 25 °C - 46.8 ID 9.2b Pulsed Drain Current IDM - 150 Avalanche Current Pulse IAS - 45 EAS 101 L = 0.1 mH Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C 69 IS TC = 70 °C TA = 25 °C A 104.2a 66.7a PD W 3.1b 2b TA = 70 °C TJ, Tstg Operating Junction and Storage Temperature Range mJ a 2.1b TC = 25 °C Maximum Power Dissipation A - 8.1b TA = 70 °C Single Pulse Avalanche Energy V - 53a TC = 25 °C Continuous Drain Current (TJ = 150 °C) Unit - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Maximum Steady State Symbol RthJA Typical Maximum Junction-to-Ambientb 33 40 Maximum Junction-to-Case Steady State RthJC 0.98 1.2 Unit °C/W Notes: a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. Document Number: 68633 S12-2440-Rev. B, 15-Oct-12 For technical questions, contact: [email protected] www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUP53P06-20 Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = - 250 µA - 60 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS/TJ VDS Temperature Coefficient V 68 ID = - 250 µA mV/°C VGS(th) Temperature Coefficient VGS(th)/TJ Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA -3 V IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA VDS = - 60 V, VGS = 0 V -1 VDS = - 60 V, VGS = 0 V, TJ = 55 °C - 10 Gate-Source Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea RDS(on) gfs VDS =-5 V, VGS = - 10 V - 5.2 -1 - 120 A VGS = - 10 V, ID = - 30 A 0.0160 0.0195 VGS = - 4.5 V, ID = - 20 A 0.0200 0.0250 VDS = - 15 V, ID = - 50 A µA 20 S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg 3500 VDS = - 25 V, VGS = 0 V, f = 1 MHz 290 VDS = - 30 V, VGS = - 10 V, ID = - 55 A 76 115 38 60 VDS = - 30 V, VGS = - 4.5 V, ID = - 55 A 16 tr Rise Time td(off) Turn-Off Delay Time f = 1 MHz VDD = - 2 V, RL = 2 ID - 10 A, VGEN = - 10 V, Rg = 1 tf Fall Time nC 19 td(on) Turn-On Delay Time pF 390 5.2 10 15 7 15 70 110 40 60 ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Currenta IS TC = 25 °C - 69 ISM VSD Body Diode Voltage Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb - 150 IS = - 30 A IF = - 50 A, di/dt = 100 A/µs, TJ = 25 °C A -1 - 1.5 V 45 68 ns 59 120 nC 29 16 ns Notes: a. Pulse test; pulse width 300 µs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 For technical questions, contact: [email protected] Document Number: 68633 S12-2440-Rev. B, 15-Oct-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUP53P06-20 Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 200 100 VGS = 10 thru 6 V 80 VGS = 5 V ID - Drain Current (A) ID - Drain Current (A) 160 120 80 VGS = 4 V 40 60 40 TC = 125 °C 20 TC = 25 °C VGS = 3 V TC = - 55 °C 0 0 0 1 2 3 4 VDS - Drain-to-SourceVoltage (V) 5 0 1 2 3 4 VGS - Gate-to-Source Voltage (V) Output Characteristics 5 Transfer Characteristics 10 100 8 80 gfs - Transconductance (S) ID - Drain Current (A) TC = - 55 °C 6 4 TC = 125 °C 2 TC = 25 °C 60 TC = 125 °C 40 20 TC = 25 °C TC = - 55 °C 0 0 0 1 2 3 4 0 5 12 24 36 ID - Drain Current (A) VGS - Gate-to-Source Voltage (V) 60 Transconductance 0.05 5000 0.04 4000 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) Transfer Characteristics 48 0.03 VGS = 4.5 V 0.02 Ciss 3000 2000 VGS = 10 V 0.01 1000 Coss 0.00 Crss 0 0 20 40 60 ID - Drain Current (A) 80 100 0 10 20 30 40 50 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Document Number: 68633 S12-2440-Rev. B, 15-Oct-12 For technical questions, contact: [email protected] 60 Capacitance www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUP53P06-20 Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 2.0 10 RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) ID = 55 A 8 VDS = 20 V 6 VDS = 30 V 4 2 20 40 60 Qg - Total Gate Charge (nC) 1.7 VGS = 10 V 1.4 VGS = 4.5 V 1.1 0.8 0.5 - 50 0 0 ID = 20 A 80 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Gate-to-Source Voltage 0.10 100 TJ = 150 °C RDS(on) - On-Resistance (Ω) IS - Source Current (A) ID = 20 A TJ = 25 °C 10 0.08 0.06 0.04 TJ = 150 °C 0.02 TJ = 25 °C 1 0.0 0.00 0.3 0.6 0.9 VSD - Source-to-Drain Voltage (V) 0 1.2 2 4 6 8 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage 10 On-Resistance vs. Gate-to-Source Voltage 1000 75 ID = 10 mA 72 V(BR)DSS - (V) I Dav - (A) 100 10 69 66 IAV (A) at TJ = 25 °C 1 63 IAV (A) at TJ = 150 °C 0.1 0.0001 0.001 0.01 T in - (s) 0.1 1 - 25 0 25 50 75 100 125 150 TJ - Temperature (°C) Single Pulse Avalanche Current Capability vs. Time www.vishay.com 4 60 - 50 Drain-Source Breakdown Voltage vs. Junction Temperature For technical questions, contact: [email protected] Document Number: 68633 S12-2440-Rev. B, 15-Oct-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUP53P06-20 Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 60 0.8 50 ID - Drain Current (A) V GS(th) Variance (V) 0.5 ID = 250 µA ID = 1 mA 0.2 40 30 20 - 0.1 10 0 - 0.4 - 50 - 25 0 25 50 75 100 TJ - Temperature(°C) 125 0 150 25 50 Threshold Voltage 100 125 150 Max. Drain Current vs. Case Temperature 140 1000 Limited by RDS(on)* 120 10 µs 100 I D - Drain Current (A) 100 Power (W) 75 TC - Case Temperature (°C) 80 60 40 100 µs 10 1 ms 10 ms 100 ms, DC 1 20 BVDSS Limited TC = 25 °C Single Pulse 0 0 25 50 75 100 125 0.1 0.1 150 TJ - Temperature (°C) 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Power Derating, Junction-to-Case Safe Operating Area, Junction-to-Case 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?68633. Document Number: 68633 S12-2440-Rev. B, 15-Oct-12 For technical questions, contact: [email protected] www.vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix TO-220AB MILLIMETERS A E F D H(1) Q ØP 3 2 L(1) 1 M* L b(1) INCHES DIM. MIN. MAX. MIN. MAX. A 4.25 4.65 0.167 0.183 b 0.69 1.01 0.027 0.040 b(1) 1.20 1.73 0.047 0.068 c 0.36 0.61 0.014 0.024 D 14.85 15.49 0.585 0.610 D2 12.19 12.70 0.480 0.500 E 10.04 10.51 0.395 0.414 e 2.41 2.67 0.095 0.105 e(1) 4.88 5.28 0.192 0.208 F 1.14 1.40 0.045 0.055 H(1) 6.09 6.48 0.240 0.255 0.115 J(1) 2.41 2.92 0.095 L 13.35 14.02 0.526 0.552 L(1) 3.32 3.82 0.131 0.150 ØP 3.54 3.94 0.139 0.155 Q 2.60 3.00 0.102 0.118 ECN: T14-0413-Rev. P, 16-Jun-14 DWG: 5471 Note * M = 1.32 mm to 1.62 mm (dimension including protrusion) Heatsink hole for HVM C b e J(1) e(1) D2 Document Number: 71195 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Revison: 16-Jun-14 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000