IRF730A, SiHF730A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Low Gate Charge Qg results in Simple Drive Requirement 400 RDS(on) (Ω) VGS = 10 V 1.0 Qg (Max.) (nC) 22 Qgs (nC) 5.8 Qgd (nC) 9.3 Configuration • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Available RoHS* COMPLIANT • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified Single • Compliant to RoHS Directive 2002/95/EC D APPLICATIONS TO-220AB • Switch Mode Power Supply (SMPS) • Uninterruptible Power Supply G G D • High Speed Power Switching TYPICAL SMPS TOPOLOGIES S S • Single Transistor Flyback Xfmr. Reset • Single Transistor Forward Xfmr. Reset (Both US Line Input Only) N-Channel MOSFET ORDERING INFORMATION Package TO-220AB IRF730APbF SiHF730A-E3 IRF730A SiHF730A Lead (Pb)-free SnPb ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT VDS VGS 400 ± 30 5.5 3.5 22 0.6 290 5.5 7.4 74 4.6 - 55 to + 150 300d 10 1.1 Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Mounting Torque VGS at 10 V TC = 25 °C TC = 100 °C ID IDM TC = 25 °C for 10 s 6-32 or M3 screw EAS IAR EAR PD dV/dt TJ, Tstg UNIT V A W/°C mJ A mJ W V/ns °C lbf · in N·m Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Starting TJ = 25 °C, L = 19 mH, Rg = 25 Ω, IAS = 5.5 A (see fig. 12). c. ISD ≤ 5.5 A, dI/dt ≤ 90 A/μs, VDD ≤ VDS, TJ ≤ 150 °C. d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91045 S11-0508-Rev. B, 21-Mar-11 www.vishay.com 1 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF730A, SiHF730A Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. Maximum Junction-to-Case (Drain) RthJC - 1.70 Case-to-Sink, Flat, Greased Surface RthCS 0.50 - Maximum Junction-to-Ambient RthJA - 62 UNIT °C/W SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. VDS TYP. MAX. UNIT Static VGS = 0 V, ID = 250 μA 400 - - V ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 0.5 - V/°C VGS(th) VDS = VGS, ID = 250 μA 2.0 - 4.5 V Gate-Source Leakage IGSS VGS = ± 30 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 400 V, VGS = 0 V - - 25 VDS = 320 V, VGS = 0 V, TJ = 125 °C - - 250 - - 1.0 Ω S Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage Drain-Source On-State Resistance Forward Transconductance RDS(on) ID = 3.3 Ab VGS = 10 V gfs VDS = 50 V, ID = 3.3 A 3.1 - - Input Capacitance Ciss VGS = 0 V, - 600 - Output Capacitance Coss VDS = 25 V, - 103 - Reverse Transfer Capacitance Crss f = 1.0 MHz, see fig. 5 μA Dynamic Output Capacitance Effective Output Capacitance Total Gate Charge Coss VDS = 1.0 V, f = 1.0 MHz VGS = 0 V Coss eff. 4.0 - 890 - VDS = 320 V, f = 1.0 MHz - 30 - VDS = 0 V to 320 Vc - 45 - - - 22 - - 5.8 Qg VGS = 10 V - ID = 3.5 A, VDS = 320 V pF Gate-Source Charge Qgs Gate-Drain Charge Qgd - - 9.3 Turn-On Delay Time td(on) - 10 - - 22 - - 20 - - 16 - - - 5.5 S - - 22 TJ = 25 °C, IS = 5.5 A, VGS = 0 Vb - - 1.6 V - 370 550 ns - 1.6 2.4 μC Rise Time Turn-Off Delay Time Fall Time tr td(off) see fig. 6 and 13b VDD = 200 V, ID = 3.5 A Rg = 12 Ω, RD = 57 Ω, see fig. 10b tf nC ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulsed Diode Forward Currenta ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Forward Turn-On Time ton MOSFET symbol showing the integral reverse p - n junction diode D A G TJ = 25 °C, IF = 3.5 A, dI/dt = 100 A/μsb Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %. c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDS. www.vishay.com 2 Document Number: 91045 S11-0508-Rev. B, 21-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF730A, SiHF730A Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 102 ID, Drain-to-Source Current (A) 0.1 4.5 V 20 µs Pulse Width TC = 25 °C 10-2 0.1 1 TJ = 150 °C 10 TJ = 25 °C 1 20 µs Pulse Width VDS = 50 V 0.1 102 10 VDS, Drain-to-Source Voltage (V) 91045_01 ID, Drain-to-Source Current (A) 102 VGS 15 V 10 V 8.0 V 10 7.0 V 6.0 V 5.5 V 5.0 V Bottom 4.5 V 1 Top 4.0 ID, Drain-to-Source Current (A) VGS 15 V 10 V 8.0 V 10 7.0 V 6.0 V 5.5 V 5.0 V 1 Bottom 4.5 V 4.5 V 0.1 20 µs Pulse Width TC = 150 °C 10-2 0.1 91045_02 1 10 102 VDS, Drain-to-Source Voltage (V) Fig. 2 - Typical Output Characteristics Document Number: 91045 S11-0508-Rev. B, 21-Mar-11 7.0 8.0 9.0 10.0 Fig. 3 - Typical Transfer Characteristics RDS(on), Drain-to-Source On Resistance (Normalized) Fig. 1 - Typical Output Characteristics Top 6.0 VGS, Gate-to-Source Voltage (V) 91045_03 102 5.0 91045_04 2.5 ID = 5.5 A VGS = 10 V 2.0 1.5 1.0 0.5 0.0 - 60 - 40 - 20 0 20 40 60 80 100 120 140 160 TJ, Junction Temperature (°C) Fig. 4 - Normalized On-Resistance vs. Temperature www.vishay.com 3 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF730A, SiHF730A Vishay Siliconix VGS = 0 V, f = 1 MHz Ciss = Cgs + Cgd, Cds Shorted Crss = Cgd Coss = Cds + Cgd C, Capacitance (pF) 104 103 Ciss 102 Coss 10 Crss 102 ISD, Reverse Drain Current (A) 105 VGS = 0 V 0.1 1 102 10 103 VDS, Drain-to-Source Voltage (V) 91045_05 0.4 102 ID, Drain Current (A) VDS = 200 V 12 8 4 For test circuit see figure 13 0 0 91045_06 5 10 15 20 Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 10 µs 10 100 µs 1 ms 1 10 ms TC = 25 °C TJ = 150 °C Single Pulse 0.1 10 25 QG, Total Gate Charge (nC) 1.2 1.0 Operation in this area limited by RDS(on) VDS = 320 V VDS = 80 V 0.8 Fig. 7 - Typical Source-Drain Diode Forward Voltage ID = 5.5 A 16 0.6 VSD, Source-to-Drain Voltage (V) 91045_07 Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage VGS, Gate-to-Source Voltage (V) TJ = 25 °C 1 1 20 TJ = 150 °C 10 91045_08 102 103 VDS, Drain-to-Source Voltage (V) Fig. 8 - Maximum Safe Operating Area Document Number: 91045 S11-0508-Rev. B, 21-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF730A, SiHF730A Vishay Siliconix RD VDS VGS 6.0 D.U.T. RG + - VDD ID, Drain Current (A) 5.0 10 V 4.0 Pulse width ≤ 1 µs Duty factor ≤ 0.1 % 3.0 Fig. 10a - Switching Time Test Circuit 2.0 VDS 1.0 90 % 0.0 25 50 75 100 125 150 TC, Case Temperature (°C) 91045_09 10 % VGS td(on) Fig. 9 - Maximum Drain Current vs. Case Temperature td(off) tf tr Fig. 10b - Switching Time Waveforms Thermal Response (ZthJC) 10 1 D = 0.5 0.2 0.1 PDM 0.1 0.05 0.02 0.01 t1 t2 Notes: 1. Duty Factor, D = t1/t2 2. Peak Tj = PDM x ZthJC + TC Single Pulse (Thermal Response) 10-2 10-5 91045_11 10-4 10-3 10-2 0.1 1 t1, Rectangular Pulse Duration (s) Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91045 S11-0508-Rev. B, 21-Mar-11 www.vishay.com 5 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF730A, SiHF730A Vishay Siliconix 610 Driver L VDS D.U.T. RG + A - VDD IAS 20 V 0.01 Ω tp Fig. 12a - Unclamped Inductive Test Circuit VDSav, Avalanche Voltage (V) 15 V 600 590 580 570 560 550 540 0.0 3.0 4.0 5.0 6.0 IAV, Avalanche Current (A) 91045_12d VDS 2.0 1.0 tp Fig. 12d - Typical Drain Source Voltage vs. Avalanche Current IAS QG 10 V QGS QGD Fig. 12b - Unclamped Inductive Waveforms EAS, Single Pulse Avalanche Energy (mJ) VG 700 ID 2.5 A 3.5 A Bottom 5.5 A Charge Top 600 500 Fig. 13a - Basic Gate Charge Waveform 400 300 Current regulator Same type as D.U.T. 200 100 50 kΩ 12 V 0 25 50 75 100 125 0.2 µF 0.3 µF 150 + 91045_12c Starting TJ, Junction Temperature (°C) Fig. 12c - Maximum Avalanche Energy vs. Drain Current D.U.T. - VDS VGS 3 mA IG ID Current sampling resistors Fig. 13b - Gate Charge Test Circuit www.vishay.com 6 Document Number: 91045 S11-0508-Rev. B, 21-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF730A, SiHF730A Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit + D.U.T. Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + - - Rg • • • • + dV/dt controlled by Rg Driver same type as D.U.T. ISD controlled by duty factor “D” D.U.T. - device under test + - VDD Driver gate drive P.W. Period D= P.W. Period VGS = 10 Va D.U.T. lSD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt Re-applied voltage Inductor current VDD Body diode forward drop Ripple ≤ 5 % ISD Note a. VGS = 5 V for logic level devices Fig. 14 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91045. Document Number: 91045 S11-0508-Rev. B, 21-Mar-11 www.vishay.com 7 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix TO-220-1 A E DIM. Q H(1) D 3 2 L(1) 1 M* L b(1) INCHES MIN. MAX. MIN. MAX. A 4.24 4.65 0.167 0.183 b 0.69 1.02 0.027 0.040 b(1) 1.14 1.78 0.045 0.070 F ØP MILLIMETERS c 0.36 0.61 0.014 0.024 D 14.33 15.85 0.564 0.624 E 9.96 10.52 0.392 0.414 e 2.41 2.67 0.095 0.105 e(1) 4.88 5.28 0.192 0.208 F 1.14 1.40 0.045 0.055 H(1) 6.10 6.71 0.240 0.264 0.115 J(1) 2.41 2.92 0.095 L 13.36 14.40 0.526 0.567 L(1) 3.33 4.04 0.131 0.159 ØP 3.53 3.94 0.139 0.155 Q 2.54 3.00 0.100 0.118 ECN: X15-0364-Rev. C, 14-Dec-15 DWG: 6031 Note • M* = 0.052 inches to 0.064 inches (dimension including protrusion), heatsink hole for HVM C b e J(1) e(1) Package Picture ASE Revison: 14-Dec-15 Xi’an Document Number: 66542 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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