IRF9630, SiHF9630 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) • • • • • • • -200 RDS(on) max. () VGS = -10 V 0.80 Qg max. (nC) 29 Qgs (nC) 5.4 Qgd (nC) 15 Configuration Single Dynamic dV/dt rating Repetitive avalanche rated Available P-channel Available Fast switching Ease of paralleling Simple drive requirements Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about parts that are RoHS-compliant and / or parts that are non-RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details. S TO-220AB G DESCRIPTION G D S Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. D P-Channel MOSFET ORDERING INFORMATION Package TO-220AB IRF9630PbF Lead (Pb)-free SiHF9630-E3 IRF9630 SnPb SiHF9630 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS -200 Gate-Source Voltage VGS ± 20 VGS at -10 V Continuous Drain Current TC = 25 °C TC = 100 °C Pulsed Drain Current a ID IDM Linear Derating Factor UNIT V -6.5 -4.0 A -26 0.59 W/°C Single Pulse Avalanche Energy b EAS 500 mJ Repetitive Avalanche Current a IAR -6.4 A EAR 7.4 mJ PD 74 W dV/dt -5.0 V/ns TJ, Tstg -55 to +150 Repetitive Avalanche Energy a Maximum Power Dissipation TC = 25 °C Peak Diode Recovery dV/dt c Operating Junction and Storage Temperature Range Soldering Recommendations (Peak temperature) d Mounting Torque for 10 s 6-32 or M3 screw 300 °C 10 lbf · in 1.1 N·m Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = -50 V, starting TJ = 25 °C, L = 17 mH, Rg = 25 , IAS = -6.5 A (see fig. 12). c. ISD -6.5 A, dI/dt 20 A/μs, VDD VDS, TJ 150 °C. d. 1.6 mm from case. S16-0754-Rev. D, 02-May-16 Document Number: 91084 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF9630, SiHF9630 www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. Maximum Junction-to-Ambient RthJA - 62 Case-to-Sink, Flat, Greased Surface RthCS 0.50 - Maximum Junction-to-Case (Drain) RthJC - 1.7 UNIT °C/W SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage VDS VGS = 0 V, ID = -250 μA -200 - - V VDS/TJ Reference to 25 °C, ID = -1 mA - -0.24 - V/°C VGS(th) VDS = VGS, ID = -250 μA -2.0 - -4.0 V Gate-Source Leakage IGSS VGS = ± 20 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = -200 V, VGS = 0 V - - -100 VDS = -160 V, VGS = 0 V, TJ = 125 °C - - -500 μA - - 0.80 gfs VDS = -50 V, ID = -3.9 A b 2.8 - - S Input Capacitance Ciss 700 - Coss - 200 - Reverse Transfer Capacitance Crss VGS = 0 V, VDS = -25 V, f = 1.0 MHz, see fig. 5 - Output Capacitance - 40 - Drain-Source On-State Resistance Forward Transconductance RDS(on) ID = -3.9 A b VGS = -10 V Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time pF - - 29 - - 5.4 - - 15 td(on) - 12 - tr - 27 - - 28 - - 24 - - 4.5 - - 7.5 - 0.6 - 3.7 - - -6.5 - - -26 - - -6.5 V - 200 300 ns - 1.9 2.9 μC td(off) Fall Time tf Internal Drain Inductance LD Internal Source Inductance LS Gate Input Resistance Rg VGS = -10 V ID = -6.5 A, VDS = -160 V, see fig. 6 and 13 b VDD = -100 V, ID = -6.5 A, Rg = 12 , RD = 15, see fig. 10 b Between lead, 6 mm (0.25") from package and center of die contact D nC ns nH G S f = 1 MHz, open drain Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulsed Diode Forward Current a ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Forward Turn-On Time ton MOSFET symbol showing the integral reverse p -n junction diode D A G S TJ = 25 °C, IS = -6.5 A, VGS = 0 V b TJ = 25 °C, IF = -6.5 A, dI/dt = 100 A/μs b Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 μs; duty cycle 2 %. S16-0754-Rev. D, 02-May-16 Document Number: 91084 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF9630, SiHF9630 www.vishay.com Vishay Siliconix VGS - 15 V - 10 V - 8.0 V - 7.0 V - 6.0 V - 5.5 V - 5.0 V Bottom - 4.5 V - ID, Drain Current (A) Top 101 - 4.5 V 100 20 µs Pulse Width TC = 25 °C 10-1 10-1 100 101 - VDS, Drain-to-Source Voltage (V) 91084_01 RDS(on), Drain-to-Source On Resistance (Normalized) TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 3.0 ID = - 6.5 A VGS = - 10 V 2.5 2.0 1.5 1.0 0.5 0.0 - 60 - 40 - 20 0 TJ, Junction Temperature (°C) 91084_04 Fig. 1 - Typical Output Characteristics, TC = 25 °C 20 40 60 80 100 120 140 160 Fig. 4 - Normalized On-Resistance vs. Temperature 1200 VGS Top - 15 V - 10 V - 8.0 V - 7.0 V - 6.0 V - 5.5 V - 5.0 V Bottom - 4.5 V 100 1000 - 4.5 V Capacitance (pF) - ID, Drain Current (A) 101 VGS = 0 V, f = 1 MHz Ciss = Cgs + Cgd, Cds Shorted Crss = Cgd Coss = Cds + Cgd 800 Ciss 600 400 Coss 200 Crss 20 µs Pulse Width TC = 150 °C 10-1 10-1 100 0 100 101 - VDS, Drain-to-Source Voltage (V) 91084_05 - VDS, Drain-to-Source Voltage (V) 91084_02 Fig. 2 - Typical Output Characteristics, TC = 150 °C Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage 150 °C 25 °C 100 20 µs Pulse Width VDS = - 50 V 4 91084_03 5 6 7 8 9 - VGS, Gate-to-Source Voltage (V) Fig. 3 - Typical Transfer Characteristics S16-0754-Rev. D, 02-May-16 - VGS, Gate-to-Source Voltage (V) - ID, Drain Current (A) 20 101 101 ID = - 6.5 A VDS = - 160 V 16 VDS = - 100 V VDS = - 40 V 12 8 4 For test circuit see figure 13 0 10 0 91084_06 5 10 15 20 25 30 QG, Total Gate Charge (nC) Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Document Number: 91084 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF9630, SiHF9630 www.vishay.com Vishay Siliconix 6.0 101 150 °C - ID, Drain Current (A) - ISD, Reverse Drain Current (A) 7.0 25 °C 100 5.0 4.0 3.0 2.0 1.0 VGS = 0 V 10-1 0.5 0.0 1.5 2.5 4.5 3.5 25 - VSD, Source-to-Drain Voltage (V) 91084_07 50 125 150 Fig. 9 - Maximum Drain Current vs. Case Temperature RD 103 VDS Operation in this area limited by RDS(on) 5 VGS 2 - ID, Drain Current (A) 100 TC, Case Temperature (°C) 91084_09 Fig. 7 - Typical Source-Drain Diode Forward Voltage 75 D.U.T. RG 102 + - VDD 5 10 µs 2 10 - 10 V 100 µs Pulse width ≤ 1 µs Duty factor ≤ 0.1 % 5 1 ms 2 1 Fig. 10a - Switching Time Test Circuit 10 ms TC = 25 °C TJ = 150 °C Single Pulse 5 2 0.1 0.1 2 5 1 2 5 10 2 td(on) 5 102 2 5 td(off) tf tr VGS 103 10 % - VDS, Drain-to-Source Voltage (V) 91084_08 Fig. 8 - Maximum Safe Operating Area 90 % VDS Fig. 10b - Switching Time Waveforms Thermal Response (ZthJC) 10 1 D = 0.5 0.2 0.1 0.1 PDM 0.05 t1 0.02 0.01 t2 Notes: 1. Duty Factor, D = t1/t2 2. Peak Tj = PDM x ZthJC + TC Single Pulse (Thermal Response) 10-2 10-5 91084_11 10-4 10-3 10-2 0.1 1 10 t1, Rectangular Pulse Duration (s) Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case S16-0754-Rev. D, 02-May-16 Document Number: 91084 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF9630, SiHF9630 www.vishay.com Vishay Siliconix IAS L Vary tp to obtain required IAS VDS VDS D.U.T RG + V DD VDD IAS - 10 V 0.01 Ω tp tp A VDS Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms EAS, Single Pulse Energy (mJ) 1200 ID - 2.9 A - 4.1 A Bottom - 6.5 A Top 1000 800 600 400 200 0 VDD = - 50 V 25 91084_12c 50 75 100 125 150 Starting TJ, Junction Temperature (°C) Fig. 12c - Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. 50 kΩ QG - 10 V 12 V 0.2 µF 0.3 µF QGS - QGD D.U.T. VG + VDS VGS - 3 mA Charge IG ID Current sampling resistors Fig. 13a - Basic Gate Charge Waveform S16-0754-Rev. D, 02-May-16 Fig. 13c - Gate Charge Test Circuit Document Number: 91084 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF9630, SiHF9630 www.vishay.com Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit D.U.T. + Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + + - - Rg • dV/dt controlled by Rg • ISD controlled by duty factor “D” • D.U.T. - device under test + - VDD Note • Compliment N-Channel of D.U.T. for driver Driver gate drive P.W. Period D= P.W. Period VGS = - 10 Va D.U.T. lSD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt Re-applied voltage Inductor current VDD Body diode forward drop Ripple ≤ 5 % ISD Note a. VGS = - 5 V for logic level and - 3 V drive devices Fig. 14 - For P-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91084. S16-0754-Rev. D, 02-May-16 Document Number: 91084 6 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix TO-220-1 A E DIM. Q H(1) D 3 2 L(1) 1 M* L b(1) INCHES MIN. MAX. MIN. MAX. A 4.24 4.65 0.167 0.183 b 0.69 1.02 0.027 0.040 b(1) 1.14 1.78 0.045 0.070 F ØP MILLIMETERS c 0.36 0.61 0.014 0.024 D 14.33 15.85 0.564 0.624 E 9.96 10.52 0.392 0.414 e 2.41 2.67 0.095 0.105 e(1) 4.88 5.28 0.192 0.208 F 1.14 1.40 0.045 0.055 H(1) 6.10 6.71 0.240 0.264 0.115 J(1) 2.41 2.92 0.095 L 13.36 14.40 0.526 0.567 L(1) 3.33 4.04 0.131 0.159 ØP 3.53 3.94 0.139 0.155 Q 2.54 3.00 0.100 0.118 ECN: X15-0364-Rev. C, 14-Dec-15 DWG: 6031 Note • M* = 0.052 inches to 0.064 inches (dimension including protrusion), heatsink hole for HVM C b e J(1) e(1) Package Picture ASE Revison: 14-Dec-15 Xi’an Document Number: 66542 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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