IRF510, SiHF510 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) • • • • • • • 100 RDS(on) () VGS = 10 V Qg max. (nC) 0.54 8.3 Qgs (nC) 2.3 Qgd (nC) 3.8 Configuration Single D Dynamic dV/dt rating Available Repetitive avalanche rated 175 °C operating temperature Available Fast switching Ease of paralleling Simple drive requirements Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about parts that are RoHS-compliant and / or parts that are non-RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details. TO-220AB G DESCRIPTION G D S Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. S N-Channel MOSFET ORDERING INFORMATION INFORMATION Package TO-220AB IRF510PbF Lead (Pb)-free SiHF510-E3 IRF510 SnPb SiHF510 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 100 Gate-Source Voltage VGS ± 20 Continuous Drain Current VGS at 10 V TC = 25 °C TC = 100 °C Pulsed Drain Current a ID IDM Linear Derating Factor UNIT V 5.6 4.0 A 20 0.29 W/°C Single Pulse Avalanche Energy b EAS 75 mJ Repetitive Avalanche Current a IAR 5.6 A EAR 4.3 mJ PD 43 W dV/dt 5.5 V/ns TJ, Tstg -55 to +175 Repetitive Avalanche Energy a Maximum Power Dissipation TC = 25 °C Peak Diode Recovery dV/dt c Operating Junction and Storage Temperature Range Soldering Recommendations (Peak temperature) d Mounting Torque for 10 s 6-32 or M3 screw 300 °C 10 lbf · in 1.1 N·m Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 25 V, starting TJ = 25 °C, L = 4.8 mH, Rg = 25 , IAS = 5.6 A (see fig. 12). c. ISD 5.6 A, dI/dt 75 A/μs, VDD VDS, TJ 175 °C. d. 1.6 mm from case. S15-2693-Rev. C, 16-Nov-15 Document Number: 91015 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF510, SiHF510 www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. Maximum Junction-to-Ambient RthJA - 62 Case-to-Sink, Flat, Greased Surface RthCS 0.50 - Maximum Junction-to-Case (Drain) RthJC - 3.5 UNIT °C/W SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS VGS = 0 V, ID = 250 μA 100 - - V VDS/TJ Reference to 25 °C, ID = 1 mA - 0.12 - V/°C VGS(th) VDS = VGS, ID = 250 μA 2.0 - 4.0 V Gate-Source Leakage IGSS VGS = ± 20 V - - ± 100 nA - 25 IDSS VDS = 100 V, VGS = 0 V - Zero Gate Voltage Drain Current VDS = 80 V, VGS = 0 V, TJ = 150 °C - - 250 - - 0.54 1.3 - - S - 180 - Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage Drain-Source On-State Resistance Forward Transconductance RDS(on) gfs μA ID =3.4 A b VGS = 10 V VDS = 50 V, ID = 3.4 Ab Dynamic Input Capacitance Ciss VGS = 0 V, Output Capacitance Coss VDS = 25 V, - 81 - Reverse Transfer Capacitance Crss f = 1.0 MHz, see fig. 5 - 15 - Total Gate Charge Qg ID = 5.6 A, VDS = 80 V - - 8.3 Gate-Source Charge Qgs VDS = 10 V, - - 2.3 Gate-Drain Charge Qgd Turn-On Delay Time td(on) Rise Time Turn-Off Delay Time Fall Time tr td(off) VGS = 10 V see fig. 6 and fig. 13 b VDD = 50 V, ID = 5.6 A Rg = 24 , RD = 8.4, see fig. 10 b tf Internal Drain Inductance LD Internal Source Inductance LS Between lead, 6 mm (0.25") from package and center of die contact D pF nC - - 3.8 - 6.9 - - 16 - - 15 - - 9.4 - - 4.5 - - 7.5 - - - 5.6 - - 20 - - 2.5 V - 100 200 ns - 0.44 0.88 μC ns nH G S Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulsed Diode Forward Currenta ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Forward Turn-On Time ton MOSFET symbol showing the integral reverse p - n junction diode D A G S TJ = 25 °C, IS = 5.6 A, VGS = 0 V b TJ = 25 °C, IF = 5.6 A, dI/dt = 100 A/μs b Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 μs; duty cycle 2 %. S15-2693-Rev. C, 16-Nov-15 Document Number: 91015 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF510, SiHF510 www.vishay.com Vishay Siliconix VGS 15 V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom 4.5 V Top 100 4.5 V 20 µs pulse width TC = 25 °C 10-1 100 101 VDS, Drain-to-Source Voltage (V) 91015_01 Fig. 1 - Typical Output Characteristics, TC = 25 °C ID, Drain Current (A) ID = 5.6 A VGS = 10 V 2.5 2.0 1.5 1.0 0.5 0.0 - 60 - 40 - 20 0 20 40 60 80 100 120 140 160 180 TJ, Junction Temperature (°C) Fig. 4 - Normalized On-Resistance vs. Temperature 400 VGS 15 V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom 4.5 V 101 3.0 91015_04 VGS = 0 V, f = 1 MHz Ciss = Cgs + Cgd, Cds shorted Crss = Cgd Coss = Cds + Cgd Top 100 320 4.5 V Capacitance (pF) ID, Drain Current (A) 101 RDS(on), Drain-to-Source On Resistance (Normalized) TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 240 Ciss 160 Coss 80 Crss 20 µs pulse width TC = 175 °C 100 10-1 100 VDS, Drain-to-Source Voltage (V) 91015_02 25 °C VGS, Gate-to-Source Voltage (V) ID, Drain Current (A) Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage 20 101 175 °C 100 20 µs pulse width VDS = 50 V 10-1 4 5 6 7 8 9 VGS, Gate-to-Source Voltage (V) Fig. 3 - Typical Transfer Characteristics S15-2693-Rev. C, 16-Nov-15 101 VDS, Drain-to-Source Voltage (V) 91015_05 Fig. 2 - Typical Output Characteristics, TC = 175 °C 91015_03 0 101 ID = 5.6 A VDS = 80 V 16 VDS = 50 V VDS = 20 V 12 8 4 For test circuit see figure 13 0 10 0 91015_06 2 4 6 8 10 QG, Total Gate Charge (nC) Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Document Number: 91015 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF510, SiHF510 www.vishay.com Vishay Siliconix 175 °C 100 5.0 ID, Drain Current (A) ISD, Reverse Drain Current (A) 6.0 25 °C 4.0 3.0 2.0 1.0 10-1 VGS = 0 V 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0.0 1.2 25 VSD, Source-to-Drain Voltage (V) 91015_07 50 ID, Drain Current (A) 125 150 RD VDS Operation in this area limited by RDS(on) VGS 2 D.U.T. RG 10 175 Fig. 9 - Maximum Drain Current vs. Case Temperature 102 5 100 TC, Case Temperature (°C) 91015_09 Fig. 7 - Typical Source-Drain Diode Forward Voltage 75 + - VDD 100 µs 5 10 V 1 ms 2 1 Pulse width ≤ 1 µs Duty factor ≤ 0.1 % 10 ms Fig. 10a - Switching Time Test Circuit 5 TC = 25 °C TJ = 175 °C single pulse 2 0.1 2 1 5 10 2 5 VDS 102 2 5 90 % 103 VDS, Drain-to-Source Voltage (V) 91015_08 Fig. 8 - Maximum Safe Operating Area 10 % VGS td(on) td(off) tf tr Fig. 10b - Switching Time Waveforms Thermal Response (ZthJC) 10 0 - 0.5 1 0.2 0.1 0.1 0.05 0.02 0.01 PDM t1 Single pulse (thermal response) t2 Notes: 1. Duty factor, D = t1/t2 2. Peak Tj = PDM x ZthJC + TC 10-2 10-5 91015_11 10-4 10-3 10-2 0.1 1 10 t1, Rectangular Pulse Duration (s) Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case S15-2693-Rev. C, 16-Nov-15 Document Number: 91015 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF510, SiHF510 www.vishay.com Vishay Siliconix L Vary tp to obtain required IAS VDS QG 10 V D.U.T RG + - IAS QGS VG 10 V A 0.01 Ω tp QGD V DD Charge Fig. 12a - Unclamped Inductive Test Circuit Fig. 13a - Basic Gate Charge Waveform Current regulator Same type as D.U.T. VDS 50 kΩ tp 12 V 0.2 µF VDD 0.3 µF + D.U.T. VDS - VDS VGS 3 mA IAS IG ID Current sampling resistors Fig. 12b - Unclamped Inductive Waveforms EAS, Single Pulse Energy (mJ) 300 Fig. 13b - Gate Charge Test Circuit ID 2.3 A 4.0 A Bottom 5.6 A Top 250 200 150 100 50 VDD = 25 V 0 25 91015_12c 50 75 100 125 150 175 Starting TJ, Junction Temperature (°C) Fig. 12c - Maximum Avalanche Energy vs. Drain Current S15-2693-Rev. C, 16-Nov-15 Document Number: 91015 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF510, SiHF510 www.vishay.com Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit + D.U.T. Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + + - - Rg • • • • dV/dt controlled by Rg Driver same type as D.U.T. ISD controlled by duty factor “D” D.U.T. - device under test + - VDD Driver gate drive P.W. Period D= P.W. Period VGS = 10 Va D.U.T. lSD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt Re-applied voltage Inductor current VDD Body diode forward drop Ripple ≤ 5 % ISD Note a. VGS = 5 V for logic level devices Fig. 14 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91015. S15-2693-Rev. C, 16-Nov-15 Document Number: 91015 6 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix TO-220-1 A E DIM. Q H(1) D 3 2 L(1) 1 M* L b(1) INCHES MIN. MAX. MIN. MAX. A 4.24 4.65 0.167 0.183 b 0.69 1.02 0.027 0.040 b(1) 1.14 1.78 0.045 0.070 F ØP MILLIMETERS c 0.36 0.61 0.014 0.024 D 14.33 15.85 0.564 0.624 E 9.96 10.52 0.392 0.414 e 2.41 2.67 0.095 0.105 e(1) 4.88 5.28 0.192 0.208 F 1.14 1.40 0.045 0.055 H(1) 6.10 6.71 0.240 0.264 0.115 J(1) 2.41 2.92 0.095 L 13.36 14.40 0.526 0.567 L(1) 3.33 4.04 0.131 0.159 ØP 3.53 3.94 0.139 0.155 Q 2.54 3.00 0.100 0.118 ECN: X15-0364-Rev. C, 14-Dec-15 DWG: 6031 Note • M* = 0.052 inches to 0.064 inches (dimension including protrusion), heatsink hole for HVM C b e J(1) e(1) Package Picture ASE Revison: 14-Dec-15 Xi’an Document Number: 66542 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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