IRFB13N50A, SiHFB13N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Lower Gate Charge Qg Results in Simpler Drive Reqirements 500 RDS(on) () VGS = 10 V Qg (Max.) (nC) • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness 81 Qgs (nC) 20 Qgd (nC) 36 Configuration Available 0.450 Available • Fully Characterized Capacitance and Avalanche Voltage Single • Compliant to RoHS Directive 2002/95/EC D TO-220AB APPLICATIONS • Switch Mode Power Supply (SMPS) G • Uninterruptible Power Supplies G D • High Speed Power Switching S S N-Channel MOSFET ORDERING INFORMATION Package TO-220AB IRFB13N50APbF SiHFB13N50A-E3 IRFB13N50A SiHFB13N50A Lead (Pb)-free SnPb ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 500 Gate-Source Voltage VGS ± 30 Continuous Drain Current Pulsed Drain VGS at 10 V TC = 25 °C TC = 100 °C Currenta IDM Single Pulse Avalanche Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation TC = 25 °C Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Mounting Torque for 10 s 6-32 or M3 screw V 14 ID Linear Derating Factor Energyb UNIT 9.1 A 56 2.0 W/°C EAS 560 mJ IAR 14 A EAR 25 mJ PD 250 W dV/dt 9.2 V/ns TJ, Tstg - 55 to + 150 300d °C 10 lbf · in 1.1 N·m Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Starting TJ = 25 °C, L = 5.7 mH, Rg = 25 , IAS =14 A, dV/dt = 7.6 V/ns (see fig. 12a). c. ISD 14 A, dI/dt 250 A/μs, VDD VDS, TJ 150 °C. d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91095 S11-0514-Rev. B, 21-Mar-11 www.vishay.com 1 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFB13N50A, SiHFB13N50A Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. Maximum Junction-to-Ambient RthJA - 62 Case-to-Sink, Flat, Greasd Surface RthCS 0.50 - Maximum Junction-to-Case (Drain) RthJC - 0.50 UNIT °C/W SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS VGS = 0 V, ID = 250 μA 500 - - V VDS/TJ Reference to 25 °C, ID = 1 mA - 0.55 - V/°C VGS(th) VDS = VGS, ID = 250 μA 2.0 - 4.0 V nA Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance VGS = ± 30 V - - ± 100 VDS = 500 V, VGS = 0 V - - 25 VDS = 400 V, VGS = 0 V, TJ = 125 °C - - 250 IGSS IDSS RDS(on) gfs ID = 8.4 Ab VGS = 10 V VDS = 50 V, ID = 8.4 A μA - - 0.450 8.1 - - S - 1910 - Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Output Capacitance Effective Output Capacitance Coss Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) Rise Time Fall Time VGS = 0 V Coss eff. Total Gate Charge Turn-Off Delay Time VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 tr td(off) - 290 - - 11 - VDS = 1.0 V, f = 1.0 MHz - 2730 - VDS = 400 V, f = 1.0 MHz - 82 - - 160 - - - 81 - - 20 - - 36 - 15 - - 39 - - 39 - - 31 - - - 14 - - 56 - - 1.5 - 370 550 ns - 4.4 6.5 μC - 21 31 A VDS = 0 V to 400 Vc ID = 14 A, VDS = 400 V, see fig. 6 and 13b VGS = 10 V VDD = 250 V, ID = 14 A, Rg = 7.5, see fig. 10b tf pF nC ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulsed Diode Forward Currenta ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Body Diode Reverse Recovery Current IRRM Forward Turn-On Time ton MOSFET symbol showing the integral reverse p - n junction diode D A G TJ = 25 °C, IS = 14 A, VGS = 0 Vb TJ = 25 °C, IF = 14 A, TJ = 125 °C, dI/dt = 100 A/μsb S V Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 μs; duty cycle 2 %. c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDS. www.vishay.com 2 Document Number: 91095 S11-0514-Rev. B, 21-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFB13N50A, SiHFB13N50A Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 102 VGS Top 15 V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom 4.5 V 10 4.5 V 1 0.1 20 µs Pulse Width TJ = 25 °C 10-2 0.1 1 TJ = 150 °C 10 4 91095_03 91095_02 4.5 V 1 20 µs Pulse Width TJ = 150 °C 0.1 0.1 1 10 VDS, Drain-to-Source Voltage (V) Fig. 2 - Typical Output Characteristics Document Number: 91095 S11-0514-Rev. B, 21-Mar-11 6 8 10 12 14 16 VGS, Gate-to-Source Voltage (V) Fig. 3 - Typical Transfer Characteristics RDS(on), Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current (A) 10 VGS Top 15 V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom 4.5 V 20 µs Pulse Width VDS = 50 V 0.1 Fig. 1 - Typical Output Characteristics 102 TJ = 25 °C 1 102 10 VDS, Drain-to-Source Voltage (V) 91095_01 ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) 102 102 91095_04 3.0 ID = 14 A VGS = 10 V 2.5 2.0 1.5 1.0 0.5 0.0 - 60 - 40 - 20 0 20 40 60 80 100 120 140 160 TJ, Junction Temperature (°C) Fig. 4 - Normalized On-Resistance vs. Temperature www.vishay.com 3 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFB13N50A, SiHFB13N50A Vishay Siliconix C, Capacitance (pF) 104 Ciss 103 102 VGS = 0 V, f = 1 MHz Ciss = Cgs + Cgd, Cds Shorted Crss = Cgd Coss = Cds + Cgd ISD, Reverse Drain Current (A) 105 Coss 102 Crss 10 102 10 0.2 VDS = 250 V 7.5 5 2.5 0 102 100 µs 10 1 ms 1 0.1 0 91095_06 12 24 36 48 60 QG, Total Gate Charge (nC) Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 1.4 1.1 Operation in this area limited by RDS(on) VDS = 400 V ID, Drain Current (A) VGS, Gate-to-Source Voltage (V) 103 VDS = 100 V 0.8 Fig. 7 - Typical Source-Drain Diode Forward Voltage ID = 14 A 10 0.5 VSD, Source-to-Drain Voltage (V) 91095_07 Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage 12.5 VGS = 0 V 0.1 103 VDS, Drain-to-Source Voltage (V) 91095_05 TJ = 25 °C 1 1 1 TJ = 150 °C 10 10 91095_08 TC = 25 °C TJ = 150 °C Single Pulse 10 ms 102 103 104 VDS, Drain-to-Source Voltage (V) Fig. 8 - Maximum Safe Operating Area Document Number: 91095 S11-0514-Rev. B, 21-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFB13N50A, SiHFB13N50A Vishay Siliconix RD VDS 15 VGS D.U.T. RG + - VDD ID, Drain Current (A) 12 10 V 9 Pulse width ≤ 1 µs Duty factor ≤ 0.1 % 6 Fig. 10a - Switching Time Test Circuit 3 VDS 0 50 25 75 100 125 90 % 150 TC, Case Temperature (°C) 91095_09 10 % VGS td(on) td(off) tf tr Fig. 9 - Maximum Drain Current vs. Case Temperature Fig. 10b - Switching Time Waveforms Thermal Response (ZthJC) 1 D = 0.50 0.1 10-2 0.20 0.10 0.05 0.02 0.01 PDM Single Pulse (Thermal Response) t1 t2 Notes: 1. Duty Factor, D = t1/t2 2. Peak TJ = PDM x ZthJC + TC 10-3 10-5 91095_11 10-4 10-3 10-2 0.1 1 t1, Rectangular Pulse Duration (s) Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91095 S11-0514-Rev. B, 21-Mar-11 www.vishay.com 5 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFB13N50A, SiHFB13N50A Vishay Siliconix VDS 15 V Driver L VDS tp D.U.T. RG + A - VDD IAS 20 V tp IAS 0.01 Ω Fig. 12b - Unclamped Inductive Waveforms Fig. 12a - Unclamped Inductive Test Circuit 1150 ID EAS, Single Pulse Avalanche Energy (mJ) 920 TOP 6.3A BOTTOM 8.9A 14A 690 460 230 0 25 50 75 100 125 150 Starting Tj, Junction Temperature (°C) Fig. 12c - Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. 50 kΩ QG VGS 12 V 0.2 µF 0.3 µF QGS QGD + D.U.T. VG - VDS VGS 3 mA Charge IG ID Current sampling resistors Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 Fig. 13b - Gate Charge Test Circuit Document Number: 91095 S11-0514-Rev. B, 21-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFB13N50A, SiHFB13N50A Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit + D.U.T. Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + - - Rg • • • • + dV/dt controlled by Rg Driver same type as D.U.T. ISD controlled by duty factor “D” D.U.T. - device under test + - VDD Driver gate drive P.W. Period D= P.W. Period VGS = 10 Va D.U.T. lSD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt Re-applied voltage Inductor current VDD Body diode forward drop Ripple ≤ 5 % ISD Note a. VGS = 5 V for logic level devices Fig. 14 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and Document Number: 91095 S11-0514-Rev. B, 21-Mar-11 www.vishay.com 7 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFB13N50A, SiHFB13N50A Vishay Siliconix reliability data, see www.vishay.com/ppg?91095. www.vishay.com 8 Document Number: 91095 S11-0514-Rev. B, 21-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix TO-220-1 A E DIM. Q H(1) D 3 2 L(1) 1 M* L b(1) INCHES MIN. MAX. MIN. MAX. A 4.24 4.65 0.167 0.183 b 0.69 1.02 0.027 0.040 b(1) 1.14 1.78 0.045 0.070 F ØP MILLIMETERS c 0.36 0.61 0.014 0.024 D 14.33 15.85 0.564 0.624 E 9.96 10.52 0.392 0.414 e 2.41 2.67 0.095 0.105 e(1) 4.88 5.28 0.192 0.208 F 1.14 1.40 0.045 0.055 H(1) 6.10 6.71 0.240 0.264 0.115 J(1) 2.41 2.92 0.095 L 13.36 14.40 0.526 0.567 L(1) 3.33 4.04 0.131 0.159 ØP 3.53 3.94 0.139 0.155 Q 2.54 3.00 0.100 0.118 ECN: X15-0364-Rev. C, 14-Dec-15 DWG: 6031 Note • M* = 0.052 inches to 0.064 inches (dimension including protrusion), heatsink hole for HVM C b e J(1) e(1) Package Picture ASE Revison: 14-Dec-15 Xi’an Document Number: 66542 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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