IRFB13N50A, SiHFB13N50A Datasheet

IRFB13N50A, SiHFB13N50A
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
• Lower Gate Charge Qg Results in Simpler Drive
Reqirements
500
RDS(on) ()
VGS = 10 V
Qg (Max.) (nC)
• Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
81
Qgs (nC)
20
Qgd (nC)
36
Configuration
Available
0.450
Available
• Fully Characterized Capacitance and Avalanche Voltage
Single
• Compliant to RoHS Directive 2002/95/EC
D
TO-220AB
APPLICATIONS
• Switch Mode Power Supply (SMPS)
G
• Uninterruptible Power Supplies
G
D
• High Speed Power Switching
S
S
N-Channel MOSFET
ORDERING INFORMATION
Package
TO-220AB
IRFB13N50APbF
SiHFB13N50A-E3
IRFB13N50A
SiHFB13N50A
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS
500
Gate-Source Voltage
VGS
± 30
Continuous Drain Current
Pulsed Drain
VGS at 10 V
TC = 25 °C
TC = 100 °C
Currenta
IDM
Single Pulse Avalanche
Avalanche Currenta
Repetitive Avalanche
Energya
Maximum Power Dissipation
TC = 25 °C
Peak Diode Recovery dV/dtc
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
for 10 s
6-32 or M3 screw
V
14
ID
Linear Derating Factor
Energyb
UNIT
9.1
A
56
2.0
W/°C
EAS
560
mJ
IAR
14
A
EAR
25
mJ
PD
250
W
dV/dt
9.2
V/ns
TJ, Tstg
- 55 to + 150
300d
°C
10
lbf · in
1.1
N·m
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting TJ = 25 °C, L = 5.7 mH, Rg = 25 , IAS =14 A, dV/dt = 7.6 V/ns (see fig. 12a).
c. ISD  14 A, dI/dt  250 A/μs, VDD  VDS, TJ  150 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91095
S11-0514-Rev. B, 21-Mar-11
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This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFB13N50A, SiHFB13N50A
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYP.
MAX.
Maximum Junction-to-Ambient
RthJA
-
62
Case-to-Sink, Flat, Greasd Surface
RthCS
0.50
-
Maximum Junction-to-Case (Drain)
RthJC
-
0.50
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
VDS
VGS = 0 V, ID = 250 μA
500
-
-
V
VDS/TJ
Reference to 25 °C, ID = 1 mA
-
0.55
-
V/°C
VGS(th)
VDS = VGS, ID = 250 μA
2.0
-
4.0
V
nA
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
VGS = ± 30 V
-
-
± 100
VDS = 500 V, VGS = 0 V
-
-
25
VDS = 400 V, VGS = 0 V, TJ = 125 °C
-
-
250
IGSS
IDSS
RDS(on)
gfs
ID = 8.4 Ab
VGS = 10 V
VDS = 50 V, ID = 8.4 A
μA
-
-
0.450

8.1
-
-
S
-
1910
-
Dynamic
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Output Capacitance
Effective Output Capacitance
Coss
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Turn-On Delay Time
td(on)
Rise Time
Fall Time
VGS = 0 V
Coss eff.
Total Gate Charge
Turn-Off Delay Time
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
tr
td(off)
-
290
-
-
11
-
VDS = 1.0 V, f = 1.0 MHz
-
2730
-
VDS = 400 V, f = 1.0 MHz
-
82
-
-
160
-
-
-
81
-
-
20
-
-
36
-
15
-
-
39
-
-
39
-
-
31
-
-
-
14
-
-
56
-
-
1.5
-
370
550
ns
-
4.4
6.5
μC
-
21
31
A
VDS = 0 V to 400
Vc
ID = 14 A, VDS = 400 V,
see fig. 6 and 13b
VGS = 10 V
VDD = 250 V, ID = 14 A,
Rg = 7.5,
see fig. 10b
tf
pF
nC
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulsed Diode Forward Currenta
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Body Diode Reverse Recovery Current
IRRM
Forward Turn-On Time
ton
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
A
G
TJ = 25 °C, IS = 14 A, VGS = 0 Vb
TJ = 25 °C, IF = 14 A,
TJ = 125 °C, dI/dt = 100 A/μsb
S
V
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width  300 μs; duty cycle  2 %.
c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDS.
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Document Number: 91095
S11-0514-Rev. B, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFB13N50A, SiHFB13N50A
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
102
VGS
Top
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom 4.5 V
10
4.5 V
1
0.1
20 µs Pulse Width
TJ = 25 °C
10-2
0.1
1
TJ = 150 °C
10
4
91095_03
91095_02
4.5 V
1
20 µs Pulse Width
TJ = 150 °C
0.1
0.1
1
10
VDS, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics
Document Number: 91095
S11-0514-Rev. B, 21-Mar-11
6
8
10
12
14
16
VGS, Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
RDS(on), Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (A)
10
VGS
Top
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom 4.5 V
20 µs Pulse Width
VDS = 50 V
0.1
Fig. 1 - Typical Output Characteristics
102
TJ = 25 °C
1
102
10
VDS, Drain-to-Source Voltage (V)
91095_01
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
102
102
91095_04
3.0
ID = 14 A
VGS = 10 V
2.5
2.0
1.5
1.0
0.5
0.0
- 60 - 40 - 20 0
20 40 60 80 100 120 140 160
TJ, Junction Temperature (°C)
Fig. 4 - Normalized On-Resistance vs. Temperature
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This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFB13N50A, SiHFB13N50A
Vishay Siliconix
C, Capacitance (pF)
104
Ciss
103
102
VGS = 0 V, f = 1 MHz
Ciss = Cgs + Cgd, Cds Shorted
Crss = Cgd
Coss = Cds + Cgd
ISD, Reverse Drain Current (A)
105
Coss
102
Crss
10
102
10
0.2
VDS = 250 V
7.5
5
2.5
0
102
100 µs
10
1 ms
1
0.1
0
91095_06
12
24
36
48
60
QG, Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
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1.4
1.1
Operation in this area limited
by RDS(on)
VDS = 400 V
ID, Drain Current (A)
VGS, Gate-to-Source Voltage (V)
103
VDS = 100 V
0.8
Fig. 7 - Typical Source-Drain Diode Forward Voltage
ID = 14 A
10
0.5
VSD, Source-to-Drain Voltage (V)
91095_07
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
12.5
VGS = 0 V
0.1
103
VDS, Drain-to-Source Voltage (V)
91095_05
TJ = 25 °C
1
1
1
TJ = 150 °C
10
10
91095_08
TC = 25 °C
TJ = 150 °C
Single Pulse
10 ms
102
103
104
VDS, Drain-to-Source Voltage (V)
Fig. 8 - Maximum Safe Operating Area
Document Number: 91095
S11-0514-Rev. B, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFB13N50A, SiHFB13N50A
Vishay Siliconix
RD
VDS
15
VGS
D.U.T.
RG
+
- VDD
ID, Drain Current (A)
12
10 V
9
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
6
Fig. 10a - Switching Time Test Circuit
3
VDS
0
50
25
75
100
125
90 %
150
TC, Case Temperature (°C)
91095_09
10 %
VGS
td(on)
td(off) tf
tr
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 10b - Switching Time Waveforms
Thermal Response (ZthJC)
1
D = 0.50
0.1
10-2
0.20
0.10
0.05
0.02
0.01
PDM
Single Pulse
(Thermal Response)
t1
t2
Notes:
1. Duty Factor, D = t1/t2
2. Peak TJ = PDM x ZthJC + TC
10-3
10-5
91095_11
10-4
10-3
10-2
0.1
1
t1, Rectangular Pulse Duration (s)
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Document Number: 91095
S11-0514-Rev. B, 21-Mar-11
www.vishay.com
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This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFB13N50A, SiHFB13N50A
Vishay Siliconix
VDS
15 V
Driver
L
VDS
tp
D.U.T.
RG
+
A
- VDD
IAS
20 V
tp
IAS
0.01 Ω
Fig. 12b - Unclamped Inductive Waveforms
Fig. 12a - Unclamped Inductive Test Circuit
1150
ID
EAS, Single Pulse Avalanche Energy (mJ)
920
TOP
6.3A
BOTTOM
8.9A
14A
690
460
230
0
25
50
75
100
125
150
Starting Tj, Junction Temperature (°C)
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Current regulator
Same type as D.U.T.
50 kΩ
QG
VGS
12 V
0.2 µF
0.3 µF
QGS
QGD
+
D.U.T.
VG
-
VDS
VGS
3 mA
Charge
IG
ID
Current sampling resistors
Fig. 13a - Basic Gate Charge Waveform
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Fig. 13b - Gate Charge Test Circuit
Document Number: 91095
S11-0514-Rev. B, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFB13N50A, SiHFB13N50A
Vishay Siliconix
Peak Diode Recovery dV/dt Test Circuit
+
D.U.T.
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
+
-
-
Rg
•
•
•
•
+
dV/dt controlled by Rg
Driver same type as D.U.T.
ISD controlled by duty factor “D”
D.U.T. - device under test
+
-
VDD
Driver gate drive
P.W.
Period
D=
P.W.
Period
VGS = 10 Va
D.U.T. lSD waveform
Reverse
recovery
current
Body diode forward
current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt
Re-applied
voltage
Inductor current
VDD
Body diode forward drop
Ripple ≤ 5 %
ISD
Note
a. VGS = 5 V for logic level devices
Fig. 14 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
Document Number: 91095
S11-0514-Rev. B, 21-Mar-11
www.vishay.com
7
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFB13N50A, SiHFB13N50A
Vishay Siliconix
reliability data, see www.vishay.com/ppg?91095.
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Document Number: 91095
S11-0514-Rev. B, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
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Vishay Siliconix
TO-220-1
A
E
DIM.
Q
H(1)
D
3
2
L(1)
1
M*
L
b(1)
INCHES
MIN.
MAX.
MIN.
MAX.
A
4.24
4.65
0.167
0.183
b
0.69
1.02
0.027
0.040
b(1)
1.14
1.78
0.045
0.070
F
ØP
MILLIMETERS
c
0.36
0.61
0.014
0.024
D
14.33
15.85
0.564
0.624
E
9.96
10.52
0.392
0.414
e
2.41
2.67
0.095
0.105
e(1)
4.88
5.28
0.192
0.208
F
1.14
1.40
0.045
0.055
H(1)
6.10
6.71
0.240
0.264
0.115
J(1)
2.41
2.92
0.095
L
13.36
14.40
0.526
0.567
L(1)
3.33
4.04
0.131
0.159
ØP
3.53
3.94
0.139
0.155
Q
2.54
3.00
0.100
0.118
ECN: X15-0364-Rev. C, 14-Dec-15
DWG: 6031
Note
• M* = 0.052 inches to 0.064 inches (dimension including
protrusion), heatsink hole for HVM
C
b
e
J(1)
e(1)
Package Picture
ASE
Revison: 14-Dec-15
Xi’an
Document Number: 66542
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
1
Document Number: 91000