LITTELFUSE T10B110B

T10B SIDACtor® Device
RoHS
This T10 SIDACtor series enables equipment to comply with various regulatory
requirements including GR 1089, ITU K.20, K.21, and K.45, IEC 60950, UL 60950, and TIA968-A (formerly known as FCC Part 68).
Electrical Parameters
Part
Number *
VDRM @ 5 µA
Volts
VS
Volts
VT
Volts
IS
mAmps
IH
mAmps
pF
TYP
T10B080B
80
120
4
800
120
60
T10B080E
80
120
4
800
180
60
T10B110B
105
135
4
800
120
55
T10B110E
105
135
4
800
180
55
T10B140B
140
170
4
800
120
48
T10B140E
140
170
4
800
180
48
T10B180B
175
210
4
800
120
44
T10B180E
175
210
4
800
180
44
T10B220B
214
265
4
800
120
41
T10B220E
214
265
4
800
180
41
T10B270B
270
360
4
800
120
36
T10B270E
270
360
4
800
180
36
* For surge ratings, see table below.
General Notes:
• All measurements are made at an ambient temperature of 25 °C. IPP applies to -40 °C through +85 °C temperature range.
• IPP is a repetitive surge rating and is guaranteed for the life of the product.
• Listed SIDACtor devices are bi-directional. All electrical parameters and surge ratings apply to forward and reverse polarities.
• VDRM is measured at IDRM.
• VS is measured at 0.5 V/µs.
• Special voltage (VS and VDRM) and holding current (IH) requirements are available upon request.
Surge Ratings in Amps
IPP
8x20 *
1.2x50 **
5x310 *
10x700 **
10x1000 *
10x1000 **
ITSM
50 / 60 Hz
di/dt
Series
Amps
Amps
Amps
Amps
Amps/µs
B
250
125
100
50
100
* Current waveform in µs
** Voltage waveform in µs
Telecom Design Guide • © 2006 Littelfuse
3 - 27
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SIDACtor Devices
The bi-directional T10B devices are a through-hole technology SIDACtor protector. It is
intended for cost-sensitive telecommunication applications.
T10B SIDACtor® Device
Thermal Considerations
Package
Symbol
DO-201AD
TJ
Operating Junction Temperature Range
TS
Storage Temperature Range
RθJA
Parameter
Value
Unit
150
°C
-40 to +150
°C
60
°C/W
Thermal Resistance: Junction to Ambient
IPP – Peak Pulse Current – %IPP
+I
IT
IS
IH
IDRM
-V
+V
VT
VDRM
VS
Peak
Value
100
tr = rise time to peak value
td = decay time to half value
Waveform = tr x td
50
Half Value
0
0
tr
td
t – Time (µs)
-I
14
12
10
IH
8
6
25 ˚C
4
2
IH (TC = 25 ˚C)
tr x td Pulse Waveform
Ratio of
Percent of VS Change – %
V-I Characteristics
0
-4
2.0
1.8
1.6
1.4
25 ˚C
1.2
1.0
0.8
0.6
0.4
-40 -20 0
-6
-8
-40 -20
0
20 40 60 80 100 120 140 160
Case Temperature (TC) – ˚C
20 40 60 80 100 120 140 160
Junction Temperature (TJ) – ˚C
Normalized VS Change versus Junction Temperature
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Normalized DC Holding Current versus Case Temperature
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© 2006 Littelfuse • Telecom Design Guide