IRFPS38N60L, SiHFPS38N60L Datasheet

IRFPS38N60L, SiHFPS38N60L
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
• Superfast Body Diode Eliminates the Need for
External Diodes in ZVS Applications
600
RDS(on) ()
VGS = 10 V
Qg (Max.) (nC)
0.12
• Lower Gate Charge Results in Simple Drive
Requirements
320
Qgs (nC)
85
Qgd (nC)
160
Configuration
Available
RoHS*
COMPLIANT
• Enhanced dV/dt Capabilities Offer Improved
Ruggedness
• Higher Gate Voltage Threshold Offers Improved Noise
Immunity
Single
D
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
Super-247
• Zero Voltage Switching SMPS
G
• Telecom and Server Power Supplies
• Uniterruptible Power Supplies
S
D
G
• Motor Control applications
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Super-247
IRFPS38N60LPbF
Lead (Pb)-free
SiHFPS38N60L-E3
IRFPS38N60L
SnPb
SiHFPS38N60L
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS
600
Gate-Source Voltage
VGS
± 30
Continuous Drain Current
VGS at 10 V
TC = 25 °C
ID
TC = 100 °C
Pulsed Drain Currenta
UNIT
V
38
24
A
IDM
150
4.3
W/°C
EAS
680
mJ
Currenta
IAR
38
A
Repetitive Avalanche Energya
EAR
54
mJ
Linear Derating Factor
Single Pulse Avalanche Energyb
Repetitive Avalanche
Maximum Power Dissipation
TC = 25 °C
Peak Diode Recovery dV/dtc
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
PD
540
W
dV/dt
19
V/ns
TJ, Tstg
- 55 to + 150
for 10 s
6-32 or M3 screw
300d
°C
10
lbf · in
1.1
N·m
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 12).
b. Starting TJ = 25 °C, L = 0.91 mH, Rg = 25 , IAS = 38 A, dV/dt = 13 V/ns (see fig. 14a).
c. ISD  38 A, dI/dt  630 A/μs, VDD  VDS, TJ  150 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91259
S11-0111-Rev. B, 07-Feb-11
www.vishay.com
1
IRFPS38N60L, SiHFPS38N60L
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
SYMBOL
TYP.
MAX.
UNIT
RthJA
RthCS
RthJC
0.24
-
40
0.22
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
VDS
VGS = 0 V, ID = 250 μA
600
-
-
V
VDS/TJ
Reference to 25 °C, ID = 1 mA
-
410
-
mV/°C
VGS(th)
VDS = VGS, ID = 250 μA
3.0
-
5.0
V
Gate-Source Leakage
IGSS
VGS = ± 30 V
-
-
± 100
nA
Zero Gate Voltage Drain Current
IDSS
Drain-Source On-State Resistance
RDS(on)
Forward Transconductance
gfs
VDS = 600 V, VGS = 0 V
-
-
50
μA
VDS = 480 V, VGS = 0 V, TJ = 125 °C
-
-
2.0
mA
-
0.12
0.15

VDS = 50 V, ID = 23 Ab
20
-
-
S
ID = 23 Ab
VGS = 10 V
Dynamic
Input Capacitance
Ciss
VGS = 0 V,
-
7990
-
Output Capacitance
Coss
VDS = 25 V,
-
740
-
f = 1.0 MHz, see fig. 5
-
72
-
-
350
-
-
260
-
-
-
320
-
-
85
-
-
160
-
1.2
-
-
44
-
-
130
-
-
92
-
-
69
-
-
-
38
-
-
150
TJ = 25 °C, IS = 38 A, VGS = 0 Vb
-
-
1.5
Reverse Transfer Capacitance
Crss
Effective Output Capacitance
Coss eff.
Effective Output Capacitance
(Energy Related)
Coss eff. (ER)
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
VGS = 0 V
VDS = 0 V to 480 Vc
RG
td(on)
tr
VGS = 10 V
ID = 38 A, VDS = 480 V
see fig. 7 and 15b
f = 1 MHz, open drain
VDD = 300 V, ID = 38 A,
td(off)
RG = 4.3 , VGS = 10 V,
tf
see fig. 11a and 11bb
pF
nC

ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulsed Diode Forward Currenta
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Time
IRRM
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
A
G
S
TJ = 25 °C, IF = 38 A
-
170
250
TJ = 125 °C, dI/dt = 100 A/μsb
-
420
630
TJ = 25 °C, IF = 38 A, VGS = 0 Vb
-
830
1240
-
2600
3900
-
9.1
14
TJ = 125 °C, dI/dt = 100
TJ = 25 °C
A/μsb
V
ns
nC
A
Forward Turn-On Time
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 12).
b. Pulse width  300 μs; duty cycle  2 %.
c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising form 0 % to 80 % VDS.
Coss eff. (ER) is a fixed capacitance that stores the same energy as Coss while VDS is rising from 0 % to 80 % VDS.
www.vishay.com
2
Document Number: 91259
S11-0111-Rev. B, 07-Feb-11
IRFPS38N60L, SiHFPS38N60L
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1000
1000
10
BOTTOM
ID, Drain-to-Source Current (Α )
ID, Drain-to-Source Current (A)
TOP
100
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
1
0.1
4.5V
0.01
100
T J = 150°C
10
1
T J = 25°C
0.1
20µs PULSE WIDTH
Tj = 25°C
0.001
0.01
0.1
1
10
100
4
VDS, Drain-to-Source Voltage (V)
8
10
12
14
16
VGS , Gate-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
3.0
100
BOTTOM
10
4.5V
1
20µs PULSE WIDTH
Tj = 150°C
ID = 38A
2.5
VGS = 10V
2.0
(Normalized)
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
RDS(on) , Drain-to-Source On Resistance
1000
ID, Drain-to-Source Current (A)
6
1.5
1.0
0.5
0.0
0.1
0.1
1
10
100
-60 -40 -20
0
20
40
60
80 100 120 140 160
VDS, Drain-to-Source Voltage (V)
T J , Junction Temperature (°C)
Fig. 2 - Typical Output Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91259
S11-0111-Rev. B, 07-Feb-11
www.vishay.com
3
IRFPS38N60L, SiHFPS38N60L
Vishay Siliconix
100000
C, Capacitance(pF)
10000
= 0V,
f = 1 MHZ
= Cgs + Cgd , Cds SHORTED
= Cgd
= Cds + Cgd
Ciss
1000
Coss
100
Crss
12.0
ID= 38A
VGS , Gate-to-Source Voltage (V)
VGS
Ciss
Crss
Coss
10.0
VDS= 480V
VDS= 300V
VDS= 120V
8.0
6.0
4.0
2.0
0.0
10
1
10
100
0
1000
VDS , Drain-to-Source Voltage (V)
50
100
150
200
250
Q G Total Gate Charge (nC)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
50
Fig. 7 - Typical Gate Charge vs. Gate-to-Source Voltage
1000.00
ISD, Reverse Drain Current (A)
45
40
100.00
Energy (µJ)
35
30
25
20
15
10
T J = 150°C
10.00
1.00
5
T J = 25°C
VGS = 0V
0
0.10
0
100
200
300
400
500
600
700
VDS, Drain-to-Source Voltage (V)
Fig. 6 - Typical Output Capacitance Stored Energy vs. VDS
www.vishay.com
4
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VSD, Source-to-Drain Voltage (V)
Fig. 8 - Typical Source-Drain Diode Forward Voltage
Document Number: 91259
S11-0111-Rev. B, 07-Feb-11
IRFPS38N60L, SiHFPS38N60L
Vishay Siliconix
1000
RD
ID, Drain-to-Source Current (A)
OPERATION IN THIS AREA
LIMITED BY R DS(on)
VDS
VGS
100
D.U.T.
RG
10 V
100µsec
10
+
- VDD
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
1msec
Fig. 11a - Switching Time Test Circuit
1
Tc = 25°C
Tj = 150°C
Single Pulse
10msec
VDS
90 %
0.1
1
10
100
1000
10000
VDS, Drain-to-Source Voltage (V)
Fig. 9 - Maximum Safe Operating Area
10 %
VGS
40
td(on)
td(off) tf
tr
Fig. 11b - Switching Time Waveforms
35
ID, Drain Current (A)
30
25
20
15
10
5
0
25
50
75
100
125
150
T C , Case Temperature (°C)
Fig. 10 - Maximum Drain Current vs. Case Temperature
Thermal Response ( Z thJC )
1
0.1
D = 0.50
0.20
0.10
0.01
0.05
0.02
0.01
P DM
t1
0.001
t2
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty factor D =
2. Peak T
t1/ t 2
J = P DM x Z thJC
+T C
0.0001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig. 12 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Document Number: 91259
S11-0111-Rev. B, 07-Feb-11
www.vishay.com
5
IRFPS38N60L, SiHFPS38N60L
Vishay Siliconix
VGS(th) Gate threshold Voltage (V)
5.0
VDS
4.5
tp
4.0
3.5
3.0
ID = 250µA
2.5
IAS
2.0
1.5
Fig. 14c - Unclamped Inductive Waveforms
1.0
Current regulator
Same type as D.U.T.
0.5
0.0
-75 -50 -25
0
25
50
75
100 125 150 175
50 kΩ
12 V
T J , Temperature ( °C )
0.2 µF
0.3 µF
+
Fig. 13 - Threshold Voltage vs. Temperature
D.U.T.
-
VDS
EAS , Single Pulse Avalanche Energy (mJ)
1400
VGS
ID
TOP
17A
24A
BOTTOM 38A
1200
1000
3 mA
IG
ID
Current sampling resistors
Fig. 15a - Basic Gate Charge Waveform
800
600
400
200
QG
VGS
0
QGS
25
50
75
100
125
QGD
150
Starting T J , Junction Temperature (°C)
Fig. 14a - Maximum Avalanche Energy vs. Drain Current
VG
Charge
Fig. 15b - Gate Charge Test Circuit
15 V
L
VDS
D.U.T
RG
IAS
20 V
tp
Driver
+
- VDD
A
0.01Ω
Fig. 14b - Unclamped Inductive Test Circuit
www.vishay.com
6
Document Number: 91259
S11-0111-Rev. B, 07-Feb-11
IRFPS38N60L, SiHFPS38N60L
Vishay Siliconix
Peak Diode Recovery dV/dt Test Circuit
+
D.U.T.
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
+
-
-
Rg
•
•
•
•
+
dV/dt controlled by Rg
Driver same type as D.U.T.
ISD controlled by duty factor “D”
D.U.T. - device under test
+
-
VDD
Driver gate drive
P.W.
Period
D=
P.W.
Period
VGS = 10 Va
D.U.T. lSD waveform
Reverse
recovery
current
Body diode forward
current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt
Re-applied
voltage
Inductor current
VDD
Body diode forward drop
Ripple ≤ 5 %
ISD
Note
a. VGS = 5 V for logic level devices
Fig. 16 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91259.
Document Number: 91259
S11-0111-Rev. B, 07-Feb-11
www.vishay.com
7
Package Information
Vishay Siliconix
TO-274AA (HIGH VOLTAGE)
B
A
E
E4
A
D2
E1
A1
R
D1
D
L1
L
Detail “A”
C
b
e
A2
0.10 (0.25) M B A M
10°
b4
b2
Lead Tip
5°
Detail “A”
Scale: 2:1
MILLIMETERS
DIM.
MIN.
MAX.
INCHES
MIN.
MAX.
MILLIMETERS
DIM.
MIN.
MAX.
INCHES
MIN.
MAX.
A
4.70
5.30
0.185
0.209
D1
15.50
16.10
0.610
0.634
A1
1.50
2.50
0.059
0.098
D2
0.70
1.30
0.028
0.051
A2
2.25
2.65
0.089
0.104
E
15.10
16.10
0.594
0.634
b
1.30
1.60
0.051
0.063
E1
13.30
13.90
0.524
0.547
b2
1.80
2.20
0.071
0.087
e
b4
3.00
3.25
0.118
0.128
L
13.70
14.70
0.539
0.579
c
0.80
1.20
0.031
0.047
L1
1.00
1.60
0.039
0.063
D
19.80
20.80
0.780
0.819
R
2.00
3.00
0.079
0.118
5.45 BSC
0.215 BSC
ECN: S-82247-Rev. A, 06-Oct-08
DWG: 5975
Notes
1. Dimensioning and tolerancing per ASME Y14.5M-1994.
2. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the
outer extremes of the plastic body.
3. Outline conforms to JEDEC outline to TO-274AA.
Document Number: 91365
Revision: 06-Oct-08
www.vishay.com
1
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
1
Document Number: 91000