IRFP21N60L, SiHFP21N60L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications 600 RDS(on) () VGS = 10 V 0.27 Qg (Max.) (nC) 150 Qgs (nC) 46 Qgd (nC) 64 Configuration • Lower Gate Charge Results in Simple Drive Requirements Available RoHS* COMPLIANT • Enhanced dV/dt Capabilities Offer Improved Ruggedness • Higher Gate Voltage Threshold Offers Improved Noise Immunity Single D • Compliant to RoHS Directive 2002/95/EC TO-247AC APPLICATIONS • Zero Voltage Switching SMPS G • Telecom and Server Power Supplies • Uninterruptible Power Supplies S • Motor Control Applications D S G N-Channel MOSFET ORDERING INFORMATION Package TO-247AC IRFP21N60LPbF SiHFP21N60L-E3 IRFP21N60L SiHFP21N60L Lead (Pb)-free SnPb ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 600 Gate-Source Voltage VGS ± 30 Continuous Drain Current VGS at 10 V TC = 25 °C TC = 100 °C Pulsed Drain Currenta ID UNIT V 21 13 A IDM 84 2.6 W/°C Single Pulse Avalanche Energyb EAS 420 mJ Repetitive Avalanche Currenta IAR 21 A Repetitive Avalanche Energya EAR 33 mJ Linear Derating Factor Maximum Power Dissipation TC = 25 °C Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Mounting Torque for 10 s 6-32 or M3 screw PD 330 W dV/dt 16 V/ns TJ, Tstg - 55 to + 150 300d °C 10 lbf · in 1.1 N·m Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Starting TJ = 25 °C, L = 1.9 mH, Rg = 25 , IAS = 21 A, dV/dt = 11 V/ns (see fig. 12a). c. ISD 21 A, dI/dt 530 A/μs, VDD VDS, TJ 150 °C. d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91206 S11-0446-Rev. C, 14-Mar-11 www.vishay.com 1 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFP21N60L, SiHFP21N60L Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain) SYMBOL TYP. MAX. UNIT RthJA RthCS RthJC 0.24 - 40 0.38 °C/W SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage VDS VGS = 0 V, ID = 250 μA 600 - - V VDS/TJ Reference to 25 °C, ID = 1 mA - 420 - mV/°C VGS(th) VDS = VGS, ID = 250 μA 3.0 - 5.0 V Gate-Source Leakage IGSS VGS = ± 30 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS Drain-Source On-State Resistance RDS(on) Forward Transconductance gfs VDS = 600 V, VGS = 0 V - - 50 μA VDS = 480 V, VGS = 0 V, TJ = 125 °C - - 2.0 mA - 0.27 0.32 VDS = 50 V, ID = 13 A 11 - - S ID = 13 Ab VGS = 10 V Dynamic Input Capacitance Ciss VGS = 0 V, - 4000 - Output Capacitance Coss VDS = 25 V, - 340 - f = 1.0 MHz, see fig. 5 - 29 - - 170 - - 130 - - - 150 - - 46 - - 64 - 0.63 - - 20 - - 58 - - 33 - - 10 - - - 21 - - 84 Reverse Transfer Capacitance Crss Effective Output Capacitance Coss eff. Effective Output Capacitance (Energy Related) Coss eff. (ER) Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time VGS = 0 V, VDS = 0 V to 480 Vc Rg td(on) tr td(off) tf VGS = 10 V ID = 21 A, VDS = 480 V see fig. 7 and 15b f = 1 MHz, open drain VDD = 300 V, ID = 21 A, Rg = 1.3 , VGS = 10 V, see fig. 11a and 11bb pF nC ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulsed Diode Forward Currenta ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Time IRRM MOSFET symbol showing the integral reverse p - n junction diode D A G S TJ = 25 °C, IS = 21 A, VGS = 0 Vb - - 1.5 TJ = 25 °C, IF = 21 A - 160 240 TJ = 125 °C, dI/dt = 100 A/μsb - 400 610 TJ = 25 °C, IF = 21 A, VGS = 0 Vb - 480 730 TJ = 125 °C, dI/dt = 100 A/μsb - 1540 2310 TJ = 25 °C - 5.3 7.9 V ns nC A Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 μs; duty cycle 2 %. c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising form 0 % to 80 % VDS. Coss eff. (ER) is a fixed capacitance that stores the same energy as Coss while VDS is rising from 0 % to 80 % VDS. www.vishay.com 2 Document Number: 91206 S11-0446-Rev. C, 14-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFP21N60L, SiHFP21N60L Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1000 1000 10 BOTTOM ID, Drain-to-Source Current (Α ) ID, Drain-to-Source Current (A) TOP 100 VGS 15V 12V 10V 8.0V 7.0V 6.5V 6.0V 5.5V 1 0.1 5.5V 0.01 100 T J = 150°C 10 1 T J = 25°C 0.1 VDS = 50V 20µs PULSE WIDTH 20µs PULSE WIDTH Tj = 25°C 0.001 0.01 0.1 1 10 100 1000 4 VDS, Drain-to-Source Voltage (V) 8 10 12 14 16 VGS , Gate-to-Source Voltage (V) Fig. 1 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics 100 3.0 BOTTOM 5.5V 1 0.1 20µs PULSE WIDTH Tj = 150°C 0.01 ID = 21A 2.5 VGS = 10V 2.0 (Normalized) 10 VGS 15V 12V 10V 8.0V 7.0V 6.5V 6.0V 5.5V RDS(on) , Drain-to-Source On Resistance TOP ID, Drain-to-Source Current (A) 6 1.5 1.0 0.5 0.0 0.1 1 10 100 -60 -40 -20 0 20 40 60 80 100 120 140 160 VDS, Drain-to-Source Voltage (V) T J , Junction Temperature (°C) Fig. 2 - Typical Output Characteristics Fig. 4 - Normalized On-Resistance vs. Temperature Document Number: 91206 S11-0446-Rev. C, 14-Mar-11 www.vishay.com 3 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFP21N60L, SiHFP21N60L Vishay Siliconix 12.0 100000 VGS = 0V, f = 1 MHZ Ciss = C gs + Cgd, C ds SHORTED VGS , Gate-to-Source Voltage (V) Crss = Cgd Coss = Cds + Cgd 10000 C, Capacitance(pF) ID= 21A Ciss 1000 Coss 100 Crss VDS= 120V 8.0 6.0 4.0 2.0 0.0 10 1 10 100 0 1000 20 VDS, Drain-to-Source Voltage (V) 40 60 80 100 120 Q G Total Gate Charge (nC) Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage 25 Fig. 7 - Typical Gate Charge vs. Gate-to-Source Voltage 100.00 ISD, Reverse Drain Current (A) 20 Energy (µJ) VDS= 480V VDS= 300V 10.0 15 10 5 T J = 150°C 10.00 T J = 25°C 1.00 VGS = 0V 0 0.10 0 100 200 300 400 500 600 700 VDS, Drain-to-Source Voltage (V) Fig. 6 - Typical Output Capacitance Stored Energy vs. VDS www.vishay.com 4 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VSD, Source-to-Drain Voltage (V) Fig. 8 - Typical Source-Drain Diode Forward Voltage Document Number: 91206 S11-0446-Rev. C, 14-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFP21N60L, SiHFP21N60L Vishay Siliconix ID, Drain-to-Source Current (A) 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) RD VDS 100 VGS D.U.T. RG 10 100µsec + - VDD 10 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % 1msec 1 Tc = 25°C Tj = 150°C Single Pulse Fig. 11a - Switching Time Test Circuit 10msec 0.1 1 10 100 1000 10000 VDS, Drain-to-Source Voltage (V) Fig. 9 - Maximum Safe Operating Area 25 VDS 90 % ID, Drain Current (A) 20 10 % VGS 15 td(on) td(off) tf tr 10 Fig. 11b - Switching Time Waveforms 5 0 25 50 75 100 125 150 T C , Case Temperature (°C) Fig. 10 - Maximum Drain Current vs. Case Temperature Thermal Response ( Z thJC ) 1 D = 0.50 0.1 0.20 0.10 0.05 0.01 0.02 0.01 P DM t1 0.001 t2 SINGLE PULSE ( THERMAL RESPONSE ) Notes: 1. Duty factor D = 2. Peak T t1/ t 2 J = P DM x Z thJC +T C 0.0001 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig. 12 - Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91206 S11-0446-Rev. C, 14-Mar-11 www.vishay.com 5 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFP21N60L, SiHFP21N60L Vishay Siliconix 5.0 VDS VGS(th) Gate threshold Voltage (V) tp 4.0 ID = 250µA 3.0 IAS Fig. 14c - Unclamped Inductive Waveforms 2.0 Current regulator Same type as D.U.T. 1.0 -75 -50 -25 0 25 50 75 100 125 150 50 kΩ 12 V T J , Temperature ( °C ) 0.2 µF 0.3 µF + Fig. 13 - Threshold Voltage vs. Temperature D.U.T. EAS , Single Pulse Avalanche Energy (mJ) 800 600 VDS VGS ID TOP 9.4A 13A BOTTOM 21A 700 - 3 mA IG ID Current sampling resistors 500 Fig. 15a - Gate Charge Test Circuit 400 300 200 QG VGS 100 QGS 0 25 50 75 100 125 QGD 150 Starting T J , Junction Temperature (°C) VG Fig. 14a - Maximum Avalanche Energy vs. Drain Current Charge Fig. 15b - Basic Gate Charge Waveform 15 V L VDS D.U.T RG IAS 20 V tp Driver + A - VDD A 0.01 Ω Fig. 14b - Unclamped Inductive Test Circuit www.vishay.com 6 Document Number: 91206 S11-0446-Rev. C, 14-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFP21N60L, SiHFP21N60L Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit + D.U.T. Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + - - Rg • • • • + dV/dt controlled by Rg Driver same type as D.U.T. ISD controlled by duty factor “D” D.U.T. - device under test + - VDD Driver gate drive P.W. Period D= P.W. Period VGS = 10 Va D.U.T. lSD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt Re-applied voltage Inductor current VDD Body diode forward drop Ripple ≤ 5 % ISD Note a. VGS = 5 V for logic level devices Fig. 16 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91206. Document Number: 91206 S11-0446-Rev. C, 14-Mar-11 www.vishay.com 7 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix TO-247AC (High Voltage) A A 4 E B 3 R/2 E/2 7 ØP Ø k M DBM A2 S (Datum B) ØP1 A D2 Q 4 4 2xR (2) D1 D 1 2 4 D 3 Thermal pad 5 L1 C L A See view B 2 x b2 3xb 0.10 M C A M 4 E1 0.01 M D B M View A - A C 2x e A1 b4 Planting Lead Assignments 1. Gate 2. Drain 3. Source 4. Drain D DE (b1, b3, b5) Base metal E C (c) C c1 (b, b2, b4) (4) Section C - C, D - D, E - E View B MILLIMETERS DIM. MIN. MAX. A 4.58 5.31 A1 2.21 2.59 A2 1.17 2.49 b 0.99 1.40 b1 0.99 1.35 b2 1.53 2.39 b3 1.65 2.37 b4 2.42 3.43 b5 2.59 3.38 c 0.38 0.86 c1 0.38 0.76 D 19.71 20.82 D1 13.08 ECN: X13-0103-Rev. D, 01-Jul-13 DWG: 5971 INCHES MIN. MAX. 0.180 0.209 0.087 0.102 0.046 0.098 0.039 0.055 0.039 0.053 0.060 0.094 0.065 0.093 0.095 0.135 0.102 0.133 0.015 0.034 0.015 0.030 0.776 0.820 0.515 - DIM. D2 E E1 e Øk L L1 N ØP Ø P1 Q R S MILLIMETERS MIN. MAX. 0.51 1.30 15.29 15.87 13.72 5.46 BSC 0.254 14.20 16.25 3.71 4.29 7.62 BSC 3.51 3.66 7.39 5.31 5.69 4.52 5.49 5.51 BSC INCHES MIN. MAX. 0.020 0.051 0.602 0.625 0.540 0.215 BSC 0.010 0.559 0.640 0.146 0.169 0.300 BSC 0.138 0.144 0.291 0.209 0.224 0.178 0.216 0.217 BSC Notes 1. Dimensioning and tolerancing per ASME Y14.5M-1994. 2. Contour of slot optional. 3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body. 4. Thermal pad contour optional with dimensions D1 and E1. 5. Lead finish uncontrolled in L1. 6. Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154"). 7. Outline conforms to JEDEC outline TO-247 with exception of dimension c. 8. Xian and Mingxin actually photo. Revision: 01-Jul-13 Document Number: 91360 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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