IRFP23N50L, SiHFP23N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications 500 RDS(on) () VGS = 10 V 0.190 Qg (Max.) (nC) 150 Qgs (nC) 44 Qgd (nC) 72 Configuration • Lower Gate Charge Results in Simpler Drive Requirements Available RoHS* COMPLIANT • Enhanced dV/dt Capabilities Offer Improved Ruggedness • Higher Gate Voltage Threshold Offers Improved Noise Immunity Single D • Compliant to RoHS Directive 2002/95/EC TO-247AC APPLICATIONS • Zero Voltage Switching SMPS • Telecom and Server Power Supplies G • Uninterruptible Power Supplies S • Motor Control Applications D S G N-Channel MOSFET ORDERING INFORMATION Package TO-247AC IRFP23N50LPbF Lead (Pb)-free SiHFP23N50L-E3 IRFP23N50L SnPb SiHFP23N50L ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 500 Gate-Source Voltage VGS ± 30 Continuous Drain Current VGS at 10 V TC = 25 °C TC = 100 °C Pulsed Drain Currenta ID UNIT V 23 15 A IDM 92 2.9 W/°C Single Pulse Avalanche Energyb EAS 410 mJ Repetitive Avalanche Currenta IAR 23 A EAR 37 mJ PD 370 W dV/dt 21 V/ns TJ, Tstg - 55 to + 150 Linear Derating Factor Repetitive Avalanche Energya Maximum Power Dissipation TC = 25 °C Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Mounting Torque for 10 s 6-32 or M3 screw 300d °C 10 lbf · in 1.1 N·m Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Starting TJ = 25 °C, L = 1.5 mH, Rg = 25 , IAS = 23 A (see fig. 12). c. ISD 23 A, dI/dt 650 A/μs, VDD VDS, TJ 150 °C. d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91209 S11-0445-Rev. B, 21-Mar-11 www.vishay.com 1 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFP23N50L, SiHFP23N50L Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain) SYMBOL TYP. MAX. UNIT RthJA RthCS RthJC 0.24 - 40 0.34 °C/W SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage VDS VGS = 0 V, ID = 250 μA 500 - - V VDS/TJ Reference to 25 °C, ID = 1 mAd - 0.27 - V/°C VGS(th) VDS = VGS, ID = 250 μA 3.0 - 5.0 V Gate-Source Leakage IGSS VGS = ± 30 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS Drain-Source On-State Resistance Forward Transconductance RDS(on) gfs VDS = 500 V, VGS = 0 V - - 50 μA VDS = 400 V, VGS = 0 V, TJ = 125 °C - - 2.0 mA - 0.190 0.235 VDS = 50 V, ID = 14 Ab 12 - - S ID = 14 Ab VGS = 10 V Dynamic Input Capacitance Ciss VGS = 0 V, - 3600 - Output Capacitance Coss VDS = 25 V, - 380 - Crss f = 1.0 MHz, see fig. 5 - Reverse Transfer Capacitance Output Capacitance Effective Output Capacitance Effective Output Capacitance (Energy Related) Internal Gate Resistance Coss Coss eff. Coss eff. (ER) RG Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) Rise Time Turn-Off Delay Time Fall Time VGS = 0 V tr td(off) - 37 VDS = 1.0 V , f = 1.0 MHz - 4800 - VDS = 400 V , f = 1.0 MHz - 100 - VDS = 0 V to 400 Vc - 220 - Vd - 160 - - 1.2 - - - 150 VDS = 0 V to 400 f = 1 MHz, open drain VGS = 10 V ID = 23 A, VDS = 400 V see fig. 6 and 13b VDD = 250 V, ID = 23 A Rg = 6.0, VGS = 10 V see fig. 10b tf - - 44 - - 72 - 26 - - 94 - - 53 - - 45 - - - 23 - - 92 pF nC ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulsed Diode Forward Currenta ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Current Forward Turn-On Time trr Qrr IRRM ton MOSFET symbol showing the integral reverse p - n junction diode D A G S TJ = 25 °C, IS = 14 A, VGS = 0 Vb TJ = 25 °C TJ = 125 °C TJ = 25 °C IF = 23 A, dI/dt = 100 A/μsb TJ =1 25 °C TJ = 25 °C - - 1.5 - 170 250 - 220 330 - 560 840 - 980 1500 - 7.6 11 V ns μC A Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 μs; duty cycle 2 %. c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising fom 0 % to 80 % VDS. d. Coss eff. (ER) is a fixed capacitance that stores the same energy time as Coss while VDS is rising fom 0 % to 80 % VDS. www.vishay.com 2 Document Number: 91209 S11-0445-Rev. B, 21-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFP23N50L, SiHFP23N50L Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 1000.00 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 10 ID, Drain-to Source Current (A) ID, Drain-to-Source Current (A) TOP 1 0.1 4.5 V 0.01 TJ = 25 °C 100.00 TJ = 150 °C 10.00 20 µs PULSE WIDTH 20µs PULSE WIDTH Tj = 25 °C 0.001 TJ = 150°C 1.00 0.1 1 10 100 1.0 6.0 VDS, Drain-to-Source Voltage (V) Fig. 1 - Typical Output Characteristics 100 3.0 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V RDS(ON), Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current (A) 16.0 Fig. 3 - Typical Transfer Characteristics ID = 23 A TOP 10 11.0 VGS, Gate-to-Source Voltage (V) 1 4,5 V 20µs PULSE WIDTH Tj = 150 °C 2.5 2.0 1.5 1.0 0.5 VGS = 10 V 0.1 0.0 1 10 VDS, Drain-to-Source Voltage (V) Fig. 2 - Typical Output Characteristics Document Number: 91209 S11-0445-Rev. B, 21-Mar-11 100 -60 -40 -20 0 20 40 60 TJ, Junction Temperature 80 100 120 140 160 (°C) Fig. 4 - Normalized On-Resistance vs. Temperature www.vishay.com 3 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFP23N50L, SiHFP23N50L Vishay Siliconix 1000 VGS = 0 V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd 10000 OPERATION IN THIS AREA LIMITED BY RDS(ON) ID, Drain Current (A) C, Capacitance (pF) 100000 Ciss 1000 Coss 100 10us 100us 10 100 1ms TC = 25 °C TJ = 150 °C Single Pulse Crss 10 1 1 10 100 1000 1000 100 10 10000 VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 7 - Maximum Safe Operating Area 25 VGS, Gate-to-Source Voltage (V) 12 20 Energy (µJ) 10ms 15 10 5 0 ID = 23 VDS = 400 V VDS = 250 V VDS = 100 V 10 7 5 2 0 0 100 200 300 400 500 600 VDS , Drain-to-Source Voltage (V) Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 0 24 48 72 96 120 QG, Total Gate Charge (nC) Fig. 8 - Typical Gate Charge vs. Gate-to-Source Voltage Document Number: 91209 S11-0445-Rev. B, 21-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFP23N50L, SiHFP23N50L Vishay Siliconix 100.00 RD ISD, Reverse Drain Current (A) VDS VGS TJ = 150 °C D.U.T. RG 10.00 + - VDD 10 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % TJ = 25 °C 1.00 Fig. 11a - Switching Time Test Circuit VGS = 0 V VDS 0.10 1.5 1.0 0.5 0.0 90 % 2.0 VSD, Source-to-Drain Voltage (V) Fig. 9 - Typical Source-Drain Diode Forward Voltage 10 % VGS 25 td(on) td(off) tf tr ID, Drain Current (A) 20 Fig. 11b - Switching Time Waveforms 15 10 5 0 25 50 75 100 TC, Case Temperature 125 150 (°C) Fig. 10 - Maximum Drain Current vs. Case Temperature (Z thJC) 10 1 Thermal Response D = 0.50 0.1 0.20 0.10 PDM 0.05 0.01 0.02 0.01 t1 SINGLE PULSE (THERMAL RESPONSE) t2 Notes: 1. Duty factor D = t1 / t2 2. PeakT J = P DM x Z thJC + T C 0.001 0.00001 0.0001 0.001 0.01 0.1 1 t1, Rectangular Pulse Duration (sec) Fig. 12 - Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91209 S11-0445-Rev. B, 21-Mar-11 www.vishay.com 5 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFP23N50L, SiHFP23N50L Vishay Siliconix VDS VGS(th) Gate Threshold Voltage (V) 5.0 tp 4.5 4.0 ID = 250 µA 3.5 3.0 IAS 2.5 Fig. 15b - Unclamped Inductive Waveforms 2.0 1.5 Current regulator Same type as D.U.T. 1.0 - 75 - 50 - 25 0 25 50 75 100 125 150 50 kΩ TJ, Temperature (°C) 12 V 0.2 µF Fig. 13 - Threshold Voltage vs. Temperature 0.3 µF + D.U.T. EAS, Single Pulse Avalanche Energy (mJ) 750 ID 10A 15A BOTTOM 23A VDS VGS TOP 600 - 3 mA IG ID Current sampling resistors 450 Fig. 16a - Gate Charge Test Circuit 300 150 QG 10 V 0 50 25 75 150 125 100 Starting T , Junction Temperature QGS (°C) Fig. 14 - Maximum Avalanche Energy s. Drain Current QGD VG Charge 15 V L VDS D.U.T RG IAS 20 V tp Fig. 16b - Basic Gate Charge Waveform Driver + - VDD A 0.01Ω Fig. 15a - Unclamped Inductive Test Circuit www.vishay.com 6 Document Number: 91209 S11-0445-Rev. B, 21-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFP23N50L, SiHFP23N50L Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit + D.U.T. Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + - - Rg • • • • + dV/dt controlled by Rg Driver same type as D.U.T. ISD controlled by duty factor “D” D.U.T. - device under test + - VDD Driver gate drive P.W. Period D= P.W. Period VGS = 10 Va D.U.T. lSD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt Re-applied voltage Inductor current VDD Body diode forward drop Ripple ≤ 5 % ISD Note a. VGS = 5 V for logic level devices Fig. 17 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91209. Document Number: 91209 S11-0445-Rev. B, 21-Mar-11 www.vishay.com 7 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix TO-247AC (High Voltage) A A 4 E B 3 R/2 E/2 7 ØP Ø k M DBM A2 S (Datum B) ØP1 A D2 Q 4 4 2xR (2) D1 D 1 2 4 D 3 Thermal pad 5 L1 C L A See view B 2 x b2 3xb 0.10 M C A M 4 E1 0.01 M D B M View A - A C 2x e A1 b4 Planting Lead Assignments 1. Gate 2. Drain 3. Source 4. Drain D DE (b1, b3, b5) Base metal E C (c) C c1 (b, b2, b4) (4) Section C - C, D - D, E - E View B MILLIMETERS DIM. MIN. MAX. A 4.58 5.31 A1 2.21 2.59 A2 1.17 2.49 b 0.99 1.40 b1 0.99 1.35 b2 1.53 2.39 b3 1.65 2.37 b4 2.42 3.43 b5 2.59 3.38 c 0.38 0.86 c1 0.38 0.76 D 19.71 20.82 D1 13.08 ECN: X13-0103-Rev. D, 01-Jul-13 DWG: 5971 INCHES MIN. MAX. 0.180 0.209 0.087 0.102 0.046 0.098 0.039 0.055 0.039 0.053 0.060 0.094 0.065 0.093 0.095 0.135 0.102 0.133 0.015 0.034 0.015 0.030 0.776 0.820 0.515 - DIM. D2 E E1 e Øk L L1 N ØP Ø P1 Q R S MILLIMETERS MIN. MAX. 0.51 1.30 15.29 15.87 13.72 5.46 BSC 0.254 14.20 16.25 3.71 4.29 7.62 BSC 3.51 3.66 7.39 5.31 5.69 4.52 5.49 5.51 BSC INCHES MIN. MAX. 0.020 0.051 0.602 0.625 0.540 0.215 BSC 0.010 0.559 0.640 0.146 0.169 0.300 BSC 0.138 0.144 0.291 0.209 0.224 0.178 0.216 0.217 BSC Notes 1. Dimensioning and tolerancing per ASME Y14.5M-1994. 2. Contour of slot optional. 3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body. 4. Thermal pad contour optional with dimensions D1 and E1. 5. Lead finish uncontrolled in L1. 6. Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154"). 7. Outline conforms to JEDEC outline TO-247 with exception of dimension c. 8. Xian and Mingxin actually photo. Revision: 01-Jul-13 Document Number: 91360 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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