SiJ462DP Vishay Siliconix N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () Max. ID (A) 0.0080 at VGS = 10 V 46.5 0.0100 at VGS = 6 V 41.6 0.0125 at VGS = 4.5 V 37.2 60 Qg (Typ.) 9.3 nC APPLICATIONS PowerPAK® SO-8L m 5m 6.1 • Primary Side Switching • Synchronous Rectification • DC/DC Converters • Boost Converters 5.1 3m m • DC/AC Inverters D 4 G S • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 D G 3 S S 2 S 1 Bottom View N-Channel MOSFET Ordering Information: SiJ462DP-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Symbol VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C ID IDM Pulsed Drain Current (t = 100 µs) Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS Single Pulse Avalanche Current Single Pulse Avalanche Energy L =0.1 mH IAS EAS Maximum Power Dissipation TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C PD Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e TJ, Tstg Limit 60 ± 20 Unit V 46.5 37.2 18.6b, c 14.9b, c 100 A 28.3 4.5b, c 20 20 31.2 20 5b, c 3.2b, c - 55 to 150 260 mJ W °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit RthJA t 10 s 20 25 Maximum Junction-to-Ambienta, b °C/W RthJC Steady State Maximum Junction-to-Case (Drain) 3 4 Notes: a. Maximum under steady state conditions is 70 °C/W. b.Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8L is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 62871 For technical questions, contact: [email protected] www.vishay.com S13-1385-Rev. A, 17-Jun-13 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiJ462DP Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 250 µA 60 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VDS/TJ V 97 ID = 250 µA mV/°C VGS(th) Temperature Coefficient VGS(th)/TJ Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 2.5 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 60 V, VGS = 0 V 1 VDS = 60 V, VGS = 0 V, TJ = 55 °C 10 On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea RDS(on) gfs VDS 5 V, VGS = 10 V - 5.1 1.4 30 µA A VGS = 10 V, ID = 20 A 0.0065 0.0080 VGS = 6 V, ID = 15 A 0.0080 0.0100 VGS = 4.5 V, ID = 10 A 0.0100 0.0125 VDS = 10 V, ID = 20 A 80 S b Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs 1400 VDS = 30 V, VGS = 0 V, f = 1 MHz 45 VDS = 30 V, VGS = 10 V, ID = 10 A 20.8 32 VDS = 30 V, VGS = 6 V, ID = 10 A 12.1 18.5 9.3 14 VDS = 30 V, VGS = 4.5 V, ID = 10 A 4.1 23.5 36 2.3 3.7 10 20 10 20 Gate-Drain Charge Qgd Output Charge Qoss VDS = 30 V, VGS = 0 V Rg f = 1 MHz Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(off) VDD = 30 V, RL = 3 ID 10 A, VGEN = 10 V, Rg = 1 0.8 24 48 tf 8 16 td(on) 25 50 50 100 17 34 9 18 tr td(off) nC 2.3 td(on) tr pF 525 VDD = 30 V, RL = 3 ID 10 A, VGEN = 4.5 V, Rg = 1 tf ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Current (tp = 100 µs) ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb TC = 25 °C 28.3 100 IS = 5 A IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C A 0.77 1.1 V 25 50 ns 16 32 nC 14 11 ns Notes: a. Pulse test; pulse width 300 µs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 62871 For technical questions, contact: [email protected] www.vishay.com S13-1385-Rev. A, 17-Jun-13 2 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiJ462DP Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 100 VGS = 10 V thru 5 V 80 VGS = 4 V ID - Drain Current (A) ID - Drain Current (A) 80 60 40 60 40 20 20 TC = 25 °C TC = 125 °C VGS = 3 V VGS = 2 V 0 0.5 1.0 1.5 2.0 TC = - 55 °C 0 0.0 2.5 1.4 2.8 5.6 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.0200 1600 0.0170 1280 0.0140 VGS = 4.5 V 0.0110 VGS = 6.0 V 7.0 Ciss 960 Coss 640 320 0.0080 VGS = 10 V Crss 0 0.0050 0 20 40 60 80 0 100 12 ID - Drain Current (A) 24 36 48 60 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 2.0 10 8 RDS(on) - On-Resistance (Normalized) ID = 10 A VGS - Gate-to-Source Voltage (V) 4.2 VDS - Drain-to-Source Voltage (V) C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 0.0 VDS = 30 V 6 VDS = 20 V VDS = 40 V 4 2 ID = 20 A VGS = 10 V 1.7 1.4 VGS = 4.5 V 1.1 0.8 0.5 0 0 5 10 15 20 25 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature Document Number: 62871 For technical questions, contact: [email protected] www.vishay.com S13-1385-Rev. A, 17-Jun-13 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiJ462DP Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 0.050 ID = 20 A 0.040 TJ = 150 °C RDS(on) - On-Resistance (Ω) IS - Source Current (A) 10 TJ = 25 °C 1 0.1 0.01 0.001 0.030 0.020 TJ = 125 °C 0.010 TJ = 25 °C 0.000 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 0.5 500 0.2 400 - 0.1 300 ID = 5 mA - 0.4 - 1.0 - 25 0 25 50 8 10 200 100 ID = 250 μA - 50 6 On-Resistance vs. Gate-to-Source Voltage Power (W) VGS(th) - Variance (V) Source-Drain Diode Forward Voltage - 0.7 4 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) 75 100 125 150 0 0.001 0.01 0.1 1 10 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 1000 IDM Limited ID - Drain Current (A) 100 100 μs ID Limited 10 1 ms 1 10 ms Limited by RDS(on)* 100 ms 1s 0.1 TA = 25 °C Single Pulse 0.01 0.01 10 s BVDSS Limited DC 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient Document Number: 62871 For technical questions, contact: [email protected] www.vishay.com S13-1385-Rev. A, 17-Jun-13 4 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiJ462DP Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 55 ID - Drain Current (A) 44 33 22 11 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) 40 2.5 32 2.0 24 1.5 Power (W) Power (W) Current Derating* 16 8 1.0 0.5 0 0.0 0 25 50 75 100 TC - Case Temperature (°C) Power, Junction-to-Case 125 150 0 25 50 75 100 125 150 TA - Ambient Temperature (°C) Power, Junction-to-Ambient * The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 62871 For technical questions, contact: [email protected] www.vishay.com S13-1385-Rev. A, 17-Jun-13 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiJ462DP Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM t1 t2 1. Duty Cycle, D = 0.05 2. Per Unit Base = R thJA = 70 °C/W 0.02 3. T JM - TA = PDMZthJA(t) Single Pulse 0.01 0.0001 t1 t2 0.001 0.01 4. Surface Mounted 0.1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.0001 Single Pulse 0.001 0.01 0.1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?62871. Document Number: 62871 For technical questions, contact: [email protected] www.vishay.com S13-1385-Rev. A, 17-Jun-13 6 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix PowerPAK® SO-8L Case Outline for Non-Al Parts W E1 E E2 W2 W3 W1 b2 D2 b b1 L L1 L1 A1 e θ D1 D b3 b4 0.25 gauge line Topside view Backside view (single) E2 W2 C A W3 W1 F K D3 D3 D2 b3 b4 Backside view (dual) Revision: 16-May-16 Document Number: 69003 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com DIM. Vishay Siliconix MILLIMETERS INCHES MIN. NOM. MAX. MIN. NOM. MAX. A 1.00 1.07 1.14 0.039 0.042 0.045 A1 0.00 - 0.127 0.00 - 0.005 b 0.33 0.41 0.48 0.013 0.016 0.019 b1 0.44 0.51 0.58 0.017 0.020 0.023 b2 4.80 4.90 5.00 0.189 0.193 0.197 b3 0.094 b4 0.004 0.47 0.019 c 0.20 0.25 0.30 0.008 0.010 0.012 D 5.00 5.13 5.25 0.197 0.202 0.207 D1 4.80 4.90 5.00 0.189 0.193 0.197 D2 3.86 3.96 4.06 0.152 0.156 0.160 D3 1.63 1.73 1.83 0.064 0.068 0.072 e 1.27 BSC 0.050 BSC E 6.05 6.15 6.25 0.238 0.242 0.246 E1 4.27 4.37 4.47 0.168 0.172 0.176 E2 3.18 3.28 3.38 0.125 0.129 0.133 F - - 0.15 - - 0.006 L 0.62 0.72 0.82 0.024 0.028 0.032 L1 0.92 1.07 1.22 0.036 0.042 0.048 K 0.51 0.020 W 0.23 0.009 W1 0.41 0.016 W2 2.82 0.111 W3 2.96 0.117 0° - 10° 0° - 10° ECN: T16-0221-Rev. D, 16-May-16 DWG: 5976 Note • Millimeters will gover Revision: 16-May-16 Document Number: 69003 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 PAD Pattern www.vishay.com Vishay Siliconix RECOMMENDED MINIMUM PAD FOR PowerPAK® SO-8L SINGLE 5.000 (0.197) 0.510 (0.020) 2.310 (0.091) 4.061 (0.160) 0.595 (0.023) 6.250 (0.246) 8.250 (0.325) 3.630 (0.143) 0.610 (0.024) 0.410 (0.016) 2.715 (0.107) 0.860 (0.034) 1.291 (0.051) 0.710 (0.028) 0.820 (0.032) 1.905 (0.075) 1.270 (0.050) 7.250 (0.285) Recommended Minimum Pads Dimensions in mm (inches) Revision: 07-Feb-12 1 Document Number: 63818 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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