SiJ462DP Datasheet

SiJ462DP
Vishay Siliconix
N-Channel 60 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
RDS(on) () Max.
ID (A)
0.0080 at VGS = 10 V
46.5
0.0100 at VGS = 6 V
41.6
0.0125 at VGS = 4.5 V
37.2
60
Qg (Typ.)
9.3 nC
APPLICATIONS
PowerPAK® SO-8L
m
5m
6.1
• Primary Side Switching
• Synchronous Rectification
• DC/DC Converters
• Boost Converters
5.1
3m
m
• DC/AC Inverters
D
4
G
S
• TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
D
G
3
S
S
2
S
1
Bottom View
N-Channel MOSFET
Ordering Information:
SiJ462DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Symbol
VDS
VGS
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
ID
IDM
Pulsed Drain Current (t = 100 µs)
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L =0.1 mH
IAS
EAS
Maximum Power Dissipation
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
PD
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
TJ, Tstg
Limit
60
± 20
Unit
V
46.5
37.2
18.6b, c
14.9b, c
100
A
28.3
4.5b, c
20
20
31.2
20
5b, c
3.2b, c
- 55 to 150
260
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
RthJA
t  10 s
20
25
Maximum Junction-to-Ambienta, b
°C/W
RthJC
Steady State
Maximum Junction-to-Case (Drain)
3
4
Notes:
a. Maximum under steady state conditions is 70 °C/W.
b.Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8L is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 62871
For technical questions, contact: [email protected]
www.vishay.com
S13-1385-Rev. A, 17-Jun-13
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiJ462DP
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = 250 µA
60
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VDS/TJ
V
97
ID = 250 µA
mV/°C
VGS(th) Temperature Coefficient
VGS(th)/TJ
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
2.5
V
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 60 V, VGS = 0 V
1
VDS = 60 V, VGS = 0 V, TJ = 55 °C
10
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
Forward Transconductancea
RDS(on)
gfs
VDS 5 V, VGS = 10 V
- 5.1
1.4
30
µA
A
VGS = 10 V, ID = 20 A
0.0065
0.0080
VGS = 6 V, ID = 15 A
0.0080
0.0100
VGS = 4.5 V, ID = 10 A
0.0100
0.0125
VDS = 10 V, ID = 20 A
80

S
b
Dynamic
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
1400
VDS = 30 V, VGS = 0 V, f = 1 MHz
45
VDS = 30 V, VGS = 10 V, ID = 10 A
20.8
32
VDS = 30 V, VGS = 6 V, ID = 10 A
12.1
18.5
9.3
14
VDS = 30 V, VGS = 4.5 V, ID = 10 A
4.1
23.5
36
2.3
3.7
10
20
10
20
Gate-Drain Charge
Qgd
Output Charge
Qoss
VDS = 30 V, VGS = 0 V
Rg
f = 1 MHz
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
td(off)
VDD = 30 V, RL = 3 
ID  10 A, VGEN = 10 V, Rg = 1 
0.8
24
48
tf
8
16
td(on)
25
50
50
100
17
34
9
18
tr
td(off)
nC
2.3
td(on)
tr
pF
525
VDD = 30 V, RL = 3 
ID  10 A, VGEN = 4.5 V, Rg = 1 
tf

ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulse Diode Forward Current (tp = 100 µs)
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
TC = 25 °C
28.3
100
IS = 5 A
IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C
A
0.77
1.1
V
25
50
ns
16
32
nC
14
11
ns
Notes:
a. Pulse test; pulse width  300 µs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 62871
For technical questions, contact: [email protected]
www.vishay.com
S13-1385-Rev. A, 17-Jun-13
2
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiJ462DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
100
VGS = 10 V thru 5 V
80
VGS = 4 V
ID - Drain Current (A)
ID - Drain Current (A)
80
60
40
60
40
20
20
TC = 25 °C
TC = 125 °C
VGS = 3 V
VGS = 2 V
0
0.5
1.0
1.5
2.0
TC = - 55 °C
0
0.0
2.5
1.4
2.8
5.6
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.0200
1600
0.0170
1280
0.0140
VGS = 4.5 V
0.0110
VGS = 6.0 V
7.0
Ciss
960
Coss
640
320
0.0080
VGS = 10 V
Crss
0
0.0050
0
20
40
60
80
0
100
12
ID - Drain Current (A)
24
36
48
60
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
2.0
10
8
RDS(on) - On-Resistance (Normalized)
ID = 10 A
VGS - Gate-to-Source Voltage (V)
4.2
VDS - Drain-to-Source Voltage (V)
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
0.0
VDS = 30 V
6
VDS = 20 V
VDS = 40 V
4
2
ID = 20 A
VGS = 10 V
1.7
1.4
VGS = 4.5 V
1.1
0.8
0.5
0
0
5
10
15
20
25
- 50
- 25
0
25
50
75
100
125
150
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 62871
For technical questions, contact: [email protected]
www.vishay.com
S13-1385-Rev. A, 17-Jun-13
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiJ462DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
0.050
ID = 20 A
0.040
TJ = 150 °C
RDS(on) - On-Resistance (Ω)
IS - Source Current (A)
10
TJ = 25 °C
1
0.1
0.01
0.001
0.030
0.020
TJ = 125 °C
0.010
TJ = 25 °C
0.000
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
2
0.5
500
0.2
400
- 0.1
300
ID = 5 mA
- 0.4
- 1.0
- 25
0
25
50
8
10
200
100
ID = 250 μA
- 50
6
On-Resistance vs. Gate-to-Source Voltage
Power (W)
VGS(th) - Variance (V)
Source-Drain Diode Forward Voltage
- 0.7
4
VGS - Gate-to-Source Voltage (V)
VSD - Source-to-Drain Voltage (V)
75
100
125
150
0
0.001
0.01
0.1
1
10
TJ - Temperature (°C)
Time (s)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
1000
IDM Limited
ID - Drain Current (A)
100
100 μs
ID Limited
10
1 ms
1
10 ms
Limited by RDS(on)*
100 ms
1s
0.1
TA = 25 °C
Single Pulse
0.01
0.01
10 s
BVDSS Limited
DC
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
Document Number: 62871
For technical questions, contact: [email protected]
www.vishay.com
S13-1385-Rev. A, 17-Jun-13
4
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiJ462DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
55
ID - Drain Current (A)
44
33
22
11
0
0
25
50
75
100
125
150
TC - Case Temperature (°C)
40
2.5
32
2.0
24
1.5
Power (W)
Power (W)
Current Derating*
16
8
1.0
0.5
0
0.0
0
25
50
75
100
TC - Case Temperature (°C)
Power, Junction-to-Case
125
150
0
25
50
75
100
125
150
TA - Ambient Temperature (°C)
Power, Junction-to-Ambient
* The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 62871
For technical questions, contact: [email protected]
www.vishay.com
S13-1385-Rev. A, 17-Jun-13
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiJ462DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
PDM
t1
t2
1. Duty Cycle, D =
0.05
2. Per Unit Base = R thJA = 70 °C/W
0.02
3. T JM - TA = PDMZthJA(t)
Single Pulse
0.01
0.0001
t1
t2
0.001
0.01
4. Surface Mounted
0.1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.0001
Single Pulse
0.001
0.01
0.1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?62871.
Document Number: 62871
For technical questions, contact: [email protected]
www.vishay.com
S13-1385-Rev. A, 17-Jun-13
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
PowerPAK® SO-8L Case Outline
for Non-Al Parts
W
E1
E
E2
W2
W3
W1
b2
D2
b
b1
L
L1
L1
A1
e
θ
D1
D
b3
b4
0.25 gauge line
Topside view
Backside view (single)
E2
W2
C
A
W3
W1
F
K
D3
D3
D2
b3
b4
Backside view (dual)
Revision: 16-May-16
Document Number: 69003
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
DIM.
Vishay Siliconix
MILLIMETERS
INCHES
MIN.
NOM.
MAX.
MIN.
NOM.
MAX.
A
1.00
1.07
1.14
0.039
0.042
0.045
A1
0.00
-
0.127
0.00
-
0.005
b
0.33
0.41
0.48
0.013
0.016
0.019
b1
0.44
0.51
0.58
0.017
0.020
0.023
b2
4.80
4.90
5.00
0.189
0.193
0.197
b3
0.094
b4
0.004
0.47
0.019
c
0.20
0.25
0.30
0.008
0.010
0.012
D
5.00
5.13
5.25
0.197
0.202
0.207
D1
4.80
4.90
5.00
0.189
0.193
0.197
D2
3.86
3.96
4.06
0.152
0.156
0.160
D3
1.63
1.73
1.83
0.064
0.068
0.072
e
1.27 BSC
0.050 BSC
E
6.05
6.15
6.25
0.238
0.242
0.246
E1
4.27
4.37
4.47
0.168
0.172
0.176
E2
3.18
3.28
3.38
0.125
0.129
0.133
F
-
-
0.15
-
-
0.006
L
0.62
0.72
0.82
0.024
0.028
0.032
L1
0.92
1.07
1.22
0.036
0.042
0.048
K
0.51
0.020
W
0.23
0.009
W1
0.41
0.016
W2
2.82
0.111
W3
2.96
0.117

0°
-
10°
0°
-
10°
ECN: T16-0221-Rev. D, 16-May-16
DWG: 5976
Note
• Millimeters will gover
Revision: 16-May-16
Document Number: 69003
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PAD Pattern
www.vishay.com
Vishay Siliconix
RECOMMENDED MINIMUM PAD FOR PowerPAK® SO-8L SINGLE
5.000
(0.197)
0.510
(0.020)
2.310
(0.091)
4.061
(0.160)
0.595
(0.023)
6.250
(0.246)
8.250
(0.325)
3.630
(0.143)
0.610
(0.024)
0.410
(0.016)
2.715
(0.107)
0.860
(0.034)
1.291
(0.051)
0.710
(0.028)
0.820
(0.032)
1.905
(0.075)
1.270
(0.050)
7.250
(0.285)
Recommended Minimum Pads
Dimensions in mm (inches)
Revision: 07-Feb-12
1
Document Number: 63818
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
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Disclaimer
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requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
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Revision: 02-Oct-12
1
Document Number: 91000