SiHG16N50C Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) at TJ max. • Low Figure-of-Merit Ron x Qg 560 V RDS(on) (Ω) VGS = 10 V 0.38 Qg (Max.) (nC) • 100 % Avalanche Tested 68 Qgs (nC) • Gate Charge Improved 17.6 Qgd (nC) • Trr/Qrr Improved 21.8 Configuration Single • Compliant to RoHS Directive 2002/95/EC D TO-247AC G S D G S N-Channel MOSFET ORDERING INFORMATION Package TO-247AC Lead (Pb)-free SiHG16N50C-E3 ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 500 Gate-Source Voltage VGS ± 30 Continuous Drain Current (TJ = 150 °C)a VGS at 10 V TC = 25 °C TC = 100 °C Pulsed Drain Currentc ID Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d for 10 s V 16 10 A IDM 40 2 W/°C EAS 320 mJ PD 250 W TJ, Tstg - 55 to + 150 Linear Derating Factor Single Pulse Avalanche Energyb UNIT 300 °C Notes a. Limited by maximum junction temperature. b. VDD = 50 V, starting TJ = 25 °C, L = 2.5 mH, Rg = 25 Ω, IAS = 16 A. c. Repetitive rating; pulse width limited by maximum junction temperature. d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91418 S10-1355-Rev. A, 14-Jun-10 www.vishay.com 1 SiHG16N50C Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. Maximum Junction-to-Ambient RthJA - 40 Maximum Junction-to-Case (Drain) RthJC - 0.5 UNIT °C/W SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage (N) VDS VGS = 0 V, ID = 250 μA 500 - - V ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 0.6 - V/°C VGS(th) VDS = VGS, ID = 250 μA 3.0 - 5.0 V Gate-Source Leakage IGSS VGS = ± 30 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 500 V, VGS = 0 V - - 50 VDS = 400 V, VGS = 0 V, TJ = 125 °C - - 250 VGS = 10 V μA - 0.317 0.38 Ω gfs VDS = 50 V, ID = 3 A - 3 - S Input Capacitance Ciss VGS = 0 V, VDS = 25 V, f = 1.0 MHz - 1900 - - 230 - - 24 - - 45 68 - 18 - Drain-Source On-State Resistance Forward Transconductancea RDS(on) ID = 8 A Dynamic Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs VGS = 10 V ID = 16 A, VDS = 400 V Gate-Drain Charge Qgd - 22 - Turn-On Delay Time td(on) - 27 - Rise Time Turn-Off Delay Time tr td(off) Fall Time tf Gate Input Resistance Rg pF nC VDD = 250 V, ID = 16 A, Rg = 9.1 Ω, VGS = 10 V - 156 - - 29 - - 31 - f = 1 MHz, open drain - 1.6 - - - 16 - - 30 - - 1.8 V - 555 - ns - 5.5 - μC - 18 - A ns Ω Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulsed Diode Forward Current ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Body Diode Reverse Recovery Current IRRM MOSFET symbol showing the integral reverse p - n junction diode D A G S TJ = 25 °C, IS = 10 A, VGS = 0 V TJ = 25 °C, IF = IS, dI/dt = 100 A/μs, VR = 20 V Note • The information shown here is a preliminary product proposal, not a commercial product data sheet. Vishay Siliconix is not committed to produce this or any similar product. This information should not be used for design purposes, nor construed as an offer to furnish or sell such products. www.vishay.com 2 Document Number: 91418 S10-1355-Rev. A, 14-Jun-10 SiHG16N50C Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 45 50 15 V 14 V 13 V 12 V 11 V 10 V 9.0 V 8.0 V 7.0 V 6.0 V BOTTOM 5.0 V 40 35 30 25 TJ = 25 °C 20 15 10 5 7.0 V 0 0 5 10 15 20 15 TJ = 150 °C 10 TJ = 25 °C 5 0 25 0 30 TJ = 150 °C 10 7.0 V 5 0 0 25 2 4 6 8 10 12 14 16 18 20 Fig. 3 - Typical Transfer Characteristics 15 V 14 V 13 V 12 V 11 V 10 V 9.0 V 8.0 V 7.0 V 6.0 V BOTTOM 5.0 V 15 30 Fig. 1 - Typical Output Characteristics TOP 20 35 VGS, Gate-to-Source Voltage (V) VGS 25 20 40 VDS, Drain-to-Source Voltage (V) 30 ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP RDS(on), Drain-to-Source On-Resistance (Normalized) ID, Drain-to-Source Current (A) VGS 45 5 10 15 20 25 VDS, Drain-to-Source Voltage (V) Fig. 2 - Typical Output Characteristics Document Number: 91418 S10-1355-Rev. A, 14-Jun-10 30 3 ID = 16 A 2.5 2 1.5 1 0.5 VGS = 10 V 0 - 60 - 40 - 20 0 20 40 60 80 100 120 140 160 TJ, Junction Temperature (°C) Fig. 4 - Normalized On-Resistance vs. Temperature www.vishay.com 3 SiHG16N50C Vishay Siliconix VGS = 0 V, f = 1MHz Ciss = Cgs +Cgd Cds SHORTED Crss = Cgd Coss = Cds + Cgd C, Capacitance (pF) 2400 2000 Ciss 1600 1200 Coss 800 400 Crss 100 ISD, Reverse Drain Current (A) 2800 TJ = 150 °C 10 TJ = 25 °C 1 VGS = 0 V 0.1 0 1 10 100 0.2 1000 VDS, Drain-to-Source Voltage (V) Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage ID = 16 A 0.8 1 1.2 1.4 1.6 OPERATION IN THIS AREA LIMITED BY RDS(on) 100 VDS = 400 V VDS = 250 V VDS = 100 V 20 0.6 Fig. 7 - Typical Source-Drain Diode Forward Voltage ID, Drain-to-Source Current (A) VGS, Gate-to-Source Voltage (V) 24 0.4 VSD, Source-to-Drain Voltage (V) 16 12 8 4 100 µs 10 1 1 ms TC = 25 °C TJ = 150 °C Single Pulse 10 ms 0.1 0 0 20 40 60 80 10 VDS VGS RG RD Fig. 8 - Maximum Safe Operating Area VDS 90 % D.U.T. + - VDD 10 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 9a - Switching Time Test Circuit www.vishay.com 4 1000 VDS, Drain-to-Source Voltage (V) QG, Total Gate Charge (nC) Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage 100 10 % VGS t d(on) tr t d(off) t f Fig. 9b - Switching Time Waveforms Document Number: 91418 S10-1355-Rev. A, 14-Jun-10 SiHG16N50C Vishay Siliconix 1 Thermal Response (ZthJC) 0.5 0.2 0.1 0.1 PDM 0.05 t1 0.02 t2 Notes: 1. Duty Factor, D = t1/t2 2. Peak Tj = PDM x ZthJC + TC Single Pulse (Thermal Response) 0.01 10-4 10-3 10-2 0.1 1 t1, Rectangular Pulse Duration (s) Fig. 10 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 15 V QG VGS L VDS Driver QGS D.U.T. RG + A - VDD IAS 20 V VG A 0.01 Ω tp QGD Charge Fig. 11a - Unclamped Inductive Test Circuit Fig. 12a - Basic Gate Charge Waveform Current regulator Same type as D.U.T. V DS 50 kΩ tp 12 V 0.2 µF 0.3 µF D.U.T. + V - DS VGS 3 mA I AS IG ID Current sampling resistors Fig. 11b - Unclamped Inductive Waveforms Document Number: 91418 S10-1355-Rev. A, 14-Jun-10 Fig. 12b - Gate Charge Test Circuit www.vishay.com 5 SiHG16N50C Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit + D.U.T. Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + - - Rg • • • • + dV/dt controlled by Rg Driver same type as D.U.T. ISD controlled by duty factor “D” D.U.T. - device under test + - VDD Driver gate drive Period P.W. D= P.W. Period VGS = 10 Va D.U.T. lSD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt Re-applied voltage Inductor current VDD Body diode forward drop Ripple ≤ 5 % ISD Note a. VGS = 5 V for logic level devices Fig. 13 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91418. www.vishay.com 6 Document Number: 91418 S10-1355-Rev. 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