AOSMD AOD607_08

AOD607
Complementary Enhancement Mode Field Effect Transistor
General Description
Features
The AOD607 uses advanced trench
technology MOSFETs to provide
excellent RDS(ON) and low gate charge.
The complementary MOSFETs may be
used in H-bridge, Inverters and other
applications.
n-channel
p-channel
-30V
VDS (V) = 30V
-12A (VGS = -10V)
ID = 12A (VGS=10V)
RDS(ON)
RDS(ON)
< 25 mΩ (VGS=10V)
< 37 mΩ (VGS = -10V)
< 34 mΩ (VGS=4.5V)
< 62 mΩ (VGS = -4.5V)
100% UIS Tested!
-RoHS Compliant
-Halogen Free*
TO-252-4L
D-PAK
D1/D2
Top View
Bottom View
D1/D2
Top View
Drain Connected
to Tab
G1
S2
S1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Max n-channel
Symbol
VDS
30
Drain-Source Voltage
VGS
Gate-Source Voltage
±20
Pulsed Drain Current
Avalanche Current
TC=100°C
C
Repetitive avalanche energy L=0.1mH
Power Dissipation
B
Power Dissipation A
C
TC=25°C
TC=100°C
TA=25°C
TA=70°C
Max p-channel
-30
Units
V
±20
V
-12
ID
IDM
9.4
-9.4
40
-40
IAR
18
-18
A
EAR
40
40
mJ
25
25
12.5
12.5
2.1
2.1
1.3
1.3
-55 to 175
-55 to 175
PD
PDSM
TJ, TSTG
Junction and Storage Temperature Range
Thermal Characteristics: n-channel and p-channel
Parameter
A
t ≤ 10s
Maximum Junction-to-Ambient
A
Steady-State
Maximum Junction-to-Ambient
Steady-State
Maximum Junction-to-Case B
A
t ≤ 10s
Maximum Junction-to-Ambient
Steady-State
Maximum Junction-to-Ambient A
Steady-State
Maximum Junction-to-Case B
Alpha & Omega Semiconductor, Ltd.
p-channel
12
TC=25°C
C
S2
n-channel
G1
Continuous Drain
G
Current
G2
S1
G2
Symbol
RθJA
RθJC
RθJA
RθJC
A
W
W
°C
Device
n-ch
n-ch
n-ch
Typ
19
47
4.5
Max
23
60
6
°C/W
°C/W
°C/W
p-ch
p-ch
p-ch
19
47
4.5
23
60
6
°C/W
°C/W
°C/W
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AOD607
N-Channel Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=250µA, VGS=0V
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±20V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
1.5
ID(ON)
On state drain current
VGS=4.5V, VDS=5V
40
TJ=55°C
VGS=10V, ID=12A
TJ=125°C
VGS=4.5V, ID=5A
gFS
Forward Transconductance
VDS=5V, ID=12A
VSD
Diode Forward Voltage
IS=1A,VGS=0V
Units
V
1
Zero Gate Voltage Drain Current
Static Drain-Source On-Resistance
Max
30
VDS=24V, VGS=0V
IDSS
RDS(ON)
Typ
5
µA
100
nA
1.7
2.5
V
20
25
28
34
27.5
34
A
25
0.75
mΩ
mΩ
S
1
V
IS
Maximum Body-Diode Continuous Current
18
A
ISM
Pulsed Body-Diode CurrentC
40
A
1250
pF
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
1040
VGS=0V, VDS=15V, f=1MHz
Qgs
Gate Source Charge
pF
110
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
180
VGS=10V, VDS=15V, ID=12A
pF
0.7
1.5
Ω
19.8
25
nC
9.8
12.5
nC
2.5
nC
Qgd
Gate Drain Charge
3.5
nC
tD(on)
Turn-On DelayTime
4.5
ns
tr
Turn-On Rise Time
3.9
ns
17.4
ns
3.2
ns
VGS=10V, VDS=15V, RL=1.25Ω,
RGEN=3Ω
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
Body Diode Reverse Recovery Time
IF=12A, dI/dt=100A/µs
19
Qrr
Body Diode Reverse Recovery Charge IF=12A, dI/dt=100A/µs
8
25
ns
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allow s it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
G. The maximum current rating is limited by bond-wires.
*This device is guaranteed green after data code 8X11 (Sep 1ST 2008).
Rev3: Oct 2008
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD607
N-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
20
4V
10V
25
20
3.5V
12
ID(A)
ID (A)
VDS=5V
16
4.5V
15
125°C
8
10
25°C
VGS=3V
4
5
0
0
0
1
2
3
4
5
1.5
VDS (Volts)
Fig 1: On-Region Characteristics
2.5
3
3.5
4
VGS(Volts)
Figure 2: Transfer Characteristics
35
1.6
Normalized On-Resistance
VGS=4.5V
30
RDS(ON) (mΩ )
2
25
20
VGS=10V
15
10
0
5
10
15
VGS=10V
ID=12A
1.4
VGS=4.5V
1.2
ID=5A
1
0.8
20
0
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
50
1.0E+01
1.0E+00
1.0E-01
ID=12A
IS (A)
RDS(ON) (mΩ )
40
30
125°C
1.0E-02
25°C
125°C
1.0E-03
20
1.0E-04
25°C
1.0E-05
10
0.0
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics
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AOD607
N-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1500
10
VDS=15V
ID=12A
1250
Ciss
Capacitance (pF)
VGS (Volts)
8
6
4
1000
750
500
2
250
0
Crss
0
0
4
8
12
16
20
0
Qg (nC)
Figure 7: Gate-Charge Characteristics
100.0
5
10
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
30
50
ID (Amps)
10.0
1ms
10µs
10ms
0.1s
100µs
1s
1.0
10s
TJ(Max)=150°C
TA=25°C
DC
30
20
10
0.1
0.1
1
TJ(Max)=150°C
TA=25°C
40
Power (W)
RDS(ON)
limited
10
0
0.001
100
VDS (Volts)
10
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Zθ JA Normalized Transient
Thermal Resistance
Coss
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
Single Pulse
0.001
0.00001
0.0001
PD
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=60°C/W
0.01
0.001
0.01
0.1
Ton
1
T
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD607
P-Channel Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=-250µA, VGS=0V
-30
VDS=-24V, VGS=0V
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VDS=0V, VGS=±20V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=-250µA
-1.5
ID(ON)
On state drain current
VGS=-10V, VDS=-5V
-40
Static Drain-Source On-Resistance
TJ=125°C
VGS=-4.5V, ID=-5A
gFS
Forward Transconductance
VDS=-5V, ID=-12A
VSD
Diode Forward Voltage
IS=-1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
ISM
Pulsed Body-Diode Current
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
Qg(4.5V) Total Gate Charge (4.5V)
Gate Source Charge
-1
-5
VGS=-10V, VDS=-15V, ID=-12A
µA
±100
nA
-2
-2.4
V
30
37
42
50
50
62
A
17
-0.76
mΩ
mΩ
S
-1
V
-18
A
-40
A
1100
pF
190
pF
122
VGS=0V, VDS=0V, f=1MHz
Units
V
920
VGS=0V, VDS=-15V, f=1MHz
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge (10V)
Qgs
-0.003
C
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Max
TJ=55°C
VGS=-10V, ID=-12A
RDS(ON)
Typ
pF
3.6
5
Ω
18.7
23
nC
9.7
11.7
nC
2.54
nC
Qgd
Gate Drain Charge
5.4
tD(on)
Turn-On DelayTime
9
13
ns
tr
Turn-On Rise Time
25
35
ns
20
30
ns
12
18
ns
21.4
26
16
ns
nC
VGS=-10V, VDS=-15V, RL=1.25Ω,
RGEN=3Ω
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Qrr
Body Diode Reverse Recovery Charge IF=-12A, dI/dt=100A/µs
IF=-12A, dI/dt=100A/µs
13
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The
Power dissipation PDSM is based on steady-state R θJA and the maximum allowed junction temperature of 150°C. The value in any given
application depends on the user's specific board design, and the maximum temperature fo 175°C may be u sed if the PCB or heatsink allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
G. The maximum current rating is limited by the package current capability.
*This device is guaranteed green after data code 8X11 (Sep 1ST 2008).
Rev3: Oct. 2008
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD607
P-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
30
-4.5V
-6V
-10V
25
20
20
-4V
-ID(A)
-ID (A)
VDS=-5V
25
-5V
15
-3.5V
10
15
10
125°C
5
5
VGS=-3V
25°C
0
0
0
1
2
3
4
5
0
0.5
80
2
2.5
3
3.5
4
4.5
5
1.60
Normalized On-Resistance
70
VGS=-4.5V
60
RDS(ON) (mΩ )
1.5
-VGS(Volts)
Figure 2: Transfer Characteristics
-VDS (Volts)
Fig 1: On-Region Characteristics
50
40
30
VGS=-10V
20
VGS=-4.5V
1.40
ID=-5A
VGS=-10V
1.20
ID=-12A
1.00
0.80
10
0
5
10
15
20
0
25
25
100
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
-ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
1.0E+01
90
1.0E+00
ID=-12A
80
1.0E-01
70
125°C
60
125°C
50
-IS (A)
RDS(ON) (mΩ )
1
1.0E-02
1.0E-03
40
1.0E-04
30
25°C
20
25°C
1.0E-05
10
1.0E-06
0
0.0
3
4
5
6
7
8
9
10
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.2
0.4
0.6
0.8
1.0
-VSD (Volts)
Figure 6: Body-Diode Characteristics
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AOD607
P-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1500
10
VDS=-15V
ID=-12A
1250
Ciss
Capacitance (pF)
-VGS (Volts)
8
6
4
2
1000
750
500
Coss
0
0
0
4
8
12
16
20
0
5
-Qg (nC)
Figure 7: Gate-Charge Characteristics
1s
1
20
10
DC
0.1
10
0
0.001
100
-VDS (Volts)
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=60°C/W
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
30
100µs
10ms
0.1s
0.1
25
30
1ms
10s
20
TJ(Max)=150°C
TA=25°C
10µs
RDS(ON)
limited
1.0
15
40
TJ(Max)=150°C, T A=25°C
10.0
10
-VDS (Volts)
Figure 8: Capacitance Characteristics
Power (W)
-ID (Amps)
100.0
Zθ JA Normalized Transient
Thermal Resistance
Crss
250
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
PD
Ton
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
T
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD607 N-Channel
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
DUT
-
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
DUT
Vgs
90%
+ Vdd
VDC
-
Rg
10%
Vgs
Vgs
td(on)
tr
td(off)
ton
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
EAR= 1/2 LIAR
Vds
BVDSS
Vds
Id
Vgs
Vgs
+ Vdd
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vgs
Vds -
Isd
L
Vgs
Ig
Alpha & Omega Semiconductor, Ltd.
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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AOD607 P-Channel
Gate Charge Test Circuit & Waveform
Vgs
Qg
-10V
-
-
VDC
+
VDC
Qgs
Vds
Qgd
+
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
toff
ton
td(on)
Vgs
-
DUT
Vgs
td(off)
tr
tf
90%
Vdd
VDC
+
Rg
Vgs
10%
Vds
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
2
L
EAR= 1/2 LIAR
Vds
Vds
Id
-
Vgs
Vgs
VDC
+
Rg
BVDSS
Vdd
Id
I AR
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vgs
Vds -
Isd
-Isd
L
Vgs
Ig
Alpha & Omega Semiconductor, Ltd.
+ Vdd
t rr
dI/dt
-I RM
Vdd
VDC
-
-I F
-Vds
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