HS-2510RH TM Data Sheet August 1999 Radiation Hardened High Slew Rate Operational Amplifier FN3592.2 Features • Electrically Screened to SMD # 5962-95686 The HS-2510RH is a radiation hardened high performance operational amplifier which set the standard for maximum slew rate and wide bandwidth operation in moderately powered, internally compensated, monolithic devices. In addition to excellent dynamic characteristics, this dielectrically isolated amplifier also offers low offset current and high input impedance. The ±50V/ms minimum slew rate and fast settling time of the HS-2510RH are ideally suited for high speed D/A, A/D, and pulse amplification designs. The HS-2510RH superior bandwidth and 750kHz minimum full power bandwidth are extremely useful in RF and video applications. To insure compliance with slew rate and transient response specifications, all devices are 100% tested for AC performance characteristics over full temperature limits. To improve signal conditioning accuracy, the HS-2510RH provides a maximum offset current of 25nA and a minimum input impedance of 50MΩ, both at 25oC, as well as offset voltage trim capability. Specifications for Rad Hard QML devices are controlled by the Defense Supply Center in Columbus (DSCC). The SMD numbers listed here must be used when ordering. Detailed Electrical Specifications for these devices are contained in SMD 5962-95686. A “hot-link” is provided on our homepage for downloading. • QML Qualified per MIL-PRF-38535 Requirements • High Slew Rate . . . . . . . . . . . 50V/µs (Min), 65V/µs (Typ) • Wide Power Bandwidth . . . . . . . . . . . . . . . . 750kHz (Min) • Low Offset Current . . . . . . . . . . . . 25nA (Min), 10nA (Typ) • High Input Impedance . . . . . . . 50MΩ (Min), 100MΩ (Typ) • Wide Small Signal Bandwidth . . . . . . . . . . . 12MHz (Typ) • Fast Settling Time (0.1% of 10V Step). . . . . . 250ns (Typ) • Low Quiescent Supply Current . . . . . . . . . . . . 6mA (Max) • Internally Compensated For Unity Gain Stability • Total Gamma Dose . . . . . . . . . . . . . . . . . . . . 10kRAD(Si) Applications • Data Acquisition Systems • RF Amplifiers • Video Amplifiers • Signal Generators • Pulse Amplification Ordering Information INTERNAL MKT. NUMBER ORDERING NUMBER TEMP. RANGE (oC) 5962D9568601VPA HS7-2510RH-Q -55 to 125 5962D9568601VPC HS7B-2510RH-Q -55 to 125 5962D9568601VXC HS9-2510RH-Q -55 to 125 Pinouts HS-2510RH GDIP1-T8 (CERDIP) OR HS-2510RH CDIP2-T8 (SBDIP) TOP VIEW BAL 1 IN- 2 IN+ V- 3 - + 4 8 COMP 7 V+ 6 OUT 5 1 BAL HS-2510RH CDFP3-F14 (FLATPACK) TOP VIEW NC 1 14 NC COMP 2 13 V+ BAL 3 IN- 4 IN+ 5 12 OUT - + 11 BAL 10 V- NC 6 9 NC NC 7 8 NC CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Intersil (and design) is a trademark of Intersil Americas Inc. Copyright © Intersil Americas Inc. 2002. All Rights Reserved HS-2510RH Test Circuit +VCC ACOUT -1/10 V1 0.1 100K 1 2K 1 OPEN S7 3 BAL ADJ 2 S3A S1 2 1 S2 1 S6 1 1 OPEN FOR LOOP STABILITY, USE MIN VALUE CAPACITOR TO PREVENT OSCILLATION OPEN 1 2 50K 2 DUT 500K - S5B 1 + 2 1 1 - + 2 2 BUFFER V2 2K 0.1 VAC 100 1 3 -1 + S9 OPEN S8 OPEN OPEN 2 100K 2 S3B 100 S5A 1 OPEN 2 50pF (NOTE 1) 10K -VEE 1K x2 5K EOUT 2 S4 ALL RESISTORS = ±1% (Ω) ALL CAPACITORS = ±10% (µF) 1 50K NOTE: 1. Includes stray capacitances. FIGURE 1. SIMPLIFIED TEST CIRCUIT Test Circuit and Waveforms +15V INPUT OUTPUT + 1K - 2K 50pF -15V FIGURE 2. SIMPLIFIED TEST CIRCUIT +200mV +5V INPUT 0V INPUT -200mV 0V -5V +5V OVERSHOOT 90% ∆V OUTPUT 90% OUTPUT 10% 10% -5V SLEW RATE = ∆V/∆T ∆T NOTE: Measured on both positive and negative transitions. Capacitance at Compensation pin should be minimized. FIGURE 3. SLEW RATE WAVEFORM 2 RISE TIME NOTE: Measured on both positive and negative transitions. Capacitance at Compensation pin should be minimized. FIGURE 4. TRANSIENT RESPONSE WAVEFORM HS-2510RH Typical Performance Curves Unless Otherwise Specified: TA = 25oC, VSUPPLY = ±15V 100 90 80 BIAS CURRENT 85 GAIN (dB) CURRENT (nA) 60 40 20 VS = ±20V VS = ±15 80 OFFSET CURRENT VS = ±10 0 -20 75 -50 -25 0 25 50 75 100 125 -50 -55 TEMPERATURE (oC) FIGURE 5. INPUT BIAS AND OFFSET CURRENT vs TEMPERATURE 25 50 75 100 125 TEMPERATURE (oC) NORMALIZED PARAMETERS REFERRED TO VALUES AT ±15V 1.1 10K SOURCE RESISTANCE 10 0 SOURCE RESISTANCE 1.0 THERMAL NOISE OF 10K RESISTOR SLEW RATE 1.0 BANDWIDTH BANDWIDTH 0.9 SLEW RATE 0.8 0.1 100Hz 1kHz 10kHz 100kHz ±10V 1MHz ±15V UPPER 3dB FREQUENCY LOWER 3dB FREQUENCY (10Hz) FIGURE 7. EQUIVALENT INPUT NOISE vs BANDWIDTH FIGURE 8. NORMALIZED AC PARAMETERS vs SUPPLY VOLTAGE AT 25oC PEAK-TO-PEAK VOLTAGE SWING 35 BANDWIDTH SLEW RATE 1.0 SLEW RATE BANDWIDTH 0.9 0.8 -50 -55 -25 0 25 50 75 TEMPERATURE (oC) FIGURE 9. NORMALIZED AC PARAMETERS vs TEMPERATURE 3 100 125 ±20V SUPPLY VOLTAGE 1.1 NORMALIZED PARAMETERS REFERRED TO VALUES AT ±25οC 0 FIGURE 6. OPEN LOOP VOLTAGE GAIN vs TEMPERATURE 100 EQUIVALENT INPUT NOISE (µV) -25 VS = ±20 30 25 VS = ±15 20 15 VS = ±10 10 5 0 10K 100K 1MEG 10MEG FREQUENCY (Hz) FIGURE 10. OUTPUT VOLTAGE SWING vs FREQUENCY AT 25oC HS-2510RH Typical Performance Curves Unless Otherwise Specified: TA = 25oC, VSUPPLY = ±15V (Continued) 4.4 100 4.2 0pF 80 CURRENT (mA) OPEN-LOOP VOLTAGE GAIN (dB) 120 30pF 60 100pF 40 300pF 20 1000pF 0 100 VS = ±15 VS = ±10 3.8 3.6 3.4 -20 10 VS = ±20 4.0 1K 10K 100K 1M 10M 3.2 100M -50 -55 FREQUENCY (Hz) -25 0 25 50 75 100 125 TEMPERATURE (oC) NOTE: External compensation components are not required for stability, but may be added to reduce bandwidth, if desired. FIGURE 12. POWER SUPPLY CURRENT vs TEMPERATURE FIGURE 11. OPEN LOOP FREQUENCY RESPONSE FOR VARIOUS VALUES OF CAPACITORS FROM COMPENSATION PIN TO GROUND V+ 30o 100 60o 80 PHASE 60 90o 40 120o 20 150o GAIN 20kΩ PHASE ANGLE OPEN LOOP VOLTAGE GAIN (dB) 120 RT IN BAL 180o 0 OUT V- -20 100 1K 10K 100K 1M 10M 100M NOTE: Tested offset adjustment is |VOS + 1mV| minimum referred to output typical range is ±8mV for RT = 20kΩ. FREQUENCY (Hz) FIGURE 14. SUGGESTED VOS ADJUSTMENT FIGURE 13. OPEN LOOP GAIN AND PHASE RESPONSE vs FREQUENCY INPUT NOISE VOLTAGE (nV/√Hz) 1000 100 INPUT NOISE VOLTAGE 100 10 INPUT NOISE CURRENT 10 1 1 1 10 100 1K 10K 0.1 100K FREQUENCY (Hz) FIGURE 15. INPUT NOISE DENSITY vs FREQUENCY 4 INPUT NOISE CURRENT (pA/√Hz) 10 HS-2510RH Burn-In Circuits HS7-2510RH CERDIP 1 8 2 7 R1 + 3 HS9-2510RH CERAMIC FLATPACK V+ 6 C3 4 VD2 C1 D1 5 C2 1 14 2 13 3 12 4 11 5 10 R1 NOTES: 6 9 7 8 V+ C3 C1 D1 VC2 D2 NOTES: 2. R1 = 1MΩ, ±5%, 1/4W (Min) 7. R1 = 1MΩ, ±5%, 1/4W (Min) 3. C1 = C2 = 0.01µF/Socket (Min) or 0.1µF/Row (Min) 8. C1 = C2 = 0.01µF/Socket (Min) or 0.1µF/Row (Min) 4. C3 = 0.01µF/Socket (10%) 9. C3 = 0.01µF/Socket (±10%) 5. D1 = D2 = 1N4002 or Equivalent (Per Board) 10. D1 = D2 = 1N4002 or Equivalent (Per Board) 6. |(V+) - (V-)| = 30V 11. |(V+) - (V-)| = 31V ±1V Irradiation Circuit HS7-2510RH C 1 8 2 7 3 6 4 5 R V2 C NOTES: 12. V1 = +15V ±10% 13. V2 = -15V ±10% 14. R = 1MΩ ±5% 15. C = 0.1µF ±10% 5 C V1 HS-2510RH Schematic Diagram OFFSET OFFSET V+ R6 200 R5 200 Q1 R9 200 R8 200 R11 2K R7 1.8K Q2 Q3 R1 4K Q6 R10 1.8K Q8 Q10 R12 1.1K Q16 R2 2K C2 2.7pF Q5 R3 960 Q7 R13 30 C1 10pF Q11 Q9 Q14 OUTPUT R14 30 Q4 COMP Q17 Q12 R4 11.13K Q40 Q37 INPUT+ Q38 Q35 Q19 1.68K R25 Q29 1.68K Q39 R19 6.3K Q30 R23 3K Q27 Q31 Q25 Q32 R20 3K Q20 Q23 Q24 Q22 Q21 Q33 Q36 Q13 R26 Q28 Q26 Q34 Q18 Q15 R22 240 R18 1.48K R17 1.48K R16 1.48K R15 740 V- INPUT- 6 HS-2510RH Die Characteristics DIE DIMENSIONS: Backside Finish: 65 mils x 57 mils x 19 mils (1660µm x 1950µm x 483µm) Silicon ASSEMBLY RELATED INFORMATION: INTERFACE MATERIALS: Substrate Potential (Powered Up): Glassivation: Unbiased Type: Nitride Thickness: 7kÅ ±0.7kÅ ADDITIONAL INFORMATION: Worst Case Current Density: Top Metallization: <2 x 105A/cm2 Type: Aluminum Thickness: 16kÅ ±2kÅ Transistor Count: 40 Substrate: Linear Bipolar, DI Die Attach: Temperature: CERDIP 460oC (Max) Metallization Mask Layout HS-2510RH V+ OUT BAL V- COMP BAL -IN +IN All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9000 quality systems. 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