REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Changes IAW NOR 5962-R090-98 – thl 98-04-20 Raymond L. Monnin B Add device class T criteria. Editorial changes throughout. - jak 98-12-07 Monica L. Poelking C Correct the Total Dose Rate and update RHA levels. - LTG 99-04-29 Monica L. Poelking D Change title. Delete table III. Add table IB. Update radiation features in section 1.5 and paragraphs 4.4.4.1 – 4.4.4.5. Update boilerplate paragraphs to the current MIL-PRF-38535 requirements - jak. 10-06-16 Thomas M. Hess REV SHEET REV D D D D D D D D D SHEET 15 16 17 18 19 20 21 22 23 D D D D D D D D D D D D D D 1 2 3 4 5 6 7 8 9 10 11 12 13 14 REV STATUS REV OF SHEETS SHEET PMIC N/A PREPARED BY Thanh V. Nguyen STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY Monica L. Poelking AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 95-10-30 AMSC N/A DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 http://www.dscc.dla.mil CHECKED BY Thanh V. Nguyen REVISION LEVEL D MICROCIRCUIT, DIGITAL, HIGH SPEED CMOS, RADIATION HARDENED, NON-INVERTING OCTAL BUFFER/LINE DRIVER WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON SIZE CAGE CODE A 67268 SHEET DSCC FORM 2233 APR 97 . 1 OF 5962-95731 23 5962-E294-10 1. SCOPE 1.1 Scope. This drawing documents three product assurance class levels consisting of high reliability (device classes Q and M), space application (device class V) and for appropriate satellite and similar applications (device class T). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN. For device class T, the user is encouraged to review the manufacturer’s Quality Management (QM) plan as part of their evaluation of these parts and their acceptability in the intended application. 1.2 PIN. The PIN is as shown in the following example: 5962 R Federal stock class designator \ 95731 01 RHA designator (see 1.2.1) Device type (see 1.2.2) / V X Device class designator (see 1.2.3) Case outline (see 1.2.4) C Lead finish (see 1.2.5) \/ Drawing number 1.2.1 RHA designator. Device classes Q, T and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number 01 Circuit function HCS244 Radiation hardened, SOS, high speed CMOS, non-inverting octal buffer/line driver with three-state outputs 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device requirements documentation Device class M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q, V Certification and qualification to MIL-PRF-38535 T Certification and qualification to MIL-PRF-38535 with performance as specified in the device manufacturers approved quality management plan. 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter R X Descriptive designator Terminals Package style CDIP2-T20 CDFP4-F20 20 20 Dual-in-line Flat pack 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q, T and V or MIL-PRF-38535, appendix A for device class M. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-95731 A REVISION LEVEL D SHEET 2 1.3 Absolute maximum ratings. 1/ 2/ 3/ Supply voltage range (VCC) .................................................................................. -0.5 V dc to +7.0 V dc DC input voltage range (VIN) ................................................................................ -0.5 V dc to VCC + 0.5 V dc DC output voltage range (VOUT) ........................................................................... -0.5 V dc to VCC + 0.5 V dc DC input current, any one input (IIN)..................................................................... 10 mA DC output current, any one output (IOUT) ............................................................. 25 mA Storage temperature range (TSTG) ....................................................................... -65C to +150C Lead temperature (soldering, 10 seconds) .......................................................... +265C Thermal resistance, junction-to-case (JC): Case outline R ................................................................................................... 24C/W Case outline X ................................................................................................... 28C/W Thermal resistance, junction-to-ambient (JA): Case outline R ................................................................................................... 72C/W Case outline X ................................................................................................... 107C/W Junction temperature (TJ) .................................................................................... +175C Maximum package power dissipation at TA = +125C (PD): 4/ Case outline R ................................................................................................... 0.69 W Case outline X ................................................................................................... 0.47 W 1.4 Recommended operating conditions. 2/ 3/ Supply voltage range (VCC) .................................................................................. +4.5 V dc to +5.5 V dc Input voltage range (VIN) ...................................................................................... +0.0 V dc to VCC Output voltage range (VOUT)................................................................................. +0.0 V dc to VCC Maximum low level input voltage (VIL).................................................................. 30% of VCC Minimum high level input voltage (VIH) ................................................................. 70% of VCC Case operating temperature range (TC) ............................................................... -55C to +125C Maximum input rise and fall time at VCC = 4.5 V (tr, tf).......................................... 500 ns 1.5 Radiation features: Maximum total dose available (dose rate = 50 – 300 rad (Si)/s) (Device classes M,Q, or V) ................................................................................2 x 105 rads (Si) 5 (Device class T).................................................................................................1 x 10 rads (Si) Single event phenomenon (SEP): effective LET, no upsets (see 4.4.4.4) ............................................................. 100 MeV/(cm2/mg) 5/ 10 Dose rate upset (20 ns pulse) ............................................................................. ≥ 1 x 10 rads (Si)/s 5/ Dose rate latch-up ............................................................................................... None 5/ 12 Dose rate survivability ......................................................................................... ≥ 1 x 10 rads (Si)/s 5/ 1/ 2/ 3/ 4/ 5/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. Unless otherwise noted, all voltages are referenced to GND. The limits for the parameters specified herein shall apply over the full specified VCC range and case temperature range of -55C to +125C unless otherwise noted. If device power exceeds package dissipation capability, provide heat sinking or derate linearly (the derating is based on JA) at the following rate: Case outline R ....................................................................................................... 13.9 mW/C Case outline X ....................................................................................................... 9.3 mW/C Guaranteed by design or process but not tested. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-95731 A REVISION LEVEL D SHEET 3 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 MIL-STD-1835 - Test Method Standard Microcircuits. Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 MIL-HDBK-780 - List of Standard Microcircuit Drawings. Standard Microcircuit Drawings. (Copies of these documents are available online at https://assist.daps.dla.mil/quicksearch/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Non-Government publications. The following document(s) form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents cited in the solicitation or contract. AMERICAN SOCIETY FOR TESTING AND MATERIALS (ASTM) ASTM F1192 - Standard Guide for the Measurement of Single Event Phenomena (SEP) Induced by Heavy Ion Irradiation of semiconductor Devices. (Copies of these documents are available online at http://www.astm.org or from ASTM International, 100 Barr Harbor Drive, P.O. Box C700, West Conshohocken, PA, 19428-2959). 2.3 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q, T and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturer's Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A and as specified herein. 3.1.1 Microcircuit die. For the requirements for microcircuit die, see appendix A to this document. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q, T and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Truth table. The truth table shall be as specified on figure 2. 3.2.4 Logic diagram. A representative logic diagram shall be as specified on figure 3. 3.2.5 Switching waveforms and test circuit. The switching waveforms and test circuit shall be as specified on figure 4. 3.2.6 Radiation exposure circuit. The radiation exposure circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing or acquiring activity upon request. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-95731 A REVISION LEVEL D SHEET 4 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table IA and shall apply over the full case operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturer's PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the "5962-" on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q, T and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q, T and V shall be a "QML" or "Q" as required in MIL-PRF-38535. The compliance mark for device class M shall be a "C" as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q, T and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturer's product meets, for device classes Q, T and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q, T and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affect this drawing. 3.9 Verification and review for device class M. For device class M, DSCC, DSCC's agent, and the acquiring activity retain the option to review the manufacturer's facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 37 (see MIL-PRF-38535, appendix A). STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-95731 A REVISION LEVEL D SHEET 5 TABLE IA. Electrical performance characteristics. Test Symbol Test conditions 1/ -55C TC +125C unless otherwise specified Device type VCC Group A subgroups Limits 2/ Min High level output voltage VOH For all inputs affecting Output under test VIH = 3.15 V or VIL = 1.35 V For all other inputs VIN = VCC or GND M, D, P, L, R IOH = -50 A 3/ All Low level output voltage VOL All M, D, P, L, R 3/ All M, D, P, L, R 3/ Input current high IIH All M, D, P, L, R 3/ IIL 4.40 5.5 V 1, 2, 3 5.40 1 5.40 4.5 V 5.5 V For input under test, VIN = 5.5 V For all other inputs VIN = VCC or GND All All M, D, P, L, R 3/ V 0.1 1 0.1 1, 2, 3 0.1 1 0.1 1 +0.5 2, 3 +5.0 1 +5.0 1 -0.5 2, 3 -5.0 1 -5.0 5.5 V All For input under test, VIN = GND For all other inputs VIN = VCC or GND Max 1, 2, 3 All M, D, P, L, R 3/ Input current low 1 All For all inputs affecting output under test VIH = 3.85 V or VIL = 1.65 V For all other inputs VIN = VCC or GND IOL = 50 A 4.40 All For all inputs affecting output under test VIH = 3.15 V or VIL = 1.35 V For all other inputs VIN = VCC or GND IOL = 50 A 1, 2, 3 All For all inputs affecting output under test VIH = 3.85 V or VIL = 1.65 V For all other inputs VIN = VCC or GND IOH = -50 A 4.5 V 5.5 V All Unit V A A See footnotes at end of table. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-95731 A REVISION LEVEL D SHEET 6 TABLE IA. Electrical performance characteristics - Continued. Test Symbol Test conditions 1/ -55C TC +125C unless otherwise specified Device type VCC Group A subgroups Limits 2/ Min Output current high (Source) IOH For all inputs affecting output under test, VIN = 4.5 V or 0.0 V All 4.5 V For all other inputs VIN = VCC or GND VOUT = 4.1 V Output current low (Sink) IOL M, D, P, L, R 3/ All All For all inputs affecting output under test, VIN = 4.5 V or 0.0 V 4.5 V For all other inputs VIN = VCC or GND VOUT = 0.4 V Three-state output leakage current high IOZH All M, D, P, L, R 3/ ____ mOE = 5.5 V For all other inputs All 5.5 V VIN = 0.0 V or 5.5 V VOUT = 5.5 V All M, D, P, L, R 3/ Three-state output leakage current low IOZL ____ mOE = 5.5 V For all other inputs All 5.5 V VIN = 0.0 V or 5.5 V VOUT = 0.0 V All M, D, P, L, R 3/ Quiescent supply current ICC VIN = VCC or GND All M, D, P, L, R 3/ Input capacitance CIN Power dissipation capacitance CPD 4/ 5.5 V All VIH = 5.0 V, VIL = 0.0 V f = 1 MHz, see 4.4.1c 1 -7.2 2, 3 -6.0 1 -6.0 1 7.2 2, 3 6.0 1 6.0 Unit Max mA mA 1 +1.0 2, 3 +50.0 1 +50.0 1 -1.0 2, 3 -50.0 1 -50.0 1 40.0 2, 3 750.0 1 750.0 A A A All 5.0 V 4 10.0 pF All 5.0 V 4 45.0 pF 5, 6 45.0 See footnotes at end of table. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-95731 A REVISION LEVEL D SHEET 7 TABLE IA. Electrical performance characteristics - Continued. Test Functional test Symbol 5/ Test conditions 1/ -55C TC +125C unless otherwise specified VIH = 3.15 V, VIL = 1.35 V See 4.4.1b Propagation delay time, mAn to mYn tPLH 6/ Device type All VCC All CL = 50 pF RL = 500 M, D, P, L, R 3/ CL = 50 pF RL = 500 All All CL = 50 pF RL = 500 See figure 4 CL = 50 pF RL = 500 All All CL = 50 pF RL = 500 See figure 4 1/ tTHL, tTLH CL = 50 pF RL = 500 7/ See figure 4 H 9 2.0 21.0 10, 11 2.0 25.0 9 2.0 25.0 9 2.0 21.0 10, 11 2.0 25.0 9 2.0 25.0 9 2.0 25.0 10, 11 2.0 30.0 9 2.0 30.0 9 2.0 20.0 10, 11 2.0 24.0 9 2.0 24.0 9 2.0 25.0 10, 11 2.0 30.0 9 2.0 30.0 4.5 V 4.5 V All M, D, P, L, R 3/ Output transition time L All M, D, P, L, R 3/ tPLZ tPHZ 6/ 7 4.5 V See figure 4 Propagation delay time, output disable, mOE to mYn H All M, D, P, L, R 3/ tPZH 6/ L All M, D, P, L, R 3/ tPZL 6/ 7, 8 4.5 V See figure 4 Propagation delay time, output enable mOE to mYn Max All M, D, P, L, R 3/ 4.5 V All All Limits 2/ Min 4.5 V See figure 4 tPHL 6/ Group A subgroups 4.5 V 9 12.0 10, 11 18.0 Unit ns ns ns ns Each input/output, as applicable, shall be tested at the specified temperature, for the specified limits, to the tests in table I herein. Output terminals not designated shall be high level logic, low level logic, or open, except for the ICC tests, the output terminals shall be open. When performing the ICC tests, the current meter shall be placed in the circuit such that all current flows through the meter. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-95731 A REVISION LEVEL D SHEET 8 TABLE IA. Electrical performance characteristics - Continued. 2/ For negative and positive voltage and current values, the sign designates the potential difference in reference to GND and the direction of current flow respectively; and the absolute value of the magnitude, not the sign, is relative to the minimum and maximum limits, as applicable, listed herein. 3/ Devices supplied to this drawing meet all levels M, D, P, L, and R of irradiation. However, this device is only tested at the "R" level (see 1.5 herein). Pre and post irradiation values are identical unless otherwise specified in table I. When performing post irradiation electrical measurements for any RHA level, TA = +25C. 4/ Power dissipation capacitance (CPD) determines both the power consumption (PD) and current consumption (IS). Where PD = (CPD + CL) (VCC x VCC)f + (ICC x VCC) IS = (CPD + CL) VCCf + ICC f is the frequency of the input signal. 5/ The test vectors used to verify the truth table shall, at a minimum, test all functions of each input and output. All possible input to output logic patterns per function shall be guaranteed, if not tested, to the truth table in figure 2 herein. For VOUT measurements, L 0.5 V and H 4.0 V. 6/ AC limits at VCC = 5.5 V are equal to the limits at VCC = 4.5 V. For propagation delay tests, all paths must be tested. 7/ This parameter is guaranteed but not tested. This parameter is characterized upon initial design or process changes which affect this characteristic. TABLE IB. SEP test limits. 1/ 2/ Device type VDD = 4.5 V 3/ Effective LET no upsets [MeV/(mg/cm2)] All LET 100 4/ 1/ For SEP test conditions, see 4.4.4.4 herein. 2/ Technology characterization and model verification supplemented by in-line data may be used in lieu of end-of-line testing. Test plan must be approved by TRB and qualifying activity. 3/ Tested for upsets at worst case temperature, TA = +25C 10C. 4/ Guaranteed by design or process but not tested. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-95731 A REVISION LEVEL D SHEET 9 Device type All Case outlines R and X Terminal number Terminal Symbol Terminal number Terminal symbol 1 1OE 11 2A0 2 1A0 12 1Y3 3 2Y3 13 2A1 4 1A1 14 1Y2 5 2Y2 15 2A2 6 1A2 16 1Y1 7 2Y1 17 2A3 8 1A3 18 1Y0 9 2Y0 19 2OE 10 GND 20 VCC FIGURE 1. Terminal connections. Inputs Outputs mOE mAn mYn L L L L H H H X Z H = High voltage level L = Low voltage level X = Immaterial Z = High impedance FIGURE 2. Truth table. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-95731 A REVISION LEVEL D SHEET 10 FIGURE 3. Logic diagram. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-95731 A REVISION LEVEL D SHEET 11 NOTES: 1. When measuring tPZL and tPLZ, S1 is closed and S2 is open. 2. When measuring tPLH, tPHL, tPZH, and tPHZ, S1 is open and S2 is closed. 3. CL = 50 pF minimum or equivalent (includes test jig and probe capacitance). 4. RL = 500 or equivalent. 5. Input signal from pulse generator: VIN = 0.0 V to VCC; PRR 10 MHz; tr 3.0 ns; tf 3.0 ns; tr and tf shall be measured from 10% VCC to 90% VCC and from 90% VCC to 10% VCC, respectively. FIGURE 4. Switching waveforms and test circuit. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-95731 A REVISION LEVEL D SHEET 12 4. VERIFICATION 4.1 Sampling and inspection. For device classes Q, and V, sampling and inspection procedures shall be in accordance with MIL-PRF-38535 or as modified in the device manufacturer’s Quality Management (QM) plan, including screening (4.2), qualification (4.3), and conformance inspection (4.4). The modification in the QM plan shall not affect the form, fit, or function as described herein. For device class T, sampling and inspection procedures shall be in accordance with MIL-PRF-38535 and the device manufacturer’s QM plan, including screening, qualification, and conformance inspection. The performance envelope and reliability information shall be as specified in the manufacturer’s QM plan. For device class M, sampling and inspection procedures shall be in accordance with MIL-PRF-38535, appendix A. 4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conducted on all devices prior to qualification and technology conformance inspection. For device class M, screening shall be in accordance with method 5004 of MIL-STD-883, and shall be conducted on all devices prior to quality conformance inspection. For device class T, screening shall be in accordance with the device manufacturer’s Quality Management (QM) plan, and shall be conducted on all devices prior to qualification and technology conformance inspection. 4.2.1 Additional criteria for device class M. a. Burn-in test, method 1015 of MIL-STD-883. (1) Test condition A, B, C, or D. The test circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1015. (2) TA = +125C, minimum. b. Interim and final electrical test parameters shall be as specified in table IIA herein. 4.2.2 Additional criteria for device classes Q, T and V. a. The burn-in test duration, test condition and test temperature, or approved alternatives shall be as specified in the device manufacturer's QM plan in accordance with MIL-PRF-38535. The burn-in test circuit shall be maintained under document revision level control of the device manufacturer's Technology Review Board (TRB) in accordance with MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1015 of MIL-STD-883. b. Interim and final electrical test parameters shall be as specified in table IIA herein. c. Additional screening for device class V beyond the requirements of device class Q shall be as specified in MIL-PRF-38535, appendix B or as modified in the device manufacturer’s Quality Management (QM) plan. 4.3 Qualification inspection for device classes Q, T and V. Qualification inspection for device classes Q and V shall be in accordance with MIL-PRF-38535. Qualification inspection for device class T shall be in accordance with the device manufacturer’s Quality Management (QM) plan. Inspections to be performed shall be those specified in MIL-PRF-38535 and herein for groups A, B, C, D, and E inspections (see 4.4.1 through 4.4.4). 4.4 Conformance inspection. Technology conformance inspection for classes Q and V shall be in accordance with MIL-PRF-38535, or as specified in the QM plan, including groups A, B, C, D, and E inspections and as specified herein except where option 2 of MIL-PRF-38535 permits alternate in-line control testing. Quality conformance inspection for device class M shall be in accordance with MIL-PRF-38535, appendix A and as specified herein. Inspections to be performed for device class M shall be those specified in method 5005 of MIL-STD-883 and herein for groups A, B, C, D, and E inspections (see 4.4.1 through 4.4.4). Technology conformance inspection for class T shall be in accordance with the device manufacturer’s Quality Management (QM) plan. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-95731 A REVISION LEVEL D SHEET 13 4.4.1 Group A inspection. a. Tests shall be as specified in table IIA herein. b. For device class M, subgroups 7 and 8 tests shall be sufficient to verify the truth table in figure 2 herein. For device classes Q and V, subgroups 7 and 8 shall include verifying the functionality of the device. c. CIN and CPD shall be measured only for initial qualification and after process or design changes which may affect capacitance. CIN shall be measured between the designated terminal and GND at a frequency of 1 MHz. For CIN, and CPD, tests shall be sufficient to validate the limits defined in table I herein. TABLE IIA. Electrical test requirements. Test requirements Subgroups (in accordance with MIL-STD-883, method 5005, table I) Subgroups (in accordance with MIL-PRF-38535, table III) Device class M Device class Q Device class V 1, 7, 9 1, 7, 9 1, 7, 9 1, 2, 3, 7, 8, 9, 10, 11 1/ 1, 2, 3, 7, 8, 9, 10, 11 1/ 1, 2, 3, 7, 8, 9, 10, 11 2/ 3/ 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11 1, 2, 3, 7, 8, 9, 10, 11 1, 2, 3, 7, 8, 9, 10, 11 1, 2, 3, 7, 8, 9, 10, 11 3/ Group D end-point electrical parameters (see 4.4) 1, 7, 9 1, 7, 9 1, 7, 9 Group E end-point electrical parameters (see 4.4) 1, 7, 9 1, 7, 9 1, 7, 9 Interim electrical parameters (see 4.2) Final electrical parameters (see 4.2) Group A test requirements (see 4.4) Group C end-point electrical parameters (see 4.4) Device class T As specified in QM plan 1/ PDA applies to subgroups 1 and 7. 2/ PDA applies to subgroups 1, 7, 9, and 's. 3/ Delta limits as specified in table IIB herein shall be required where specified, and the delta values shall be completed with reference to the zero hour electrical parameters (see table I). TABLE IIB. Burn-in and operating life test, Delta parameters (+25C). Parameters 1/ Delta limits ICC +12 A IOL/IOH -15% IOZL/IOZH 200 nA 1/ These parameters shall be recorded before and after the required burn-in and life test to determine delta limits. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-95731 A REVISION LEVEL D SHEET 14 4.4.2 Group C inspection. The group C inspection end-point electrical parameters shall be as specified in table IIA herein. 4.4.2.1 Additional criteria for device class M. Steady-state life test conditions, method 1005 of MIL-STD-883: a. Test condition A, B, C, or D. The test circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1005 of MIL-STD-883. b. TA = +125C, minimum. c. Test duration: 1,000 hours, except as permitted by method 1005 of MIL-STD-883. 4.4.2.2 Additional criteria for device classes Q, T and V. The steady-state life test duration, test condition and test temperature, or approved alternatives shall be as specified in the device manufacturer's QM plan in accordance with MIL-PRF38535. The test circuit shall be maintained under document revision level control by the device manufacturer's TRB in accordance with MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1005 of MIL-STD-883. 4.4.3 Group D inspection. The group D inspection end-point electrical parameters shall be as specified in table IIA herein. 4.4.4 Group E inspection. Group E inspection is required only for parts intended to be marked as radiation hardness assured (see 3.5 herein). RHA levels for device classes M, Q and V shall be as specified in MIL-PRF-38535 and the end-point electrical parameters shall be as specified in table IIA herein. For device class T, the RHA requirements shall be in accordance with the Class T Radiation Requirements of MIL-PRF-38535. The end-point electrical parameters for class T devices shall be as specified in Table I, Group A subgroups, or as modified in the QM plan. 4.4.4.1 Total dose irradiation testing. Total dose irradiation testing shall be performed in accordance with MIL-STD-883 method 1019, condition A, and as specified herein. For device class T, the total dose requirements shall be in accordance with the class T radiation requirements of MIL-PRF-38535 (see 1.5 herein). 4.4.4.1.1 Accelerated annealing testing. Accelerated annealing testing shall be performed on all devices requiring a RHA level greater than 5k rads (Si). The post-anneal end-point electrical parameter limits shall be as specified in table I herein and shall be the pre-irradiation end-point electrical parameter limits at 25C 5C. Testing shall be performed at initial qualification and after any design or process changes which may affect the RHA response of the device. 4.4.4.2 Dose rate induced latchup testing. Dose rate induced latchup testing shall be performed in accordance with test method 1020 of MIL-STD-883 and as specified herein (see 1.5 herein). Tests shall be performed on devices, SEC, or approved test structures at technology qualification and after any design or process changes which may effect the RHA capability of the process. 4.4.4.3 Dose rate upset testing. Dose rate upset testing shall be performed in accordance with test method 1021 of MIL-STD-883 and herein (see 1.5 herein). a. Transient dose rate upset testing shall be performed at initial qualification and after any design or process changes which may affect the RHA performance of the devices. Test 10 devices with 0 defects unless otherwise specified. b. Transient dose rate upset testing for class Q, T, and V devices shall be performed as specified by a TRB approved radiation hardness assurance plan and MIL-PRF-38535. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-95731 A REVISION LEVEL D SHEET 15 4.4.4.4 Single event phenomena (SEP). When specified in the purchase order or contract SEP testing shall be required on class T and V devices (see 1.5 herein). SEP testing shall be performed on a technology process on the Standard Evaluation Circuit (SEC) or alternate SEP test vehicle as approved by the qualifying activity at initial qualification and after any design or process changes which may affect the upset or latchup characteristics. The recommended test conditions for SEP are as follows: a. The ion beam angle of incidence shall be between normal to the die surface and 60 to the normal, inclusive (i.e. 0 angle 60). No shadowing of the ion beam due to fixturing or package related effects is allowed. b. 7 2 The fluence shall be 100 errors or 10 ions/cm . c. 2 5 2 The flux shall be between 10 and 10 ions/cm /s. The cross-section shall be verified to be flux independent by measuring the cross-section at two flux rates which differ by at least an order of magnitude. d. The particle range shall be 20 micron in silicon. e. The test temperature shall be +25C and the maximum rated operating temperature 10C. f. Bias conditions shall be defined by the manufacturer for the latchup measurements. g. Test four devices with zero failures. 4.5 Methods of inspection. Methods of inspection shall be specified as follows: 4.5.1 Voltage and current. Unless otherwise specified, all voltages given are referenced to the microcircuit GND terminal. Currents given are conventional current and positive when flowing into the referenced terminal. 5. PACKAGING 5.1 Packaging requirements. The requirements for packaging shall be in accordance with MIL-PRF-38535 for device classes Q, T and V or MIL-PRF-38535, appendix A for device class M. 6. NOTES 6.1 Intended use. Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes. 6.1.1 Replaceability. Microcircuits covered by this drawing will replace the same generic device covered by a contractor prepared specification or drawing. 6.1.2 Substitutability. Device class Q devices will replace device class M devices. 6.2 Configuration control of SMD's. All proposed changes to existing SMD's will be coordinated with the users of record for the individual documents. This coordination will be accomplished in accordance with MIL-STD-973 using DD Form 1692, Engineering Change Proposal. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-95731 A REVISION LEVEL D SHEET 16 6.3 Record of users. Military and industrial users should inform Defense Supply Center Columbus (DSCC) when a system application requires configuration control and which SMD's are applicable to that system. DSCC will maintain a record of users and this list will be used for coordination and distribution of changes to the drawings. Users of drawings covering microelectronic devices (FSC 5962) should contact DSCC-VA, telephone (614) 692-0525. 6.4 Comments. Comments on this drawing should be directed to DSCC-VA , Columbus, Ohio 43218-3990, or telephone (614) 692-0674. 6.5 Abbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein are defined in MIL-PRF-38535 and MIL-HDBK-1331. 6.6 Sources of supply. 6.6.1 Sources of supply for device classes Q, T and V. Sources of supply for device classes Q, T and V are listed in QML-38535. The vendors listed in QML-38535 have submitted a certificate of compliance (see 3.6 herein) to DSCC-VA and have agreed to this drawing. 6.6.2 Approved sources of supply for device class M. Approved sources of supply for class M are listed in MIL-HDBK-103. The vendors listed in MIL-HDBK-103 have agreed to this drawing and a certificate of compliance (see 3.6 herein) has been submitted to and accepted by DSCC-VA. 6.7 Additional information. When applicable, a copy of the following additional data shall be maintained and available from the device manufacturer: a. RHA upset levels. b. Test conditions (SEP). c. Number of upsets (SEP). d. Number of transients (SEP). e. Occurrence of latchup (SEP). STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-95731 A REVISION LEVEL D SHEET 17 APPENDIX A A.1 SCOPE A.1.1 Scope. This appendix establishes minimum requirements for microcircuit die to be supplied under the Qualified Manufacturers List (QML) Program. QML microcircuit die meeting the requirements of MIL-PRF-38535 and the manufacturers approved QM plan for use in monolithic microcircuits, multichip modules (MCMs), hybrids, electronic modules, or devices using chip and wire designs in accordance with MIL-PRF-38534 are specified herein. Two product assurance classes consisting of military high reliability (device class Q) and space application (device Class V) are reflected in the Part or Identification Number (PIN). When available a choice of Radiation Hardiness Assurance (RHA) levels is reflected in the PIN. A.1.2 PIN. The PIN shall be as shown in the following example: 5962 R Federal Stock class designator 95731 RHA designator (see 10.2.1) 01 V Device type (see 10.2.2) 9 Device class designator (see 10.2.3) Die code A Die Details (see 10.2.4) Drawing Number A.1.2.1 RHA designator. Device classes Q and V RHA identified die shall meet the MIL-PRF-38535 specified RHA levels. A dash (-) indicates a non-RHA die. A.1.2.2 Device type(s). The device type(s) shall identify the circuit function as follows: Device type Generic number 01 HCS244 Circuit function Radiation hardened, SOS, high speed CMOS, noninverting octal buffer/line driver with three-state outputs A.1.2.3 Device class designator. Device class Q or V Device requirements documentation Certification and qualification to the die requirements of MIL-PRF-38535. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-95731 A REVISION LEVEL D SHEET 18 APPENDIX A A.1.2.4 Die Details. The die details designation shall be a unique letter which designates the die’s physical dimensions, bonding pad location(s) and related electrical function(s), interface materials, and other assembly related information, for each product and variant supplied to this appendix. A.1.2.4.1 Die Physical dimensions. Die Types Figure number 01 A-1 A.1.2.4.2 Die Bonding pad locations and Electrical functions. Die Types Figure number 01 A-1 A.1.2.4.3 Interface Materials. Die Types Figure number 01 A-1 A.1.2.4.4 Assembly related information. Die Types Figure number 01 A-1 A.1.3 Absolute maximum ratings. See paragraph 1.3 within the body of this drawing for details. A.1.4 Recommended operating conditions. See paragraph 1.4 within the body of this drawing for details. A.2 APPLICABLE DOCUMENTS A.2.1 Government specifications, standards, bulletin, and handbooks. Unless otherwise specified, the following specifications, standards, bulletin, and handbook of the issue listed in that issue of the Department of Defense Index of Specifications and Standards specified in the solicitation, form a part of this drawing to the extent specified herein. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings (Copies of these documents are available online at https://assist.daps.dla.mil/quicksearch/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) A.2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing shall take precedence. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-95731 A REVISION LEVEL D SHEET 19 A.3. REQUIREMENTS A.3.1 Item Requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturer’s Quality Management (QM) plan. The modification in the QM plan shall not effect the form, fit or function as described herein. A.3.2 Design, construction and physical dimensions. The design, construction and physical dimensions shall be as specified in MIL-PRF-38535 and the manufacturer’s QM plan, for device classes Q and V and herein. A.3.2.1 Die Physical dimensions. The die physical dimensions shall be as specified in A.1.2.4.1 and on figure A-1. A.3.2.2 Die bonding pad locations and electrical functions. The die bonding pad locations and electrical functions shall be as specified in A.1.2.4.2 and on figure A-1. A.3.2.3 Interface materials. The interface materials for the die shall be as specified in A.1.2.4.3 and on figure A-1. A.3.2.4 Assembly related information. The assembly related information shall be as specified in A.1.2.4.4 and figure A-1. A.3.2.5 Truth table. The truth table shall be as defined within paragraph 3.2.3 of the body of this document. A.3.2.6 Radiation exposure circuit. The radiation exposure circuit shall be as defined within paragraph 3.2.6 of the body of this document. A.3.3 Electrical performance characteristics and post- irradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and post-irradiation parameter limits are as specified in table IA of the body of this document. A.3.4 Electrical test requirements. The wafer probe test requirements shall include functional and parametric testing sufficient to make the packaged die capable of meeting the electrical performance requirements in table IA. A.3.5 Marking. As a minimum, each unique lot of die, loaded in single or multiple stack of carriers, for shipment to a customer, shall be identified with the wafer lot number, the certification mark, the manufacturer’s identification and the PIN listed in A.1.2 herein. The certification mark shall be a “QML” or “Q” as required by MIL-PRF-38535. A.3.6 Certification of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 60.4 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this appendix shall affirm that the manufacturer’s product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and the requirements herein. A.3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 shall be provided with each lot of microcircuit die delivered to this drawing. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-95731 A REVISION LEVEL D SHEET 20 APPENDIX A A.4 VERIFICATION A.4.1 Sampling and inspection. For device classes Q and V, die sampling and inspection procedures shall be in accordance with MIL-PRF-38535 or as modified in the device manufacturer’s Quality Management (QM) plan. The modifications in the QM plan shall not effect the form, fit or function as described herein. A.4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and as defined in the manufacturer’s QM plan. As a minimum it shall consist of: a) Wafer Lot acceptance for Class V product using the criteria defined within MIL-STD-883 TM 5007. b) 100% wafer probe (see paragraph A.3.4). c) 100% internal visual inspection to the applicable class Q or V criteria defined within MIL-STD-883 TM2010 or the alternate procedures allowed within MIL-STD-883 TM5004. A.4.3 Conformance inspection. A.4.3.1 Group E inspection. Group E inspection is required only for parts intended to be identified as radiation assured (see 30.5 herein). RHA levels for device classes Q and V shall be as specified in MIL-PRF-38535. End point electrical testing of packaged die shall be as specified in table IIA herein. Group E tests and conditions are as specified within paragraphs 4.4.4.1, 4.4.4.1.1, 4.4.4.2, 4.4.4.3, and 4.4.4.4. A.5 DIE CARRIER A.5.1 Die carrier requirements. The requirements for the die carrier shall be in accordance with the manufacturer’s QM plan or as specified in the purchase order by the acquiring activity. The die carrier shall provide adequate physical, mechanical and electrostatic protection. A.6 NOTES A.6.1 Intended use. Microcircuit die conforming to this drawing are intended for use in microcircuits built in accordance with MIL-PRF-38535 or MIL-PRF-38534 for government microcircuit applications (original equipment), design applications and logistics purposes. A.6.2 Comments. Comments on this appendix should be directed to DSCC-VA, Columbus, Ohio, 43218-3990 or telephone (614)-692-0647. A.6.3 Abbreviations, symbols and definitions. The abbreviations, symbols, and definitions used herein are defined with MIL-PRF-38535 and MIL-HDBK-1331. A.6.4 Sources of Supply for device classes Q and V. Sources of supply for device classes Q and V are listed in QML-38535. The vendors listed within QML-38535 have submitted a certificate of compliance (see 30.6 herein) to DSCC-VA and have agreed to this drawing. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-95731 A REVISION LEVEL D SHEET 21 APPENDIX A o DIE PHYSICAL DIMENSIONS Die Size: Die Thickness: 2680 x 2740 microns. 21 +/- 2 mils. The following metallization diagram supplies the locations and electrical functions of the bonding pads. The internal metallization layout and alphanumeric information contained within this diagram may or may not represent the actual circuit defined by this SMD. NOTE: Pad numbers reflect terminal numbers when placed in Case Outlines R, X (see Figure 1) FIGURE A-1 Die bonding pad locations and electrical functions. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-95731 A REVISION LEVEL D SHEET 22 APPENDIX A o INTERFACE MATERIALS Top Metallization: Type Thickness SiAl 11.0kÅ +/- 1kÅ Backside Metallization None Glassivation Type: Thickness SiO2 13.0kÅ +/- 2.6kÅ Substrate: Silicon on Sapphire (SOS) o ASSEMBLY RELATED INFORMATION Substrate Potential: Insulator Special assembly instructions: Bond pad #20 (VCC) first. FIGURE A-1 Die bonding pad locations and electrical functions - Continued. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-95731 A REVISION LEVEL D SHEET 23 STANDARD MICROCIRCUIT DRAWING BULLETIN DATE: 10-06-16 Approved sources of supply for SMD 5962-95731 are listed below for immediate acquisition information only and shall be added to MIL-HDBK-103 and QML-38535 during the next revision. MIL-HDBK-103 and QML-38535 will be revised to include the addition or deletion of sources. The vendors listed below have agreed to this drawing and a certificate of compliance has been submitted to and accepted by DSCC-VA. This information bulletin is superseded by the next dated revision of MIL-HDBK-103 and QML-38535. DSCC maintains an online database of all current sources of supply at http://www.dscc.dla.mil/Programs/SMCR/. Standard microcircuit drawing PIN 1/ Vendor CAGE Number Vendor similar PIN 2/ 5962R9573101VRC 34371 HCS244DMSR 5962R9573101VXC 34371 HCS244KMSR 5962R9573101V9A 34371 HCS244HMSR 5962R9573101TRC 3/ HCS244DTR 5962R9573101TXC 3/ HCS244KTR 1/ The lead finish shown for each PIN representing a hermetic package is the most readily available from the manufacturer listed for that part. If the desired lead finish is not listed contact the vendor to determine its availability. 2/ Caution. Do not use this number for item acquisition. Items acquired to this number may not satisfy the performance requirements of this drawing. 3/ Not available from an approved source of supply. Vendor CAGE number 34371 Vendor name and address Intersil corporation 1001 Murphy Ranch Road Milpitas, CA 95035-6803 The information contained herein is disseminated for convenience only and the Government assumes no liability whatsoever for any inaccuracies in the information bulletin.