SO D3 23 F PESD36VS1UJ Unidirectional ESD protection diode 16 September 2015 Product data sheet 1. General description Unidirectional ElectroStatic Discharge (ESD) protection diode in a flat lead very small SOD323F Surface-Mounted Device (SMD) plastic package designed to protect one signal line from the damage caused by ESD and other transients. 2. Features and benefits • • • • • • ESD protection of one line ESD protection up to 30 kV IEC 61000-4-5; (surge); IPPM = 2.5 A Rated peak pulse power: PPPM = 150 W Ultra low leakage current: IRM < 1 nA AEC-Q101 qualified 3. Applications • • • • • computers and peripherals audio and video equipment cellular handsets and accessories portable electronics communication systems 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VRWM reverse standoff voltage Tamb = 25 °C - - 36 V Cd diode capacitance f = 1 MHz; VR = 0 V; Tamb = 25 °C - 18 30 pF Scan or click this QR code to view the latest information for this product PESD36VS1UJ NXP Semiconductors Unidirectional ESD protection diode 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 K cathode[1] 2 A anode Simplified outline 1 Graphic symbol 1 2 sym035 SOD323F [1] 2 The marking bar indicates the cathode. 6. Ordering information Table 3. Ordering information Type number Package PESD36VS1UJ Name Description Version SOD323F plastic surface-mounted package; 2 leads SOD323F 7. Marking Table 4. Marking codes Type number Marking code PESD36VS1UJ BG 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit PPPM peak pulse power tp = 8/20 µs [1][2] - 150 W IPPM peak pulse current [1][2] - 2.5 A Tj junction temperature - 150 °C Tamb ambient temperature -55 150 °C Tstg storage temperature -65 150 °C ESD maximum ratings VESD electrostatic discharge voltage [1] [2] [3] PESD36VS1UJ Product data sheet IEC 61000-4-2; contact discharge [2][3] - 30 kV IEC 61000-4-2; air discharge [2] - 30 kV Device stressed with ten non-repetitive ESD pulses (8/20 µs exponential decay waveform according to IEC 61000-4-5 and IEC 61643-321). Measured from pin 1 to pin 2. Device stressed with ten non-repetitive ESD pulses. All information provided in this document is subject to legal disclaimers. 16 September 2015 © NXP Semiconductors N.V. 2015. All rights reserved 2 / 11 PESD36VS1UJ NXP Semiconductors Unidirectional ESD protection diode 001aaa631 001aaa630 120 IPP 100 % 100 % IPP; 8 µs IPP (%) 80 90 % e- t 50 % IPP; 20 µs 40 10 % 0 Fig. 1. 0 10 20 30 t (µs) t tr = 0.6 ns to 1 ns 40 30 ns 60 ns 8/20 µs pulse waveform according to IEC 61000-4-5 and IEC 61643-321 Fig. 2. ESD pulse waveform according to IEC 61000-4-2 9. Characteristics Table 6. Characteristics Symbol Parameter Conditions Min Typ Max Unit VRWM reverse standoff voltage Tamb = 25 °C - - 36 V IRM reverse leakage current VRWM = 36 V; Tamb = 25 °C - 1 10 nA VBR breakdown voltage IR = 2 mA; Tamb = 25 °C 38.2 39 39.8 V Cd diode capacitance f = 1 MHz; VR = 0 V; Tamb = 25 °C - 18 30 pF VCL clamping voltage IPP = 1 A; Tamb = 25 °C [1][2] - - 58 V IPPM = 2.5 A; Tamb = 25 °C [1][2] - - 80 V Tamb = 25 °C [3] - 9.5 - Ω Rdyn dynamic resistance [1] [2] [3] PESD36VS1UJ Product data sheet Device stressed with 8/20 µs exponential decay waveform according to IEC 61000-4-5 and IEC 61643-321. Measured from pin 1 to pin 2. Non-repetitive current pulse, Transmission Line Pulse (TLP); square pulse; ANSI / ESD STM5.5.1-2008. All information provided in this document is subject to legal disclaimers. 16 September 2015 © NXP Semiconductors N.V. 2015. All rights reserved 3 / 11 PESD36VS1UJ NXP Semiconductors Unidirectional ESD protection diode aaa-002437 102 PPPM (W) 006aab321 1.2 PPPM PPPM(25°C) 0.8 10 0.4 1 10-1 1 tp (ms) Tamb = 25 °C Fig. 3. 0 10 Fig. 4. Rated peak pulse power as a function of square pulse duration; maximum values 0 50 100 Tj (°C) 200 Relative variation of rated peak pulse power as a function of junction temperature; typical values I aaa-017641 20 150 Cd (pF) 16 12 - VCL - VBR - VRWM V - IRM - IR 8 - 4 0 0 8 16 24 32 VR (V) 40 - IPP - IPPM f = 1 MHz; Tamb = 25 °C Fig. 5. + P-N Diode capacitance as a function of reverse voltage; typical values PESD36VS1UJ Product data sheet Fig. 6. V-I characteristics for a unidirectional ESD protection diode All information provided in this document is subject to legal disclaimers. 16 September 2015 006aab324 © NXP Semiconductors N.V. 2015. All rights reserved 4 / 11 PESD36VS1UJ NXP Semiconductors Unidirectional ESD protection diode ESD TESTER 4 GHz DIGITAL OSCILLOSCOPE RG 223/U 50 Ω coax Rd 40 dB ATTENUATOR Cs 50 Ω DUT (DEVICE UNDER TEST) IEC 61000-4-2 ed.2 Cs = 150 pF; Rd = 330 Ω 10 2 V (kV) 8 V (kV) 0 6 -2 4 -4 2 -6 0 -8 -2 -10 0 10 20 30 40 50 t (ns) 60 70 -10 -10 unclamped +8 kV ESD pulse waveform (IEC 61000-4-2 network) 0 10 20 30 40 50 t (ns) 60 70 unclamped -8 kV ESD pulse waveform (IEC 61000-4-2 network) 180 60 VCL (V) VCL (V) 140 20 100 -20 60 -60 20 -20 -10 10 30 50 70 t (ns) -100 -10 clamped +8 kV ESD pulse waveform (IEC 61000-4-2 network) 10 30 50 t (ns) 70 clamped -8 kV ESD pulse waveform (IEC 61000-4-2 network) aaa-018113 Fig. 7. ESD clamping test setup and waveforms PESD36VS1UJ Product data sheet All information provided in this document is subject to legal disclaimers. 16 September 2015 © NXP Semiconductors N.V. 2015. All rights reserved 5 / 11 PESD36VS1UJ NXP Semiconductors Unidirectional ESD protection diode 10. Application information The device is designed for the protection of one unidirectional data line from surge pulses and ESD damage. The device is suitable on lines where the signal polarities are either positive or negative with respect to ground. The device provides a surge capability of 150 W for an 8/20 µs waveform. line to be protected (positive signal polarity) line to be protected (negative signal polarity) ESD protection diode ESD protection diode GND GND unidirectional protection of one line aaa-002440 Fig. 8. Application diagram Circuit board layout and protection device placement Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT) and surge transients. The following guidelines are recommended: 1. 2. 3. 4. 5. Place the device as close to the input terminal or connector as possible. Minimize the path length between the device and the protected line. Keep parallel signal paths to a minimum. Avoid running protected conductors in parallel with unprotected conductors. Minimize all Printed-Circuit Board (PCB) conductive loops including power and ground loops. 6. Minimize the length of the transient return path to ground. 7. Avoid using shared transient return paths to a common ground point. 8. Use ground planes whenever possible. For multilayer PCBs, use ground vias. PESD36VS1UJ Product data sheet All information provided in this document is subject to legal disclaimers. 16 September 2015 © NXP Semiconductors N.V. 2015. All rights reserved 6 / 11 PESD36VS1UJ NXP Semiconductors Unidirectional ESD protection diode 11. Package outline Plastic surface-mounted package; 2 leads SOD323F D E A A c Lp Lp HE 0 1 2 mm scale 1 DIMENSIONS (mm are the original dimensions) 2 bp w M A (1) A bp c D E HE Lp w mm 0.80 0.65 0.40 0.25 0.25 0.10 1.8 1.6 1.35 1.15 2.7 2.3 0.5 0.3 0.1 Note 1. The marking bar indicates the cathode REFERENCES OUTLINE VERSION IEC JEDEC SOD323F Fig. 9. UNIT EUROPEAN PROJECTION JEITA ISSUE DATE 04-09-13 06-03-16 SC-90 Package outline SOD323F 12. Soldering 3.05 2.2 2.1 solder lands solder resist 1.65 0.95 0.5 (2×) 0.6 (2×) solder paste occupied area 0.5 (2×) 0.6 (2×) Dimensions in mm sod323f_fr Fig. 10. Reflow soldering footprint for SOD323F PESD36VS1UJ Product data sheet All information provided in this document is subject to legal disclaimers. 16 September 2015 © NXP Semiconductors N.V. 2015. All rights reserved 7 / 11 PESD36VS1UJ NXP Semiconductors Unidirectional ESD protection diode 13. Revision history Table 7. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes PESD36VS1UJ v.1 20150916 Product data sheet - - PESD36VS1UJ Product data sheet All information provided in this document is subject to legal disclaimers. 16 September 2015 © NXP Semiconductors N.V. 2015. All rights reserved 8 / 11 PESD36VS1UJ NXP Semiconductors Unidirectional ESD protection diode In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 14. Legal information 14.1 Data sheet status Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Document status [1][2] Product status [3] Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] [2] [3] Definition Please consult the most recently issued document before initiating or completing a design. The term 'short data sheet' is explained in section "Definitions". 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This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use in automotive applications — This NXP Semiconductors product has been qualified for use in automotive applications. Unless otherwise agreed in writing, the product is not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors and its suppliers accept no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. All information provided in this document is subject to legal disclaimers. 16 September 2015 © NXP Semiconductors N.V. 2015. All rights reserved 9 / 11 PESD36VS1UJ NXP Semiconductors Unidirectional ESD protection diode No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 14.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Bitsound, CoolFlux, CoReUse, DESFire, FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE, ITEC, MIFARE, MIFARE Plus, MIFARE Ultralight, SmartXA, STARplug, TOPFET, TrenchMOS, TriMedia and UCODE — are trademarks of NXP Semiconductors N.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. PESD36VS1UJ Product data sheet All information provided in this document is subject to legal disclaimers. 16 September 2015 © NXP Semiconductors N.V. 2015. All rights reserved 10 / 11 PESD36VS1UJ NXP Semiconductors Unidirectional ESD protection diode 15. Contents 1 General description ............................................... 1 2 Features and benefits ............................................1 3 Applications ........................................................... 1 4 Quick reference data ............................................. 1 5 Pinning information ............................................... 2 6 Ordering information ............................................. 2 7 Marking ................................................................... 2 8 Limiting values .......................................................2 9 Characteristics ....................................................... 3 10 Application information .........................................6 11 Package outline ..................................................... 7 12 Soldering ................................................................ 7 13 Revision history ..................................................... 8 14 14.1 14.2 14.3 14.4 Legal information ...................................................9 Data sheet status ................................................. 9 Definitions .............................................................9 Disclaimers ...........................................................9 Trademarks ........................................................ 10 © NXP Semiconductors N.V. 2015. All rights reserved For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 16 September 2015 PESD36VS1UJ Product data sheet All information provided in this document is subject to legal disclaimers. 16 September 2015 © NXP Semiconductors N.V. 2015. All rights reserved 11 / 11