VOS628B www.vishay.com Vishay Semiconductors Optocoupler, Phototransistor Output, AC Input, Low Input Current, SSOP-4, Half Pitch, Mini-Flat Package FEATURES • High CTR with low input current A/C 1 4 C C/A 2 3 E • SSOP low profile package (half pitch) • High collector emitter voltage, VCEO = 80 V • Isolation test voltage = 3750 VRMS • Low coupling capacitance • High common mode transient immunity 22628-1 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION The VOS628B series has a GaAs infrared emitting diode emitter, which is optically coupled to a silicon planar phototransistor detector, and is incorporated in a 4-pin 50 mil lead pitch mini-flat package. APPLICATIONS It features a high current transfer ratio at low input current, low coupling capacitance, and high isolation voltage. • Battery powered equipment The coupling devices are designed for signal transmission between two electrically separated circuits. • Programmable controllers • Telecom • Industrial controls • Office machines AGENCY APPROVALS Safety application model number covering all products in this datasheet is VOS628B. This model number should be used when consulting safety agency documents. • UL1577, file no. E76222, double protection • cUL, accordance to CSA component acceptance service no. 5A, double protection • DIN EN 60747-5-5 (VDE 0884-5), available with option 1 • FIMKO EN 60950-1 • CQC GB4943.1-2011 and GB8898-2011 (suitable for installation altitude below 2000 m) ORDERING INFORMATION V O S 6 2 8 B - # PART NUMBER CTR BIN SSOP-4, 50 mil pitch UL, CUL, FIMKO, CQC, VDE (option 1) SSOP-4, 50 mil pitch 0 0 1 PACKAGE OPTION T SSOP-4 TAPE AND REEL ≥ 5 mm CTR (%) AGENCY CERTIFIED/PACKAGE UL, cUL, FIMKO, CQC X ± 1 mA 50 to 600 100 to 200 - VOS628B-3T 160 to 320 - 50 to 600 100 to 200 160 to 320 VOS628B-X001T VOS628B-3X001T VOS628B-4X001T Note • Additional options may be possible, please contact sales office. Document Number: 84314 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Rev. 1.0, 06-Nov-15 VOS628B www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT INPUT Reverse voltage Power dissipation Forward current VR 6 V Pdiss 100 mW mA IF 60 IFSM 1.5 A Tj 125 °C Collector emitter voltage VCEO 80 V Emitter collector voltage VECO 7 V tp ≤ 10 μs Surge forward current Junction temperature OUTPUT Collector current IC 50 mA Power dissipation Pdiss 150 mW Tj 125 °C VISO 3750 VRMS Ptot 250 mW Storage temperature range Tstg -55 to +150 °C Ambient temperature range Tamb -55 to +110 °C Tsld 260 °C Junction temperature COUPLER Isolation test voltage between emitter and detector t = 1 min Total power dissipation Soldering temperature (1) t = 10 s 300 IF - Maximum Forward Current (mA) Ptot - Total Power Dissipation (mW) Notes • Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. (1) Refer to reflow profile for soldering conditions for surface mounted devices. Coupled device 250 200 Phototransistor 150 IR diode 100 50 0 0 20 40 60 80 100 120 Tamb - Ambient Temperature (°C) Fig. 1 - Power Dissipation vs. Ambient Temperature 70 60 50 40 30 20 10 0 -25 0 25 50 75 100 125 Tamb - Ambient Temperature (°C) Fig. 2 - Maximum Forward Current vs. Ambient Temperature Document Number: 84314 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Rev. 1.0, 06-Nov-15 VOS628B www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Forward voltage IF = 5 mA VF - 1.18 1.5 V Reverse current VR = 6 V IR - 0.01 10 μA VR = 0 V, f = 1 MHz CI - 7.3 - pF nA INPUT Capacitance OUTPUT Collector emitter leakage current VCE = 10 V ICEO - 0.3 100 Collector emitter breakdown voltage IC = 100 μA BVCEO 80 - - V Emitter collector breakdown voltage IE = 10 μA BVECO 7 - - V VCE = 5 V, f = 1 MHz CCE - 5 - pF IF = 5 mA, IC = 2.5 mA VCEsat - 0.25 0.4 V IF = 10 mA, VCC = 5 V, RL = 100 Ω fctr - 155 - kHz Collector emitter capacitance COUPLER Collector emitter saturation voltage Cut-off frequency Note • Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. CURRENT TRANSFER RATIO (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION IC/IF IF = ± 1 mA, VCE = 5 V PART SYMBOL MIN. TYP. MAX. UNIT VOS628B CTR 50 - 600 % VOS628B-3 CTR 100 - 200 % VOS628B-4 CTR 160 - 320 % SWITCHING CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Rise and fall time tr - 3 - μs Fall time tf - 3 - μs ton - 6 - μs toff - 4 - μs tr - 3 - μs tf - 12 - μs ton - 4 - μs toff - 18 - μs NON-SATURATED IC = 2 mA, VCC = 5 V, RL = 100 Ω Turn-on time Turn-off time SATURATED Rise and fall time Fall time IF = 1.6 mA, VCC = 5 V, RL = 1.9 kΩ Turn-on time Turn-off time VCC = 5 V Input Input pulse RL VOUT 10 % Output pulse 90 % tr t on isfh618a_10 tf t off isfh618a_12 Fig. 3 - Test Circuit Fig. 4 - Test Circuit and Waveforms Document Number: 84314 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Rev. 1.0, 06-Nov-15 VOS628B www.vishay.com Vishay Semiconductors SAFETY AND INSULATION RATINGS PARAMETER TEST CONDITION SYMBOL VALUE Climatic classification (according to IEC 68 part 1) UNIT 55/110/21 Comparative tracking index CTI 175 VISO 3750 Maximum transient isolation voltage VIOTM 6000 V Maximum repetitive peak isolation voltage VIORM 707 V VIO = 500 V, Tamb = 100 °C RIO 1011 Ω VIO = 500 V, Tamb = TSI RIO 109 Ω Output safety power PSO 350 mW Input safety current ISI 200 mA Maximum rated withstanding isolation voltage 40 % to 60 % RH, AC test of 1 min Insulation resistance Isolation resistance (under fault conditions) Input safety temperature VRMS TSI 175 °C Apparent charge test voltage (method A) VIORM x 1.6 = VPR, type and sample test tm = 60 s, partial discharge < 5 pC VPR 1132 Vpeak Apparent charge test voltage (method B) VIORM x 1.875 = VPR, 100 % production test with tm = 1 s, partial discharge < 5 pC VPR 1326 Vpeak ≥5 mm ≥5 mm ≥ 0.4 mm Creepage distance Clearance distance Insulation thickness DTI Environment (pollution degree in accordance to DIN VDE 0109) 2 Note • As per IEC 60747-5-5, § 7.4.3.8.2, this optocoupler is suitable for “safe electrical insulation” only within the safety ratings. Compliance with the safety ratings shall be ensured by means of protective circuits. TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) Tamb = 110 °C Tamb = 75 °C Tamb = 25 °C Tamb = 0 °C Tamb = - 55 °C 10 IC - Collector Current (mA) IF - Forward Current (mA) 100 1 0.1 IF = 25 mA 50 IF = 20 mA 40 IF = 15 mA 30 IF = 10 mA 20 10 IF = 5 mA IF = 1 mA 0 0.6 0.8 1.0 1.2 1.4 1.6 VF - Forward Voltage (V) Fig. 5 - Forward Voltage vs. Forward Current 0 1 2 3 4 5 6 7 8 9 10 VCE - Collector Emitter Voltage (V) Fig. 6 - Collector Current vs. Collector Emitter Voltage Document Number: 84314 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Rev. 1.0, 06-Nov-15 VOS628B www.vishay.com Vishay Semiconductors 1.4 10 000 NCTR - Normalized CTR (sat) ICE0 - Leakage Current (nA) IF = 0 mA 1000 VCE = 40 V 100 10 VCE = 24 V 1 0.1 VCE = 12 V 0.01 0.001 1.2 1.0 0.8 0.6 0.4 0.2 0 -60 -40 -20 0 20 40 60 Normalized to CTR value: IF = 1 mA, VCE = 5 V, Tamb = 25 °C -60 -40 -20 80 100 120 Tamb - Ambient Temperature (°C) IC - Collector Current (mA) 35 IF = 25 mA 25 20 IF = 1 mA IF = 10 mA IF = 0.5 mA IF = 5 mA 15 10 5 IF = 2 mA 0 0.0 0.1 0.2 0.3 40 60 80 100 120 0.4 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 Normalized to CTR value: IF = 1 mA, VCE = 5 V, Tamb = 25 °C -60 -40 -20 Fig. 8 - Collector Current vs. Collector Emitter Voltage 0 20 40 60 80 100 120 Tamb - Ambient Temperature (°C) VCE - Collector Emitter Voltage (V) Fig. 11 - Normalized Current Transfer Ratio vs. Ambient Temperature (non-sat.) 0.12 2.0 IF = 1 mA 0.10 0.08 0.06 0.04 0.02 NCTR - Normalized CTR (sat) VCEsat - Collector Emitter Voltage (V) 20 Fig. 10 - Normalized Current Transfer Ratio vs. Ambient Temperature (sat.) NCTR - Normalized CTR (non-saturated) Fig. 7 - Collector Emitter Current vs. Ambient Temperature 30 0 Tamb - Ambient Temperature (°C) 1.8 1.6 1.4 Tamb = 0 °C VCE = 0.4 V Normalized to: IF = 1 mA, VCE = 5 V 1.2 1.0 0.8 0.6 Tamb = 25 °C 0.4 0.2 Tamb = 110 °C 0.0 0.00 -60 -40 -20 0 20 40 60 80 100 120 Tamb - Ambient Temperature (°C) Fig. 9 - Collector Emitter Voltage vs. Ambient Temperature Tamb = -55 °C 0.1 1 10 100 IF - Forward Current (mA) Fig. 12 - Current Transfer Ratio vs. Forward Current (sat.) Document Number: 84314 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Rev. 1.0, 06-Nov-15 VOS628B www.vishay.com Vishay Semiconductors 1000 Tamb = 0 °C Tamb = -55 °C 2.0 1.5 Tamb = 25 °C 1.0 Tamb = 110 °C 0.5 Normalized to: IF = 1 mA, VCE = 5 V ton, toff - Switching Time (μs) NCTR - Normalized CTR (NS) 2.5 0.0 VCE = 5 V IF = 1 mA toff (μs) 100 ton (μs) 10 1 0.1 1 10 100 0 Fig. 13 - Current Transfer Ratio vs. Forward Current (non-sat.) 10 15 20 Fig. 16 - Switching Time vs. Load Resistance 0 1000 VCE = 5 V, Tamb = 25 °C RL = 100 Ω -5 -10 100 Voltage Gain fCTR - Cut-off-Frequency (kHz) 5 RL - Load Resistance (kΩ) IF - Forward Current (mA) 10 -15 -20 RL = 1000 Ω -25 -30 -35 1 0.1 VCE = 5 V -40 1 10 100 IC - Collector Current (mA) 1 10 100 1000 f - Frequency (kHz) Fig. 14 - Cut-Off Frequency vs. Collector Current Fig. 17 - Voltage Gain vs. Frequency 0 VCE = 5 V -20 RL = 100 Ω Phase Angle (deg) -40 -60 -80 -100 RL = 1000 Ω -120 -140 -160 1 10 100 1000 f - Frequency (kHz) Fig. 15 - Phase Angle vs. Frequency Document Number: 84314 6 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Rev. 1.0, 06-Nov-15 VOS628B www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS (in millimeters) 4 3 0.2 ± 0.05 4.40 typ. 0.60 Pin One I.D. + 0.20 - 0.30 7.00 ± 0.30 Lead coplanarity 0.1 max. 2 Possible footprint 1.27 0.9 2.85 max. 2.60 ± 0.20 2.00 ± 0.10 1 1.27 nom. 5.00 7.60 0.10 ± 0.10 0.4 ± 0.1 PACKAGE MARKING (example of VOS628B-3X001T) Pin 1 dimple 628B3X V YWW 68 Notes • Option 1 is reflected with letter “X”. • Tape and reel suffix (T) is not part of the package marking. Document Number: 84314 7 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Rev. 1.0, 06-Nov-15 VOS628B www.vishay.com Vishay Semiconductors PACKAGING INFORMATION (TAPE AND REEL) (in millimeters) Top cover tape Embossed carrier Embossment 17998 Fig. 18 - Tape and Reel Shipping Medium 2 ± 0.1 0.3 ± 0.05 4 ± 0.1 1.55 ± 0.05 1.75 ± 0.1 Pin 1 7.5 ± 0.1 16 ± 0.3 7.4 ± 0.1 4.4 7.4 ± 0.1 5° 2.2 ± 0.1 8 ± 0.1 2.6 ± 0.1 2.95 ± 0.1 1.6 ± 0.1 Fig. 19 - Tape and Reel Packing (3000 parts per reel) SOLDER PROFILES HANDLING AND STORAGE CONDITIONS 300 Temperature (°C) max. 260 °C 245 °C 255 °C 240 °C 217 °C 250 ESD level: HBM class 2 Floor life: unlimited Conditions: Tamb < 30 °C, RH < 85 % 200 Moisture sensitivity level 1, according to J-STD-020 max. 30 s 150 max. 100 s max. 120 s 100 max. ramp down 6 °C/s 50 max. ramp up 3 °C/s 0 0 19841 50 100 150 200 250 300 Time (s) Fig. 20 - Lead (Pb)-free Reflow Solder Profile According to J-STD-020 for SMD Devices Document Number: 84314 8 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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