g1126-02 etc kgpd1005e

GaAsP photodiode
G1126-02
G1127-02
G2119
Schottky type for UV to visible range
Features
Applications
Low dark current
Analytical instruments
High UV sensitivity
Color identification
UV detection
Structure / Absolute maximum ratings
Type no.
Dimensional
outline/
Window
material
/Q*
/Q
/Q
G1126-02
G1127-02
G2119
Package
TO-5
TO-8
Ceramic
Effective
Photosensitive
photosensitive
area size
area
(mm)
2.3 × 2.3
4.6 × 4.6
10.1 × 10.1
Absolute maximum ratings
Reverse
voltage
VR max
Operating
temperature
Topr
Storage
temperature
Tstg
(V)
(°C)
(°C)
5
-10 to +60
-20 to +70
(mm2)
5.2
21
98
* Window material Q: quartz glass
Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the
product within the absolute maximum ratings.
Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)
Type no.
G1126-02
G1127-02
G2119
Peak
Spectral
sensitivity
response
waverange
length
λ
λp
(nm)
(nm)
190 to 680
610
Photosensitivity
S
(A/W)
Short circuit
current
Isc
100 lx
Hg GaP He-Ne
line LED laser Min.
254 nm 560 nm 633 nm (μA)
0.25
0.18 0.035 0.17 0.17 0.9
5
λp
Dark
current
ID
max.
Typ. VR=10 mV VR=1 V
(μA) (pA) (pA)
0.3
5
50
1.2
10
100
6
100 5000
Temp.
Terminal
Rise time
Shunt
coefficient
capacitance
tr
resistance
of
Ct
VR=0 V
Rsh
ID
VR=0 V
RL=1 kΩ
VR=10 mV
TCID
f=10 kHz
Min. Typ.
(times/°C) (μs)
(pF) (GΩ) (GΩ)
3.5
1800
2
15
1.07
12
7000
1
8
55
25000 0.1 0.7
www.hamamatsu.com
Noise
equivalent
power
NEP
(W/Hz1/2)
5.8 × 10-15
8.0 × 10-15
2.4 × 10-14
1
GaAsP photodiode
G1126-02, G1127-02, G2119
Spectral response
Photosensitivity temperature characteristic
(Typ. Ta=25 °C)
0.2
0.1
0
190
300
400
500
600
700
(Typ.)
+1.5
Temperature coefficient (%/°C)
Photosensitivity (A/W)
0.3
+1.0
+0.5
0
-0.5
190
800
300
400
500
600
700
Wavelength (nm)
Wavelength (nm)
KGPDB0034EA
KGPDB0035EA
Rise time vs. load resistance
Dark current vs. reverse voltage
(Typ. Ta=25 °C, VR=0 V)
10 ms
800
(Typ. Ta=25 °C)
1 nA
G2119
1 ms
G2119
100 pA
Dark current
Rise time
G1127-02
100 µs
G1126-02
10 µs
G1127-02
10 pA
G1126-02
1 pA
1 µs
100 ns 2
10
103
104
5
10
106
Load resistance (Ω)
100 fA
0.001
0.01
0.1
1
10
Reverse voltage (V)
KGPDB0036EA
KGPDB0037EA
2
GaAsP photodiode
G1126-02, G1127-02, G2119
Shunt resistance vs. ambient temperature
Short circuit current linearity
(Typ. VR=10 mV)
10 TΩ
10-2
Short circuit current (A)
1 TΩ
G1126-02
100 GΩ
G1127-02
10 GΩ
1 GΩ
G2119
100 MΩ
RL=100 Ω
10-4
-6
10
10-8
10-10
10-12
10-14
10 MΩ
-20
Refer to NEP value in characteristic table.
-16
0
20
40
60
80
10
-16
10
-14
10
Ambient temperature (°C)
10-12 10-10
10-8
10-6
10-4
10-2
100
Incident light level (W)
KGPDB0038EA
KGPDB0008EB
Dimensional outline (unit: mm)
G1126-02
G1127-02
9.1 ± 0.2
13.9 ± 0.2
Photosensitive
surface
0.45
Lead
20
0.45
Lead
5.0 ± 0.2
12.35 ± 0.1
1.9
Photosensitive
surface
Window
10.5 ± 0.1
15
8.1 ± 0.1
4.1 ± 0.2
Window
5.9 ± 0.1
2.9
Shunt resistance
(Typ. Ta=25 °C, A light source fully illuminated)
100
7.5 ± 0.2
5.08 ± 0.2
Mark ( 1.4)
Connected
to case
Connected
to case
KGPDA0036EA
KGPDA0035EA
3
GaAsP photodiode
G1126-02, G1127-02, G2119
G2119
Photosensitive area
0.1
10.5
0.9
0.3
Photosensitive
surface
2.15 ± 0.1
15.0 ± 0.15
16.5 ± 0.2
0.5
Lead
15.1 ± 0.3
12.5 ± 0.2
13.7 ± 0.3
Anode
terminal mark
KGPDA0011EA
Information described in this material is current as of May, 2012.
Product specifications are subject to change without prior notice due to improvements or other reasons. Before assembly into final products, please contact
us for the delivery specification sheet to check the latest information.
Type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(X)" which means preliminary specifications or
a suffix "(Z)" which means developmental specifications.
The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that
one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product
use.
Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission.
www.hamamatsu.com
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Thorshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
China: Hamamatsu Photonics (China) Co., Ltd.: 1201 Tower B, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866
Cat. No. KGPD1005E02 May 2012 DN
4