GaAsP photodiode G1126-02 G1127-02 G2119 Schottky type for UV to visible range Features Applications Low dark current Analytical instruments High UV sensitivity Color identification UV detection Structure / Absolute maximum ratings Type no. Dimensional outline/ Window material /Q* /Q /Q G1126-02 G1127-02 G2119 Package TO-5 TO-8 Ceramic Effective Photosensitive photosensitive area size area (mm) 2.3 × 2.3 4.6 × 4.6 10.1 × 10.1 Absolute maximum ratings Reverse voltage VR max Operating temperature Topr Storage temperature Tstg (V) (°C) (°C) 5 -10 to +60 -20 to +70 (mm2) 5.2 21 98 * Window material Q: quartz glass Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings. Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted) Type no. G1126-02 G1127-02 G2119 Peak Spectral sensitivity response waverange length λ λp (nm) (nm) 190 to 680 610 Photosensitivity S (A/W) Short circuit current Isc 100 lx Hg GaP He-Ne line LED laser Min. 254 nm 560 nm 633 nm (μA) 0.25 0.18 0.035 0.17 0.17 0.9 5 λp Dark current ID max. Typ. VR=10 mV VR=1 V (μA) (pA) (pA) 0.3 5 50 1.2 10 100 6 100 5000 Temp. Terminal Rise time Shunt coefficient capacitance tr resistance of Ct VR=0 V Rsh ID VR=0 V RL=1 kΩ VR=10 mV TCID f=10 kHz Min. Typ. (times/°C) (μs) (pF) (GΩ) (GΩ) 3.5 1800 2 15 1.07 12 7000 1 8 55 25000 0.1 0.7 www.hamamatsu.com Noise equivalent power NEP (W/Hz1/2) 5.8 × 10-15 8.0 × 10-15 2.4 × 10-14 1 GaAsP photodiode G1126-02, G1127-02, G2119 Spectral response Photosensitivity temperature characteristic (Typ. Ta=25 °C) 0.2 0.1 0 190 300 400 500 600 700 (Typ.) +1.5 Temperature coefficient (%/°C) Photosensitivity (A/W) 0.3 +1.0 +0.5 0 -0.5 190 800 300 400 500 600 700 Wavelength (nm) Wavelength (nm) KGPDB0034EA KGPDB0035EA Rise time vs. load resistance Dark current vs. reverse voltage (Typ. Ta=25 °C, VR=0 V) 10 ms 800 (Typ. Ta=25 °C) 1 nA G2119 1 ms G2119 100 pA Dark current Rise time G1127-02 100 µs G1126-02 10 µs G1127-02 10 pA G1126-02 1 pA 1 µs 100 ns 2 10 103 104 5 10 106 Load resistance (Ω) 100 fA 0.001 0.01 0.1 1 10 Reverse voltage (V) KGPDB0036EA KGPDB0037EA 2 GaAsP photodiode G1126-02, G1127-02, G2119 Shunt resistance vs. ambient temperature Short circuit current linearity (Typ. VR=10 mV) 10 TΩ 10-2 Short circuit current (A) 1 TΩ G1126-02 100 GΩ G1127-02 10 GΩ 1 GΩ G2119 100 MΩ RL=100 Ω 10-4 -6 10 10-8 10-10 10-12 10-14 10 MΩ -20 Refer to NEP value in characteristic table. -16 0 20 40 60 80 10 -16 10 -14 10 Ambient temperature (°C) 10-12 10-10 10-8 10-6 10-4 10-2 100 Incident light level (W) KGPDB0038EA KGPDB0008EB Dimensional outline (unit: mm) G1126-02 G1127-02 9.1 ± 0.2 13.9 ± 0.2 Photosensitive surface 0.45 Lead 20 0.45 Lead 5.0 ± 0.2 12.35 ± 0.1 1.9 Photosensitive surface Window 10.5 ± 0.1 15 8.1 ± 0.1 4.1 ± 0.2 Window 5.9 ± 0.1 2.9 Shunt resistance (Typ. Ta=25 °C, A light source fully illuminated) 100 7.5 ± 0.2 5.08 ± 0.2 Mark ( 1.4) Connected to case Connected to case KGPDA0036EA KGPDA0035EA 3 GaAsP photodiode G1126-02, G1127-02, G2119 G2119 Photosensitive area 0.1 10.5 0.9 0.3 Photosensitive surface 2.15 ± 0.1 15.0 ± 0.15 16.5 ± 0.2 0.5 Lead 15.1 ± 0.3 12.5 ± 0.2 13.7 ± 0.3 Anode terminal mark KGPDA0011EA Information described in this material is current as of May, 2012. Product specifications are subject to change without prior notice due to improvements or other reasons. Before assembly into final products, please contact us for the delivery specification sheet to check the latest information. Type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(X)" which means preliminary specifications or a suffix "(Z)" which means developmental specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Thorshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 China: Hamamatsu Photonics (China) Co., Ltd.: 1201 Tower B, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866 Cat. No. KGPD1005E02 May 2012 DN 4