VS-6ESH06-M3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 6 A FRED Pt® FEATURES • Hyperfast recovery time, reduced Qrr, and soft recovery • 175 °C maximum operating junction temperature K • For PFC, CRM/CCM, snubber operation K Anode 1 Cathode Anode 2 1 2 • Low forward voltage drop • Low leakage current • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C TO-277A (SMPC) • Meets JESD 201 class 2 whisker test • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION / APPLICATIONS PRODUCT SUMMARY Package State of the art hyperfast recovery rectifiers specifically designed with optimized performance of forward voltage drop and hyperfast recovery time. TO-277A (SMPC) IF(AV) 6A VR 600 V VF at IF 1.05 V trr (typ.) 33 ns TJ max. 175 °C Diode variation Single die The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness, and reliability characteristics. These devices are intended for use in PFC, boost, lighting, in the AC/DC section of SMPS, freewheeling and clamp diodes. The extremely optimized stored charge and low recovery current minimize the switching losses and reduce power dissipation in the switching element. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 600 V Peak repetitive reverse voltage VRRM Average rectified forward current IF(AV) TSp = 145 °C 6 Non-repetitive peak surge current IFSM TJ = 25 °C 90 Operating junction and storage temperatures TJ, TStg A -65 to +175 °C ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Breakdown voltage, blocking voltage SYMBOL VBR, VR Forward voltage VF Reverse leakage current IR Junction capacitance CT TEST CONDITIONS MIN. TYP. MAX. 600 - - IF = 6 A - 1.30 1.80 IF = 6 A, TJ = 150 °C - 1.05 1.55 IR = 100 μA VR = VR rated - - 5 TJ = 150 °C, VR = VR rated - 50 300 VR = 600 V - 8 - UNITS V μA pF Revision: 16-Jul-15 Document Number: 94984 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-6ESH06-M3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL Reverse recovery time TEST CONDITIONS trr Reverse recovery charge - 33 - - - 40 TJ = 25 °C - 40 - - 75 - - 6.8 - - 11 - TJ = 125 °C Qrr MAX. IF = 1 A, dIF/dt = 50 A/μs, VR = 30 V TJ = 25 °C IRRM TYP. IF = 0.5 A, IR = 1 A, Irr = 0.25 A TJ = 125 °C Peak recovery current MIN. IF = 6 A dIF/dt = 500 A/μs VR = 400 V UNITS ns A TJ = 25 °C - 140 - TJ = 125 °C - 400 - MIN. TYP. MAX. UNITS nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS Maximum junction and storage temperature range TJ, TStg -65 - 175 °C Thermal resistance, junction to solder pad RthJ-Sp - 2.4 3.5 °C/W Approximate weight g oz. Case style TO-277A (SMPC) 100 NEH6 1000 IR - Reverse Current (μA) IF - Instantaneous Forward Current (A) Marking device 0.1 0.0035 10 TJ = 175 °C 1 TJ = 150 °C TJ = 125 °C TJ = 25 °C 0.1 175 °C 100 150 °C 10 125 °C 1 0.1 25 °C 0.01 0.001 0.2 0.6 1.0 1.4 1.8 2.2 0 100 200 300 400 500 600 VF - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 16-Jul-15 Document Number: 94984 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-6ESH06-M3 www.vishay.com Vishay Semiconductors 10 RMS limit Average Power Loss (W) CT - Junction Capacitance (pF) 100 10 8 6 4 2 0 1 0 100 200 300 400 500 600 0 2 4 6 8 10 VR - Reverse Voltage (V) IF(AV) - Average Forward Current (A) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage Fig. 5 - Forward Power Loss Characteristics 180 140 120 170 125 °C 100 DC 160 80 trr (ns) Allowable Case Temperature (°C) D = 0.02 D = 0.05 D = 0.1 D = 0.2 D = 0.5 DC 60 Square wave (D = 0.50) 80 % rated VR applied 150 25 °C 40 20 IF = 6 A See note (1) 140 0 0 1 2 3 4 5 6 7 100 1000 IF(AV) - Average Forward Current (A) dIF/dt (A/μs) Fig. 4 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 6 - Typical Reverse Recovery Time vs. dIF/dt 410 125 °C 360 Qrr (nC) 310 260 210 25 °C 160 110 60 IF = 6 A 10 100 1000 dIF/dt (A/μs) Fig. 7 - Typical Stored Charge vs. dIF/dt Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 5); PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = rated VR Revision: 16-Jul-15 Document Number: 94984 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-6ESH06-M3 www.vishay.com Vishay Semiconductors (3) trr IF ta tb 0 (4) Qrr (2) IRRM 0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM (1) dIF/dt (4) Qrr - area under curve defined by trr and IRRM (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current Qrr = (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. trr x IRRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 8 - Reverse Recovery Waveform and Definitions ORDERING INFORMATION TABLE Device code VS- 6 E S H 06 -M3 1 2 3 4 5 6 7 1 - Vishay Semiconductors product 2 - Current rating (6 = 6 A) 3 - Circuit configuration: E = single diode 4 - S = SMPC package 5 - Process type, H = hyperfast recovery 6 - Voltage code (06 = 600 V) 7 - -M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER REEL MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION VS-6ESH06-M3/86A 1500 1500 7" diameter plastic tape and reel VS-6ESH06-M3/87A 6500 6500 13" diameter plastic tape and reel LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95570 Part marking information www.vishay.com/doc?95565 Packaging information www.vishay.com/doc?88869 Revision: 16-Jul-15 Document Number: 94984 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors TO-277A (SMPC) DIMENSIONS in inches (millimeters) 0.187 (4.75) 0.175 (4.45) 0.016 (0.40) 0.006 (0.15) K 0.262 (6.65) 0.250 (6.35) 0.242 (6.15) 0.238 (6.05) 2 1 0.047 (1.20) 0.039 (1.00) 0.171 (4.35) 0.167 (4.25) 0.146 (3.70) 0.134 (3.40) Mounting Pad Layout 0.087 (2.20) 0.075 (1.90) 0.189 (4.80) MIN. 0.189 (4.80) 0.173 (4.40) 0.186 (4.72) MIN. 0.268 (6.80) 0.155 (3.94) NOM. 0.030 (0.75) NOM. 0.049 (1.24) 0.037 (0.94) 0.050 (1.27) MIN. 0.084 (2.13) NOM. 0.053 (1.35) 0.041 (1.05) 0.041 (1.04) 0.055 (1.40) MIN. Conform to JEDEC® TO-277A Revision: 03-Sep-14 Document Number: 95570 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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