SFX www.vishay.com Vishay Electro-Films Thin Film, Top-Contact Megohm Resistor FEATURES • Wire bondable • Megohm resistance range: 0.51 M to 20 M • Chip size: 0.040 inches square standard, 0.030 inches square and 0.055 inches square optional • Case: 0404 • Reduced hybrid size Product may not be to scale • Resistor material: Tantalum nitride, self-passivating The SFX series resistor chips extends the range of available resistance to 20 M These offer one of the best combinations of small size and high value available. • Oxidized silicon substrate • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 The SFXs are manufactured using Vishay Electro-Films (EFI) sophisticated thin film equipment and manufacturing technology. The SFXs are 100 % electrically tested and visually inspected to MIL-STD-883, method 2032 class H or class K. APPLICATIONS The SFX series megohm resistor chips are designed for use in hybrid packages which require small-size high-value resistors. TEMPERATURE COEFFICIENT OF RESISTANCE, VALUES, AND TOLERANCES PARAMETER VALUE Total Resistance Range Standard Tolerances TCR Tightest Standard Tolerance Available 0.5 % 0.1 % ± 50 ppm/°C ± 100 ppm/°C ± 250 ppm/°C UNIT 360K to 30M ± 0.1, ± 0.5 % ± 50, ± 100, ± 250, ± 350 ppm/°C SIZE (in inches) MIN. MAX. 0.030 x 0.030 360 k 10 M 0.040 x 0.040 510 k 20 M 0.055 x 0.055 1 M 30 M ± 350 ppm/°C 360 kΩ 2 MΩ 3.3 MΩ 10 MΩ 30 MΩ STANDARD ELECTRICAL SPECIFICATIONS PARAMETER VALUE UNIT Noise, MIL-STD-202, Method 308 - 12 typ. dB Moisture Resistance, MIL-STD-202 Method 106, (Passivated only) ± 0.5 max. R/R % Stability, 1000 h, + 125 °C, 10 mW ± 1.0 max. R/R % - 55 to + 125 °C Operating Temperature Range Thermal Shock, MIL-STD-202, Method 107, Test Condition F ± 0.25 max. R/R % High Temperature Exposure, + 150 °C, 100 h ± 0.5 max. R/R % Dielectric Voltage Breakdown 400 V Insulation Resistance 1012 min. Operating Voltage 100 max. V 0.020 W ± 0.25 max. R/R % DC Power Rating at + 70 °C (Derated to zero at + 175 °C) 5 x Rated Power Short-Time Overload, + 25 °C, 5 s Revision: 04-Mar-13 1 Document Number: 61018 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SFX www.vishay.com Vishay Electro-Films DIMENSIONS in inches (millimeters) A B ± 0.002 (± 0.05) ± 0.002 (± 0.05) 0.030 (0.76) 0.027 (0.69) 0.040 (1.01) 0.037 (0.94) 0.055 (1.40) 0.052 (1.32) A 0.005 B 0.005 SCHEMATIC MECHANICAL SPECIFICATIONS PARAMETER VALUE Chip Size Per table above Chip Thickness 0.010" ± 0.002" (0.254 mm ± 0.050 mm) Chip Substrate Material Oxidized silicon, 10 kÅ minimum SiO2 Resistor Material Tantalum nitride, self-passivating Bonding Pad Size 0.005" x 0.005" (0.127 mm x 0.127 mm) Number of Pads 2 Pad Material 10 kÅ minimum aluminum (gold pads available) Backing None, lapped semiconductor silicon (gold back available) GLOBAL PART NUMBER INFORMATION Global Part Number: SFX25003KR4GGKWS Global Part Number Description: SFX 2.5M 10 % 0 ppm/°C/- 250 ppm/°C 40 Au Au K WS S F X MODEL RESISTANCE SFX The first 4 digits are significant figures of resistance High value TaN on silicon Revision: 04-Mar-13 2 5 RESISTANCE MULTIPLIER CODE 2 = 100 3 = 1000 4 = 10 000 0 TOLERANCE CODE B = 0.1 % C = 0.25 % D = 0.5 % F = 1.0 % G = 2.0 % J = 5.0 % K = 10.0 % 0 3 K TCR (ppm/°C) R SIZE E = ± 25 3 = 30 x 30 C = ± 50 4 = 40 x 40 K = ± 100 5 = 55 x 55 M = ± 250 W = ± 350 I = 0/- 200 R = 0/- 250 P = 0/- 350 4 G TERMINATION G = Au A = Al 2 G BACK METAL K VISUAL CLASS W S PACKAGING CODE G = Au H = Class H WS = N = None K = Class K Waffle pack, 100 min, 1 mult Document Number: 61018 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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