SFM Datasheet

SFM
www.vishay.com
Vishay Electro-Films
Thin Film Top-Contact Resistor
FEATURES
• Wire bondable
• Small size: 0.020 inches square
• Case: 0202
• Resistance range: 1.0  to 1 M
• DC power rating: 250 mW
Product may not be to scale
• Oxidized silicon substrate for good power dissipation
The SFM series single-value resistor chips offer a small size,
wide ohmic value range and excellent power capacity.
The SFMs tantalum nitride resistor material offers excellent
resistance to high moisture environments.
The SFMs are manufactured using Vishay Electro-Films
(EFI) sophisticated thin film equipment and manufacturing
technology. The SFMs are 100 % electrically tested and
visually inspected to MIL-STD-883.
• Resistor material tantalum nitride, self passivating
• Moisture resistant
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
Vishay EFI SFM top-contact resistor chips are designed to
handle substantial power loads in many types of hybrid
packages. They are ideally suited for this purpose because
of their small size.
TEMPERATURE COEFFICIENT OF RESISTANCE, VALUES, AND TOLERANCES
PARAMETER
VALUE
Total Resistance Range
1 to 1M

± 0.1, ± 0.5, ± 1
%
± 25, ± 50, ± 100, ± 250
ppm/°C
Standard Tolerances
TCR
UNIT
Tightest Standard Tolerance Available
1%
0.5 %
0.1 %
± 25 ppm/°C
± 50 ppm/°C
± 100 ppm/°C
± 250 ppm/°C
1Ω
10 Ω
30 Ω
100 Ω
200 kΩ 360 kΩ 620 kΩ 1 MΩ
STANDARD ELECTRICAL SPECIFICATIONS
PARAMETER
VALUE
UNIT
Noise, MIL-STD-202, Method 308
100  to 250 k
< 100  or > 251 k
- 35 typ.
- 20 typ.
dB
Moisture Resistance, MIL-STD-202 Method 106
± 0.5 max. R/R
%
Stability, 1000 h, + 125 °C, 125 mW
± 0.25 max. R/R
%
Operating Temperature Range
- 55 to + 150
°C
Thermal Shock, MIL-STD-202, Method 107, Test Condition F
± 0.25 max. R/R
%
High Temperature Exposure, + 150 °C, 100 h
± 0.5 max. R/R
%
Dielectric Voltage Breakdown
200
V
Insulation Resistance
1012 min.

Operating Voltage
100 max.
V
0.250
W
± 0.25 max. R/R
%
DC Power Rating at + 70 °C (Derated to zero at + 175 °C)
5 x Rated Power Short-Time Overload, + 25 °C, 5 s
Revision: 25-Feb-13
Document Number: 61017
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SFM
www.vishay.com
Vishay Electro-Films
CONFIGURATIONS in inches
0.004
0.020
0.020
0.007
0.016
0.020
0.006
0.004
0.004
0.004
0.016
TYPICAL RANGE
820 Ω to 1 MΩ
TYPICAL RANGE
30 Ω to 819 Ω
TYPICAL RANGE
1 Ω to 29 Ω
SCHEMATIC
MECHANICAL SPECIFICATIONS
PARAMETER
VALUE
Chip Size
0.020" x 0.020" ± 0.003" (0.5 mm x 0.5 mm ± 0.076 mm)
Chip Thickness
0.010" ± 0.002" (0.254 mm ± 0.05 mm)
Chip Substrate Material
Oxidized silicon, 10 kÅ minimum SiO2
Resistor Material
Tantalum nitride, self-passivating
Bonding Pad Size
0.004" x 0.004" (0.10 mm x 0.10 mm)
Number of Pads
2
Pad Material
25 kÅ minimum aluminum
Backing
None, lapped semiconductor silicon
GLOBAL PART NUMBER INFORMATION
Global Part Number: SFM50000FKANHWS
Global Part Number Description: SFM 5K 1 %, 100 ppm/°C, Al, no back metal, class H, WS
S
F
M
MODEL
RESISTANCE
SFM
First 4 digits are
significant figures
of resistance
5
0
0
0
RESISTANCE
MULTIPLIER
CODE
TOLERANCE
CODE
(%)
C = 0.001
B = 0.01
A = 0.1
0=1
1 = 10
2 = 100
3 = 1000
B = 0.1
C = 0.25
D = 0.5
F = 1.0
G = 2.0
H = 2.5
J = 5.0
K = 10
0
F
TCR
(ppm/°C)
E = ± 25
C = ± 50
K = ± 100
M = ± 250
R = 0/- 250
K
TERMINATION
G = Au
A = Al
A
N
BACK
METAL
H
VISUAL
CLASS
W
S
PACKAGING
CODE
G = Au
H = Class H WS = Waffle pack
N = None K = Class K 100 min, 1 mult
Historical Part Number: WSFM04550000F (will continue to be accepted)
Revision: 25-Feb-13
Document Number: 61017
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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www.vishay.com
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Revision: 02-Oct-12
1
Document Number: 91000