sia511dj-rc

SiA511DJ_RC
Vishay Siliconix
R-C Thermal Model Parameters
DESCRIPTION
The parametric values in the R-C thermal model have
been derived using curve-fitting techniques. These
techniques are described in "A Simple Method of
Generating Thermal Models for a Power MOSFET"[1].
When implemented in P-Spice, these values have
matching characteristic curves to the Single Pulse
Transient Thermal Impedance curves for the
MOSFET.
R-C values for the electrical circuit in the Foster/Tank
and Cauer/Filter configurations are included.
Note:
For a detailed explanation of implementing these values in
P-SPICE, refer to Application Note AN609 Thermal Simulations Of
Power MOSFETs on P-SPICE Platform.
R-C THERMAL MODEL FOR TANK CONFIGURATION
R-C VALUES FOR TANK CONFIGURATION
Thermal Resistance (°C/W)
Junction to
Ambient Nch
Ambient Pch
Foot
Case Nch
Case Pch
RT1
12.4956
12.4956
N/A
764.1000 m
764.1000 m
RT2
27.7856
27.7856
N/A
5.6063
5.6063
RT3
26.5938
26.5938
N/A
5.7425
5.7425
RT4
43.1250
43.1250
N/A
3.8871
3.8871
Thermal Capacitance (Joules/°C)
Junction to
Ambient Nch
Ambient Pch
Foot
Case Nch
Case Pch
CT1
90.6762 u
90.6762 u
N/A
5.0483 m
5.0483 m
452.2021 u
CT2
1.9927 m
1.9927 m
N/A
452.2021 u
CT3
34.1260 m
34.1260 m
N/A
54.4164 u
54.4164 u
CT4
1.1120
1.1120
N/A
486.1773 u
486.1773 u
This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data
sheet of the same number for guaranteed specification limits.
Document Number: 73994
Revision: 21-Jun-07
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SiA511DJ_RC
Vishay Siliconix
R-C THERMAL MODEL FOR FILTER CONFIGURATION
R-C VALUES FOR FILTER CONFIGURATION
Thermal Resistance (°C/W)
Junction to
Ambient Nch
Ambient Pch
Foot
Case Nch
Case Pch
RF1
14.2316
14.2316
N/A
8.6635
8.6635
RF2
31.2018
31.2018
N/A
4.0091
4.0091
RF3
23.4768
23.4768
N/A
1.6771
1.6771
RF4
41.0898
41.0898
N/A
1.6503
1.6503
Case Nch
Case Pch
Thermal Capacitance (Joules/°C)
Junction to
Ambient Nch
Ambient Pch
Foot
CF1
92.1040 u
92.1040 u
N/A
43.9117 u
43.9117 u
CF2
2.0224 m
2.0224 m
N/A
226.4934 u
226.4934 u
CF3
41.6061 m
41.6061 m
N/A
229.4698 u
229.4698 u
CF4
1.1219
1.1219
N/A
103.4306 u
103.4306 u
Note: NA indicates not applicable
Reference:
[1] "A Simple Method of Generating Thermal Models for a Power MOSFET" by Wharton McDaniel and Kandarp Pandya, IEEE / SEMITHERM 2002
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Document Number: 73994
Revision: 21-Jun-07
SiA511DJ_RC
Vishay Siliconix
Document Number: 73994
Revision: 21-Jun-07
www.vishay.com
3
SiA511DJ_RC
Vishay Siliconix
www.vishay.com
4
Document Number: 73994
Revision: 21-Jun-07