SiA511DJ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1]. When implemented in P-Spice, these values have matching characteristic curves to the Single Pulse Transient Thermal Impedance curves for the MOSFET. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. Note: For a detailed explanation of implementing these values in P-SPICE, refer to Application Note AN609 Thermal Simulations Of Power MOSFETs on P-SPICE Platform. R-C THERMAL MODEL FOR TANK CONFIGURATION R-C VALUES FOR TANK CONFIGURATION Thermal Resistance (°C/W) Junction to Ambient Nch Ambient Pch Foot Case Nch Case Pch RT1 12.4956 12.4956 N/A 764.1000 m 764.1000 m RT2 27.7856 27.7856 N/A 5.6063 5.6063 RT3 26.5938 26.5938 N/A 5.7425 5.7425 RT4 43.1250 43.1250 N/A 3.8871 3.8871 Thermal Capacitance (Joules/°C) Junction to Ambient Nch Ambient Pch Foot Case Nch Case Pch CT1 90.6762 u 90.6762 u N/A 5.0483 m 5.0483 m 452.2021 u CT2 1.9927 m 1.9927 m N/A 452.2021 u CT3 34.1260 m 34.1260 m N/A 54.4164 u 54.4164 u CT4 1.1120 1.1120 N/A 486.1773 u 486.1773 u This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data sheet of the same number for guaranteed specification limits. Document Number: 73994 Revision: 21-Jun-07 www.vishay.com 1 SiA511DJ_RC Vishay Siliconix R-C THERMAL MODEL FOR FILTER CONFIGURATION R-C VALUES FOR FILTER CONFIGURATION Thermal Resistance (°C/W) Junction to Ambient Nch Ambient Pch Foot Case Nch Case Pch RF1 14.2316 14.2316 N/A 8.6635 8.6635 RF2 31.2018 31.2018 N/A 4.0091 4.0091 RF3 23.4768 23.4768 N/A 1.6771 1.6771 RF4 41.0898 41.0898 N/A 1.6503 1.6503 Case Nch Case Pch Thermal Capacitance (Joules/°C) Junction to Ambient Nch Ambient Pch Foot CF1 92.1040 u 92.1040 u N/A 43.9117 u 43.9117 u CF2 2.0224 m 2.0224 m N/A 226.4934 u 226.4934 u CF3 41.6061 m 41.6061 m N/A 229.4698 u 229.4698 u CF4 1.1219 1.1219 N/A 103.4306 u 103.4306 u Note: NA indicates not applicable Reference: [1] "A Simple Method of Generating Thermal Models for a Power MOSFET" by Wharton McDaniel and Kandarp Pandya, IEEE / SEMITHERM 2002 www.vishay.com 2 Document Number: 73994 Revision: 21-Jun-07 SiA511DJ_RC Vishay Siliconix Document Number: 73994 Revision: 21-Jun-07 www.vishay.com 3 SiA511DJ_RC Vishay Siliconix www.vishay.com 4 Document Number: 73994 Revision: 21-Jun-07