Si3586DV_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1]. When implemented in P-Spice, these values have matching characteristic curves to the Single Pulse Transient Thermal Impedance curves for the MOSFET. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. Note: For a detailed explanation of implementing these values in P-SPICE, refer to Application Note AN609 Thermal Simulations Of Power MOSFETs on P-SPICE Platform. R-C THERMAL MODEL FOR TANK CONFIGURATION R-C VALUES FOR TANK CONFIGURATION Thermal Resistance (°C/W) Junction to Ambient Nch Ambient Pch Case Foot Nch Foot Pch RT1 41.3839 41.3839 N/A 40.4167 40.4167 RT2 17.8424 17.8424 N/A 22.9343 22.9343 RT3 45.3883 45.3883 N/A 17.3862 17.3862 RT4 45.3854 45.3854 N/A 9.2628 9.2628 Thermal Capacitance (Joules/°C) Junction to Ambient Nch Ambient Pch Case Foot Nch Foot Pch CT1 16.2284 m 16.2284 m N/A 3.0281 m 3.0281 m CT2 372.8238 u 372.8238 u N/A 1.3611 m 1.3611 m CT3 2.2494 m 2.2494 m N/A 52.5443 m 52.5443 m CT4 1.8817 1.8817 N/A 185.6658 u 185.6658 u This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data sheet of the same number for guaranteed specification limits. Document Number: 74664 Revision: 04-May-07 www.vishay.com 1 Si3586DV_RC Vishay Siliconix R-C THERMAL MODEL FOR FILTER CONFIGURATION R-C VALUES FOR FILTER CONFIGURATION Thermal Resistance (°C/W) Junction to Ambient Nch Ambient Pch Case Foot Nch Foot Pch RF1 22.8768 22.8768 N/A 20.1603 20.1603 RF2 52.3054 52.3054 N/A 46.1553 46.1553 RF3 29.9906 29.9906 N/A 14.2631 14.2631 RF4 44.8272 44.8272 N/A 9.4213 9.4213 Thermal Capacitance (Joules/°C) Junction to Ambient Nch Ambient Pch Case Foot Nch Foot Pch CF1 297.9209 u 297.9216 u N/A 229.8178 u 229.8183 u CF2 1.7172 m 1.7173 m N/A 1.2102 m 1.2102 m CF3 18.6653 m 18.6654 m N/A 10.6983 m 10.6983 m CF4 1.8697 1.8697 N/A 118.2024 m 118.2025 m Note: NA indicates not applicable Reference: [1] "A Simple Method of Generating Thermal Models for a Power MOSFET" by Wharton McDaniel and Kandarp Pandya, IEEE / SEMITHERM 2002 www.vishay.com 2 Document Number: 74664 Revision: 04-May-07 Si3586DV_RC Vishay Siliconix Document Number: 74664 Revision: 04-May-07 www.vishay.com 3 Si3586DV_RC Vishay Siliconix www.vishay.com 4 Document Number: 74664 Revision: 04-May-07