TCLD1000 www.vishay.com Vishay Semiconductors Optocoupler, Photodarlington Output, SOP-4L, Long Mini-Flat Package C E 4 3 FEATURES • Low profile package • Darlington output • Extra low coupling capacity - typical 0.2 pF • High common mode rejection 1 2 A C • Creepage current resistance according to VDE 0303/IEC 60112 comparative tracking index: CTI ≥ 175 17295-5 • Creepage distance > 8 mm • Tested acc. 60950: AM4: 1997 clause 2.9.6. DESCRIPTION • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 The TCLD1000 consists of a darlington phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-lead SO6L package. APPLICATIONS • Switch-mode power supplies AGENCY APPROVALS • Line receiver • UL1577, file no. E76222 • Computer peripheral interface • CSA 22.2 bulletin 5A, double protection • Microprocessor system interface • BSI IEC 60950; IEC 60065 • Reinforced isolation provides circuit protection against electrical shock (safety class II) • DIN EN 60747-5-2 (VDE 0884)/DIN EN 60747-5-5 pending • Circuits for safe protective separation against electrical shock according to safety class II (reinforced isolation): - for appl. class I to IV at mains voltage ≤ 300 V - for appl. class I to III at mains voltage ≤ 600 V according to DIN EN 60747-5-2 (VDE 0884) ORDERING INFORMATION T C L D 1 0 0 SOP-4L 0 10.2 mm PART NUMBER AGENCY CERTIFIED/PACKAGE CTR (%) UL, cUL, VDE, BSI > 600 SOP-4L, mini-flat, long TCLD1000 ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT INPUT Reverse voltage VR 6 V Forward current IF 60 mA Forward surge current Power dissipation Junction temperature Rev. 2.0, 21-Mar-14 tp ≤ 10 μs IFSM 1.5 A Pdiss 100 mW Tj 125 °C Document Number: 83516 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TCLD1000 www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT Collector emitter voltage VCEO 35 V Emitter collector voltage VECO 7 V OUTPUT Collector current IC 80 mA ICM 100 mA Pdiss 150 mW Tj 125 °C Isolation test voltage (RMS) VISO 5000 VRMS Total power dissipation Ptot 250 mW Operating ambient temperature range Tamb -55 to +100 °C Storage temperature range Tstg -55 to +150 °C Soldering temperature (1) Tsld 260 °C Collector peak current tp/T = 0.5, tp ≤ 10 ms Power dissipation Junction temperature COUPLER Notes • Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. (1) Wave soldering three cycles are allowed. Also refer to “Assembly Instructions” (www.vishay.com/doc?80054). ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL IF = 20 mA VR = 0 V, f = 1 MHz MIN. TYP. MAX. VF 1.1 1.4 Cj 50 UNIT INPUT Forward voltage Junction capacitance V pF OUTPUT Collector emitter voltage IC = 1 mA VCEO 32 V Emitter collector voltage IE = 100 μA VECO 7 V VCE = 10 V, IF = 0 A ICEO Collector emitter saturation voltage IF = 20 mA, IC = 5 mA VCEsat Cut-off frequency VCE = 5 V, IF = 10 mA, RL = 100 Ω fc 10 kHz f = 1 MHz Ck 0.3 pF Collector ermitter leakage current 15 100 nA 1 V COUPLER Coupling capacitance Note • Minimum and maximum values are tested requierements. Typical values are characteristics of the device and are the result of engineering evaluations. Typical values are for information only and are not part of the testing requirements. CURRENT TRANSFER RATIO (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. TYP. IC/IF VCE = 2 V, IF = 1 mA CTR 600 800 Rev. 2.0, 21-Mar-14 MAX. UNIT % Document Number: 83516 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TCLD1000 www.vishay.com Vishay Semiconductors SAFETY AND INSULATION RATED PARAMETERS PARAMETER TEST CONDITION SYMBOL MIN. Partial discharge test voltage routine test 100 %, ttest = 1 s Vpd 2 Partial discharge test voltage lot test (sample test) tTr = 60 s, ttest = 10 s, (see figure 2) VIOTM 8 kV Vpd 1.68 kV Insulation resistance TYP. MAX. UNIT kV VIO = 500 V RIO 1012 Ω VIO = 500 V, Tamb = 100 °C RIO 1011 Ω VIO = 500 V, Tamb = 150 °C (construction test only) RIO 109 Ω Isi 130 mA Pso 265 mW Forward current Power dissipation Rated impulse voltage Safety temperature VIOTM 8 kV Tsi 150 °C Clearance distance 8.0 mm Creepage distance 8.0 mm Insulation distance (internal) 0.40 mm Ptot - Total Power Dissipation (mW) Note • According to DIN EN 60747-5-2 (VDE 0884) (see figure 2). This optocoupler is suitable for safe electrical isolation only within the safety ratings. Compliance with the safety ratings shall be ensured by means of suitable protective circuits. 300 VIOTM Coupled device t1, t2 t3 , t4 ttest tstres 250 200 Phototransistor Vpd 150 VIOWM VIORM IR-diode 100 = 1 s to 10 s =1s = 10 s = 12 s 50 0 0 0 96 11700 40 80 t3 ttest t4 120 Tamb - Ambient Temperature (°C) tTr = 60 s t1 13930 t2 t stres t Fig. 1 - Derating Diagram Fig. 2 - Test Pulse Diagram for Sample Test According to DIN EN 60747-5-2 (VDE 0884); IEC 60747-5-5 SWITCHING CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) TEST CONDITION SYMBOL Rise time PARAMETER VCE = 2 V, IC = 10 mA, RL = 100 Ω, (see figure 3) tr 300 μs Turn-off time VCE = 2 V, IC = 10 mA, RL = 100 Ω, (see figure 3) toff 250 μs Rev. 2.0, 21-Mar-14 MIN. TYP. MAX. UNIT Document Number: 83516 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TCLD1000 www.vishay.com Vishay Semiconductors IF IF 0 0 + V CC IF tp IC I C = 10 mA t 100 % 90 % R G = 50 Ω tp = 0.01 T t p = 50 s 10 % 0 tr Channel I Channel II 50 Ω RL 14779 td Oscilloscope R I = 1 MΩ C I = 20 pF ts t on tp td tr t on (= td + tr) Pulse duration Delay time Rise time Turn-on time Fig. 3 - Test Circuit, Non-Saturated Operation t tf t off ts tf t off (= ts + tf) Storage time Fall time Turn-off time 96 11698 Fig. 4 - Switching Times TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) I F = 10 mA VF - Forward Voltage (V) 1.2 1.1 1.0 0.9 0.8 0 14389 40 60 80 100 Tamb - Ambient Temperature (°C) 1.1 1.0 0.9 0.8 0.7 0.6 0.5 - 30 - 20 - 10 0 10 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature (°C) 14391 Fig. 7 - Relative Current Transfer Ratio vs. Ambient Temperature 10 000 10 1 VCE = 10 V IF = 0 1000 100 10 1 0.4 0.8 1.2 1.6 V F - Forward Voltage (V) 20 2.0 Fig. 6 - Forward Current vs. Forward Voltage Rev. 2.0, 21-Mar-14 1.2 100 000 100 14390 1.3 I CEO - Collector Dark Current, with Open Base (nA) I F - Forward Current (mA) 1000 VCE = 5 V I F = 1 mA 1.4 20 Fig. 5 - Forward Voltage vs. Ambient Temperature 0.1 0.0 1.5 CTR rel - Relative Current Transfer Ratio 1.3 14392 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature (°C) Fig. 8 - Collector Dark Current vs. Ambient Temperature Document Number: 83516 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TCLD1000 www.vishay.com Vishay Semiconductors 1000 100 I F = 2 mA I C - Collector Current (mA) IC - Collector Current (mA) VCE = 2 V 100 10 1 1 mA 10 0.5 mA 0.1 mA 0.1 0.1 0.1 0.1 1 10 I F - Forward Current (mA) 14393 0.2 mA 1 100 Fig. 9 - Collector Current vs. Forward Current 1 10 100 VCE - Collector Emitter Voltage (V) 14394 Fig. 10 - Collector Current vs. Collector Emitter Voltage PACKAGE DIMENSIONS in millimeters 2.30 max. 4.10 max. 10.20 3.80 + 0.30 - 0.40 0.20 2.00 0.10 ± 0.10 + 0.10 - 0.05 7.50 ± 0.20 0.45 ± 0.1 0.70 + 0.30 - 0.40 2.54 nom. 4 3 2.54 Possible footprint 0.90 8.20 1 22533 10.80 technical drawings according to DIN specifications 2 Pin no. 1 identification PACKAGE MARKING TCLD1000 V YWW 68 Rev. 2.0, 21-Mar-14 Document Number: 83516 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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