VS-GT300FD060N www.vishay.com Vishay Semiconductors DIAP Low Profile 3-Levels Half Bridge Inverter Stage, 300 A FEATURES • Trench plus Field Stop IGBT technology • FRED Pt® antiparallel and clamping diodes • Short circuit capability • Low stray internal inductances • Low switching loss • UL approved file E78996 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATION PRODUCT SUMMARY • Solar converters VCES 600 V VCE(ON) typical at IC = 300 A 1.72 V IC at TC = 25 °C 379 A Speed 8 kHz to 30 kHz Package DIAP low profile Circuit 3-levels half bridge inverter stage • Uninterruptible power supplies BENEFITS • Direct mounting on heatsink • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCE(sat) ABSOLUTE MAXIMUM RATINGS PARAMETER Operating junction temperature SYMBOL TEST CONDITIONS MAX. TJ 175 Storage temperature range TStg -40 to +175 RMS isolation voltage VISOL Collector to emitter voltage VCES 600 Gate to emitter voltage VGES 20 Pulsed collector current ICM 650 Clamped inductive load current ILM Continuous collector current Power dissipation IC PD TJ = 25 °C, all terminals shorted, f = 50 Hz, t = 1 s °C 3500 650 TC = 25 °C UNITS 379 TC = 80 °C 288 TC = 25 °C 1250 TC = 80 °C 792 10 ms sine or 6 ms rectangular pulse, TJ = 25 °C 800 V A W D5 - D6 CLAMPING DIODE Repetitive peak reverse voltage VRRM Single pulse forward current IFSM Diode continuous forward current IF Power dissipation PD 600 TC = 25 °C 215 TC = 80 °C 161 TC = 25 °C 500 TC = 80 °C 317 10 ms sine or 6 ms rectangular pulse, TJ = 25 °C 800 TC = 25 °C 215 TC = 80 °C 161 TC = 25 °C 500 TC = 80 °C 317 V A W D - D2 - D3 - D4 AP DIODE Single pulse forward current IFSM Diode continuous forward current IF Power dissipation PD A W Note • Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. Revision: 24-May-16 Document Number: 93569 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GT300FD060N www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS VGE = 0 V, IC = 500 μA 600 - - VGE = 15 V, IC = 300 A - 1.72 2.5 VGE = 15 V, IC = 300 A, TJ = 125 °C - 1.93 - 2.9 4.8 7.5 VCE = VGE, IC = 1 mA (25 °C to 125 °C) - -17.8 - mV/°C Q1 - Q2 - Q3 - Q4 TRENCH IGBT Collector to emitter breakdown voltage BVCES Collector to emitter voltage VCE(ON) Gate threshold voltage VGE(th) Temperature coefficient of threshold voltage VGE(th)/TJ VCE = VGE, IC = 16.8 mA V Forward transconductance gfe VCE = 20 V, IC = 300 A - 315 - S Transfer characteristics VGE VCE = 20 V, IC = 300 A - 7.9 - V Zero gate voltage collector current ICES VGE = 0 V, VCE = 600 V - 0.4 250 VGE = 0 V, VCE = 600 V, TJ = 125 °C - 300 - Gate to emitter leakage current IGES VGE = ± 20 V, VCE = 0 V - - ± 500 Cathode to anode blocking voltage VBR IR = 100 μA 600 - - Forward voltage drop VFM IF = 150 A - 2.17 2.7 μA nA D5 - D6 CLAMPING DIODE Reverse leakage current IRM IF = 150 A, TJ = 125 °C - 1.61 - VR = 600 V - 0.25 200 VR = 600 V, TJ = 125 °C - 140 - IF = 150 A - 2.17 2.7 IF = 150 A, TJ = 125 °C - 1.61 - MIN. TYP. MAX. V μA D1 - D2 - D3 - D4 AP DIODE Forward voltage drop VFM V SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS UNITS Q1 - Q2 - Q3 - Q4 TRENCH IGBT Total gate charge (turn-on) Qg IC = 300 A - 750 - Gate to ermitter charge (turn-on) Qge VCC = 400 V - 210 - Gate to collector charge (turn-on) Qgc VGE = 15 V - 300 - Turn-on switching loss EON 2.1 - Turn-off switching loss EOFF - 3.1 - Total switching loss ETOT IC = 150 A, VCC = 300 V VGE = 15 V, Rg = 10 L = 500 μH , TJ = 25 °C - Turn-on switching loss EON Turn-off switching loss EOFF Total switching loss ETOT Turn-on switching loss EON Turn-off switching loss EOFF Total switching loss ETOT Turn-on delay time Rise time Turn-off delay time Fall time td(on) tr td(off) tf - 5.2 - - 8.6 - - 15.4 - - 24 - - 2.6 - IC = 150 A - 3.7 - VCC = 300 V - 6.3 - - 453 - - 120 - - 366 - - 119 - IC = 300 A, VCC = 300 V VGE = 15 V, Rg = 22 L = 500 μH, TJ = 25 °C VGE = 15 V Rg = 10 L = 500 μH TJ = 125 °C nC mJ ns Revision: 24-May-16 Document Number: 93569 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GT300FD060N www.vishay.com Vishay Semiconductors SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise noted) Q1 - Q2 - Q3 - Q4 TRENCH IGBT Turn-on switching loss EON Turn-off switching loss EOFF Total switching loss ETOT Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time - 10.7 - IC = 300 A VCC = 300 V VGE = 15 V Rg = 22 L = 500 μH TJ = 125 °C - 15.6 - - 26.3 - - 840 - - 279 - - 566 - VGE = 0 V VCC = 30 V f = 1 MHz mJ ns tf - 129 - Input capacitance Cies - 23.3 - Output capacitance Coes - 1.7 - Reverse transfer capacitance Cres - 0.7 - - - 5.0 μs VR = 200 V IF = 50 A dl/dt = 500 A/μs - 105 - ns - 13.5 - A - 712 - nC VR = 200 V IF = 50 A dl/dt = 500 A/μs, TJ = 125 °C - 166 - ns VR = 200 V IF = 50 A dl/dt = 500 A/μs - VR = 200 V IF = 50 A dl/dt = 500 A/μs, TJ = 125 °C - Reverse bias safe operating area RBSOA TJ = 175 °C, IC = 650 A VCC = 270 V, VP = 600 V Rg = 22 , VGE = 15 V to 0 V Short circuit safe operating area SCSOA VCC = 400 V, Vp = 600 V Rg = 10 , VGE = 15 V to 0 V nF D5 - D6 CLAMPING DIODE Diode reverse recovery time trr Diode peak reverse current Irr Diode recovery charge Qrr Diode reverse recovery time trr Diode peak reverse current Irr Diode recovery charge Qrr - 24.5 - A - 2050 - nC - 105 - ns - 13.5 - A 712 - nC 166 - ns 24.5 - A 2050 - nC D1 - D2 - D3 - D4 AP DIODE Diode reverse recovery time trr Diode peak reverse current Irr Diode recovery charge Qrr Diode reverse recovery time trr Diode peak reverse current Irr Diode recovery charge Qrr THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER Junction to case IGBT thermal resistance (per switch) Junction to case diode thermal resistance (per diode) Case to sink, flat, greased surface (per module) SYMBOL RthJC RthCS MIN. TYP. MAX. - - 0.12 - - 0.3 - 0.05 - Mounting torque, case to heatsink: M6 screw 4 - 6 Mounting torque, case to terminal: 1, 2, 3, 4: M5 screw 2 - 4 Weight - 270 - UNITS °C/W Nm g Revision: 24-May-16 Document Number: 93569 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GT300FD060N www.vishay.com Vishay Semiconductors 2.4 600 550 500 2.2 TJ = 25 °C VCE (V) 400 IC (A) 300 A 2 450 TJ = 125 °C 350 300 TJ = 175 °C 250 1.8 1.6 150 A 1.4 200 80 A 1.2 150 100 1 50 0.8 0 0 0.5 1 1.5 2 2.5 3 3.5 0 4 20 40 60 80 100 120 140 160 180 VCE (V) TJ - Junction Temperature (°C) Fig. 1 - Typical Trench IGBT Output Characteristics, VGE = 15 V Fig. 4 - Typical Trench IGBT Collector to Emitter Voltage vs. Junction Temperature, VGE = 15 V 600 600 550 500 500 VGE = 15 V 450 400 450 400 VGE = 12 V 350 VGE = 9 V ICE (A) IC (A) VCE = 20 V 550 VGE = 18 V 300 250 350 300 TJ = 125 °C 250 200 200 150 150 100 100 50 50 TJ = 25 °C 0 0 0 0.5 1 1.5 2 2.5 3 3.5 3.0 4 4.0 5.0 6.0 7.0 8.0 9.0 10.0 VGE (V) Fig. 2 - Typical Trench IGBT Output Characteristics, TJ = 125 °C Fig. 5 - Typical Trench IGBT Transfer Characteristics 200 6.0 180 5.5 160 5.0 140 4.5 DC 120 100 80 VGE(th) (V) Allowable Case Temperature (°C) VCE (V) TJ = 25 °C 4.0 3.5 3.0 TJ = 125 °C 2.5 60 40 2.0 20 1.5 1.0 0 0 50 100 150 200 250 300 350 400 450 IC - Continuous Collector Current (A) Fig. 3 - Maximum Trench IGBT Continuous Collector Current vs. Case Temperature (per switch) 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 IC (mA) Fig. 6 - Typical Trench IGBT Gate Threshold Voltage Revision: 24-May-16 Document Number: 93569 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GT300FD060N www.vishay.com Vishay Semiconductors 100 100 175 °C 10 1 125 °C ICES (mA) ICES (mA) 1 TJ = 175 °C 10 0.1 0.01 TJ = 125 °C 0.1 0.01 0.001 0.001 TJ = 25 °C 25 °C 0.0001 0.0001 0.00001 100 200 300 400 500 0.00001 100 600 200 300 Fig. 7 - Typical Trench IGBT Zero Gate Voltage Collector Current 3.8 500 3.4 TJ = 175 °C 3.0 Energy (mJ) 400 350 IF (A) 600 Fig. 10 - Typical Diode Reverse Leakage Current 600 550 300 500 VCES (V) VCES (V) 450 400 TJ = 125 °C 250 TJ = 25 °C 200 150 100 EOFF 2.6 2.2 EON 1.8 1.4 50 0 1.0 0 0.5 1 1.5 2 2.5 3 3.5 4 40 60 80 VFM (V) 120 140 160 IC (A) Fig. 8 - Typical Diode Forward Characteristics Fig. 11 - Typical Trench IGBT Energy Loss vs. IC, TJ = 125 °C, VCC = 300 V, Rg = 10 , VGE = 15 V, L = 500 μH 200 1000 td(on) 180 160 Switching time (ns) Allowable Case Temperature (°C) 100 140 120 DC 100 80 60 td(off) tf 100 tr 40 20 10 0 0 40 80 120 160 200 240 40 60 80 100 120 140 160 IF - Continuous Forward Current (A) IC (A) Fig. 9 - Maximum Diode Forward Current vs. Case Temperature Fig. 12 - Typical IGBT Switching Time vs. IC, TJ = 125 °C, VCC = 300 V, Rg = 10 , VGE = 15 V, L = 500 μH Revision: 24-May-16 Document Number: 93569 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GT300FD060N www.vishay.com Vishay Semiconductors 17 10 000 15 Switching time (ns) Energy (mJ) 13 EOFF 11 9 EON 7 5 td(on) 1000 td(off) tr tf 100 3 10 1 20 60 100 140 180 220 260 300 20 340 23 26 29 32 35 38 41 44 47 50 IC (A) Rg (Ω) Fig. 13 - Typical Trench IGBT Energy Loss vs. IC, TJ = 125 °C, VCC = 300 V, Rg = 22 , VGE = 15 V, L = 500 μH Fig. 16 - Typical Trench IGBT Switching Time vs.Rg, TJ = 125 °C, VCC = 300 V, IC = 300 A, VGE = 15 V, L = 500 μH 1000 1000 td(on) tf 100 IC (A) Switching time (ns) td(off) tr 100 10 1 10 20 60 100 140 180 220 260 300 0 340 100 200 400 500 600 700 VCE (V) IC (A) Fig. 14 - Typical IGBT Switching Time vs. IC, TJ = 125 °C, VCC = 300 V, Rg = 22 , VGE = 15 V, L = 500 μH Fig. 17 - Trench IGBT Reverse Bias SOA TJ = 175 °C, VGE = 15 V, Rg = 22 32 240 29 220 200 26 TJ = 125 °C 180 23 trr (ns) Energy (mJ) 300 20 EOFF 17 160 140 TJ = 25 °C 120 14 100 EON 11 80 8 20 23 26 29 32 35 38 41 44 47 50 60 100 200 300 400 500 Rg (Ω) dIF/dt (A/μs) Fig. 15 - Typical Trench IGBT Energy Loss vs.Rg, TJ = 125 °C, VCC = 300 V, IC = 300 A, VGE = 15 V, L = 500 μH Fig. 18 - Typical Diode Reverse Recovery Time vs. dIF/dt, Vrr = 200 V, IF = 50 A Revision: 24-May-16 Document Number: 93569 6 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GT300FD060N 28 26 24 22 20 18 16 14 12 10 8 6 4 2 100 Vishay Semiconductors 2400 2200 TJ = 125 °C 2000 TJ = 125 °C 1800 1600 Qrr (nC) Irr (A) www.vishay.com 1400 1200 1000 800 TJ = 25 °C TJ = 25 °C 600 400 200 0 200 300 400 100 500 200 300 400 500 dIF/dt (A/μs) dIF/dt (A/μs) Fig. 19 - Typical Diode Reverse Recovery Current vs. dIF/dt, Vrr = 200 V, IF = 50 A Fig. 20 - Typical Diode Reverse Recovery Charge vs. dIF/dt, Vrr = 200 V, IF = 50 A ZthJC - Thermal Impedance Junction to Case (°C/W) 1 0.1 0.5 0.01 0.2 0.1 0.05 0.001 0.02 0.01 DC 0.0001 0.00001 0.0001 0.001 0.01 0.1 1 10 t1 - Rectangular Pulse Duration (s) Fig. 21 - Maximum Thermal Impedance ZthJC Characeristics (Trench IGBT) ZthJC - Thermal Impeadnce Junction to Case (°C/W) 1 0.5 0.1 0.01 0.2 0.1 0.05 0.02 0.01 DC 0.001 0.0001 0.00001 0.0001 0.001 0.01 0.1 1 10 t1 - Rectangular Pulse Duration (s) Fig. 22 - Maximum Thermal Impedance ZthJC Characeristics (Diode) Revision: 24-May-16 Document Number: 93569 7 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GT300FD060N www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- G T 300 F D 060 N 1 2 3 4 5 6 7 8 1 - Vishay Semiconductors product 2 - Insulated Gate Bipolar Transistor 3 - T = Trench IGBT 4 - Current rating (300 = 300 A) 5 - F = Three level circuit configuration 6 - Package Indicator D = Dual INT-A-PAK Low Profile 7 - Voltage rating (060 = 600 V) 8 - N = Ultrafast CIRCUIT CONFIGURATION 1 Q1 D1 5 6 Q2 D2 D5 7 8 4 2 Q3 D3 D6 9 10 Q4 D4 11 12 3 LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95515 Revision: 24-May-16 Document Number: 93569 8 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors DIAP Low Profile - 4 Leads DIMENSIONS in millimeters 48 ± 0.5 48 ± 0.5 8 10 7 9 18.2 ± 0.5 15 ± 0.4 27 ± 0.4 48 ± 0.3 6 17 ± 0.5 5 12 5.1 ± 0.5 27 ± 0.5 12 11 27 ± 0.5 62 ± 1 21.9 ± 0.5 15 ± 0.5 7.2 16 ± 0.5 13.5 2.8 x 0.5 7.5 M5 screwing depth max. 8 Ø6 .4 93 ± 0.3 108 ± 1 Revision: 10-Nov-14 Document Number: 95515 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors ECONO3 4 Pack DIMENSIONS in millimeters and inches 22 21 20 19 18 17 16 15 23 24 14 13 25 26 12 11 1 2 3 4 5 6 7 8 9 10 Revision: 21-Apr-16 Document Number: 95686 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000