CPV362M4FPbF www.vishay.com Vishay Semiconductors IGBT SIP Module (Fast IGBT) FEATURES • Fully isolated printed circuit board mount package • Switching-loss rating includes all “tail” losses • HEXFRED® soft ultrafast diodes • Optimized for medium speed, see fig. 1 for current vs. frequency curve • Designed and qualified for industrial level • UL approved file E78996 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 IMS-2 PRODUCT SUMMARY OUTPUT CURRENT IN A TYPICAL 5.0 kHz MOTOR DRIVE VCES 600 V IRMS per phase (3.1 kW total) with TC = 90 °C 11 A TJ 125 °C Supply voltage 360 VDC Power factor 0.8 Modulation depth See fig. 1 115 % VCE(on) (typical) at IC = 4.8 A, 25 °C 1.41 V Speed 1 kHz to 8 kHz DESCRIPTION The IGBT technology is the key to the advanced line of IMS (Insulated Metal Substrate) power modules. These modules are more efficient than comparable bipolar transistor modules, while at the same time having the simpler gate-drive requirements of the familiar power MOSFET. This superior technology has now been coupled to a state of the art materials system that maximizes power throughput with low thermal resistance. This package is highly suited to motor drive applications and where space is at a premium. Package SIP Circuit Three phase inverter ABSOLUTE MAXIMUM RATINGS PARAMETER Collector to emitter voltage Continuous collector current, each IGBT Pulsed collector current Clamped inductive load current SYMBOL TEST CONDITIONS VCES IC MAX. UNITS 600 V TC = 25 °C 8.8 TC = 100 °C 4.8 ICM Repetitive rating; VGE = 20 V, pulse width limited by maximum junction temperature. See fig. 20 26 ILM VCC = 80 % (VCES), VGE = 20 V, L = 10 μH, RG = 50 See fig. 19 800 TC = 100 °C 3.4 A Diode continuous forward current IF Diode maximum forward current IFM 26 Gate to emitter voltage VGE ± 20 V 2500 VRMS Isolation voltage Maximum power dissipation, each IGBT Operating junction and storage temperature range VISOL PD Any terminal to case, t = 1 min TC = 25 °C 23 TC = 100 °C 9.1 TJ, TStg W -40 to +150 Soldering temperature For 10 s Mounting torque 6-32 or M3 screw °C 300 (0.063" (1.6 mm) from case) 5 to 7 (0.55 to 0.8) lbf · in (N · m) THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER Junction to case, each IGBT, one IGBT in conduction Junction to case, each diode, one diode in conduction Case to sink, flat, greased surface Weight of module SYMBOL TYP. MAX. RthJC (IGBT) - 5.5 RthJC (diode) - 9.0 RthCS (module) 0.1 - 20 (0.7) - UNITS °C/W g (oz.) Revision: 10-Jun-15 Document Number: 94361 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 CPV362M4FPbF www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Collector to emitter breakdown voltage SYMBOL V(BR)CES Temperature coeff. of breakdown voltage V(BR)CES TJ TEST CONDITIONS VGE = 0 V, IC = 250 μA Pulse width 80 μs, duty factor 0.1 % VGE = 0 V, IC = 1.0 mA Gate threshold voltage Gate to emitter leakage current Temperature coeff. of threshold voltage VCE(on) VGE(th) IGES VGE(th) /TJ Forward transconductance gfe Zero gate voltage collector current ICES Diode forward voltage drop VFM TYP. MAX. UNITS 600 - - V - 0.72 - V/°C - 1.41 1.7 - 1.66 - IC = 4.8 A, TJ = 150 °C - 1.42 - VCE = VGE, IC = 250 μA IC = 4.8 A Collector to emitter saturation voltage MIN. VGE = 15 V See fig. 2, 5 IC = 8.8 A V 3.0 - 6.0 VGE = ± 20 V - - ± 100 nA VGE = 0 V, IC = 1.0 mA - -11 - mV/°C 2.9 5.0 - S VCE = 100 V, IC = 4.8 A Pulse width 5.0 μs; single shot - VGE = 0 V, VCE = 600 V - VGE = 0 V, VCE = 600 V, TJ = 150 °C - - 1700 IC = 8.0 A IC = 8.0 A, TJ = 150 °C - 1.4 1.7 - 1.3 1.6 MIN. TYP. MAX. - 30 45 - 4.0 6.0 20 See fig. 13 250 μA V SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL Total gate charge (turn on) Qg Gate to emitter charge (turn on) Qge TEST CONDITIONS IC = 4.8 A VCC = 400 V See fig. 8 Gate to collector charge Qgc - 13 Turn-on delay time td(on) - 49 - tr - 22 - - 200 300 - 214 320 - 0.23 - - 0.33 - - 0.45 0.70 - 48 - Rise time Turn-off delay time Fall time td(off) tf Turn-on switching loss Eon Turn-off switching loss Eoff Total switching loss Ets Turn-on delay time td(on) Rise time Turn-off delay time Fall time tr td(off) tf Total switching loss Ets Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres Diode reverse recovery time trr Diode peak reverse recovery current Irr Diode reverse recovery charge Qrr Diode peak rate of fall of recovery during tb dI(rec)M /dt TJ = 25 °C IC = 4.8 A, VCC = 480 V VGE = 15 V, RG = 50 Energy losses include “tail” and diode reversev recovery. See fig. 9, 10, 18 TJ = 150 °C, IC = 4.8 A, VCC = 480 V VGE = 15 V, RG = 50 Energy losses include “tail” and diode reverse recovery See fig. 10, 11, 18 VGE = 0 V VCC = 30 V TJ = 25 °C TJ = 125 °C TJ = 25 °C TJ = 125 °C TJ = 25 °C TJ = 125 °C TJ = 25 °C TJ = 125 °C See fig. 7 See fig. 14 See fig. 15 See fig. 16 See fig. 17 IF = 8.0 A VR = 200 V dI/dt = 200 A/μs - 25 - - 435 - - 364 - - 0.93 - - 340 - - 63 - - 5.9 - - 37 55 - 55 90 - 3.5 50 - 4.5 8.0 - 65 138 - 124 360 - 240 - - 210 - UNITS nC ns mJ ns mJ pF ns A nC A/μs Revision: 10-Jun-15 Document Number: 94361 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 CPV362M4FPbF www.vishay.com Vishay Semiconductors 9 2.63 7 Load Current (A) 2.34 TC = 90 °C TJ = 125 °C Power factor = 0.8 Modulation depth = 1.15 VCC = 50 % of rated voltage 6 2.05 1.75 5 1.46 4 1.17 3 0.88 2 0.58 1 0.29 0 0.1 1 Total Output Power (kW) 8 0.00 100 10 f - Frequency (kHz) TJ = 25 °C TJ = 150 °C 10 VGE = 15 V 20 µs pulse width 1 1 IC - Collector to Emitter Current (A) Maximum DC Collector Current (A) 100 8 6 4 2 0 25 50 75 100 125 VCE - Collector to Emitter Voltage (V) TC - Case Temperature (°C) Fig. 2 - Typical Output Characteristics Fig. 4 - Maximum Collector Current vs. Case Temperature 100 TJ = 150 °C 10 TJ = 25 °C VCC = 50 V 5 µs pulse width 1 5 10 10 VCE - Collector to Emitter Voltage (V) IC - Collector to Ermitter Current (A) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of Fundamental) 6 7 8 9 10 11 12 13 14 2.5 150 VGE = 15 V 80 µs pulse width IC = 9.6 A 2.0 IC = 4.8 A 1.5 IC = 2.4 A 1.0 - 60 - 40 - 20 0 20 40 60 80 100 120 140 160 VGE - Gate to Emitter Voltage (V) TJ - Junction Temperature (°C) Fig. 3 - Typical Transfer Characteristics Fig. 5 - Typical Collector to Emitter Voltage vs. Junction Temperature Revision: 10-Jun-15 Document Number: 94361 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 CPV362M4FPbF www.vishay.com Vishay Semiconductors ZthJC - Thermal Impedance 10 1 PDM D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 0.1 Single pulse (thermal response) 0.01 0.00001 0.0001 0.001 t1 t2 Notes: 1. Duty factor D = t1/t2 2. Peak TJ = PDM x ZthJC + TC 0.01 0.1 1 10 t1 - Rectangular Pulse Duration (s) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction to Case 0.46 VGE = 0 V, f = 1 MHz Cies = Cge + Cce shorted Cres = Cgc Coes = Cce + Cgc 800 600 Total Switching Losses (mJ) C - Capacitance (pF) 1000 Cies 400 Coes 200 Cres 0 0.44 0.43 0.42 1 20 10 100 20 30 40 50 VCE - Collector to Emitter Voltage (V) RG - Gate Resistance (Ω) Fig. 7 - Typical Capacitance vs. Collector to Emitter Voltage Fig. 9 - Typical Switching Losses vs. Gate Resistance 10 VCC = 400 V IC = 4.8 A 16 12 8 4 0 0 10 Total Switching Losses (mJ) VGE - Gate to Emitter Voltage (V) 0.45 VCC = 480 V VGE = 15 V TJ = 25 °C IC = 4.8 A 6 12 18 24 30 QG - Total Gate Charge (nC) Fig. 8 - Typical Gate Charge vs. Gate to Emitter Voltage RG = 50 Ω VGE = 15 V VCC = 480 V IC = 9.6 A 1 IC = 4.8 A IC = 2.4 A 0.1 - 60 - 40 - 20 0 20 40 60 80 100 120 140 160 TJ - Junction Temperature (°C) Fig. 10 - Typical Switching Losses vs. Junction Temperature Revision: 10-Jun-15 Document Number: 94361 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 CPV362M4FPbF www.vishay.com 100 RG = 50 Ω TJ = 150 °C VCC = 480 V VGE = 15 V 1.5 IF = 16 A 1.0 IF = 8.0 A 40 IF = 4.0 A 20 0 2 4 6 8 0 100 10 1000 IC - Collector to Emitter Current (A) dIF/dt (A/µs) Fig. 11 - Typical Switching Losses vs. Collector to Emitter Current Fig. 14 - Typical Reverse Recovery Time vs. dIF/dt 100 100 VGE = 20 V TJ = 125 °C IIRRM - (A) VR = 200 V TJ = 125 °C TJ = 25 °C Safe operating area 10 IF = 16 A IF = 8.0 A 10 IF = 4.0 A 1 100 1 1 10 100 1000 1000 VCE - Collector to Emitter Voltage (V) dIF/dt - (A/µs) Fig. 12 - Turn-Off SOA Fig. 15 - Typical Recovery Current vs. dIF/dt 500 100 400 VR = 200 V TJ = 125 °C TJ = 25 °C 10 Qrr - (nC) IC - Collector to Emitter Current (A) 60 0.5 0.0 IF - Instantaneous Forward Current (A) VR = 200 V TJ = 125 °C TJ = 25 °C 80 trr (ns) Total Switching Losses (mJ) 2.0 Vishay Semiconductors TJ = 150 °C TJ = 125 °C TJ = 25 °C 300 IF = 16 A 200 IF = 8.0 A 1 100 IF = 4.0 A 0.1 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 VFM - Forward Voltage Drop Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current 0 100 1000 dIF/dt - (A/µs) Fig. 16 - Typical Stored Charge vs. dIF/dt Revision: 10-Jun-15 Document Number: 94361 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 CPV362M4FPbF www.vishay.com Vishay Semiconductors 10 000 dI(rec)M/dt - (A/µs) VR = 200 V TJ = 125 °C TJ = 25 °C Gate voltage D.U.T. 10 % + VG + VG IF = 4.0 A 1000 D.U.T. voltage and current Vce IF = 8.0 A VCC IF = 16 A 10 % IC Ipk 90 % IC 5 % VCE tr td(on) IC ∫ Eon = 100 100 1000 t1 t2 VCE IC dt t1 t2 dIF/dt - (A/µs) Fig. 17 - Typical dI(REC)M/dt vs dIF/dt Fig. 18c - Test Waveforms of Circuit of Fig. 18a, Defining Eon, td(on), tr trr IC Same type device as D.U.T. Qrr = tx 10 % VCC Vpk ∫ trr IC dt tx 10 % Irr VCC Irr 430 µF 80 % of VCE D.U.T. Diode recovery waveforms Erec = Diode reverse recovery energy t3 Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf t4 Vd IC dt t3 t4 Fig. 18d - Test Waveforms of Circuit of Fig. 18a, Defining Erec, trr, Qrr, Irr 90 % V GE VG Gate signal device under test + VGE Current D.U.T. VCE 90 % IC IC 10 % VCE ∫ Voltage in D.U.T. IC 5 % IC td(off) tf Current in D1 ∫ t1 + 5 µs Eoff = VCE IC dt t1 t0 t1 t1 t2 t2 Fig. 18b - Test Waveforms of Circuit of Fig. 18a, Defining Eoff, td(off), tf Fig. 18e - Macro Waveforms for Figure 18a’s Test Circuit Revision: 10-Jun-15 Document Number: 94361 6 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 CPV362M4FPbF www.vishay.com Vishay Semiconductors L 50 V RL= D.U.T. 1000 V VC* 0 - 480 V 480 V 4 x IC at 25 °C 6000 µF 100 V Fig. 19 - Clamped Inductive Load Test Circuit Fig. 20 - Pulsed Collector Current Test Circuit CIRCUIT CONFIGURATION 1 D3 D1 3 Q1 9 Q3 Q2 16 D4 12 7 Q5 10 4 D2 6 D5 15 Q4 D6 18 13 Q6 19 LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95066 Revision: 10-Jun-15 Document Number: 94361 7 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors IMS-2 (SIP) DIMENSIONS in millimeters (inches) Ø 3.91 (0.154) 2x 62.43 (2.458) 7.87 (0.310) 53.85 (2.120) 5.46 (0.215) 21.97 (0.865) 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 0.38 (0.015) 3.94 (0.155) 1.27 (0.050) 4.06 ± 0.51 (0.160 ± 0.020) 5.08 (0.200) 6x 1.27 (0.050) 13 x 2.54 (0.100) 6x 3.05 ± 0.38 (0.120 ± 0.015) 0.76 (0.030) 13 x 0.51 (0.020) 6.10 (0.240) IMS-2 Package Outline (13 Pins) Notes (1) Tolerance uless otherwise specified ± 0.254 mm (0.010") (2) Controlling dimension: inch (3) Terminal numbers are shown for reference only Document Number: 95066 Revision: 30-Jul-07 For technical questions, contact: [email protected] www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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