SFH618A, SFH6186 www.vishay.com Vishay Semiconductors Optocoupler, Phototransistor Output, Low Input Current FEATURES A 1 4 C C 2 3 E • • • • • • • • 1 Good CTR linearity depending on forward current Low CTR degradation High collector emitter voltage, VCEO = 55 V Isolation test voltage, 5300 VRMS Low coupling capacitance End stackable, 0.100" (2.54 mm) spacing High common mode transient immunity Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • • • • 1 i179061-1 DESCRIPTION The SFH618A (DIP) and SFH6186 (SMD) feature a high current transfer ratio, low coupling capacitance and high isolation voltage. These couplers have a GaAs infrared diode emitter, which is optically coupled to silicon planar phototransistor detector, and is incorporated in a plastic DIP-4 or SMD package. The coupling devices are designed for signal transmission between two electrically separated circuits.The couplers are end-stackable with 2.54 mm lead spacing. Creepage and clearance distances of > 8 mm achieved with option 6. Telecom Industrial controls Battery powered equipment Office machines AGENCY APPROVALS The safety application model number covering all products in this datasheet is SFH618A. This model number should be used when consulting safety agency documents. • UL1577, file no. E52744 system code H or J, double protection • CSA 93751 • DIN EN 60747-5-5 (VDE 0884-5) available with option 1 • BSI IEC 60950; IEC 60065 • FIMKO ORDERING INFORMATION S F H 6 1 8 # PART NUMBER - # CTR BIN X 0 # PACKAGE OPTION # DIP-# Option 6 7.62 mm 10.16 mm Option 7 Option 9 T TAPE AND REEL > 0.7 mm AGENCY CERTIFIED/PACKAGE UL, CUL DIP-4 DIP-4, 400 mil, option 6 SMD-4, option 7 SMD-4, option 9 VDE, UL, CUL > 0.1 mm CTR (%) 1 mA 63 to 125 SFH618A-2 SFH6186-2T (1) 63 to 125 100 to 200 SFH618A-3 SFH618A-3X006 SFH6186-3T (1), SFH6186-3T1 (2), SFH6186-3X002T (1) 100 to 200 DIP-4 SFH618A-3X001 DIP-4, 400 mil, option 6 SFH618A-3X016 SMD-4, option 7 SFH618A-3X017T (1) SMD-4, option 9 SFH6186-3X001T (1) Notes • Additional options may be possible, please contact sales office (1) Also available in tubes, do not put T to the end (2) Product is rotated 90° in tape and reel cavity 160 to 320 SFH618A-4 SFH6186-4T (1) 250 to 500 SFH618A-5 SFH618A-5X007T (1) SFH6186-5T (1), SFH6186-5T1 (2) 160 to 320 250 to 500 SFH618A-4X001 SFH618A-4X016 SFH6186-4X001T SFH618A-5X016 SFH618A-5X017T (1) SFH6186-5X001T (1) Document Number: 83673 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Rev. 2.6, 31-Aug-15 SFH618A, SFH6186 www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT INPUT Reverse voltage VR 6 V Pdiss 70 mW IF 60 mA Collector emitter voltage VCEO 55 V Emitter collector voltage VECO 7 V Power dissipation Forward current OUTPUT IC 50 mA IC 100 mA Pdiss 150 mW Storage temperature range Tstg -55 to +150 °C Ambient temperature range Tamb -55 to +100 °C Tj 125 °C Tsld 260 °C Collector current tp ≤ 1 ms Power dissipation COUPLER Junction temperature max. 10 s, dip soldering distance to seating plane ≥ 1.5 mm Soldering temperature (1) Notes • Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. (1) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through hole devices (DIP). Ptot - Power Dissipation (mW) 200 150 Detector 100 LED 50 0 0 20 40 60 80 100 120 Tamb - Ambient Temperature (°C) Fig. 1 - Permissible Power Dissipation vs. Ambient Temperature Document Number: 83673 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Rev. 2.6, 31-Aug-15 SFH618A, SFH6186 www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT INPUT Forward voltage IF = 5 mA VF 1.1 1.5 V Reverse current VR = 6 V IR 0.01 10 μA Capacitance VR = 0 V, f = 1 MHz CO 25 pF Rthja 1070 K/W VCE = 10 V ICEO 10 VCE = 5 V, f = 1 MHz CCE 7 pF Rthja 500 K/W SFH618A-2 VCEsat 0.25 0.4 V SFH6186-2 VCEsat 0.25 0.4 V SFH618A-3 VCEsat 0.25 0.4 V SFH6186-3 VCEsat 0.25 0.4 V SFH618A-4 VCEsat 0.25 0.4 V SFH6186-4 VCEsat 0.25 0.4 V SFH618A-5 VCEsat 0.25 0.4 V SFH6186-5 VCEsat 0.25 0.4 CC 0.25 Thermal resistance OUTPUT Collector emitter leakage current Collector emitter capacitance Thermal resistance 200 nA COUPLER IC = 0.32 mA, IF = 1 mA IC = 0.5 mA, IF = 1 mA Collector emitter saturation voltage IC = 0.8 mA, IF = 1 mA IC = 1.25 mA, IF = 1 mA Coupling capacitance V pF Note • Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. CURRENT TRANSFER RATIO (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION IF = 1 mA, VCE = 0.5 V IF = 0.5 mA, VCE = 1.5 V IF = 1 mA, VCE = 0.5 V IF = 0.5 mA, VCE = 1.5 V IC/IF IF = 1 mA, VCE = 0.5 V IF = 0.5 mA, VCE = 1.5 V IF = 1 mA, VCE = 0.5 V IF = 0.5 mA, VCE = 1.5 V PART SYMBOL MIN. SFH618A-2 CTR 63 TYP. MAX. UNIT 125 % 125 % SFH6186-2 CTR 63 SFH618A-2 CTR 32 75 % SFH6186-2 CTR 32 75 % SFH618A-3 CTR 100 200 % SFH6186-3 CTR 100 200 % SFH618A-3 CTR 50 120 % SFH6186-3 CTR 50 120 % SFH618A-4 CTR 160 320 % 320 % SFH6186-4 CTR 160 SFH618A-4 CTR 80 200 % SFH6186-4 CTR 80 200 % SFH618A-5 CTR 250 500 % SFH6186-5 CTR 250 500 % SFH618A-5 CTR 125 300 % SFH6186-5 CTR 125 300 % SWITCHING CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER Turn on time Rise time Turn off time Fall time TEST CONDITION SYMBOL VCC = 5 V, IC = 2 mA, RL = 100 Ω VCC = 5 V, IC = 2 mA, RL = 100 Ω VCC = 5 V, IC = 2 mA, RL = 100 Ω VCC = 5 V, IC = 2 mA, RL = 100 Ω ton tr toff tf MIN. TYP. 6 3.5 5.5 5 MAX. UNIT μs μs μs μs Document Number: 83673 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Rev. 2.6, 31-Aug-15 SFH618A, SFH6186 www.vishay.com Vishay Semiconductors VCC = 5 V Input Input pulse RL 10 % VOUT Output pulse 90 % tr tf t off t on isfh618a_10 isfh618a_12 Fig. 2 - Test Circuit Fig. 3 - Test Circuit and Waveforms SAFETY AND INSULATION RATINGS PARAMETER TEST CONDITION SYMBOL Climatic classification According to IEC 68 part 1 Pollution degree According to DIN VDE 0109 Comparative tracking index VALUE UNIT 55/115/21 2 Insulation group IIIa CTI 175 According to UL1577, t = 1 min VISO 4470 VRMS Tested withstanding isolation voltage According to UL1577, t = 1 s VISO 5300 VRMS Maximum transient isolation voltage According to DIN EN 60747-5-5 VIOTM 8000 Vpeak Maximum repetitive peak isolation voltage According to DIN EN 60747-5-5 VIORM 890 Vpeak Tamb = 25 °C, VIO = 500 V RIO ≥ 1012 Ω Tamb = 100 °C, VIO = 500 V RIO ≥ 1011 Ω PSO 700 mW Input safety current ISI 400 mA Input safety temperature TS 175 °C ≥7 mm Maximum rated withstanding isolation voltage Isolation resistance Output safety power Creepage distance DIP-4 Clearance distance DIP-4 ≥7 mm Creepage distance DIP-4, 400 mil, option 6 ≥8 mm Clearance distance DIP-4, 400 mil, option 6 ≥8 mm Creepage distance SMD-4, option 7 and option 9 ≥7 mm Clearance distance SMD-4, option 7 and option 9 ≥7 mm ≥ 0.4 mm Insulation thickness DTI Note • As per DIN EN 60747-5-5, § 7.4.3.8.2, this optocoupler is suitable for “safe electrical insulation” only within the safety ratings. Compliance with the safety ratings shall be ensured by means of protective circuits. TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 280 240 200 CTR (%) CTR (%) 240 280 VCE = 0.5 V, CTR = f (TA) IF = 5mA 160 200 IF = 5mA 160 120 IF = 2mA 120 IF = 2mA 80 IF = 1mA 80 IF = 1mA 40 IF = 0.5mA 40 0 - 40 - 20 isfh618a_01 IF = 0.5mA 0 20 40 60 TA (°C) 80 Fig. 4 - Current Transfer Ratio (typ.) 100 0 - 40 - 20 isfh618a_02 0 20 40 60 TA (°C) 80 100 Fig. 5 - Current Transfer Ratio (typ.) Document Number: 83673 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Rev. 2.6, 31-Aug-15 SFH618A, SFH6186 www.vishay.com Vishay Semiconductors 1.2 1.1 1.05 8 6 1 4 IF = 2 mA 0.95 2 IF = 1 mA 0.9 10-1 100 0 10-2 101 IF (mA) isfh618a_03 100 101 VCE (V) 102 Fig. 9 - Output Characteristics 1.2 103 IF = 1.0 mA, VF = f (TA) 1.15 IF = 0.5 mA 10-1 isfh618a_06 Fig. 6 - Diode Forward Voltage (typ.) t off 1.1 t (µs) VF (V) IF = 5 mA TA = 25 ºC, CE = f (VCE, IF) 10 ICE (mA) VF (V) 1.15 12 TA = 25 ºC, VF = f (IF) 1.05 1 tF 102 t on tR 101 0.95 0 - 40 - 20 0 20 isfh618a_04 40 60 TA (°C) 80 100 100 102 isfh618a_09 Fig. 7 - Diode Forward Voltage (typ.) TA = 25 ºC, IF = 1.0 mA, VCC = 5.0 V, tON, tR, tOFF, tF, = f (RL) 103 104 RL (Ω) 105 Fig. 10 - Switching Times (typ.) 20 CCE (pF) 16 TA = 25 ºC, f = 1.0 MHz CEE = f (VCE) 12 8 4 0 10-2 isfh618a_05 10-1 100 101 VCE (V) 102 Fig. 8 - Transistor Capacitance Document Number: 83673 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Rev. 2.6, 31-Aug-15 SFH618A, SFH6186 www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters 2 1 Pin one ID 6.48 6.81 ISO method A 3 4 4.55 4.83 7.62 typ. 0.79 typ. 0.76 1.14 1.27 typ. 3.30 3.81 2.79 3.30 0.508 0.89 0.46 0.56 i178027 5.84 6.35 10° 4° typ. 0° to 15° 0.2 0.3 1.27 2.54 SMD 0.76 Pin one ID R 0.25 2.54 1.78 6.48 6.81 1.52 8 min. 11.05 3 4 9.52 10.03 4.55 4.83 0.76 1.14 7.52 7.90 0.79 typ. 10° 3.30 3.81 0.25 typ. ISO method A 8 min. 0.249 0.102 4° typ. 2.54 typ. Lead coplanarity 0.004 max. 1.27 typ. i178029 Option 6 Option 7 10.36 9.96 7.8 7.4 3° to 7° 0.508 1.020 Option 9 or SFH6186 9.53 10.03 7.62 ref. 7.62 typ. 4.6 4.1 0.102 0.249 0.30 typ. 0.7 8 min. 10.16 10.92 0.51 1.02 8.4 min. 10.3 max. 0.35 0.25 15° max. 0.76 2.54 R0.25 0.76 2.54 R0.25 1.78 18450-11 8 min. 11.05 1.52 1.78 8 min. 11.05 1.52 PACKAGE MARKING (example) YWW 68 SFH618A-3 V Document Number: 83673 6 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Rev. 2.6, 31-Aug-15 SFH618A, SFH6186 www.vishay.com Vishay Semiconductors SOLDER PROFILES HANDLING AND STORAGE CONDITIONS ESD level: HBM class 2 300 5s Lead temperature Temperature (°C) 250 235 °C to 260 °C first wave 200 wave ca. 200 K/s 150 100 °C to 130 °C 100 Conditions: Tamb < 30 °C, RH < 85 % Moisture sensitivity level 1, according to J-STD-020 ca. 2 K/s 2 K/s 50 full line: typical dotted line: process limits second wave Floor life: unlimited ca. 5 K/s forced cooling 0 0 50 100 94 8626 150 200 250 Time (s) Fig. 11 - Wave Soldering Double Wave Profile According to J-STD-020 for DIP-8 Devices 300 Temperature (°C) max. 260 °C 245 °C 255 °C 240 °C 217 °C 250 200 max. 30 s 150 max. 100 s max. 120 s 100 max. ramp down 6 °C/s 50 max. ramp up 3 °C/s 0 0 19841 50 100 150 200 250 300 Time (s) Fig. 12 - Lead (Pb)-free Reflow Solder Profile According to J-STD-020 for SMD-8 Devices Document Number: 83673 7 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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