SFH618A, SFH6186 Datasheet

SFH618A, SFH6186
www.vishay.com
Vishay Semiconductors
Optocoupler, Phototransistor Output, Low Input Current
FEATURES
A 1
4 C
C 2
3 E
•
•
•
•
•
•
•
•
1
Good CTR linearity depending on forward current
Low CTR degradation
High collector emitter voltage, VCEO = 55 V
Isolation test voltage, 5300 VRMS
Low coupling capacitance
End stackable, 0.100" (2.54 mm) spacing
High common mode transient immunity
Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
•
•
•
•
1
i179061-1
DESCRIPTION
The SFH618A (DIP) and SFH6186 (SMD) feature a high
current transfer ratio, low coupling capacitance and high
isolation voltage. These couplers have a GaAs infrared
diode emitter, which is optically coupled to silicon planar
phototransistor detector, and is incorporated in a plastic
DIP-4 or SMD package.
The coupling devices are designed for signal transmission
between two electrically separated circuits.The couplers are
end-stackable with 2.54 mm lead spacing. Creepage and
clearance distances of > 8 mm achieved with option 6.
Telecom
Industrial controls
Battery powered equipment
Office machines
AGENCY APPROVALS
The safety application model number covering all products
in this datasheet is SFH618A. This model number should be
used when consulting safety agency documents.
• UL1577, file no. E52744 system code H or J, double
protection
• CSA 93751
• DIN EN 60747-5-5 (VDE 0884-5) available with option 1
• BSI IEC 60950; IEC 60065
• FIMKO
ORDERING INFORMATION
S
F
H
6
1
8
#
PART NUMBER
-
#
CTR
BIN
X
0
#
PACKAGE OPTION
#
DIP-#
Option 6
7.62 mm
10.16 mm
Option 7
Option 9
T
TAPE
AND
REEL
> 0.7 mm
AGENCY
CERTIFIED/PACKAGE
UL, CUL
DIP-4
DIP-4, 400 mil, option 6
SMD-4, option 7
SMD-4, option 9
VDE, UL, CUL
> 0.1 mm
CTR (%)
1 mA
63 to 125
SFH618A-2
SFH6186-2T (1)
63 to 125
100 to 200
SFH618A-3
SFH618A-3X006
SFH6186-3T (1), SFH6186-3T1 (2),
SFH6186-3X002T (1)
100 to 200
DIP-4
SFH618A-3X001
DIP-4, 400 mil, option 6
SFH618A-3X016
SMD-4, option 7
SFH618A-3X017T (1)
SMD-4, option 9
SFH6186-3X001T (1)
Notes
• Additional options may be possible, please contact sales office
(1) Also available in tubes, do not put T to the end
(2) Product is rotated 90° in tape and reel cavity
160 to 320
SFH618A-4
SFH6186-4T (1)
250 to 500
SFH618A-5
SFH618A-5X007T (1)
SFH6186-5T (1),
SFH6186-5T1 (2)
160 to 320
250 to 500
SFH618A-4X001
SFH618A-4X016
SFH6186-4X001T
SFH618A-5X016
SFH618A-5X017T (1)
SFH6186-5X001T (1)
Document Number: 83673
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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Rev. 2.6, 31-Aug-15
SFH618A, SFH6186
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ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
INPUT
Reverse voltage
VR
6
V
Pdiss
70
mW
IF
60
mA
Collector emitter voltage
VCEO
55
V
Emitter collector voltage
VECO
7
V
Power dissipation
Forward current
OUTPUT
IC
50
mA
IC
100
mA
Pdiss
150
mW
Storage temperature range
Tstg
-55 to +150
°C
Ambient temperature range
Tamb
-55 to +100
°C
Tj
125
°C
Tsld
260
°C
Collector current
tp ≤ 1 ms
Power dissipation
COUPLER
Junction temperature
max. 10 s, dip soldering distance
to seating plane ≥ 1.5 mm
Soldering temperature (1)
Notes
• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
(1) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through
hole devices (DIP).
Ptot - Power Dissipation (mW)
200
150
Detector
100
LED
50
0
0
20
40
60
80
100
120
Tamb - Ambient Temperature (°C)
Fig. 1 - Permissible Power Dissipation vs. Ambient Temperature
Document Number: 83673
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Rev. 2.6, 31-Aug-15
SFH618A, SFH6186
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ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT
INPUT
Forward voltage
IF = 5 mA
VF
1.1
1.5
V
Reverse current
VR = 6 V
IR
0.01
10
μA
Capacitance
VR = 0 V, f = 1 MHz
CO
25
pF
Rthja
1070
K/W
VCE = 10 V
ICEO
10
VCE = 5 V, f = 1 MHz
CCE
7
pF
Rthja
500
K/W
SFH618A-2
VCEsat
0.25
0.4
V
SFH6186-2
VCEsat
0.25
0.4
V
SFH618A-3
VCEsat
0.25
0.4
V
SFH6186-3
VCEsat
0.25
0.4
V
SFH618A-4
VCEsat
0.25
0.4
V
SFH6186-4
VCEsat
0.25
0.4
V
SFH618A-5
VCEsat
0.25
0.4
V
SFH6186-5
VCEsat
0.25
0.4
CC
0.25
Thermal resistance
OUTPUT
Collector emitter leakage current
Collector emitter capacitance
Thermal resistance
200
nA
COUPLER
IC = 0.32 mA, IF = 1 mA
IC = 0.5 mA, IF = 1 mA
Collector emitter saturation voltage
IC = 0.8 mA, IF = 1 mA
IC = 1.25 mA, IF = 1 mA
Coupling capacitance
V
pF
Note
• Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
CURRENT TRANSFER RATIO (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
IF = 1 mA, VCE = 0.5 V
IF = 0.5 mA, VCE = 1.5 V
IF = 1 mA, VCE = 0.5 V
IF = 0.5 mA, VCE = 1.5 V
IC/IF
IF = 1 mA, VCE = 0.5 V
IF = 0.5 mA, VCE = 1.5 V
IF = 1 mA, VCE = 0.5 V
IF = 0.5 mA, VCE = 1.5 V
PART
SYMBOL
MIN.
SFH618A-2
CTR
63
TYP.
MAX.
UNIT
125
%
125
%
SFH6186-2
CTR
63
SFH618A-2
CTR
32
75
%
SFH6186-2
CTR
32
75
%
SFH618A-3
CTR
100
200
%
SFH6186-3
CTR
100
200
%
SFH618A-3
CTR
50
120
%
SFH6186-3
CTR
50
120
%
SFH618A-4
CTR
160
320
%
320
%
SFH6186-4
CTR
160
SFH618A-4
CTR
80
200
%
SFH6186-4
CTR
80
200
%
SFH618A-5
CTR
250
500
%
SFH6186-5
CTR
250
500
%
SFH618A-5
CTR
125
300
%
SFH6186-5
CTR
125
300
%
SWITCHING CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
Turn on time
Rise time
Turn off time
Fall time
TEST CONDITION
SYMBOL
VCC = 5 V, IC = 2 mA, RL = 100 Ω
VCC = 5 V, IC = 2 mA, RL = 100 Ω
VCC = 5 V, IC = 2 mA, RL = 100 Ω
VCC = 5 V, IC = 2 mA, RL = 100 Ω
ton
tr
toff
tf
MIN.
TYP.
6
3.5
5.5
5
MAX.
UNIT
μs
μs
μs
μs
Document Number: 83673
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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Rev. 2.6, 31-Aug-15
SFH618A, SFH6186
www.vishay.com
Vishay Semiconductors
VCC = 5 V
Input
Input pulse
RL
10 %
VOUT
Output pulse
90 %
tr
tf
t off
t on
isfh618a_10
isfh618a_12
Fig. 2 - Test Circuit
Fig. 3 - Test Circuit and Waveforms
SAFETY AND INSULATION RATINGS
PARAMETER
TEST CONDITION
SYMBOL
Climatic classification
According to IEC 68 part 1
Pollution degree
According to DIN VDE 0109
Comparative tracking index
VALUE
UNIT
55/115/21
2
Insulation group IIIa
CTI
175
According to UL1577, t = 1 min
VISO
4470
VRMS
Tested withstanding isolation voltage
According to UL1577, t = 1 s
VISO
5300
VRMS
Maximum transient isolation voltage
According to DIN EN 60747-5-5
VIOTM
8000
Vpeak
Maximum repetitive peak isolation voltage
According to DIN EN 60747-5-5
VIORM
890
Vpeak
Tamb = 25 °C, VIO = 500 V
RIO
≥ 1012
Ω
Tamb = 100 °C, VIO = 500 V
RIO
≥ 1011
Ω
PSO
700
mW
Input safety current
ISI
400
mA
Input safety temperature
TS
175
°C
≥7
mm
Maximum rated withstanding isolation voltage
Isolation resistance
Output safety power
Creepage distance
DIP-4
Clearance distance
DIP-4
≥7
mm
Creepage distance
DIP-4, 400 mil, option 6
≥8
mm
Clearance distance
DIP-4, 400 mil, option 6
≥8
mm
Creepage distance
SMD-4, option 7 and option 9
≥7
mm
Clearance distance
SMD-4, option 7 and option 9
≥7
mm
≥ 0.4
mm
Insulation thickness
DTI
Note
• As per DIN EN 60747-5-5, § 7.4.3.8.2, this optocoupler is suitable for “safe electrical insulation” only within the safety ratings. Compliance
with the safety ratings shall be ensured by means of protective circuits.
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
280
240
200
CTR (%)
CTR (%)
240
280
VCE = 0.5 V, CTR = f (TA)
IF = 5mA
160
200
IF = 5mA
160
120
IF = 2mA
120
IF = 2mA
80
IF = 1mA
80
IF = 1mA
40
IF = 0.5mA
40
0
- 40 - 20
isfh618a_01
IF = 0.5mA
0
20
40
60
TA (°C)
80
Fig. 4 - Current Transfer Ratio (typ.)
100
0
- 40 - 20
isfh618a_02
0
20
40
60
TA (°C)
80
100
Fig. 5 - Current Transfer Ratio (typ.)
Document Number: 83673
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Rev. 2.6, 31-Aug-15
SFH618A, SFH6186
www.vishay.com
Vishay Semiconductors
1.2
1.1
1.05
8
6
1
4
IF = 2 mA
0.95
2
IF = 1 mA
0.9
10-1
100
0
10-2
101
IF (mA)
isfh618a_03
100
101
VCE (V)
102
Fig. 9 - Output Characteristics
1.2
103
IF = 1.0 mA, VF = f (TA)
1.15
IF = 0.5 mA
10-1
isfh618a_06
Fig. 6 - Diode Forward Voltage (typ.)
t off
1.1
t (µs)
VF (V)
IF = 5 mA
TA = 25 ºC,
CE = f
(VCE, IF)
10
ICE (mA)
VF (V)
1.15
12
TA = 25 ºC, VF = f (IF)
1.05
1
tF
102
t on
tR
101
0.95
0
- 40 - 20
0
20
isfh618a_04
40
60
TA (°C)
80
100
100
102
isfh618a_09
Fig. 7 - Diode Forward Voltage (typ.)
TA = 25 ºC, IF = 1.0 mA,
VCC = 5.0 V, tON, tR,
tOFF, tF, = f (RL)
103
104
RL (Ω)
105
Fig. 10 - Switching Times (typ.)
20
CCE (pF)
16
TA = 25 ºC, f = 1.0 MHz
CEE = f (VCE)
12
8
4
0
10-2
isfh618a_05
10-1
100
101
VCE (V)
102
Fig. 8 - Transistor Capacitance
Document Number: 83673
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Rev. 2.6, 31-Aug-15
SFH618A, SFH6186
www.vishay.com
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters
2
1
Pin one ID
6.48
6.81
ISO method A
3
4
4.55
4.83
7.62 typ.
0.79 typ.
0.76
1.14
1.27 typ.
3.30
3.81
2.79
3.30
0.508
0.89
0.46
0.56
i178027
5.84
6.35
10°
4°
typ.
0° to 15°
0.2
0.3
1.27
2.54
SMD
0.76
Pin one ID
R 0.25
2.54
1.78
6.48
6.81
1.52
8 min.
11.05
3
4
9.52
10.03
4.55
4.83
0.76
1.14
7.52
7.90
0.79 typ.
10°
3.30
3.81
0.25 typ.
ISO method A
8 min.
0.249
0.102
4° typ.
2.54 typ.
Lead
coplanarity
0.004 max.
1.27 typ.
i178029
Option 6
Option 7
10.36
9.96
7.8
7.4
3° to 7°
0.508
1.020
Option 9 or SFH6186
9.53
10.03
7.62 ref.
7.62 typ.
4.6
4.1
0.102
0.249
0.30 typ.
0.7
8 min.
10.16
10.92
0.51
1.02
8.4 min.
10.3 max.
0.35
0.25
15° max.
0.76
2.54
R0.25
0.76
2.54
R0.25
1.78
18450-11
8 min.
11.05
1.52
1.78
8 min.
11.05
1.52
PACKAGE MARKING (example)
YWW 68
SFH618A-3
V
Document Number: 83673
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Rev. 2.6, 31-Aug-15
SFH618A, SFH6186
www.vishay.com
Vishay Semiconductors
SOLDER PROFILES
HANDLING AND STORAGE CONDITIONS
ESD level: HBM class 2
300
5s
Lead temperature
Temperature (°C)
250
235 °C to
260 °C
first wave
200
wave
ca. 200 K/s
150
100 °C to
130 °C
100
Conditions: Tamb < 30 °C, RH < 85 %
Moisture sensitivity level 1, according to J-STD-020
ca. 2 K/s
2 K/s
50
full line: typical
dotted line:
process limits
second
wave
Floor life: unlimited
ca. 5 K/s
forced cooling
0
0
50
100
94 8626
150
200
250
Time (s)
Fig. 11 - Wave Soldering Double Wave Profile According to
J-STD-020 for DIP-8 Devices
300
Temperature (°C)
max. 260 °C
245 °C
255 °C
240 °C
217 °C
250
200
max. 30 s
150
max. 100 s
max. 120 s
100
max. ramp down 6 °C/s
50
max. ramp up 3 °C/s
0
0
19841
50
100
150
200
250
300
Time (s)
Fig. 12 - Lead (Pb)-free Reflow Solder Profile According to
J-STD-020 for SMD-8 Devices
Document Number: 83673
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Rev. 2.6, 31-Aug-15
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Revision: 02-Oct-12
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Document Number: 91000