VEMT4700F Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: surface mount • Package form: PLCC-3 • Dimensions (L x W x H in mm): 3.5 x 2.8 x 1.75 • High radiant sensitivity • Fast response times • Daylight blocking filter matched with 870 nm to 950 nm emitters • Angle of half sensitivity: ϕ = ± 60° • Base terminal connected 21675 • Package notch indicates collector • Package matched with IR emitter series VSML3710 DESCRIPTION • Floor life: 168 h, MSL 3, acc. J-STD-020 VEMT4700F is a high speed silicon NPN epitaxial planar phototransistor in a miniature PLCC-3 package. The integrated daylight blocking filter is matched to 950 nm IR emitters. • Lead (Pb)-free reflow soldering • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC APPLICATIONS • Photo interrupters • Miniature switches • Counters • Encoders • Position sensors PRODUCT SUMMARY COMPONENT VEMT4700F Ica (mA) ϕ (deg) λ0.5 (nm) 0.5 ± 60 870 to 1050 Note • Test conditions see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM VEMT4700F-GS08 Tape and reel MOQ: 7500 pcs, 1500 pcs/reel PLCC-3 VEMT4700F-GS18 Tape and reel MOQ: 8000 pcs, 8000 pcs/reel PLCC-3 Note • MOQ: minimum order quantity ** Please see document “Vishay Material Category Policy”: www.vishay.com/doc?99902 Document Number: 81120 Rev. 1.1, 14-Jul-10 For technical questions, contact: [email protected] www.vishay.com 1 VEMT4700F Vishay Semiconductors Silicon NPN Phototransistor ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) SYMBOL VALUE UNIT Collector emitter voltage PARAMETER TEST CONDITION VCEO 70 V Emitter collector voltage VECO 5 V IC 50 mA ICM 100 mA PV 100 mW Collector current tp/T ≤ 0.1, tp ≤ 10 μs Collector peak current Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Acc. reflow solder profile fig. 10 Thermal resistance junction/ambient Soldered on PCB with pad dimensions: 4 mm x 4 mm Tj 100 °C Tamb - 40 to + 100 °C Tstg - 40 to + 100 °C Tsd 260 °C RthJA 400 K/W PV - Power Dissipation Limit (mW) 125 R thJA = 400 K/W 100 75 50 25 0 0 10 20 30 40 50 60 70 80 90 100 20376 Tamb - Ambient Temperature (°C) Fig. 1 - Power Dissipation Limit vs. Ambient Temperature BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER Collector emitter breakdown voltage Collector emitter dark current Collector emitter capacitance Collector light current TEST CONDITION SYMBOL MIN. 70 TYP. MAX. UNIT 200 nA IC = 1 mA V(BR)CEO VCE = 20 V, E = 0 ICEO 1 V VCE = 5 V, f = 1 MHz, E = 0 CCEO 3 pF Ee = 1 mW/cm2, λ = 950 nm, VCE = 5 V Ica 0.5 mA 0.25 Angle of half sensitivity ϕ ± 60 deg Wavelength of peak sensitivity λp 940 nm nm λ0.5 870 to 1050 Ee = 1 mW/cm2, λ = 950 nm, IC = 0.1 mA VCEsat 0.15 VS = 5 V, IC = 1 mA, λ = 950 nm, RL = 1 kΩ tr/tf 6 μs VS = 5 V, IC = 1 mA, λ = 950 nm, RL = 100 Ω tr/tf 2 μs VS = 5 V, IC = 2 mA, RL = 100 Ω fc 180 kHz Range of spectral bandwidth Collector emitter saturation voltage Rise time, fall time Cut-off frequency www.vishay.com 2 For technical questions, contact: [email protected] 0.3 V Document Number: 81120 Rev. 1.1, 14-Jul-10 VEMT4700F Silicon NPN Phototransistor Vishay Semiconductors BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) Ica - Collector Light Current (mA) 10 103 VCE = 20 V 102 101 20 40 60 80 Ee = 1 mW/cm2 0.5 mW/cm2 0.2 mW/cm2 2.0 1.8 VCE = 5 V Ee = 1 mW/cm2 λ = 950 nm 1.6 1.4 1.2 1.0 0.8 0.6 0 20 40 60 80 100 Tamb - Ambient Temperature (°C) 94 8239 0.1 10 f = 1 MHz 8 6 4 2 0 0.1 1 100 10 VCE - Collector Emitter Voltage (V) Fig. 6 - Collector Emitter Capacitance vs. Collector Emitter Voltage 8 ton/toff - Turn-on/Turn-off Time (µs) 10 1 0.1 VCE = 5 V λ = 950 nm 0.01 0.001 0.01 94 8316 100 10 Fig. 5 - Collector Light Current vs. Collector Emitter Voltage 94 8294 Fig. 3 - Relative Collector Current vs. Ambient Temperature 1 VCE - Collector Emitter Voltage (V) 94 8317 Fig. 2 - Collector Dark Current vs. Ambient Temperature Ica rel - Relative Collector Current 1 100 Tamb - Ambient Temperature (°C) 94 8304 Ica - Collector Light Current (mA) λ = 950 nm 0.1 10 CCEO - Collector Emitter Capacitance (pF) ICEO - Collector Dark Current (nA) 104 VCE = 5 V RL = 100 Ω λ = 950 nm 6 4 toff 2 ton 0 0.1 1 Ee - Irradiance (mW/cm²) Fig. 4 - Collector Light Current vs. Irradiance Document Number: 81120 Rev. 1.1, 14-Jul-10 0 10 94 8293 2 4 6 8 10 12 14 IC - Collector Current (mA) Fig. 7 - Turn-on/Turn-off Time vs. Collector Current For technical questions, contact: [email protected] www.vishay.com 3 VEMT4700F Silicon NPN Phototransistor 0° 1.2 10° 20° 1.0 0.8 0.6 0.4 0.2 40° 1.0 0.9 50° 0.8 60° 70° 0.7 ϕ - Angular Displacement 30° Srel - Relative Sensitivity S (λ)rel - Relative Spectral Sensitivity Vishay Semiconductors 80° 0 750 850 1050 950 0.6 1150 0.4 0.2 0 94 8318 λ - Wavelength (nm) 94 8408 Fig. 8 - Relative Spectral Sensitivity vs. Wavelength Fig. 9 - Relative Radiant Sensitivity vs. Angular Displacement PACKAGE DIMENSIONS in millimeters Mounting Pad Layout area covered with solder resist 4 0.5 2.6 (2.8) 1.2 4 1.6 (1.9) Dimensions: IR and vaporphase (wave soldering) 21439 SOLDER PROFILE DRYPACK 300 255 °C 240 °C 217 °C 250 Temperature (°C) max. 260 °C 245 °C 200 FLOOR LIFE max. 30 s 150 max. 100 s max. 120 s 100 max. ramp up 3 °C/s max. ramp down 6 °C/s 50 Devices are packed in moisture barrier bags (MBB) to prevent the products from moisture absorption during transportation and storage. Each bag contains a desiccant. Floor life (time between soldering and removing from MBB) must not exceed the time indicated on MBB label: Floor life: 168 h Conditions: Tamb < 30 °C, RH < 60 % Moisture sensitivity level 3, acc. to J-STD-020. 0 0 50 100 150 200 250 300 Fig. 10 - Lead (Pb)-free Reflow Solder Profile acc. J-STD-020 www.vishay.com 4 DRYING In case of moisture absorption devices should be baked before soldering. Conditions see J-STD-020 or label. Devices taped on reel dry using recommended conditions 192 h at 40 °C (+ 5 °C), RH < 5 %. For technical questions, contact: [email protected] Document Number: 81120 Rev. 1.1, 14-Jul-10 VEMT4700F Silicon NPN Phototransistor TAPE AND REEL PLCC-2 components are packed in antistatic blister tape (DIN IEC (CO) 564) for automatic component insertion. Cavities of blister tape are covered with adhesive tape. Vishay Semiconductors component is followed by a carrier tape trailer with a least 75 empty compartments and sealed with cover tape. 10.0 9.0 120° 4.5 3.5 Adhesive tape 2.5 1.5 Blister tape Component cavity 94 8670 Identification Label: Vishay type group tape code production code quantity Fig. 11 - Blister Tape 3.5 3.1 13.00 12.75 63.5 60.5 14.4 max. 180 178 94 8665 Fig. 14 - Dimensions of Reel-GS08 10.4 8.4 2.2 2.0 120° 5.75 5.25 3.6 3.4 4.5 3.5 4.0 3.6 2.5 1.5 8.3 7.7 1.85 1.65 1.6 1.4 4.1 3.9 4.1 3.9 0.25 2.05 1.95 94 8668 Fig. 12 - Tape Dimensions in mm for PLCC-2 Identification Label: Vishay type group tape code production code quantity 13.00 12.75 62.5 60.0 321 329 14.4 max. 18857 MISSING DEVICES A maximum of 0.5 % of the total number of components per reel may be missing, exclusively missing components at the beginning and at the end of the reel. A maximum of three consecutive components may be missing, provided this gap is followed by six consecutive components. De-reeling direction Fig. 15 - Dimensions of Reel-GS18 COVER TAPE REMOVAL FORCE The removal force lies between 0.1 N and 1.0 N at a removal speed of 5 mm/s. In order to prevent components from popping out of the blisters, the cover tape must be pulled off at an angle of 180° with regard to the feed direction. 94 8158 > 160 mm Tape leader 40 empty compartments min. 75 empty compartments Carrier leader Carrier trailer Fig. 13 - Beginning and End of Reel The tape leader is at least 160 mm and is followed by a carrier tape leader with at least 40 empty compartments. The tape leader may include the carrier tape as long as the cover tape is not connected to the carrier tape. The least Document Number: 81120 Rev. 1.1, 14-Jul-10 For technical questions, contact: [email protected] www.vishay.com 5 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000