VEMT3700 Vishay Semiconductors Silicon NPN Phototransistor FEATURES • • • • • • • • • • • • • 94 8553 DESCRIPTION VEMT3700 is a high speed silicon NPN epitaxial planar phototransistor in a miniature PLCC-2 package for surface mounting on printed boards. The device is sensitive to visible and near infrared radiation. Package type: surface mount Package form: PLCC-2 Dimensions (L x W x H in mm): 3.5 x 2.8 x 1.75 High photo sensitivity High radiant sensitivity Suitable for visible and near infrared radiation Fast response times Angle of half sensitivity: ϕ = ± 60° Package notch indicates collector Package matched with IR emitter series VSML3710 Floor life: 168 h, MSL 3, acc. J-STD-020 Lead (Pb)-free reflow soldering Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC APPLICATIONS • • • • • • Photo interrupters Miniature switches Counters Encoders Position sensors Ligth sensors PRODUCT SUMMARY COMPONENT VEMT3700 Ica (mA) ϕ (deg) λ0.1 (nm) 0.5 ± 60 450 to 1080 Note • Test conditions see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM VEMT3700-GS08 VEMT3700-GS18 Tape and reel Tape and reel MOQ: 7500 pcs, 1500 pcs/reel MOQ: 8000 pcs, 8000 pcs/reel PLCC-2 PLCC-2 Note • MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION Collector emitter voltage Emitter collector voltage Collector current Collector peak current Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ambient tp/T ≤ 0.1, tp ≤ 10 μs Acc. reflow solder profile fig. 10 Soldered on PCB with pad dimensions: 4 mm x 4 mm SYMBOL VALUE UNIT VCEO VECO IC ICM PV Tj Tamb Tstg Tsd RthJA 70 5 50 100 100 100 - 40 to + 100 - 40 to + 100 260 400 V V mA mA mW °C °C °C °C K/W ** Please see document “Vishay Material Category Policy”: www.vishay.com/doc?99902 Document Number: 81478 Rev. 1.6, 14-Jul-10 For technical questions, contact: [email protected] www.vishay.com 1 VEMT3700 Silicon NPN Phototransistor Vishay Semiconductors PV - Power Dissipation Limit (mW) 125 R thJA = 400 K/W 100 75 50 25 0 10 20 30 40 50 60 70 80 90 100 0 Tamb - Ambient Temperature (°C) 20376 Fig. 1 - Power Dissipation Limit vs. Ambient Temperature BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. IC = 1 mA V(BR)CEO 70 TYP. MAX. UNIT VCE = 20 V, E = 0 ICEO 1 200 nA VCE = 5 V, f = 1 MHz, E = 0 CCEO 3 pF Ee = 1 mW/cm2, λ = 950 nm, VCE = 5 V Ica 0.5 mA Collector emitter breakdown voltage Collector emitter dark current Collector emitter capacitance Collector light current V 0.25 Angle of half sensitivity ϕ ± 60 deg Wavelength of peak sensitivity λp 850 nm λ0.1 450 to 1080 nm Ee = 1 mW/cm2, λ = 950 nm, IC = 0.1 mA VCEsat 0.15 VS = 5 V, IC = 1 mA, λ = 950 nm, RL = 1 kΩ tr/tf 6 μs VS = 5 V, IC = 1 mA, λ = 950 nm, RL = 100 Ω tr/tf 2 μs VS = 5 V, IC = 2 mA, RL = 100 Ω fc 180 kHz Range of spectral bandwidth Collector emitter saturation voltage Rise time, fall time Cut-off frequency 0.3 V BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 2.0 Ica rel - Relative Collector Current ICEO - Collector Dark Current (nA) 104 103 VCE = 20 V 102 101 10 1.8 VCE = 5 V Ee = 1 mW/cm2 λ = 950 nm 1.6 1.4 1.2 1.0 0.8 0.6 20 94 8304 40 60 80 Tamb - Ambient Temperature (°C) Fig. 2 - Collector Dark Current vs. Ambient Temperature www.vishay.com 2 0 100 94 8239 20 40 60 80 100 Tamb - Ambient Temperature (°C) Fig. 3 - Relative Collector Current vs. Ambient Temperature For technical questions, contact: [email protected] Document Number: 81478 Rev. 1.6, 14-Jul-10 VEMT3700 Silicon NPN Phototransistor 8 ton/toff - Turn-on/Turn-off Time (µs) Ica - Collector Light Current (mA) 10 Vishay Semiconductors 1 0.1 VCE = 5 V λ = 950 nm 0.01 0.001 0.01 4 toff 2 ton 0 0.1 1 10 Ee - Irradiance (mW/cm²) 94 8316 VCE = 5 V RL = 100 Ω λ = 950 nm 6 0 2 6 8 10 12 14 IC - Collector Current (mA) 94 8293 Fig. 4 - Collector Light Current vs. Irradiance 4 Fig. 7 - Turn-on/Turn-off Time vs. Collector Current S (λ)rel - Relative Spectral Sensitivity Ica - Collector Light Current (mA) 10 λ = 950 nm 1 Ee = 1 mW/cm2 0.5 mW/cm2 0.2 mW/cm2 0.1 0.1 94 8317 1 10 0.8 0.6 0.4 0.2 0 100 VCE - Collector Emitter Voltage (V) 400 600 800 1000 λ - Wavelength (nm) 94 8348 Fig. 5 - Collector Light Current vs. Collector Emitter Voltage Fig. 8 - Relative Spectral Sensitivity vs. Wavelength 0° 10 10° 20° 30° 8 6 4 2 40° 1.0 0.9 50° 0.8 60° 70° 0.7 ϕ - Angular Displacement f = 1 MHz Srel - Relative Sensitivity CCEO - Collector Emitter Capacitance (pF) 1.0 80° 0 0.1 94 8294 1 10 100 VCE - Collector Emitter Voltage (V) Fig. 6 - Collector Emitter Capacitance vs. Collector Emitter Voltage Document Number: 81478 Rev. 1.6, 14-Jul-10 0.6 0.4 0.2 0 94 8318 Fig. 9 - Relative Radiant Sensitivity vs. Angular Displacement For technical questions, contact: [email protected] www.vishay.com 3 VEMT3700 Silicon NPN Phototransistor Vishay Semiconductors PACKAGE DIMENSIONS in millimeters Mounting Pad Layout 1.2 4 2.6 (2.8) area covered with solder resist 4 1.6 (1.9) 20873 SOLDER PROFILE DRYPACK 300 255 °C 240 °C 217 °C 250 Temperature (°C) max. 260 °C 245 °C FLOOR LIFE 200 max. 30 s 150 max. 100 s max. 120 s 100 max. ramp up 3 °C/s max. ramp down 6 °C/s 50 0 50 100 150 200 250 300 Time (s) Fig. 10 - Lead (Pb)-free Reflow Solder Profile acc. J-STD-020 www.vishay.com 4 Floor life (time between soldering and removing from MBB) must not exceed the time indicated on MBB label: Floor life: 168 h Conditions: Tamb < 30 °C, RH < 60 % Moisture sensitivity level 3, acc. to J-STD-020. DRYING 0 19841 Devices are packed in moisture barrier bags (MBB) to prevent the products from moisture absorption during transportation and storage. Each bag contains a desiccant. In case of moisture absorption devices should be baked before soldering. Conditions see J-STD-020 or label. Devices taped on reel dry using recommended conditions 192 h at 40 °C (+ 5 °C), RH < 5 %. For technical questions, contact: [email protected] Document Number: 81478 Rev. 1.6, 14-Jul-10 VEMT3700 Silicon NPN Phototransistor Vishay Semiconductors TAPE AND REEL PLCC-2 components are packed in antistatic blister tape (DIN IEC (CO) 564) for automatic component insertion. Cavities of blister tape are covered with adhesive tape. component is followed by a carrier tape trailer with a least 75 empty compartments and sealed with cover tape. 10.0 9.0 120° Adhesive tape 4.5 3.5 2.5 1.5 Blister tape Component cavity Identification Label: Vishay type group tape code production code quantity 94 8670 Fig. 11 - Blister Tape 13.00 12.75 63.5 60.5 14.4 max. 180 178 94 8665 Fig. 14 - Dimensions of Reel-GS08 3.5 3.1 2.2 2.0 3.6 3.4 4.0 3.6 4.5 3.5 8.3 7.7 2.5 1.5 1.85 1.65 1.6 1.4 4.1 3.9 4.1 3.9 10.4 8.4 120° 5.75 5.25 0.25 Identification Label: Vishay type group tape code production code quantity 2.05 1.95 94 8668 Fig. 12 - Tape Dimensions in mm for PLCC-2 MISSING DEVICES A maximum of 0.5 % of the total number of components per reel may be missing, exclusively missing components at the beginning and at the end of the reel. A maximum of three consecutive components may be missing, provided this gap is followed by six consecutive components. De-reeling direction 94 8158 13.00 12.75 62.5 60.0 321 329 14.4 max. 18857 Fig. 15 - Dimensions of Reel-GS18 COVER TAPE REMOVAL FORCE The removal force lies between 0.1 N and 1.0 N at a removal speed of 5 mm/s. In order to prevent components from popping out of the blisters, the cover tape must be pulled off at an angle of 180° with regard to the feed direction. > 160 mm Tape leader 40 empty compartments min. 75 empty compartments Carrier leader Carrier trailer Fig. 13 - Beginning and End of Reel The tape leader is at least 160 mm and is followed by a carrier tape leader with at least 40 empty compartments. The tape leader may include the carrier tape as long as the cover tape is not connected to the carrier tape. The least Document Number: 81478 Rev. 1.6, 14-Jul-10 For technical questions, contact: [email protected] www.vishay.com 5 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000