VEMT4700 Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant FEATURES • Package type: surface mount • Package form: PLCC-3 • Dimensions (L x W x H in mm): 3.5 x 2.8 x 1.75 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation • Fast response times • Angle of half sensitivity: ϕ = ± 60° 94 8554 • Base terminal connected • Package notch indicates collector • Package matched with IR emitter series VSML3710 DESCRIPTION • Floor life: 4 weeks, MSL 2a, acc. J-STD-020 VEMT4700 is a high speed silicon NPN epitaxial planar phototransistor in a miniature PLCC-3 package for surface mounting on printed boards. The device is sensitive to visible and near infrared radiation. • Lead (Pb)-free reflow soldering • Lead (Pb)-free component in accordance RoHS 2002/95/EC and WEEE 2002/96/EC with APPLICATIONS • Photo interrupters • Miniature switches • Counters • Encoders • Position sensors • Light sensors PRODUCT SUMMARY COMPONENT Ica (mA) ϕ (deg) λ0.1 (nm) 0.5 ± 60 450 to 1080 VEMT4700 Note Test conditions see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM VEMT4700-GS08 Tape and reel MOQ: 7500 pcs, 1500 pcs/reel PLCC-3 VEMT4700-GS18 Tape and reel MOQ: 8000 pcs, 8000 pcs/reel PLCC-3 Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS SYMBOL VALUE Collector emitter voltage PARAMETER TEST CONDITION VCEO 70 V Emitter collector voltage VECO 5 V Collector current Collector peak current Power dissipation Document Number: 81501 Rev. 1.3, 04-Sep-08 tp/T ≤ 0.1, tp ≤ 10 µs UNIT IC 50 mA ICM 100 mA PV 100 mW For technical questions, contact: [email protected] www.vishay.com 531 VEMT4700 Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION SYMBOL Junction temperature Operating temperature range Storage temperature range UNIT Tj 100 °C Tamb - 40 to + 100 °C °C Tstg - 40 to + 100 Acc. reflow solder profile fig. 10 Tsd 260 °C Soldered on PCB with pad dimensions: 4 mm x 4 mm RthJA 400 K/W Soldering temperature Thermal resistance junction/ambient VALUE Note Tamb = 25 °C, unless otherwise specified PV - Power Dissipation Limit (mW) 125 R thJA = 400 K/W 100 75 50 25 0 0 10 20 30 40 50 60 70 80 90 100 20376 Tamb - Ambient Temperature (°C) Fig. 1 - Power Dissipation Limit vs. Ambient Temperature BASIC CHARACTERISTICS PARAMETER TEST CONDITION SYMBOL MIN. IC = 1 mA V(BR)CEO 70 VCE = 20 V, E = 0 ICEO VCE = 5 V, f = 1 MHz, E = 0 CCEO Ee = 1 mW/cm2, λ = 950 nm, VCE = 5 V Ica Collector emitter breakdown voltage Collector emitter dark current Collector emitter capacitance Collector light current Rise time, fall time Cut-off frequency UNIT 1 200 nA 0.25 3 pF 0.5 mA ± 60 deg λp 850 nm λ0.1 450 to 1080 nm Ee = 1 mW/cm2, λ = 950 nm, IC = 0.1 mA VCEsat 0.15 VS = 5 V, IC = 1 mA, λ = 950 nm, RL = 1 kΩ tr/tf 6 µs VS = 5 V, IC = 1 mA, λ = 950 nm, RL = 100 Ω tr/tf 2 µs VS = 5 V, IC = 2 mA, RL = 100 Ω fc 180 kHz Wavelength of peak sensitivity Range of spectral bandwidth Collector emitter saturation voltage MAX. V ϕ Angle of half sensitivity TYP. 0.3 V Note Tamb = 25 °C, unless otherwise specified www.vishay.com 532 For technical questions, contact: [email protected] Document Number: 81501 Rev. 1.3, 04-Sep-08 VEMT4700 Silicon NPN Phototransistor, RoHS Compliant Vishay Semiconductors BASIC CHARACTERISTICS Tamb = 25 °C, unless otherwise specified I ca - Collector Light Current (mA) 10 103 VCE = 20 V 102 101 10 20 40 60 80 Ee = 1 mW/cm² 0.5 mW/cm² 0.2 mW/cm² 2.0 1.8 VCE = 5 V Ee = 1 mW/cm2 λ = 950 nm 1.6 1.4 1.2 1.0 0.8 0.6 0 20 40 60 80 100 Tamb - Ambient Temperature (°C) 94 8239 0.1 10 f = 1 MHz 8 6 4 2 0 0.1 1 100 10 VCE - Collector Emitter Voltage (V) Fig. 6 - Collector Emitter Capacitance vs. Collector Emitter Voltage 10 ton/toff - Turn-on/Turn-off Time (µs) 8 1 0.1 V CE = 5 V λ = 950 nm 0.01 0.001 0.01 94 8316 100 10 Fig. 5 - Collector Light Current vs. Collector Emitter Voltage 94 8294 Fig. 3 - Relative Collector Current vs. Ambient Temperature 1 VCE - Collector Emitter Voltage (V) 94 8317 Fig. 2 - Collector Dark Current vs. Ambient Temperature Ica rel - Relative Collector Current 1 100 Tamb - Ambient Temperature (°C) 94 8304 Ica - Collector Light Current (mA) λ = 950 nm 0.1 CCEO - Collector Emitter Capacitance (pF) ICEO - Collector Dark Current (nA) 104 0.1 1 10 E e - Irradiance (mW/cm²) Fig. 4 - Collector Light Current vs. Irradiance Document Number: 81501 Rev. 1.3, 04-Sep-08 VCE = 5 V RL = 100 Ω λ = 950 nm 6 4 toff 2 ton 0 94 8293 0 2 4 6 8 10 12 14 IC - Collector Current (mA) Fig. 7 - Turn-on/Turn-off Time vs. Collector Current For technical questions, contact: [email protected] www.vishay.com 533 VEMT4700 Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant 10° 20° 30° 0.8 0.6 0.4 0.2 40° 1.0 0.9 50° 0.8 60° 70° 0.7 ϕ - Angular Displacement 1.0 Srel - Relative Sensitivity S (λ)rel - Relative Spectral Sensitivity 0° 80° 0 400 600 800 0.6 1000 0.4 0.2 0 94 8318 λ - Wavelength (nm) 94 8348 Fig. 8 - Relative Spectral Sensitivity vs. Wavelength Fig. 9 - Relative Radiant Sensitivity vs. Angular Displacement PACKAGE DIMENSIONS in millimeters Mounting Pad Layout area covered with solder resist 4 0.5 2.6 (2.8) 1.2 4 1.6 (1.9) Dimensions: IR and vaporphase (wave soldering) 21439 www.vishay.com 534 For technical questions, contact: [email protected] Document Number: 81501 Rev. 1.3, 04-Sep-08 VEMT4700 Silicon NPN Phototransistor, RoHS Compliant Vishay Semiconductors SOLDER PROFILE max. 260 °C 245 °C 255 °C 240 °C 217 °C 250 Temperature (°C) 2.2 2.0 3.5 3.1 300 5.75 5.25 4.0 3.6 200 max. 30 s 3.6 3.4 150 max. 100 s max. 120 s 1.85 1.65 100 1.6 1.4 4.1 3.9 max. ramp up 3 °C/s max. ramp down 6 °C/s 50 8.3 7.7 4.1 3.9 0.25 2.05 1.95 94 8668 0 0 50 19841 100 150 200 250 300 Time (s) Fig. 12 - Tape Dimensions in mm for PLCC-3 Fig. 10 - Lead (Pb)-free Reflow Solder Profile acc. J-STD-020D DRYPACK Devices are packed in moisture barrier bags (MBB) to prevent the products from moisture absorption during transportation and storage. Each bag contains a desiccant. FLOOR LIFE MISSING DEVICES A maximum of 0.5 % of the total number of components per reel may be missing, exclusively missing components at the beginning and at the end of the reel. A maximum of three consecutive components may be missing, provided this gap is followed by six consecutive components. De-reeling direction Floor life (time between soldering and removing from MBB) must not exceed the time indicated on MBB label: Floor life: 4 weeks Conditions: Tamb < 30 °C, RH < 60 % Moisture sensitivity level 2a, acc. to J-STD-020. > 160 mm DRYING In case of moisture absorption devices should be baked before soldering. Conditions see J-STD-020 or label. Devices taped on reel dry using recommended conditions 192 h at 40 °C (+ 5 °C), RH < 5 %. TAPE AND REEL PLCC-3 components are packed in antistatic blister tape (DIN IEC (CO) 564) for automatic component insertion. Cavities of blister tape are covered with adhesive tape. 94 8158 Tape leader 40 empty compartments min. 75 empty compartments Carrier leader Carrier trailer Fig. 13 - Beginning and End of Reel The tape leader is at least 160 mm and is followed by a carrier tape leader with at least 40 empty compartments. The tape leader may include the carrier tape as long as the cover tape is not connected to the carrier tape. The least component is followed by a carrier tape trailer with a least 75 empty compartments and sealed with cover tape. Adhesive tape Blister tape Component cavity 94 8670 Fig. 11 - Blister Tape Document Number: 81501 Rev. 1.3, 04-Sep-08 For technical questions, contact: [email protected] www.vishay.com 535 VEMT4700 Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant 120° 4.5 3.5 2.5 1.5 COVER TAPE REMOVAL FORCE 10.0 9.0 The removal force lies between 0.1 N and 1.0 N at a removal speed of 5 mm/s. In order to prevent components from popping out of the blisters, the cover tape must be pulled off at an angle of 180° with regard to the feed direction. 13.00 12.75 63.5 60.5 Identification Label: Vishay type group tape code production code quantity 14.4 max. 180 178 94 8665 Fig. 14 - Dimensions of Reel-GS08 10.4 8.4 120° 4.5 3.5 2.5 1.5 13.00 12.75 62.5 60.0 Identification Label: Vishay type group tape code production code quantity 321 329 14.4 max. 18857 Fig. 15 - Dimensions of Reel-GS18 www.vishay.com 536 For technical questions, contact: [email protected] Document Number: 81501 Rev. 1.3, 04-Sep-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1