VISHAY TEMT3700-GS18

TEMT3700
Vishay Semiconductors
Silicon NPN Phototransistor, RoHS Compliant
FEATURES
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94 8553
DESCRIPTION
TEMT3700 is a high speed silicon NPN epitaxial planar
phototransistor in a miniature PLCC-2 package for surface
mounting on printed boards. The device is sensitive to visible
and near infrared radiation.
Package type: surface mount
Package form: PLCC-2
Dimensions (L x W x H in mm): 3.5 x 2.8 x 1.75
High photo sensitivity
High radiant sensitivity
Suitable for visible and near infrared radiation
Fast response times
Angle of half sensitivity: ϕ = ± 60°
Package notch indicates collector
Package matched with IR emitter series VSML3710
Floor life: 1 year, MSL 2, acc. J-STD-020
Lead (Pb)-free component in accordance with
RoHS 2002/95/EC and WEEE 2002/96/EC
APPLICATIONS
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Photo interrupters
Miniature switches
Counters
Encoders
Position sensors
Ligth sensors
PRODUCT SUMMARY
COMPONENT
Ica (mA)
ϕ (deg)
λ0.1 (nm)
0.5
± 60
450 to 1080
TEMT3700
Note
Test conditions see table “Basic Characteristics”
ORDERING INFORMATION
ORDERING CODE
PACKAGING
REMARKS
PACKAGE FORM
TEMT3700-GS08
TEMT3700-GS18
Tape and reel
Tape and reel
MOQ: 7500 pcs, 1500 pcs/reel
MOQ: 8000 pcs, 8000 pcs/reel
PLCC-2
PLCC-2
Note
MOQ: minimum order quantity
ABSOLUTE MAXIMUM RATINGS
PARAMETER
TEST CONDITION
Collector emitter voltage
Emitter collector voltage
Collector current
Collector peak current
Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/ambient
tp/T ≤ 0.1, tp ≤ 10 µs
Acc. reflow solder profile fig. 10
Soldered on PCB with pad dimensions: 4 mm x 4 mm
SYMBOL
VALUE
UNIT
VCEO
VECO
IC
ICM
PV
Tj
Tamb
Tstg
Tsd
RthJA
70
5
50
100
100
100
- 40 to + 100
- 40 to + 100
260
400
V
V
mA
mA
mW
°C
°C
°C
°C
K/W
Note
Tamb = 25 °C, unless otherwise specified
Document Number: 81555
Rev. 1.7, 10-Oct-08
For technical questions, contact: [email protected]
www.vishay.com
1
TEMT3700
Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant
PV - Power Dissipation Limit (mW)
125
R thJA = 400 K/W
100
75
50
25
0
10 20 30 40 50 60 70 80 90 100
0
Tamb - Ambient Temperature (°C)
20376
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
BASIC CHARACTERISTICS
PARAMETER
TEST CONDITION
SYMBOL
MIN.
IC = 1 mA
V(BR)CEO
70
TYP.
MAX.
UNIT
VCE = 20 V, E = 0
ICEO
1
200
nA
Collector emitter capacitance
VCE = 5 V, f = 1 MHz, E = 0
CCEO
3
pF
Ee = 1 mW/cm2, λ = 950 nm,
VCE = 5 V
Collector ligth current
Ica
0.5
mA
Collector emitter breakdown voltage
Collector emitter dark current
V
0.25
Angle of half sensitivity
ϕ
± 60
deg
Wavelength of peak sensitivity
λp
850
nm
λ0.1
450 to 1080
nm
λ0.5
620 to 980
nm
Ee = 1 mW/cm2, λ = 950 nm,
IC = 0.1 mA
VCEsat
0.15
VS = 5 V, IC = 1 mA, λ = 950 nm,
RL = 1 kΩ
tr/tf
6
µs
VS = 5 V, IC = 1 mA, λ = 950 nm,
RL = 100 Ω
tr/tf
2
µs
VS = 5 V, IC = 2 mA, RL = 100 Ω
fc
180
kHz
Range of spectral bandwidth
Collector emitter saturation voltage
Rise time, fall time
Cut-off frequency
0.3
V
Note
Tamb = 25 °C, unless otherwise specified
BASIC CHARACTERISTICS
Tamb = 25 °C, unless otherwise specified
2.0
Ica rel - Relative Collector Current
ICEO - Collector Dark Current (nA)
104
103
VCE = 20 V
102
101
10
20
94 8304
40
60
80
100
1.8
1.4
1.2
1.0
0.8
0.6
Tamb - Ambient Temperature (°C)
94 8239
Fig. 2 - Collector Dark Current vs. Ambient Temperature
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2
VCE = 5 V
Ee = 1 mW/cm2
λ = 950 nm
1.6
0
20
40
60
80
100
Tamb - Ambient Temperature (°C)
Fig. 3 - Relative Collector Current vs. Ambient Temperature
For technical questions, contact: [email protected]
Document Number: 81555
Rev. 1.7, 10-Oct-08
TEMT3700
Silicon NPN Phototransistor, RoHS Compliant Vishay Semiconductors
8
ton/toff - Turn-on/Turn-off Time (µs)
Ica - Collector Light Current (mA)
10
1
0.1
V CE = 5 V
λ = 950 nm
0.01
0.001
0.01
0.1
1
E e - Irradiance (mW/cm²)
94 8316
4
toff
2
ton
0
10
VCE = 5 V
RL = 100 Ω
λ = 950 nm
6
0
2
Fig. 4 - Collector Light Current vs. Irradiance
4
6
8
10
12
14
IC - Collector Current (mA)
94 8293
Fig. 7 - Turn-on/Turn-off Time vs. Collector Current
S (λ)rel - Relative Spectral Sensitivity
λ = 950 nm
1
Ee = 1 mW/cm²
0.5 mW/cm²
0.2 mW/cm²
0.1
0.1
94 8317
1
10
0.8
0.6
0.4
0.2
0
100
VCE - Collector Emitter Voltage (V)
400
600
800
1000
λ - Wavelength (nm)
94 8348
Fig. 5 - Collector Light Current vs. Collector Emitter Voltage
Fig. 8 - Relative Spectral Sensitivity vs. Wavelength
0°
10
10°
20°
30°
f = 1 MHz
8
Srel - Relative Sensitivity
CCEO - Collector Emitter Capacitance (pF)
1.0
6
4
2
40°
1.0
0.9
50°
0.8
60°
70°
0.7
ϕ - Angular Displacement
I ca - Collector Light Current (mA)
10
80°
0
0.1
94 8294
1
10
VCE - Collector Emitter Voltage (V)
Fig. 6 - Collector Emitter Capacitance vs. Collector Emitter Voltage
Document Number: 81555
Rev. 1.7, 10-Oct-08
0.6
100
0.4
0.2
0
94 8318
Fig. 9 - Relative Radiant Sensitivity vs. Angular Displacement
For technical questions, contact: [email protected]
www.vishay.com
3
TEMT3700
Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant
PACKAGE DIMENSIONS in millimeters
Mounting Pad Layout
1.2
4
2.6 (2.8)
area covered with
solder resist
4
1.6 (1.9)
20350
SOLDER PROFILE
DRYPACK
948625
300
max. 240 °C
10 s
ca. 230 °C
Temperature (°C)
250
Devices are packed in moisture barrier bags (MBB) to
prevent the products from moisture absorption during
transportation and storage. Each bag contains a desiccant.
FLOOR LIFE
200
215 °C
Floor life (time between soldering and removing from MBB)
must not exceed the time indicated on MBB label:
Floor life: 1 year
Conditions: Tamb < 30 °C, RH < 60 %
Moisture sensitivity level 2, acc. to J-STD-020.
150
max 40 s
max. 160 °C
100
90 s to 120 s
Lead Temperature
50
Full Line: Typical
Dotted: Process Limits
2 K/s to 4 K/s
DRYING
0
0
50
100
150
200
Time (s)
Fig. 10 - Lead Tin (SnPb) Reflow Solder Profile
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4
250
In case of moisture absorption devices should be baked
before soldering. Conditions see J-STD-020 or label.
Devices taped on reel dry using recommended conditions
192 h at 40 °C (+ 5 °C), RH < 5 %.
For technical questions, contact: [email protected]
Document Number: 81555
Rev. 1.7, 10-Oct-08
TEMT3700
Silicon NPN Phototransistor, RoHS Compliant Vishay Semiconductors
TAPE AND REEL
PLCC-2 components are packed in antistatic blister tape
(DIN IEC (CO) 564) for automatic component insertion.
Cavities of blister tape are covered with adhesive tape.
4.5
3.5
2.5
1.5
Adhesive tape
Identification
Label:
Vishay
type
group
tape code
production
code
quantity
Blister tape
Component cavity
10.0
9.0
120°
94 8670
13.00
12.75
63.5
60.5
14.4 max.
180
178
94 8665
Fig. 14 - Dimensions of Reel-GS08
Fig. 11 - Blister Tape
2.2
2.0
3.5
3.1
4.5
3.5
5.75
5.25
3.6
3.4
4.0
3.6
4.1
3.9
4.1
3.9
2.5
1.5
8.3
7.7
Identification
Label:
Vishay
type
group
tape code
production
code
quantity
1.85
1.65
1.6
1.4
10.4
8.4
120°
0.25
2.05
1.95
94 8668
Fig. 12 - Tape Dimensions in mm for PLCC-2
MISSING DEVICES
13.00
12.75
62.5
60.0
321
329
14.4 max.
18857
Fig. 15 - Dimensions of Reel-GS18
A maximum of 0.5 % of the total number of components per
reel may be missing, exclusively missing components at the
beginning and at the end of the reel. A maximum of three
consecutive components may be missing, provided this gap
is followed by six consecutive components.
De-reeling direction
COVER TAPE REMOVAL FORCE
The removal force lies between 0.1 N and 1.0 N at a removal
speed of 5 mm/s. In order to prevent components from
popping out of the blisters, the cover tape must be pulled off
at an angle of 180° with regard to the feed direction.
94 8158
> 160 mm
Tape leader
40 empty
compartments
min. 75 empty
compartments
Carrier leader
Carrier trailer
Fig. 13 - Beginning and End of Reel
The tape leader is at least 160 mm and is followed by a
carrier tape leader with at least 40 empty compartments. The
tape leader may include the carrier tape as long as the cover
tape is not connected to the carrier tape. The least
component is followed by a carrier tape trailer with a least
75 empty compartments and sealed with cover tape.
Document Number: 81555
Rev. 1.7, 10-Oct-08
For technical questions, contact: [email protected]
www.vishay.com
5
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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