BPV10NF Datasheet

BPV10NF
www.vishay.com
Vishay Semiconductors
Silicon PIN Photodiode
FEATURES
• Package type: leaded
• Package form: T-1¾
• Dimensions (in mm): Ø 5
• Radiant sensitive area (in mm2): 0.78
• Leads with stand-off
• High radiant sensitivity
• Daylight blocking filter matched with 870 nm to 950 nm
emitters
16140-1
• High bandwidth: > 100 MHz at VR = 12 V
• Fast response times
• Angle of half sensitivity:  = ± 20°
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
BPV10NF is a PIN photodiode with high speed and high
radiant sensitivity in black, T-1¾ plastic package with
daylight blocking filter. Filter bandwidth is matched with
870 nm to 950 nm IR emitters.
APPLICATIONS
• High speed detector for infrared radiation
• Infrared remote control and free air data transmission
systems, e.g. in combination with TSFFxxxx series IR
emitters
PRODUCT SUMMARY
COMPONENT
Ira (μA)
 (deg)
0.5 (nm)
60
± 20
790 to 1050
PACKAGE FORM
BPV10NF
Note
• Test condition see table “Basic Characteristics”
ORDERING INFORMATION
PACKAGING
REMARKS
BPV10NF
ORDERING CODE
Bulk
MOQ: 4000 pcs, 4000 pcs/bulk
T-1¾
BPV10NF-CS21
Reel
MOQ: 5000 pcs, 1000 pcs/reel
T-1¾
Note
• MOQ: minimum order quantity
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
VR
60
V
PV
215
mW
Tj
100
°C
Operating temperature range
Tamb
-40 to +100
°C
Storage temperature range
Tstg
-40 to +100
°C
t  5 s, 2 mm from body
Tsd
260
°C
Connected with Cu wire, 0.14 mm2
RthJA
350
K/W
Reverse voltage
Power dissipation
Tamb  25 °C
Junction temperature
Soldering temperature
Thermal resistance junction / ambient
Rev. 1.9, 29-May-15
UNIT
Document Number: 81503
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BPV10NF
www.vishay.com
Vishay Semiconductors
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
IF = 50 mA
VF
IR = 100 μA, E = 0
V(BR)
VR = 20 V, E = 0
Iro
VR = 0 V, f = 1 MHz, E = 0
CD
11
pF
Ee = 1 mW/cm2,  = 870 nm
VO
450
mV
μA
Forward voltage
Breakdown voltage
Reverse dark current
Diode capacitance
Open circuit voltage
MIN.
TYP.
MAX.
UNIT
1.0
1.3
V
1
5
nA
60
V
Ee = 1 mW/cm2,  = 870 nm
IK
50
Reverse light current
Ee = 1 mW/cm2,  = 870 nm, VR = 5 V
Ira
55
μA
Ee = 1 mW/cm2,  = 950 nm, VR = 5 V
Ira
60
μA
Temperature coefficient of Ira
Ee = 1 mW/cm2,  = 870 nm, VR = 5 V
TKIra
-0.1
%/K
Absolute spectral sensitivity
VR = 5 V,  = 870 nm
Short circuit current
30
s()
0.55
A/W
Angle of half sensitivity

± 20
deg
Wavelength of peak sensitivity
p
940
nm
Range of spectral bandwidth
0.5
790 to 1050
nm
 = 950 nm

70
%
VR = 20 V,  = 950 nm
NEP
3 x 10-14
W/Hz
Detectivity
VR = 20 V,  = 950 nm
D*
3 x 1012
cmHz/W
Rise time
VR = 50 V, RL = 50 ,  = 820 nm
tr
2.5
ns
Fall time
VR = 50 V, RL = 50 ,  = 820 nm
tf
2.5
ns
Quantum efficiency
Noise equivalent power
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
1.4
Ira rel - Relative Reverse Light Current
Iro - Reverse Dark Current (nA)
1000
100
10
VR = 20 V
1
1.2
1.0
VR = 5 V
Ee =1 mW/cm2
λ = 870 nm
0.8
0.6
20
94 8436
40
60
80
100
Tamb - Ambient Temperature (°C)
Fig. 1 - Reverse Dark Current vs. Ambient Temperature
Rev. 1.9, 29-May-15
0
94 8621
20
40
60
80
100
Tamb - Ambient Temperature (°C)
Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature
Document Number: 81503
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BPV10NF
www.vishay.com
Vishay Semiconductors
1.2
S(λ)rel - Relative Spectral Sensivity
Ira - Reverse Light Current (µA)
1000
100
10
VR = 5 V
λ = 870 nm
1
0.1
0.01
0.1
0.8
0.6
0.4
0.2
0.0
750
10
1
850
Fig. 3 - Reverse Light Current vs. Irradiance
950
1150
Fig. 6 - Relative Spectral Sensitivity vs. Wavelength
0°
100
10°
20°
30°
0.5 mW/cm2
10
0.2 mW/cm2
λ = 870 nm
0.1 mW/cm2
0.05 mW/cm2
40°
1.0
0.9
50°
0.8
60°
70°
0.7
1
0.1
94 8623
80°
0.02 mW/cm2
1
ϕ - Angular Displacement
1 mW/cm2
Srel - Relative Sensitivity
Ira - Reverse Light Current (µA)
1050
λ - Wavelength (nm)
94 8426
Ee - Irradiance (mW/cm²)
94 8622
1.0
100
10
0.6
0.4
0.2
0
94 8624
VR - Reverse Voltage (V)
Fig. 4 - Reverse Light Current vs. Reverse Voltage
Fig. 7 - Relative Radiant Sensitivity vs. Angular Displacement
CD - Diode Capacitance (pF)
12
10
E=0
f = 1 MHz
8
6
4
2
0
0.1
94 8439
1
10
100
VR - Reverse Voltage (V)
Fig. 5 - Diode Capacitance vs. Reverse Voltage
Rev. 1.9, 29-May-15
Document Number: 81503
3
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BPV10NF
www.vishay.com
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters
Drawing-No.: 6.544-5185.01-4
96 12198
Rev. 1.9, 29-May-15
Document Number: 81503
4
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
1
Document Number: 91000