TSSS2600 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs FEATURES • • • • • • • • • • • • • 94 8672 DESCRIPTION TSSS2600 is an infrared, 950 nm emitting diode in GaAs technology, molded in a miniature, clear plastic package with side view lens. Package type: leaded Package form: side view Dimensions (L x W x H in mm): 3.6 x 2.2 x 5 Peak wavelength: λp = 950 nm High reliability High radiant power High radiant intensity Angle of half intensity: ϕ = ± 25°, horizontal Low forward voltage Suitable for high pulse current operation Good spectral matching with Si photodetectors Package matched with detector TEST2600 Lead (Pb)-free component in accordance RoHS 2002/95/EC and WEEE 2002/96/EC with APPLICATIONS • Infrared source in miniature light barriers or reflective sensor systems with short transmission distances and low forward voltage requirements. Matching with silicon PIN photodiodes or phototransistors (e.g. TEST2600) PRODUCT SUMMARY COMPONENT Ie (mW/sr) ϕ (deg) λp (nm) tr (ns) 2.6 ± 25 950 800 TSSS2600 Note Test conditions see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM Bulk MOQ: 5000 pcs, 5000 pcs/bulk Side view TSSS2600 Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL VALUE Reverse voltage TEST CONDITION VR 5 UNIT V Forward current IF 100 mA Peak forward current tp/T = 0.5, tp = 100 µs IFM 200 mA Surge forward current tp = 100 µs IFSM 2.0 A Power dissipation PV 170 mW Junction temperature Tj 100 °C Tamb - 40 to + 100 °C °C Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ambient Tstg - 40 to + 100 t ≤ 5 s, 2 mm from case Tsd 260 °C Leads not soldered RthJA 450 K/W Note Tamb = 25 °C, unless otherwise specified www.vishay.com 244 For technical questions, contact: [email protected] Document Number: 81042 Rev. 1.6, 05-Sep-08 TSSS2600 Infrared Emitting Diode, RoHS Compliant, Vishay Semiconductors 950 nm, GaAs 125 IF - Forward Current (mA) PV - Power Dissipation (mW) 250 200 150 RthJA 100 50 100 0 75 RthJA 50 25 0 0 94 8029 20 40 60 80 100 0 Tamb - Ambient Temperature (°C) 94 7916 Fig. 1 - Power Dissipation Limit vs. Ambient Temperature 20 40 60 80 100 Tamb - Ambient Temperature (°C) Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS PARAMETER Forward voltage Temperature coefficient of VF Reverse current Junction capacitance Radiant intensity TEST CONDITION SYMBOL IF = 100 mA, tp = 20 ms IF = 1.5 A, tp = 100 µs MIN. TYP. MAX. VF 1.25 1.6 VF 2.2 IF = 100 mA TKVF - 1.3 VR = 5 V IR VR = 0 V, f = 1 MHz, E = 0 Cj IF = 100 mA, tp = 20 ms Ie 2.6 V V mV/K 100 µA 3 mW/sr 30 1 UNIT pF IF = 1.5 A, tp = 100 µs Ie 25 mW/sr IF = 100 mA, tp = 20 ms φe 20 mW IF = 100 mA TKφe - 0.8 %/K horizontal ϕ1 ± 25 deg vertical ϕ2 ± 60 deg Peak wavelength IF = 100 mA λp 950 nm Spectral bandwidth IF = 100 mA Δλ 50 nm Temperature coefficient of λp IF = 100 mA TKλp 0.2 nm/K IF = 100 mA tr 800 ns IF = 1.5 A tr 400 ns IF = 100 mA tf 800 ns IF = 1.5 A tf 400 ns d 2 mm Radiant power Temperature coefficient of φe Angle of half intensity Rise time Fall time Virtual source diameter Note Tamb = 25 °C, unless otherwise specified Document Number: 81042 Rev. 1.6, 05-Sep-08 For technical questions, contact: [email protected] www.vishay.com 245 TSSS2600 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs BASIC CHARACTERISTICS Tamb = 25 °C, unless otherwise specified 10 4 1.6 1.2 Ie rel; Φe rel 10 2 10 1 0.8 0.4 10 0 10 -1 0 1 2 3 0 - 10 0 10 4 V F - Forward Voltage (V) 94 7996 50 Fig. 6 - Relative Radiant Intensity/Power vs. Ambient Temperature 100 Φe rel - Relative Radiant Power 1.25 10 1 1.0 0.75 0.5 0.25 IF = 100 mA 0.1 10 0 94 7967 10 1 10 2 10 3 I F - Forward Current (mA) 0 900 10 4 1000 950 λ - Wavelength (nm) 94 7994 Fig. 4 - Radiant Intensity vs. Forward Current Fig. 7 - Relative Radiant Power vs. Wavelength I e rel - Relative Radiant Intensity 0° 100 Φ e - Radiant Power (mW) 140 100 T amb - Ambient Temperature (°C) 94 7993 Fig. 3 - Pulse Forward Current vs. Forward Voltage I e - Radiant Intensity (mW/sr) IF = 20 mA 10 1 10° 20° 30° 40° 1.0 0.9 50° 0.8 60° 70° 0.7 ϕ - Angular Displacement I F - Forward Current (mA) 10 3 80° 0.1 1 13718 10 100 1000 I F - Forward Current (mA) Fig. 5 - Radiant Power vs. Forward Current www.vishay.com 246 0.6 0.4 94 7969 0.2 0 horizontal Fig. 8 - Relative Radiant Intensity vs. Angular Displacement For technical questions, contact: [email protected] Document Number: 81042 Rev. 1.6, 05-Sep-08 TSSS2600 Infrared Emitting Diode, RoHS Compliant, Vishay Semiconductors 950 nm, GaAs 0° 10° 20° ϕ - Angular Displacement I e rel - Relative Radiant Intensity 30° 40° 1.0 0.9 50° 0.8 60° 70° 0.7 80° 0.6 0.4 0.2 0 vertical 94 7970 Fig. 9 - Relative Radiant Intensity vs. Angular Displacement 0.5 - 0.1 < 0.7 3.4 6.9 ± 0.3 ± 0.3 0.3 - 0.1 0.3 + 0.1 1.2 nom. PACKAGE DIMENSIONS in millimeters Area not plane ± 0.5 Emitter center 28.9 3.6 ± 0.15 0.65 C + 0.1 - 0.15 1.8 ± 0.15 2.2 ± 0.15 A 0.5 + 0.2 - 0.1 0.4 ± 0.15 0.4 + 0.15 0.3 0.6 x 45° 2.54 nom. 5 R 0.7 technical drawings according to DIN specifications 60° Drawing-No.: 6.544-5241.01-4 Issue: 3; 18.04.96 95 11488 Document Number: 81042 Rev. 1.6, 05-Sep-08 For technical questions, contact: [email protected] www.vishay.com 247 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1