VEMT2003X01, VEMT2023X01 www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: surface mount • Package form: GW, RGW • Dimensions (L x W x H in mm): 2.3 x 2.3 x 2.55 • AEC-Q101 qualified • High radiant sensitivity • Daylight blocking filter matched with 830 nm to 950 nm IR emitters • Fast response times VEMT2003X01 VEMT2023X01 • Angle of half sensitivity: = ± 35° • Package matched with IR emitter series VSMB2943RGX01 and VSMB2943GX01 • Floor life: 4 weeks, MSL 2a, acc. J-STD-020 • Lead (Pb)-free reflow soldering DESCRIPTION VEMT2003X01 series are silicon NPN epitaxial planar phototransistors with daylight blocking filter in a miniature, black dome lens package for surface mounting. Filter bandwidth is matched with 830 nm to 950 nm IR emitters. • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Detector in automotive applications • Photo interrupters • Miniature switches • Counters • Encoders • Position sensors PRODUCT SUMMARY COMPONENT Ica (mA) (deg) 0.5 (nm) VEMT2003X01 2.7 ± 35 790 to 970 VEMT2023X01 2.7 ± 35 790 to 970 PACKAGING REMARKS PACKAGE FORM Note • Test condition see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE VEMT2003X01 Tape and reel MOQ: 6000 pcs, 6000 pcs/reel Reverse gullwing VEMT2023X01 Tape and reel MOQ: 6000 pcs, 6000 pcs/reel Gullwing Note • MOQ: minimum order quantity Rev. 1.0, 08-Apr-13 Document Number: 84162 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VEMT2003X01, VEMT2023X01 www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) SYMBOL VALUE UNIT Collector emitter voltage PARAMETER TEST CONDITION VCEO 20 V Emitter collector voltage VECO 7 V IC 50 mA PV 100 mW Tj 100 °C Tamb - 40 to + 100 °C °C Collector current Tamb 75 °C Power power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Tstg - 40 to + 100 Acc. reflow profile fig. 8 Tsd 260 °C Acc. J-STD-051 RthJA 250 K/W Thermal resistance junction/ambient PV - Power Dissipation (mW) 120 100 80 60 RthJA = 250 K/W 40 20 0 0 21619 10 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature (°C) Fig. 1 - Power Dissipation Limit vs. Ambient Temperature BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER Collector emitter breakdown voltage Collector dark current Collector emitter capacitance Collector light current TEST CONDITION SYMBOL MIN. IC = 0.1 mA VCEO 20 TYP. UNIT V VCE = 5 V, E = 0 ICEO 1 VCE = 0 V, f = 1 MHz, E = 0 CCEO 25 Ee = 1 mW/cm2, = 950 nm, VCE = 5 V Ica 1.3 MAX. 2.7 100 nA pF 4.1 mA Angle of half sensitivity ± 35 Wavelength of peak sensitivity p 860 nm Range of spectral bandwidth 0.5 790 to 970 nm Collector emitter saturation voltage Temperature coefficient of Ica Rev. 1.0, 08-Apr-13 IC = 0.05 mA VCEsat Ee = 1 mW/cm2, = 950 nm, VCE = 5 V TkIca deg 0.4 1.1 V %/K Document Number: 84162 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VEMT2003X01, VEMT2023X01 www.vishay.com Vishay Semiconductors BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 1 S(λ)rel - Relative Spectral Sensitivity IF = 0 1000 VCE = 70 V VCE = 25 V VCE = 5 V 100 10 1 0 10 20 20594 30 40 50 60 70 80 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 600 650 700 750 800 850 900 950 1000 1050 1100 90 100 Tamb - Ambient Temperature (°C) λ - Wavelength (nm) 21574 Fig. 2 - Collector Dark Current vs. Ambient Temperature Fig. 5 - Relative Spectral Sensitivity vs. Wavelength 0° Srel - Relative Radiant Sensitivity Ica - Collector Light Current (mA) 100 10 VCE = 5 V, λ = 950 nm 1 0.1 0.01 0.1 1 30° 1.0 0.9 50° 0.8 60° 70° 80° 10 0.7 0.6 0.4 0.2 0 Fig. 6 - Relative Radiant Sensitivity vs. Angular Displacement 100 80 RL = 100 Ω 70 60 50 40 tf 30 tr 20 10 0 0 20599 250 500 750 1000 1250 1500 1750 2000 IC - Collector Current (µA) Fig. 4 - Rise/Fall Time vs. Collector Current Rev. 1.0, 08-Apr-13 Ica rel - Relative Collector Current 2.0 90 tr/tf - Rise/Fall Time (µs) 20° 40° Ee - Irradiance (mW/cm²) Fig. 3 - Collector Light Current vs. Irradiance 10° ϕ - Angular Displacement ICE0 - Collector Dark Current (nA) 10 000 1.8 VCE = 5 V Ee = 1 mW/cm2 λ = 950 nm 1.6 1.4 1.2 1.0 0.8 0.6 0 94 8239 20 40 60 80 100 Tamb - Ambient Temperature (°C) Fig. 7 - Relative Collector Current vs. Ambient Temperature Document Number: 84162 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VEMT2003X01, VEMT2023X01 www.vishay.com Vishay Semiconductors REFLOW SOLDER PROFILE DRYPACK 300 255 °C 240 °C 217 °C 250 Temperature (°C) max. 260 °C 245 °C FLOOR LIFE 200 max. 30 s 150 max. 100 s max. 120 s 100 max. ramp up 3 °C/s max. ramp down 6 °C/s 50 Devices are packed in moisture barrier bags (MBB) to prevent the products from moisture absorption during transportation and storage. Each bag contains a desiccant. Floor life (time between soldering and removing from MBB) must not exceed the time indicated on MBB label: Floor life: 4 weeks Conditions: Tamb < 30 °C, RH < 60 % Moisture sensitivity level 2a, acc. to J-STD-020. DRYING 0 0 19841 50 100 150 200 250 300 Time (s) Fig. 8 - Lead (Pb)-free Reflow Solder Profile acc. J-STD-020 In case of moisture absorption devices should be baked before soldering. Conditions see J-STD-020 or label. Devices taped on reel dry using recommended conditions 192 h at 40 °C (+ 5 °C), RH < 5 %. PACKAGE DIMENSIONS VEMT2003X01 in millimeters Rev. 1.0, 08-Apr-13 Document Number: 84162 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VEMT2003X01, VEMT2023X01 www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS VEMT2023X01 in millimeters Rev. 1.0, 08-Apr-13 Document Number: 84162 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VEMT2003X01, VEMT2023X01 www.vishay.com Vishay Semiconductors TAPE AND REEL DIMENSIONS VEMT2003X01 in millimeters Rev. 1.0, 08-Apr-13 Document Number: 84162 6 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VEMT2003X01, VEMT2023X01 www.vishay.com Vishay Semiconductors TAPE AND REEL DIMENSIONS VEMT2023X01 in millimeters Rev. 1.0, 08-Apr-13 Document Number: 84162 7 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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