VEMT2000X01, VEMT2020X01 www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: surface mount • Package form: GW, RGW • Dimensions (L x W x H in mm): 2.3 x 2.3 x 2.8 • AEC-Q101 qualified • High radiant sensitivity • Daylight blocking filter matched with 830 nm to 950 nm IR emitters • Fast response times 21568 VEMT2020X01 • Angle of half sensitivity: = ± 15° VEMT2000X01 • Package matched with IR emitter series VSMB2000X01 • Floor life: 4 weeks, MSL 2a, acc. J-STD-020 DESCRIPTION • Lead (Pb)-free reflow soldering VEMT2000X01 series are silicon NPN epitaxial planar phototransistors with daylight blocking filter in a miniature, black dome lens package for surface mounting. Filter bandwidth is matched with 830 nm to 950 nm IR emitters. • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC Note ** Please see document “Vishay Material Category Policy”: www.vishay.com/doc?99902 APPLICATIONS • Detector in automotive applications • Photo interrupters • Miniature switches • Counters • Encoders • Position sensors PRODUCT SUMMARY COMPONENT Ica (mA) (deg) 0.5 (nm) VEMT2000X01 6 ± 15 790 to 970 VEMT2020X01 6 ± 15 790 to 970 PACKAGING REMARKS PACKAGE FORM Note • Test condition see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE VEMT2000X01 Tape and reel MOQ: 6000 pcs, 6000 pcs/reel Reverse gullwing VEMT2020X01 Tape and reel MOQ: 6000 pcs, 6000 pcs/reel Gullwing Note • MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER SYMBOL VALUE Collector emitter voltage VCEO 20 V Emitter collector voltage VECO 7 V IC 50 mA Collector current Rev. 1.3, 23-Aug-11 TEST CONDITION UNIT Document Number: 81595 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VEMT2000X01, VEMT2020X01 www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT Tamb 75 °C PV 100 mW Tj 100 °C Operating temperature range Tamb - 40 to + 100 °C Storage temperature range Tstg - 40 to + 100 °C Acc. reflow profile fig. 8 Tsd 260 °C Acc. J-STD-051 RthJA 250 K/W Power power dissipation Junction temperature Soldering temperature Thermal resistance junction/ambient PV - Power Dissipation (mW) 120 100 80 60 RthJA = 250 K/W 40 20 0 0 10 21619 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature (°C) Fig. 1 - Power Dissipation Limit vs. Ambient Temperature BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER Collector emitter breakdown voltage Collector dark current Collector emitter capacitance Collector light current TEST CONDITION SYMBOL MIN. 20 TYP. MAX. UNIT 100 nA IC = 0.1 mA VCEO VCE = 5 V, E = 0 ICEO 1 VCE = 0 V, f = 1 MHz, E = 0 CCEO 25 Ee = 1 mW/cm2, = 950 nm, VCE = 5 V Ica 3 V 6 pF 9 mA Angle of half sensitivity ± 15 deg Wavelength of peak sensitivity p 860 nm 0.5 790 to 970 Range of spectral bandwidth Collector emitter saturation voltage Temperature coefficient of Ica Rev. 1.3, 23-Aug-11 IC = 0.05 mA VCEsat Ee = 1 mW/cm2, = 950 nm, VCE = 5 V TkIca nm 0.4 1.1 V %/K Document Number: 81595 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VEMT2000X01, VEMT2020X01 www.vishay.com Vishay Semiconductors BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 1 S(λ)rel - Relative Spectral Sensitivity IF = 0 1000 VCE = 70 V VCE = 25 V VCE = 5 V 100 10 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 1 0 10 20594 20 30 40 50 60 70 80 0 600 650 700 750 800 850 900 950 1000 1050 1100 90 100 Tamb - Ambient Temperature (°C) λ - Wavelength (nm) 21574 Fig. 5 - Relative Spectral Sensitivity vs. Wavelength Fig. 2 - Collector Dark Current vs. Ambient Temperature 0° 10° 20° 30° Srel - Relative Sensitivity Ica - Collector Light Current (mA) 100 10 1 VCE = 5 V, λ = 950 nm 0.1 0.9 50° 0.8 60° 70° 0.7 80° 0.01 0.01 0.1 1 0.6 10 Ee - Irradiance (mW/cm²) 21573 Fig. 3 - Collector Light Current vs. Irradiance 0.4 0.2 0 94 8248 Fig. 6 - Relative Radiant Sensitivity vs. Angular Displacement 100 80 RL = 100 Ω 70 60 50 40 tf 30 tr 20 10 0 Ica rel - Relative Collector Current 2.0 90 tr/tf - Rise/Fall Time (µs) 40° 1.0 ϕ - Angular Displacement ICE0 - Collector Dark Current (nA) 10 000 1.8 VCE = 5 V Ee = 1 mW/cm2 λ = 950 nm 1.6 1.4 1.2 1.0 0.8 0.6 0 20599 250 IC - Collector Current (µA) Fig. 4 - Rise/Fall Time vs. Collector Current Rev. 1.3, 23-Aug-11 0 500 750 1000 1250 1500 1750 2000 94 8239 20 40 60 80 100 Tamb - Ambient Temperature (°C) Fig. 7 - Relative Collector Current vs. Ambient Temperature Document Number: 81595 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VEMT2000X01, VEMT2020X01 www.vishay.com Vishay Semiconductors REFLOW SOLDER PROFILE DRYPACK Devices are packed in moisture barrier bags (MBB) to prevent the products from moisture absorption during transportation and storage. Each bag contains a desiccant. 300 Temperature (°C) max. 260 °C 245 °C 255 °C 240 °C 217 °C 250 FLOOR LIFE 200 Floor life (time between soldering and removing from MBB) must not exceed the time indicated on MBB label: Floor life: 4 weeks Conditions: Tamb < 30 °C, RH < 60 % Moisture sensitivity level 2a, acc. to J-STD-020. max. 30 s 150 max. 100 s max. 120 s 100 max. ramp up 3 °C/s max. ramp down 6 °C/s 50 DRYING 0 0 50 100 19841 150 200 250 In case of moisture absorption devices should be baked before soldering. Conditions see J-STD-020 or label. Devices taped on reel dry using recommended conditions 192 h at 40 °C (+ 5 °C), RH < 5 %. 300 Time (s) Fig. 8 - Lead (Pb)-free Reflow Solder Profile acc. J-STD-020 PACKAGE DIMENSIONS VEMT2000X01 in millimeters Ø 1.8 ± 0.1 1.6 0.1 9 2.77 ± 0.2 0.05 0.3 ± 0.1 0.4 2.2 5.8 2.2 ± 0.2 Exposed copper ± 0.2 1.1 ± 0.1 Z 20:1 2.3 0.254 ± 0.2 0.4 0.5 2.3 Collector PIN ID 1.7 Emitter 0.75 Solder pad proposal acc. IPC 7351 Technical drawings according to DIN specifications Not indicated to Ø 2.3 lerances ±0.1 ± 0.1 6.7 Drawing-No.: 6.544-5391.01-4 Issue: 1; 26.09.08 21570 Rev. 1.3, 23-Aug-11 Document Number: 81595 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VEMT2000X01, VEMT2020X01 www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS VEMT2020X01 in millimeters Ø 1.8 0 .1 9 2.77 ± 0.2 0.05 1.6 0.3 0.4 2.2 2.2 4.2 ± 0.2 Exposed copper 0.6 0.75 Collector Pin ID Solder pad proposal acc. IPC 7351 0.254 2.3 ± 0.2 0.4 0.5 2.3 ± 0.2 Emitter Technical drawings according to DIN specifications Not indicated tolerances ± 0.1 2.45 5.15 Drawing-No.: 6.544-5383.01-4 Issue: 4; 28.01.09 21569 Rev. 1.3, 23-Aug-11 Document Number: 81595 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VEMT2000X01, VEMT2020X01 www.vishay.com Vishay Semiconductors TAPE AND REEL DIMENSIONS VEMT2000X01 in millimeters Unreel direction X 2. Ø 62 ± 0.5 Reel Ø 13 ± 0.5 Ø 330 ± 1 0.5 5± Tape position coming out from reel 6000 pcs/reel Label posted here Technical drawings according to DIN specifications 12.4 ± 1.5 Leader and trailer tape: Empty (160 mm min.) Parts mounted Direction of pulling out Devicce Lead I Lead II Collector Emitter Cathode Anode Anode Cathode Ø 1.55 ± 0.05 I VEMT2000 VEMT2500 X 2:1 4 ± 0.1 2 ± 0.05 VEMD2000 5.5 ± 0.05 VEMD2500 VSMB2000 VSMG2000 VSMY2850RG 3.05 ± 0.1 II 12 ± 0.3 Terminal position in tape 1.75 ± 0.1 Empty (400 mm min.) 4 ± 0.1 Drawing-No.: 9.800-5100.01-4 Issue: 2; 18.03.10 21572 Rev. 1.3, 23-Aug-11 Document Number: 81595 6 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VEMT2000X01, VEMT2020X01 www.vishay.com Vishay Semiconductors TAPE AND REEL DIMENSIONS VEMT2020X01 in millimeters Reel X Unreel direction 5± Ø 62 ± 0.5 2. Ø 13 ± 0.5 Ø 330 ± 1 0.5 Tape position coming out from reel 6000 pcs/reel Label posted here technical drawings according to DIN specifications 12.4 ± 1.5 Leader and trailer tape: Empty (160 mm min.) Parts mounted Direction of pulling out Ø 1.55 ± 0.05 Devicce Lead I Lead II Collector Emitter Cathode Anode Anode Cathode I VEMT2020 VEMT2520 X 2:1 4 ± 0.1 2 ± 0.05 VSMB2020 VEMD2020 VEMD2520 VSMY2850G 3.05 ± 0.1 II 4 ± 0.1 5.5 ± 0.05 VSMG2020 12 ± 0.3 Terminal position in tape 1.75 ± 0.1 Empty (400 mm min.) Drawing-No.: 9.800-5091.01-4 Issue: 3; 18.03.10 21571 Rev. 1.3, 23-Aug-11 Document Number: 81595 7 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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