TEMD7000ITX01 Datasheet

TEMD7000ITX01
www.vishay.com
Vishay Semiconductors
Silicon PIN Photodiode
FEATURES
• Package type: surface mount
• Package form: 0805
• Dimensions (L x W x H in mm): 2 x 1.25 x 0.85
• Radiant sensitive area (in mm2): 0.23
• Enhanced operating temperature
TOP = -40 °C to +110 °C
range:
• High radiant sensitivity
• Suitable for visible and near infrared radiation
• Fast response times
• Angle of half sensitivity: ϕ = ± 60°
DESCRIPTION
• Floor life: 72 h, MSL 4, according to J-STD-020
TEMD7000ITX01 is a high speed and high sensitive PIN
photodiode. It is a miniature surface mount device (SMD)
including the chip with a 0.23 mm2 sensitive area detecting
visible and near infrared radiation.
• Lead (Pb)-free reflow soldering
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• High speed photo detector
PRODUCT SUMMARY
COMPONENT
TEMD7000ITX01
Ira (μA)
ϕ (deg)
λ0.1 (nm)
3
± 60
350 to 1120
Note
• Test conditions see table “Basic Characteristics”
ORDERING INFORMATION
ORDERING CODE
PACKAGING
REMARKS
PACKAGE FORM
TEMD7000ITX01
Tape and reel
MOQ: 3000 pcs, 3000 pcs/reel
0805
Note
• MOQ: minimum order quantity
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
Reverse voltage
Power dissipation
Tamb ≤ 25 °C
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction / ambient
Rev. 1.0, 24-Apr-15
SYMBOL
VALUE
VR
60
UNIT
V
PV
215
mW
Tj
110
°C
Tamb
-40 to +110
°C
°C
Tstg
-40 to +110
Acc. reflow solder profile fig. 8
Tsd
260
°C
Acc. J-STD-051
RthJA
270
K/W
Document Number: 84316
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TEMD7000ITX01
www.vishay.com
Vishay Semiconductors
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
IF = 50 mA
VF
IR = 100 μA, E = 0
V(BR)
VR = 10 V, E = 0
Iro
VR = 0 V, f = 1 MHz, E = 0
CD
4
pF
VR = 5 V, f = 1 MHz, E = 0
CD
1.3
pF
Forward voltage
Breakdown voltage
Reverse dark current
Diode capacitance
MIN.
TYP.
MAX.
UNIT
1
V
60
V
1
3
nA
Open circuit voltage
Ee = 1 mW/cm2, λ = 950 nm
Vo
350
mV
Temperature coefficient of Vo
Ee = 1 mW/cm2, λ = 950 nm
TKVo
-2.6
mV/K
Short circuit current
Ee = 1 mW/cm2, λ = 950 nm
Ik
3
μA
Temperature coefficient of Ik
Ee = 1 mW/cm2, λ = 950 nm
TKIk
0.1
%/K
Ee = 1 mW/cm2, λ = 950 nm, VR = 5 V
Ira
Reverse light current
2.4
3
ϕ
Angle of half sensitivity
3.6
μA
± 60
deg
Wavelength of peak sensitivity
λp
900
nm
Range of spectral bandwidth
λ0.1
350 to 1120
nm
Rise time
VR = 10 V, RL = 1 kΩ, λ = 820 nm
tr
100
ns
Fall time
VR = 10 V, RL = 1 kΩ, λ = 820 nm
tf
100
ns
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
10
Ira - Reverse Light Current (µA)
Iro - Reverse Dark Current (nA)
1000
100
10
VR = 10 V
1
20
94 8427
40
60
100
80
Tamb - Ambient Temperature (°C)
0.1
VR = 5 V
λ = 950 nm
0.01
0.001
0.01
0.1
1
10
Ee - Irradiance (mW/cm2 )
21535
Fig. 1 - Reverse Dark Current vs. Ambient Temperature
Fig. 3 - Reverse Light Current vs. Irradiance
100
1.4
Ira - Reverse Light Current (µA)
Ira, rel - Relative Reverse Light Current
1
VR = 5 V
λ = 950 nm
1.2
1.0
0.8
0.6
0
94 8416
20
40
60
80
100
Tamb - Ambient Temperature (°C)
Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature
Rev. 1.0, 24-Apr-15
λ = 950 nm
10
1 mW/cm2
1
0.1
17026
1
10
100
VR - Reverse Voltage
Fig. 4 - Reverse Light Current vs. Reverse Voltage
Document Number: 84316
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TEMD7000ITX01
www.vishay.com
Vishay Semiconductors
REFLOW SOLDER PROFILE
CD - Diode Capacitance (pF)
8
300
Temperature (°C)
E=0
f = 1 MHz
4
2
200
max. 30 s
150
max. ramp down 6 °C/s
50
1
0.1
10
max. ramp up 3 °C/s
0
100
0
VR- Reverse Voltage (V)
19841
Fig. 5 - Diode Capacitance vs. Reverse Voltage
50
100
150
200
250
300
Time (s)
Fig. 8 - Lead (Pb)-free Reflow Solder Profile acc. J-STD-020
DRYPACK
1.0
S(λ)rel - Relative Spectral Sensitivity
max. 100 s
max. 120 s
100
0
94 8430
max. 260 °C
245 °C
255 °C
240 °C
217 °C
250
6
Devices are packed in moisture barrier bags (MBB) to
prevent the products from moisture absorption during
transportation and storage. Each bag contains a desiccant.
0.9
0.8
0.7
0.6
FLOOR LIFE
0.5
Floor life (time between soldering and removing from MBB)
must not exceed the time indicated on MBB label:
0.4
0.3
Floor life: 72 h
0.2
Conditions: Tamb < 30 °C, RH < 60 %
0.1
Moisture sensitivity level 4, according to J-STD-020.
0
400
500
600
700
800
900 1000 1100
DRYING
λ - Wavelength (nm)
In case of moisture absorption devices should be baked
before soldering. Conditions see J-STD-020 or label.
Devices taped on reel dry using recommended conditions
192 h at 40 °C (+ 5 °C), RH < 5 %.
Fig. 6 - Relative Spectral Sensitivity vs. Wavelength
0°
10°
20°
40°
1.0
0.9
50°
0.8
60°
70°
0.7
ϕ - Angular Displacement
Ie, rel - Relative Radiant Sensitivity
30°
80°
0.6
0.4
0.2
0
94 8013
Fig. 7 - Relative Radiant Sensitivity vs. Angular Displacement
Rev. 1.0, 24-Apr-15
Document Number: 84316
3
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TEMD7000ITX01
www.vishay.com
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters
20018
Rev. 1.0, 24-Apr-15
Document Number: 84316
4
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TEMD7000ITX01
www.vishay.com
Vishay Semiconductors
BLISTER TAPE DIMENSIONS in millimeters
21501
Rev. 1.0, 24-Apr-15
Document Number: 84316
5
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TEMD7000ITX01
www.vishay.com
Vishay Semiconductors
REEL DIMENSIONS in millimeters
8.4 +2.5
Ø 177.8 max.
Ø 55 min.
8.4 +0.15
Z
Form of the leave open
of the wheel is supplier specific.
14.4 max.
Ø 20.2 min.
1.5 min.
Ø 13 - 0.2
+ 0.5
Z 2:1
Drawing-No.: 9.800-5096.01-4
Issue: 2; 26.04.10
20875
Rev. 1.0, 24-Apr-15
technical drawings
according to DIN
specifications
Document Number: 84316
6
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
1
Document Number: 91000