Single N-channel MOSFET ELM14440AA-N ■General description ■Features ELM14440AA-N uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate resistance. • • • • ■Maximum absolute ratings Parameter Ta=25°C. Unless otherwise noted. Limit Unit Note Symbol Drain-source voltage Gate-source voltage Vds Vgs Ta=25°C Continuous drain current 60 ±20 5 Id Ta=70°C Pulsed drain current Tc=25°C Tc=70°C 2.5 1.6 -55 to 150 Pd Junction and storage temperature range V V 4 20 Idm Power dissipation Vds=60V Id=5A (Vgs=10V) Rds(on) < 55mΩ (Vgs=10V) Rds(on) < 75mΩ (Vgs=4.5V) Tj, Tstg A 1 A 2 W °C ■Thermal characteristics Parameter Symbol Maximum junction-to-ambient t≤10s Maximum junction-to-ambient Maximum junction-to-lead Steady-state Steady-state Rθja Rθjl ■Pin configuration Typ. Max. Unit 38 50 °C/W 69 24 80 30 °C/W °C/W Note 1 3 ■Circuit SOP-8(TOP VIEW) 1 8 2 7 3 6 4 5 Pin No. Pin name 1 2 3 SOURCE SOURCE SOURCE 4 5 6 GATE DRAIN DRAIN 7 8 DRAIN DRAIN 4-1 D G S Single N-channel MOSFET ELM14440AA-N ■Electrical characteristics Parameter STATIC PARAMETERS Drain-source breakdown voltage Symbol Ta=25°C. Unless otherwise noted. Min. Typ. Max. Unit Condition BVdss Id=250μA, Vgs=0V 60 Zero gate voltage drain current Idss Vds=48V Vgs=0V Gate-body leakage current Igss Vds=0V, Vgs=±20V V 1 5 μA 100 nA 2.3 3.0 V A 42 55 Ta=55°C Gate threshold voltage On state drain current Vgs(th) Vds=Vgs, Id=250μA Id(on) Vgs=10V, Vds=5V Static drain-source on-resistance Vgs=10V Rds(on) Id=5A Ta=125°C Vgs=4.5V, Id=4A Vds=5V, Id=5A 1.0 20 75 mΩ 54 11 75 mΩ S 0.78 1.00 4 V A 540 pF pF Forward transconductance Gfs Diode forward voltage Max. body-diode continuous current DYNAMIC PARAMETERS Vsd Is Input capacitance Output capacitance Ciss Coss Vgs=0V, Vds=30V, f=1MHz 450 60 Reverse transfer capacitance Gate resistance SWITCHING PARAMETERS Total gate charge (10V) Crss Rg Vgs=0V, Vds=0V, f=1MHz 25 1.65 2.00 pF Ω Qg 8.5 10.5 nC Total gate charge (4.5V) Qg 4.3 5.5 nC Gate-source charge Gate-drain charge Turn-on delay time Qgs Qgd Turn-on rise time Turn-off delay time Turn-off fall time Body diode reverse recovery time Body diode reverse recovery charge Is=1A, Vgs=0V Vgs=10V, Vds=30V, Id=5A 1.6 2.2 nC nC td(on) 5.1 7.0 ns tr Vgs=10V, Vds=30V td(off) RL=6Ω, Rgen=3Ω 2.6 15.9 4.0 20.0 ns ns 2.0 25.1 28.7 3.0 35.0 ns ns nC tf trr Qrr If=5A, dIf/dt=100A/μs If=5A, dIf/dt=100A/μs NOTE : 1. The value of Rθja is measured with the device mounted on 1in² FR-4 board of 2oz. Copper, in still air environment with Ta=25°C. The value in any given applications depends on the user’s specific board design, The current rating is based on the t ≤ 10s themal resistance rating. 2. Repetitive rating, pulse width limited by junction temperature. 3. The Rθja is the sum of the thermal impedance from junction to lead Rθjl and lead to ambient. 4. The static characteristics in Figures 1 to 6 are obtained using 80μs pulses, duty cycle 0.5%max. 5. These tests are performed with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with Ta=25°C. The SOA curve provides a single pulse rating. 4-2 Single N-channel MOSFET AO4440 ELM14440AA-N ■Typical electrical and thermal characteristics TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL 20 15 10.0V 5.0V VDS=5V 10 4.5V 10 125°C ID(A) ID (A) 15 4.0V 5 5 25°C VGS=3.5V 0 0 1 2 3 4 0 5 2 VDS (Volts) Fig 1: On-Region Characteristics 3.5 4 4.5 5 2 80 Normalized On-Resistance 90 RDS(ON) (mΩ ) 3 VGS(Volts) Figure 2: Transfer Characteristics 100 VGS=4.5V 70 60 50 VGS=10V 40 30 20 0 5 10 15 1.8 VGS=10V ID=5A 1.6 VGS=4.5V ID=4A 1.4 1.2 1 0.8 20 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 160 1.0E+01 ID=5A 140 1.0E+00 125°C 1.0E-01 100 IS (A) 120 RDS(ON) (mΩ ) 2.5 125°C 1.0E-02 25°C 1.0E-03 80 1.0E-04 25°C 60 1.0E-05 40 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 4-3 Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 VSD (Volts) Figure 6: Body-Diode Characteristics 1.0 Single N-channel MOSFET AO4440 ELM14440AA-N TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL 10 Capacitance (pF) 8 VGS (Volts) 800 VDS=30V ID= 5A 6 4 2 600 Ciss 400 Coss 200 Crss 0 0 0 2 4 6 8 10 0 10 Qg (nC) Figure 7: Gate-Charge Characteristics 40 RDS(ON) limited 10µs 10.0 100µs 10ms 1ms 1s 1.0 10s TJ(Max)=150°C TA=25°C 0.1s 10 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note 5) 100 Figure 9: Maximum Forward Biased Safe Operating Area (Note 5) Zθ JA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=40°C/W 60 20 0 0.001 VDS (Volts) 10 50 10 DC 1 40 TJ(Max)=150°C TA=25°C 30 0.1 0.1 30 VDS (Volts) Figure 8: Capacitance Characteristics Power (W) ID (Amps) 100.0 20 0.01 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance 4-4 Alpha & Omega Semiconductor, Ltd. 100 1000