Single P-channel MOSFET ELM14423AA-N ■General description ■Features ELM14423AA-N uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate resistance. Internal ESD protection is included. • • • • • Vds=-30V Id=-15A (Vgs=-20V) Rds(on) < 7mΩ (Vgs=-20V) Rds(on) < 8.5mΩ (Vgs=-10V) ESD Rating : 6000V HBM ■Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Ta=25°C. Unless otherwise noted. Limit Unit Note -30 V ±25 V Symbol Vds Vgs Ta=25°C Ta=70°C Continuous drain current Pulsed drain current -15.0 -12.1 -80 Id Idm Tc=25°C Power dissipation Tc=70°C Junction and storage temperature range Pd Tj, Tstg 3.1 2.0 -55 to 150 A 1 A 2 W 1 °C ■Thermal characteristics Parameter Maximum junction-to-ambient Maximum junction-to-ambient Symbol t≤10s Steady-state Rθja Maximum junction-to-lead Steady-state Rθjl ■Pin configuration Typ. 26 50 Max. 40 75 Unit °C/W °C/W Note 14 24 °C/W 3 1 ■Circuit SOP-8(TOP VIEW) 1 8 2 7 3 6 4 5 Pin No. 1 2 Pin name SOURCE SOURCE 3 4 5 SOURCE GATE DRAIN 6 7 8 DRAIN DRAIN DRAIN 4-1 D G S Single P-channel MOSFET ELM14423AA-N ■Electrical characteristics Parameter Symbol Ta=25°C. Unless otherwise noted. Min. Typ. Max. Unit Condition STATIC PARAMETERS Drain-source breakdown voltage BVdss Id=-250μA, Vgs=0V Zero gate voltage drain current Idss Gate-body leakage current Igss Vds=-24V Vgs=0V -30 -100 Ta=55°C -500 ±1 Vds=0V, Vgs=±20V Gate threshold voltage Vds=0V, Vgs=±25V Vgs(th) Vds=Vgs, Id=-250μA -2.0 On state drain current Id(on) Vgs=-10V, Vds=-5V -80 Static drain-source on-resistance Rds(on) Forward transconductance Gfs Diode forward voltage Max. body-diode continuous current DYNAMIC PARAMETERS Vsd Is Input capacitance Output capacitance Reverse transfer capacitance Ciss Coss Crss Gate resistance SWITCHING PARAMETERS Total gate charge Gate-source charge Gate-drain charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Body diode reverse recovery time Body diode reverse recovery charge Rg Qg Qgs Qgd ±10 -2.7 -3.5 nA μA μA V A 5.7 7.1 7.0 8.6 6.8 9.4 43 8.5 12.0 mΩ mΩ S Is=-1A, Vgs=0V -0.71 -1.00 -4.2 V A Vgs=0V, Vds=-15V, f=1MHz 4632 1034 705 pF pF pF 2.5 Ω 82.0 nC 16.8 23.0 nC nC 18.5 20.0 55.0 ns ns ns 30.0 43 38 ns ns nC Vgs=-20V Id=-15A Ta=125°C Vgs=-10V, Id=-15A Vgs=-6V, Id=-10A Vds=-5V, Id=-15A Vgs=0V, Vds=0V, f=1MHz Vgs=-10V, Vds=-15V Id=-15A td(on) tr Vgs=-10V, Vds=-15V td(off) RL=1Ω, Rgen=3Ω tf trr Qrr V If=-15A, dIf/dt=100A/μs If=-15A, dIf/dt=100A/μs NOTE : mΩ 1. The value of Rθja is measured with the device mounted on 1in² FR-4 board of 2oz. Copper, in still air environment with Ta=25°C. The value in any given applications depends on the user’s specific board design, The current rating is based on the t ≤ 10s themal resistance rating. 2. Repetitive rating, pulse width limited by junction temperature. 3. The Rθja is the sum of the thermal impedance from junction to lead Rθjl and lead to ambient. 4. The static characteristics in Figures 1 to 6 are obtained using 80μs pulses, duty cycle 0.5%max. 5. These tests are performed with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with Ta=25°C. The SOA curve provides a single pulse rating. 4-2 Single P-channel MOSFET ELM14423AA-N ■Typical electrical and thermal characteristics 30 50 -10V -6V -5V 30 20 -4.5V -Id(A) -Id (A) 40 Vds=-5V 25 20 125°C 15 10 Vgs=-4V 10 25°C 5 0 0 0 1 2 3 4 2 5 2.5 12 Normalized On-Resistance Rds(on) (m� ) 3.5 4 4.5 5 1.6 Vgs=-6V 10 8 Vgs=-10V 6 Vgs=-20V 4 Vgs=-10V Id = -15A 1.4 Vgs=-20V Id = -15A 1.2 Vgs=-6V Id = -10A 1 0.8 0 5 10 15 20 25 30 0 -Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 16 25 50 -Is (A) 10 175 125°C 1.0E-02 1.0E-03 1.0E-04 25°C 6 1.0E-05 4 1.0E-06 8 150 1.0E+00 125°C 4 125 -15 1.0E+01 1.0E-01 8 100 -12.8 Id=-15A 12 75 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 14 Rds(on) (m� ) 3 -Vgs(Volts) Figure 2: Transfer Characteristics -Vds (Volts) Fig 1: On-Region Characteristics 12 16 25°C 0.0 20 0.2 0.4 0.6 0.8 -Vsd (Volts) Figure 6: Body-Diode Characteristics -Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 4-3 1.0 Single P-channel MOSFET ELM14423AA-N 10 6000 Capacitance (pF) 8 -Vgs (Volts) 7000 Vds=-15V Id=-15A 6 4 2 4000 3000 Coss 2000 1000 0 0 10 20 30 40 50 60 70 80 -Qg (nC) Figure 7: Gate-Charge Characteristics Crss 0 90 0 100.0 5 10 15 20 25 -Vds (Volts) Figure 8: Capacitance Characteristics 40 Rds(on) limited 100�s 1ms 10.0 30 10ms 0.1s 1.0 1s Tj(max)=150°C Ta=25°C 10s DC 1 10 -Vds (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note 5) 10 Z�ja Normalized Transient Thermal Resistance 20 10 0 0.001 0.1 0.1 30 Tj(max)=150°C Ta=25°C 10�s Power (W) -Id (Amps) Ciss 5000 D=Ton/T Tj,pk=Ta+Pdm.Z�ja.R�ja R�ja=40°C/W 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note 5) 100 -12.8 0.01 -15 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 Pd 0.1 0.01 0.00001 Ton Single Pulse 0.0001 T 1 10 0.001 0.01 Pulse 0.1 Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance 4-4 100 1000