Complementary MOSFET ELM16601EA-S ■General Description ■Features ELM16601EA-S uses advanced trench technology to provide excellent Rds(on) and low gate charge. N-channel • • • • • P-channel Vds=30V Vds=-30V Id=3.4A(Vgs=10V) Id=-2.3A(Vgs=-10V) Rds(on) < 60mΩ(Vgs=10V) Rds(on) < 135mΩ(Vgs=-10V) Rds(on) < 75mΩ(Vgs=4.5V) Rds(on) < 185mΩ(Vgs=-4.5V) Rds(on) < 115mΩ(Vgs=2.5V) Rds(on) < 265mΩ(Vgs=-2.5V) ■Maximum Absolute Ratings Parameter Symbol N-ch (Max.) P-ch (Max.) Vds 30 -30 V Vgs ±12 3.4 ±12 -2.3 V 2.7 30 1.15 -1.8 -30 1.15 0.73 -55 to 150 0.73 -55 to 150 Drain-source voltage Gate-source voltage Ta=25°C Continuous drain current Id Ta=70°C Pulsed drain current Idm Ta=25°C Power dissipation Pd Ta=70°C Junction and storage temperature range Tj,Tstg Unit Note A 1 A 2 W °C ■Thermal Characteristics Parameter Maximum junction-to-ambient Maximum junction-to-ambient Symbol t≤10s Steady-state Maximum junction-to-lead Maximum junction-to-ambient Maximum junction-to-ambient Steady-state t≤10s Steady-state Maximum junction-to-lead Steady-state Rθja Rθja Rθjl Pin No. Pin name 5 1 2 GATE1 SOURCE2 3 4 GATE2 DRAIN2 5 6 SOURCE1 DRAIN1 1 2 3 Unit °C/W °C/W 80 110 150 °C/W °C/W °C/W 3 P-ch 64 78 106 64 80 °C/W 3 1 1 ■Circuit SOT-26(TOP VIEW) 4 Max. 110 150 Note N-ch Typ. 78 106 Rθjl ■Pin configuration 6 Device • N-ch 7-1 • P-ch D1 G1 D2 G2 S1 S2 Complementary MOSFET ELM16601EA-S ■Electrical Characteristics (N-ch) Parameter Symbol Conditions Min. Typ. Ta=25°C Max. Unit STATIC PARAMETERS Drain-source breakdown voltage BVdss Id=250μA, Vgs=0V Zero gate voltage drain current Idss Vds=24V, Vgs=0V Gate-body leakage current Gate threshold voltage On state drain current Igss Vds=0V, Vgs=±12V Rds(on) Vgs=4.5V, Id=3A 88 7.8 115 0.8 1.0 V 1.5 A Vsd Is=1A, Vgs=0V Tj=125°C Is Ciss Coss Reverse transfer capacitance Gate resistance SWITCHING PARAMETERS Crss Rg Total gate charge Gate-source charge Qg Qgs Gate-drain charge Turn-on delay time Turn-on rise time Turn-off delay time Qgd 75 V A mΩ S Vgs=0V, Vds=15V, f=1MHz 390.0 54.5 pF pF Vgs=0V, Vds=0V, f=1MHz 41.0 3 pF Ω Vgs=4.5V, Vds=15V, Id=3A 4.34 1.38 nC nC 0.60 nC 4 2 22 ns ns ns 3 11.0 5.5 ns ns nC td(on) tr Vgs=10V, Vds=15V td(off) Rl=5Ω, Rgen=6Ω tf trr Qrr nA 60 Diode forward voltage 0.6 10 μA 50 75 60 Gfs Turn-off fall time Body-diode reverse recovery time Body-diode reverse recovery charge 5 100 1.4 Forward transconductance DYNAMIC PARAMETERS Input capacitance Output capacitance Tj=55°C 1.0 Vgs=2.5V, Id=2A Vds=5V, Id=3A Max.body-diode continuous current V 1 Vgs(th) Vds=Vgs, Id=250μA Id(on) Vgs=4.5V, Vds=5V Vgs=10V, Id=3A Static drain-source on-resistance 30 If=3A, dl/dt=100A/μs If=3A, dl/dt=100A/μs NOTE : 1. The value of Rθja is measured with the device mounted on 1in² FR-4 board of 2oz. Copper, in still air environment with Ta=25°C. The value in any given applications depends on the user’s specific board design, The current rating is based on the t ≤ 10s themal resistance rating. 2. Repetitive rating, pulse width limited by junction temperature. 3. The Rθja is the sum of the thermal impedance from junction to lead Rθjl and lead to ambient. 4. The static characteristics in Figures 1 to 6 are obtained using 80μs pulses, duty cycle 0.5%max. 5. These tests are performed with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with Ta=25°C. The SOA curve provides a single pulse rating. 7- 2 Complementary MOSFET ELM16601EA-S AO6601 n-channel typical characteristics ■Typical Electrical and Thermal Characteristics (N-ch) TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15 10 10V 3V Vds=5V 8 4.5V 25°C 9 Id (A) Id (A) 12 2.5V 6 3 125°C 6 4 2 Vgs=2V 0 0 0 1 2 3 4 5 0 0.5 150 1.5 2 2.5 3 3.5 Normalized On-Resistance 1.8 125 Rds(on) (m� ) 1 Vgs (Volts) Figure 2: Transfer Characteristics Vds (Volts) Fig 1: On-Region Characteristics Vgs=2.5V 100 Vgs=4.5V 75 50 Vgs=10V 25 1.6 Vgs=4.5V Vgs=10V 1.4 1.2 Vgs=2.5V 1 0 0 2 4 6 8 0.8 10 0 Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 200 1.0E+00 Id=2A 1.0E-01 100 Is (A) Rds(on) (m� ) 150 125°C 125°C 1.0E-02 1.0E-03 50 25°C 25°C 1.0E-04 1.0E-05 0 0 2 4 6 8 0.0 10 0.2 0.4 0.6 0.8 1.0 Vsd (Volts) Figure 6: Body-Diode Characteristics Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha and Omega Semiconductor, Ltd. 7- 3 1.2 Complementary MOSFET AO6601 n-channel typical characteristics ELM16601EA-S TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 500 Capacitance (pF) 4 Vgs (Volts) 600 Vds=15V Id=3.4A 3 2 1 Ciss 400 300 200 0 0 1 2 3 4 5 0 6 0 Qg (nC) Figure 7: Gate-Charge Characteristics Rds(on) limited 100�s 1ms 10s DC 1 Vds (Volts) 10 100 30 10 D=Ton/T Tj,pk=Ta+Pdm.Z�ja.R�ja R�ja=110°C/W 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) Z �ja Normalized Transient Thermal Resistance 25 Tj(max.)=150°C Ta=25°C 0 0.001 0.1 10 20 5 1s 0.1 15 15 10�s 0.1s 10ms 1.0 10 20 Tj(max.)=150°C Ta=25°C 10.0 5 Vds (Volts) Figure 8: Capacitance Characteristics Power (W) Id (Amps) 100.0 Crss Coss 100 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 Pd 0.1 0.01 0.00001 Ton T Single Pulse 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 7- 4 100 1000 Complementary MOSFET ELM16601EA-S ■Electrical Characteristics (P-ch) Parameter Symbol Conditions Min. Typ. Ta=25°C Max. Unit STATIC PARAMETERS Drain-source breakdown voltage BVdss Id=-250μA, Vgs=0V Zero gate voltage drain current Idss Vds=-24V, Vgs=0V Gate-body leakage current Igss Vds=0V, Vgs=±12V Gate threshold voltage On state drain current Rds(on) Vgs=-4.5V, Id=-2A 135 185 mΩ 195 8 265 mΩ S -0.85 -1.00 V -1.35 A Vsd Is=-1A, Vgs=0V Reverse transfer capacitance Gate resistance SWITCHING PARAMETERS Crss Rg Total gate charge Gate-source charge Qg Qgs Gate-drain charge Qgd Turn-off fall time Body diode reverse recovery time Body diode reverse recovery charge Tj=125°C Is Ciss Coss V A mΩ Vgs=0V, Vds=-15V, f=1MHz 409 55 pF pF Vgs=0V, Vds=0V, f=1MHz 42 12 pF Ω 4.80 1.34 nC nC 0.72 nC 13 10 28 ns ns ns 13 26.0 15.6 ns ns nC Vgs=-4.5V, Vds=-15V Id=-2.5A td(on) tr Vgs=-10V, Vds=-15V td(off) Rl=6Ω, Rgen=6Ω tf trr Qrr nA 135 Diode forward voltage -0.6 -10 μA 107 Gfs Turn-on delay time Turn-on rise time Turn-off delay time -5 ±100 -1.4 Forward transconductance DYNAMIC PARAMETERS Input capacitance Output capacitance Tj=55°C -1.0 Vgs=-2.5V, Id=-1A Vds=-5V, Id=-2.3A Max. body-diode continuous current V -1 Vgs(th) Vds=Vgs, Id=-250μA Id(on) Vgs=-4.5V, Vds=-5V Vgs=-10V, Id=-2.3A Static drain-source on-resistance -30 If=-2.5A, dl/dt=100A/μs If=-2.5A, dl/dt=100A/μs NOTE : 1. The value of Rθja is measured with the device mounted on 1in² FR-4 board of 2oz. Copper, in still air environment with Ta=25°C. The value in any given applications depends on the user’s specific board design, The current rating is based on the t ≤ 10s themal resistance rating. 2. Repetitive rating, pulse width limited by junction temperature. 3. The Rθja is the sum of the thermal impedance from junction to lead Rθjl and lead to ambient. 4. The static characteristics in Figures 1 to 6 are obtained using 80μs pulses, duty cycle 0.5%max. 5. These tests are performed with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with Ta=25°C. The SOA curve provides a single pulse rating. 7- 5 Complementary MOSFET ELM16601EA-S AO6601, AO6601L ■Typical Electrical and Thermal Characteristics (P-ch) P-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 20 -5V -10V 8 25°C -4V Vgs=-3.5V -Id (A) -Id (A) 15 Vds=-5V -4.5V 10 -3V 6 125°C 4 -2.5V 5 2 -2V 0 0 0 1 2 3 4 5 0 0.5 250 1.5 2 2.5 3 3.5 4 1.6 225 Normalized On-Resistance Vgs=-2.5V 200 Rds(on) (m� ) 1 -Vgs (Volts) Figure 2: Transfer Characteristics -Vds (Volts) Fig 1: On-Region Characteristics 175 150 Vgs=-4.5V 125 100 Vgs=-10V 75 Vgs=-4.5V, Vgs=-10V 1.4 Vgs=-2.5V 1.2 Id=-2A 1 50 0 1 2 3 4 5 0.8 6 0 350 1.0E+01 300 1.0E+00 Id=-2A 250 200 1.0E-01 125°C 150 100 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature -Is (A) Rds(on) (m� ) -Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 125°C 1.0E-02 1.0E-03 25°C 1.0E-04 25°C 1.0E-05 50 1.0E-06 0 0 2 4 6 8 10 0.2 0.4 0.6 0.8 1.0 -Vsd (Volts) Figure 6: Body-Diode Characteristics -Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha and Omega Semiconductor, Ltd. 0.0 7- 6 1.2 Complementary MOSFET AO6601 p-channel typical characteristics ELM16601EA-S TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 500 Capacitance (pF) 4 -Vgs (Volts) 600 Vds=-15V Id=-2.0A 3 2 1 400 Ciss 300 200 0 0 1 2 3 4 5 0 6 0 -Qg (nC) Figure 7: Gate-Charge Characteristics 1ms 0.1s 10ms 1.0 10s 1 DC Z �ja Normalized Transient Thermal Resistance 25 30 Tj(max.)=150°C Ta=25°C 10 0 0.001 -Vds (Volts) 10 100 D=Ton/T Tj,pk=Ta+Pdm.Z�ja.R�ja R�ja=110°C/W 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 20 5 0.1 0.1 15 15 Power (W) -Id (Amps) 10�s 100�s 1s 10 20 Tj(max.)=150°C Ta=25°C Rds(on) limited 5 -Vds (Volts) Figure 8: Capacitance Characteristics 100.0 10.0 Crss Coss 100 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 Pd 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 7- 7 100 1000