Single P-channel MOSFET ELM14425AA-N ■General description ■Features ELM14425AA-N uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate resistance. Internal ESD protection is included. • • • • • Vds=-38V Id=-14A (Vgs=-20V) Rds(on) < 10mΩ (Vgs=-20V) Rds(on) < 11mΩ (Vgs=-10V) ESD Rating : 4000V HBM ■Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Ta=25°C. Unless otherwise noted. Limit Unit Note -38 V ±25 V Symbol Vds Vgs Ta=25°C Ta=70°C Continuous drain current Pulsed drain current -14 -11 -50 Id Idm Tc=25°C Power dissipation Tc=70°C Junction and storage temperature range Pd Tj, Tstg 3.1 2.0 -55 to 150 A 1 A 2 W 1 °C ■Thermal characteristics Parameter Maximum junction-to-ambient Maximum junction-to-ambient Symbol t≤10s Steady-state Rθja Maximum junction-to-lead Steady-state Rθjl ■Pin configuration Typ. 26 50 Max. 40 75 Unit °C/W °C/W Note 14 24 °C/W 3 1 ■Circuit SOP-8(TOP VIEW) 1 8 2 7 3 6 4 5 Pin No. 1 2 Pin name SOURCE SOURCE 3 4 5 SOURCE GATE DRAIN 6 7 8 DRAIN DRAIN DRAIN 4-1 D G S Single P-channel MOSFET ELM14425AA-N ■Electrical characteristics Parameter Symbol Ta=25°C. Unless otherwise noted. Min. Typ. Max. Unit Condition STATIC PARAMETERS Drain-source breakdown voltage BVdss Id=-250μA, Vgs=0V Zero gate voltage drain current Idss Vds=-30V Vgs=0V Gate-body leakage current Igss Vds=0V, Vgs=±20V Vds=0V, Vgs=±25V -38 -100 Ta=55°C -500 Gate threshold voltage Vgs(th) Vds=Vgs, Id=-250μA -2.0 On state drain current Id(on) Vgs=-10V, Vds=-5V -50 Static drain-source on-resistance Vgs=-20V Rds(on) Id=-14A Ta=125°C Vgs=-10V, Id=-14A Forward transconductance Gfs Vds=-5V, Id=-14A Diode forward voltage Max. body-diode continuous current DYNAMIC PARAMETERS Vsd Is Is=-1A, Vgs=0V Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Gate resistance SWITCHING PARAMETERS Total gate charge Crss Rg Gate-source charge Gate-drain charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Body diode reverse recovery time Body diode reverse recovery charge V -2.5 nA ±1 ±10 μA μA -3.5 V A 7.7 10.0 11.0 8.8 13.5 11.0 43 -0.71 mΩ mΩ S -1.00 -4.2 V A 3800 pF Vgs=0V, Vds=-20V, f=1MHz 560 pF Vgs=0V, Vds=0V, f=1MHz 350 7.5 pF Ω 63.0 14.1 16.1 nC nC nC td(on) tr Vgs=-10V, Vds=-20V 12.4 9.2 ns ns td(off) RL=1.35Ω, Rgen=3Ω tf trr If=-14A, dIf/dt=100A/μs 97.5 45.5 35 ns ns ns 33 nC Qg Qgs Qgd Qrr Vgs=-10V, Vds=-20V Id=-14A If=-14A, dIf/dt=100A/μs NOTE : 1. The value of Rθja is measured with the device mounted on 1in² FR-4 board of 2oz. Copper, in still air environment with Ta=25°C. The value in any given applications depends on the user’s specific board design, The current rating is based on the t ≤ 10s themal resistance rating. 2. Repetitive rating, pulse width limited by junction temperature. 3. The Rθja is the sum of the thermal impedance from junction to lead Rθjl and lead to ambient. 4. The static characteristics in Figures 1 to 6 are obtained using 80μs pulses, duty cycle 0.5%max. 5. These tests are performed with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with Ta=25°C. The SOA curve provides a single pulse rating. 4-2 Single P-channel MOSFET ELM14425AA-N ■Typical electrical and thermal characteristics 30 30 -20V -10V -5V 25 20 -4.5V -Id (A) -Id (A) 20 -4V 15 -3.5V 10 5 2 3 4 2 2.5 3 3.5 4 4.5 5 -Vgs(Volts) Figure 2: Transfer Characteristics 10 1.6 Normalized On-Resistance Rds(on) (m� ) 25°C 0 5 -Vds (Volts) Fig 1: On-Region Characteristics Vgs=-10V 9 8 Vgs=-20V 7 6 0 5 10 15 20 25 Vgs=-10V Id = -14A 1.4 Vgs=-20V Id = -14A 1.2 1 0.8 30 0 -Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature -15 1.0E+01 20 -12.8 Id=-14A 1.0E+00 1.0E-01 15 -Is (A) Rds(on) (m� ) 125°C 5 0 1 15 10 Vgs=-3V 0 Vds=-5V 25 125°C 10 125°C 1.0E-02 1.0E-03 1.0E-04 25°C 25°C 1.0E-05 1.0E-06 5 4 8 12 16 0.0 20 0.2 0.4 0.6 0.8 -Vsd (Volts) Figure 6: Body-Diode Characteristics -Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 4-3 1.0 Single P-channel MOSFET ELM14425AA-N 5000 10 Vds=-15V Id=-14A Capacitance (pF) 6 4 2000 1000 0 0 10 20 30 40 50 60 -Qg (nC) Figure 7: Gate-Charge Characteristics 100.0 70 10 20 30 -Vds (Volts) Figure 8: Capacitance Characteristics 40 1ms 0.1s 1s Tj(max)=150°C Ta=25°C 20 10 Tj(max)=150°C Ta=25°C 10s DC 0 0.001 0.1 0.1 40 30 10ms 1 -Vds (Volts) 10 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note 5) 100 Figure 9: Maximum Forward Biased Safe Operating Area (Note 5) 10 Z�ja Normalized Transient Thermal Resistance Crss 100�s 10.0 1.0 Coss 0 10�s Rds(on) limited -Id (Amps) 3000 2 0 Ciss 4000 Power (W) -Vgs (Volts) 8 D=Ton/T Tj,pk=Ta+Pdm.Z�ja.R�ja R�ja=40°C/W -12.8 0.01 -15 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 Pd 0.1 Ton Single Pulse 0.01 0.00001 0.0001 T 1 10 0.01 Pulse 0.1 Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance 0.001 4-4 100 1000