WHXPCB AO4440

万和兴电子有限公司 www.whxpcb.com
AO4440
60V N-Channel MOSFET
General Description
Product Summary
The AO4440 uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. This
device is suitable for use as a load switch or in PWM
applications.
VDS (V) = 60V
ID = 5A (VGS = 10V)
RDS(ON) < 55mΩ (VGS = 10V)
RDS(ON) < 75mΩ (VGS = 4.5V)
100% UIS Tested
100% Rg Tested
SOIC-8
Top View
D
D
D
Bottom View
D
D
G
G
S
S
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
Continuous Drain
A
Current
TA=25°C
TA=70°C
TA=25°C
Junction and Storage Temperature Range
Maximum Junction-to-Lead C
±20
V
ID
4
IDM
20
-55 to 150
Symbol
Alpha & Omega Semiconductor, Ltd.
W
1.6
TJ, TSTG
t ≤ 10s
Steady-State
Steady-State
A
2.5
PD
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Units
V
5
Pulsed Drain Current B
Power Dissipation
Maximum
60
RθJA
RθJL
Typ
38
69
24
°C
Max
50
80
30
Units
°C/W
°C/W
°C/W
AO4440
万和兴电子有限公司 www.whxpcb.com
N Channel Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
IDSS
Min
ID=250µA, VGS=0V
Zero Gate Voltage Drain Current
5
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±20V
Gate Threshold Voltage
VDS=VGS ID=250µA
1
ID(ON)
On state drain current
VGS=10V, VDS=5V
20
VGS=10V, ID=5A
TJ=125°C
VGS=4.5V, ID=4A
100
nA
3
V
42
55
A
75
54
gFS
Forward Transconductance
VDS=5V, ID=5A
11
Diode Forward Voltage
IS=1A,VGS=0V
0.78
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
450
VGS=0V, VDS=30V, f=1MHz
µA
2.3
VSD
Coss
Units
V
1
TJ=55°C
Static Drain-Source On-Resistance
Max
60
VDS=48V, VGS=0V
VGS(th)
RDS(ON)
Typ
75
mΩ
mΩ
S
1
V
4
A
540
pF
60
pF
25
pF
1.65
2
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
8.5
10.5
nC
Qg(4.5V) Total Gate Charge
4.3
5.5
nC
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
Qrr
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=30V, ID=5A
1.6
nC
2.2
nC
5.1
7
2.6
4
ns
15.9
20
ns
2
3
ns
25.1
35
ns
nC
VGS=10V, VDS=30V, RL=6Ω,
RGEN=3Ω
IF=5A, dI/dt=100A/µs
Body Diode Reverse Recovery Charge IF=5A, dI/dt=100A/µs
28.7
Body Diode Reverse Recovery Time
ns
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
curve provides a single pulse rating. Rev2: Nov. 2010
2
FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Alpha & Omega Semiconductor, Ltd.
AO4440
万和兴电子有限公司 www.whxpcb.com
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL
20
15
10.0V
5.0V
VDS=5V
15
125°C
ID(A)
ID (A)
10
4.5V
10
4.0V
5
5
25°C
VGS=3.5V
0
0
1
2
3
4
0
5
2
2.5
VDS (Volts)
Fig 1: On-Region Characteristics
4
4.5
5
2
Normalized On-Resistance
90
80
RDS(ON) (mΩ )
3.5
VGS(Volts)
Figure 2: Transfer Characteristics
100
VGS=4.5V
70
60
50
VGS=10V
40
30
20
1.8
VGS=10V
ID=5A
1.6
VGS=4.5V
ID=4A
1.4
1.2
1
0.8
0
5
10
15
20
0
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
160
1.0E+01
ID=5A
140
1.0E+00
125°C
1.0E-01
100
IS (A)
120
RDS(ON) (mΩ )
3
125°C
1.0E-02
25°C
1.0E-03
80
1.0E-04
25°C
60
1.0E-05
40
0.0
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.2
0.4
0.6
0.8
VSD (Volts)
Figure 6: Body-Diode Characteristics
1.0
AO4440
万和兴电子有限公司 www.whxpcb.com
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL
800
10
VDS=30V
ID= 5A
Capacitance (pF)
VGS (Volts)
8
6
4
2
600
Ciss
400
Coss
200
Crss
0
0
0
2
4
6
8
10
0
10
Qg (nC)
Figure 7: Gate-Charge Characteristics
50
60
TJ(Max)=150°C
TA=25°C
10µs
10.0
1ms
1s
1.0
10s
TJ(Max)=150°C
TA=25°C
30
Power (W)
ID (Amps)
100µs
10ms
0.1s
20
10
DC
0
0.001
0.1
1
10
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
100
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
Zθ JA Normalized Transient
Thermal Resistance
40
40
RDS(ON)
limited
10
30
VDS (Volts)
Figure 8: Capacitance Characteristics
100.0
0.1
20
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=40°C/W
0.01
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
PD
0.1
Ton
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
T
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
100
1000